NVTA7002NT1G

## NTA7002N, NVTA7002N 

## MOSFET – Single, N-Channel, Small Signal, Gate ESD Protection, SC-75 30 V, 154 mA 

## **http://onsemi.com** 

## **Features** 

- Low Gate Charge for Fast Switching 

- Small 1.6 x 1.6 mm Footprint 

- ESD Protected Gate 

- NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Power Management Load Switch 

- Level Shift 

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RDS(on) ID MAX<br>V(BR)DSS Typ @ VGS (Note 1)<br>1.4  @ 4.5 V<br>30 V 154 mA<br>2.3  @ 2.5 V<br>oo<br>3<br>1<br>2<br>**----- End of picture text -----**<br>


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N−Channel<br>**----- End of picture text -----**<br>


- Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand−Held Computers, etc. 

## **PIN CONNECTIONS** 

**SC−75 (3−Leads)** 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

Gate 1 

~~a~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS 10 V Continuous Drain Steady State = 25 ° C ID 154 mA ~~i~~ Current (Note 1) ~~a~~ Source 2 Power Dissipation Steady State = 25 ° C PD 300 mW (Note 1) ~~ia~~ Pulsed Drain Current tP 10 s IDM 618 mA ~~ef~~ 3 Operating Junction and Storage Temperature ~~=. |~~ TJ, ~~|~~ −55 to ° C TSTG 150 ~~es~~ 2 ~~a~~ Continuous Source Current (Body Diode) ISD 154 mA **SC−75 / SOT−416** 1 Lead Temperature for Soldering Purposes(1/8 ″ from case for 10 s) ~~ee~~ TL 260 ° C **CASE 463STYLE 5STYLE 5** ~~Pe~~ 

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3 Drain<br>**----- End of picture text -----**<br>


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(Top View)<br>3 MARKING DIAGRAM<br>3<br>2<br>1 T6 M<br>SC−75 / SOT−416<br>1 oo 2<br>CASE 463STYLE 5STYLE 5<br>T6 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State (Note 1)|R JA|416|°C/W|



## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2012 **May, 2019 − Rev. 5** 

**NTA7002N/D** 

## **NTA7002N, NVTA7002N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless|otherwise sp|ecified)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 100�A|30|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 30 V|||1.0|�A|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 20 V,<br>T = 85°C|||1.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±10 V|||±25|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±5 V|||±1.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±5 V<br>T = 85°C|||±1.0|�A|
|**ON CHARACTERISTICS**(Note 2)|||||||
|Gate Threshold Voltage|VGS(TH)|VDS= VGS, ID= 100�A|0.5|1.0|1.5|V|
|Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 154 mA||1.4|7.0|�|
|||VGS= 2.5 V, ID= 154 mA||2.3|7.5||
|Forward Transconductance|gFS|VDS= 3 V, ID= 154 mA||80||mS|
|**CAPACITANCES**|||||||
|Input Capacitance|CISS|VDS= 5.0 V, f = 1 MHz,<br>VGS= 0 V||11.5|20|pF|
|Output Capacitance|COSS|||10|15||
|Reverse Transfer Capacitance|CRSS|||3.5|6.0||
|**SWITCHING CHARACTERISTICS**(Note 3)|||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 5.0 V,<br>ID= 75 mA, RG= 10�||13||ns|
|Rise Time|tr|||15||ns|
|Turn−Off Delay Time|td(OFF)|||98|||
|Fall Time|tf|||60|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|Forward Diode Voltage|VSD|VGS= 0 V, IS= 154 mA||0.77|0.9|V|



2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTA7002N, NVTA7002N** 

## **TYPICAL PERFORMANCE CURVES** 

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0.2<br>0.18 VGS = 10 VGS = 10 V = 10 V TJ = 25J = 25 = 25 ° C<br>5 V<br>0.16 2.8 V<br>0.14 2.4 V 2 V<br>0.12<br>0.1<br>0.08<br>0.06<br>0.04<br>1.4 V<br>0.02<br>1.2 V<br>0<br>0 0.4 0.8 1.2 1.6 2.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics<br>2.5<br>VGS = 4.5 VGS = 4.5 V = 4.5 V<br>TJ = 125J = 125 = 125 ° C<br>2<br>1.5<br>TJ = 25J = 25 = 25 ° C<br>1<br>TJ = −55J = −55 = −55 ° C<br>0.5<br>0 0.05 0.1 0.15 0.2<br>ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>ID, D,<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


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0.2 0.2<br>0.18 VGS = 10 VGS = 10 V = 10 V TJ = 25J = 25 = 25 ° C VDS = 5 V<br>5 V<br>0.16 2.8 V 0.16<br>0.14 2.4 V 2 V<br>0.12 0.12<br>0.1<br>0.08 0.08<br>0.06 TJ = 125 ° C<br>0.04 0.04<br>1.4 V TJ = 25 ° C<br>0.02 1.2 V T J  = −55 ° C<br>0 0<br>0 0.4 0.8 1.2 1.6 2.0 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS), DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>2.5 2.5<br>VGS = 4.5 VGS = 4.5 V = 4.5 V TJ = 25 ° C<br>2 TJ = 125J = 125 = 125 ° C 2 VGS = 2.5 V<br>1.5 1.5<br>TJ = 25J = 25 = 25 ° C VGS = 4.5 V<br>1 1<br>TJ = −55J = −55 = −55 ° C<br>0.5 0.5<br>0 0.05 0.1 0.15 0.2 0 0.05 0.1 0.15 0.2<br>ID, DRAIN CURRENT (AMPS)D, DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Gate Voltage<br>2 1000<br>ID = 0.15 A VGS = 0 V<br>1.8<br>VGS = 4.5 V<br>1.6<br>1.4<br>100<br>1.2 TJ = 150 ° C<br>1<br>0.8<br>10<br>0.6<br>0.4 TJ = 125 ° C<br>0.2<br>0 1<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID, D,  ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>IDSS<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**Figure 5. On−Resistance Variation with Temperature** 

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**3** 

**NTA7002N, NVTA7002N** 

## **TYPICAL PERFORMANCE CURVES** 

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25 1000<br>Ciss TJ = 25 ° C VDD = 5.0 V<br>ID = 75 mA<br>20 Crss VGS = 4.5 V<br>100 td(off)<br>15 tf<br>10 tr<br>Ciss 10 td(on)<br>5 C oss<br>0 VDS = 0 V VGS = 0 V Crss 1<br>10 5 0 5 10 15 20 1 10 100<br>VGS VDS RG, GATE RESISTANCE (OHMS)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 8. Resistive Switching Time<br>Figure 7. Capacitance Variation Variation vs. Gate Resistance<br>0.16<br>VGS = 0 V<br>0.14 T J  = 25 ° C<br>0.12<br>0.1<br>0.08<br>0.06<br>0.04<br>0.02<br>0<br>0.5 0.55 0.6 0.65 0.7 0.75 0.8<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTA7002NT1G|SC−75<br>(Pb−Free)|3000 / Tape & Reel|
|NVTA7002NT1G|SC−75<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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3 oe 2<br>1<br>SCALE 4:1<br>**----- End of picture text -----**<br>


**SC−75/SOT−416** CASE 463−01 ISSUE G 

DATE 07 AUG 2015 

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−E− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>T o T Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>e −D− A 0.70 0.80 0.90 0.027 0.031 0.035<br>1 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) a M D HE 0.20 (0.008) E CDE 0.101.550.70 0.151.600.80 0.251.650.90 0.0040.0610.027 0.0060.0630.031 0.0100.0650.035<br>e 1.00 BSC 0.04 BSC<br>L 0.10 0.15 0.20 0.004 0.006 0.008<br>q a—D = B HE 1.50 1.60 BE 1.70 0.060 0.063 0.067<br>C<br>A GENERIC<br>MARKING DIAGRAM*<br>L A1<br>XX M<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE<br> 2. EMITTER Jo  2. N/C  2. ANODE 1 a<br> 3. COLLECTOR  3. CATHODE  3. CATHODE<br>XX = Specific Device Code<br>STYLE 4: STYLE 5: M = Date Code<br>PIN 1. CATHODE PIN 1. GATE<br> 2. CATHODE  2. SOURCE = Pb−Free Package<br> 3. ANODE  3. DRAIN *This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>aT<br>1.803 0.787<br>0.071 0.031<br>7 Mm _<br>_ 0.508 a<br>0.020 1.000<br>0.039<br>SCALE 10:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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