NVTFS5811NLTAG

## NVTFS5811NL Power MOSFET **40 V, 6.7 m 40 A, Single N−Channel** Q 

## **Features** 

- Small Footprint (3.3 x 3.3 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

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- NVTFS5811NLWF − Wettable Flanks Product 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

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es Parameter Symbol Value Unit<br>Drain−to−Source Voltage VDSS 40 V<br>es<br>Gate−to−Source Voltage VGS ± 20 V<br>es<br>Continuous Drain Cur- Tmb = 25 ° C ID 40 A<br>rent R2, 3, 4) J−mb [ (Notes 1,] Steady Tmb = 100 ° C 28<br>Power Dissipation State | Tmb = 25 ° C PD | 21 W<br>R J−mb [ (Notes 1, 2, 3)] Tmb = 100 ° C 10<br>Tee—S<br>Continuous Drain Cur- | TA = 25 ° C ID | 16 A<br>ee rent R3, 4) JA (Notes 1 & Steady TA = 100 ° C 11<br>Power Dissipation State TA = 25 ° C PD 3.2 W<br>R JA (Notes 1, 3) TA = 100 ° C 1.6<br>a | |<br>Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 354 A<br>es Operating Junction and Storage Temperature eeOe TJ, Tstg −55 to ° C<br>+175<br>oo<br>Source Current (Body Diode) IS 17 A<br>es<br>Single Pulse Drain−to−Source Avalanche  EAS 65 mJ<br>Energy (TJ = 25 ° C, VDD = 50 V, VGS = 10 V,<br>IL(pk) = 36 A, L = 1.0 mH, RG = 25 )<br>Lead Temperature for Soldering Purposes sw dT TL dT 260 ° C<br>(1/8 ″  from case for 10 s)<br>eeee ee<br>Stresses exceeding Maximum Ratings may damage the device. Maximum<br>Ratings are stress ratings only. Functional operation above the Recommended<br>Operating Conditions is not implied. Extended exposure to stresses above the<br>Recommended Operating Conditions may affect device reliability.<br>**----- End of picture text -----**<br>


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V(BR)DSS RDS(on) MAX ID MAX<br>6.7 m  @ 10 V<br>40 V 40 A<br>10 m  @ 4.5 V<br>oe<br>N−Channel MOSFET<br>D (5−8)<br>G (4)<br>= } S (1,2,3)<br>MARKING DIAGRAM<br>1<br>1 S D<br>S XXXX D<br>WDFN8<br>S AYWW D<br>( 8FL) G D<br>CASE 511AB<br>" — _—e<br>XXXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>TY,<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** (Note 1) 

|**Parameter**<br>~~es~~<br>~~po~~|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|
|Junction−to−Mounting Board (top) − Steady<br>State (Note 2 and 3)<br>~~po~~|R<br>J−mb|7.2|°C/W|
|Junction−to−Ambient − Steady State (Note 3)<br>~~po~~|R JA|47||



2. Psi ( wy ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 

3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVTFS5811NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **May, 2013 − Rev. 2** 

## **NVTFS5811NL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�20 V||||�100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5||2.2|V|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 20 A|||5.8|6.7|m�|
|||VGS= 4.5 V, ID= 20 A|||8.8|10||
|Forward Transconductance|gFS|VDS= 5 V, ID= 10 A|||24.6||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= 25 V|||1570||pF|
|Output Capacitance|Coss||||215|||
|Reverse Transfer Capacitance|Crss||||157|||
|Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 32 V, ID = 20 A,<br>RG= 2.5�|||17||nC|
|Threshold Gate Charge|QG(TH)||||1||nC|
|Gate−to−Source Charge|QGS||||5|||
|Gate−to−Drain Charge|QGD||||9|||
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 32 V, ID = 20 A|||30||nC|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS= 32 V,<br>ID= 20 A, RG= 2.5�|||11||ns|
|Rise Time|tr||||55|||
|Turn−Off Delay Time|td(off)||||20|||
|Fall Time|tf||||40|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 20 A|TJ= 25°C||0.83|1.2|V|
||||TJ= 125°C||0.70|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt<br>IS= 20|= 100 A/�s,<br>A||22||ns|
|Charge Time|ta||||12|||
|Discharge Time|tb||||10|||
|Reverse Recovery Charge|QRR||||17||nC|



5. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NVTFS5811NL** 

## **TYPICAL CHARACTERISTICS** 

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100 80<br>90 10 V 4.6 V TJ = 25 ° C VDS ≥  10 V<br>70<br>4.2 V<br>80<br>V GS  = 5 V 60<br>70 4.0 V<br>60 50<br>3.8 V<br>50 40<br>3.6 V<br>40 30 TJ = 25 ° C<br>30 3.4 V<br>20 3.2 V 20 TJ = 125 ° C TJ = −55 ° C<br>10<br>10<br>3.0 V<br>0 0<br>0 1 2 3 4 5 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.016 0.012<br>ID = 20 A TJ = 25 ° C<br>0.014 TJ = 25 ° C<br>0.010<br>VGS = 4.5 V<br>0.012<br>0.008<br>0.010<br>0.006 VGS = 10 V<br>0.008<br>0.004<br>0.006<br>0.004 0.002<br>2 4 6 8 10 5 10 15 20 25 30 35 40 45 50 55 60 65 70<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.00 100000<br>ID = 20 A VGS = 0 V<br>1.80 VGS = 10 V<br>1.60<br>10000<br>1.40 TJ = 150 ° C<br>1.20<br>1000 TJ = 125 ° C<br>1.00<br>0.80<br>0.60 100<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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**3** 

**NVTFS5811NL** 

## **TYPICAL CHARACTERISTICS** 

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2200 10<br>2000 VGS = 0 V Q T<br>1800 C iss TJ = 25 ° C 8<br>1600<br>1400<br>6<br>1200<br>1000<br>800 4 Qgs Qgd<br>600<br>4002000 Crss C oss 20 VTIDSDJ = 25 = 20 A = 32 V ° C<br>0 10 20 30 40 0 5 10 15 20 25 30<br>DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>(V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE<br>GS<br>V<br>**----- End of picture text -----**<br>


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1000 60<br>VDD = 32 V VGS = 0 V<br>ID = 20 A 50 TJ = 25 ° C<br>VGS = 4.5 V<br>100 40<br>tr<br>tf 30<br>td(off)<br>10 20<br>td(on)<br>10<br>1.0 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

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1000<br>VGS = 10 V 60 ID = 36 A<br>Single Pulse<br>TC = 25 ° C 50<br>100<br>10  � s 40<br>10 100  � s<br>30<br>1 ms<br>10 ms 20<br>1<br>RDS(on) Limit<br>Thermal Limit dc 10<br>Package Limit<br>0.1 0<br>0.1 1 10 100 25 50 75 100 125 150 175<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**4** 

**NVTFS5811NL** 

## **TYPICAL CHARACTERISTICS** 

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100<br>Duty Cycle = 0.5<br>10 0.2<br>0.1<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 13. Thermal Response<br>DEVICE ORDERING INFORMATION<br>Device Marking Package Shipping [†]<br>NVTFS5811NLTAG 5811 WDFN8 1500 / Tape & Reel<br>(Pb−Free)<br>NVTFS5811NLWFTAG 11LW WDFN8 1500 / Tape & Reel<br>(Pb−Free)<br>NVTFS5811NLTWG 5811 WDFN8 5000 / Tape & Reel<br>(Pb−Free)<br>NVTFS5811NLWFTWG 11LW WDFN8 5000 / Tape & Reel<br>(Pb−Free)<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JA(t)<br>�<br>R<br>**----- End of picture text -----**<br>


†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVTFS5811NL** 

## **PACKAGE DIMENSIONS** 

**WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D 

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2X<br>0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>f D s A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>Pen 4X eee A1 0.00 −−− 0.05 0.000 −−− 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 2 c oth A1 | EES D1D2 2.951.98 3.052.11 3.152.24 0.0780.116 0.0830.120 0.1240.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>“V Y l e ee E3 0.23 0.30 0.40 ee 0.009 0.012 0.016<br>0.10 C HH A h 6Xe y SEATINGPLANEC [==eeee GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>core oh 9° BSSSSS= 0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>K OUTLINE<br>E2<br>E3 M<br>c o ke<br>8 5 L1 3.60<br>G D2<br>BOTTOM VIEW 0.75 Se 0.57 2.30<br>isle r |<br>0.47<br>2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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