NVS4409NT1G

## NTS4409N, NVS4409N 

## Small Signal MOSFET **25 V, 0.75 A, Single, N−Channel, ESD Protection, SC−70/SOT−323** 

## **Features** 

## **http://onsemi.com** 

- Advance Planar Technology for Fast Switching, Low RDS(on) 

- Higher Efficiency Extending Battery Life 

|• <br>•|Advance Planar Technology for Fast Switching, Low RDS(on)DS(on)<br> Higher Efficiency Extending Battery Life||**http://onsemi.com**||
|---|---|---|---|---|
|• <br>•|Higher Efficiency Extending Battery Life<br> AEC−Q101 Qualified and PPAP Capable − NVS4409N<br> These Devices are Pb−Free and are RoHS Compliant|**V(BR)DSS**<br>25 V|**RDS(on) Typ**<br>249 m @ 4.5 V|**ID Max**<br>0.75 A|
||||299 m @ 2.7 V||



## **Applications** 

• Boost and Buck Converter • Load Switch **SC−70 (3−Leads)** • Battery Protection Gate 1 **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Rating Symbol Value Unit** 3 Drain Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage VGS 8.0 V Source 2 Drain Current t < 5 s TA = 25 ° C ID 0.75 A Continuous Drain Current Steady TA = 25 ° C ID 0.7 A Top View (Note 1) State TA = 75 ° C 0.6 **MARKING DIAGRAM &** Power Dissipation (Note 1) Steady State PD 0.28 W **PIN ASSIGNMENT** Power Dissipation (Note 1) t 5 s PD 0.33 W 3 Pulsed Drain Current tp = 10 s IDM 3.0 A Drain ~~——~~ Operating Junction and Storage Temperature ~~Er~~ TJ, −55 to ° C TSTG +150 T4 W **SC−70/SOT−323** Source Current (Body Diode) (Note 1) IS 0.3 A **CASE 419** Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 ° C **STYLE 8** 1 2 Gate Source ~~——H~~ ESD Rating − Machine Model 25 V T4 = Device Code **THERMAL RESISTANCE RATINGS** W = Work Week ~~eo~~ **Rating Symbol Max Unit** | ~~:~~ = Pb−Free Package (Note: Microdot may be in either location) Junction−to−Ambient – Steady State (Note 1) R JA 450 ° C/W Junction−to−Ambient − t 5 s (Note 1) R JA 375 **ORDERING INFORMATION** Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended **Device Package Shipping**[†] Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NTS4409NT1G SOT−323 3000 / Tape & Reel 1. Surface mounted on FR4 board using 1 in sq pad size (Pb−Free) (Cu area = 1.127 in sq [1 oz] including traces). NVS4409NT1G SOT−323 3000 / Tape & Reel (Pb−Free) ~~=~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2011 **October, 2011 − Rev. 4** 

**NTS4409N/D** 

## **NTS4409N, NVS4409N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C un|less otherwise noted)|less otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID|= 250�A|25|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||30||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 20 V|TJ= 25°C|||0.5|�A|
||||TJ= 70°C|||2.0||
||||TJ= 125°C|||5.0||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 8.0 V||||100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.65||1.5|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||−2.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 0.6 A|||249|350|m�|
|||VGS= 2.7 V, ID= 0.2 A|||299|400||
|||VGS= 4.5 V, ID= 1.2 A|||260|||
|Forward Transconductance|gFS|VDS= 5.0 V, ID= 0.5 A|||0.5||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,<br>VDS= 10 V|||49|60|pF|
|Output Capacitance|COSS||||22.4|30||
|Reverse Transfer Capacitance|CRSS||||8.0|12||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V,<br>ID= 0.8 A|||1.2|1.5|nC|
|Threshold Gate Charge|QG(TH)||||0.2|||
|Gate−to−Source Charge|QGS||||0.28|0.50||
|Gate−to−Drain Charge|QGD||||0.3|0.40||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 0.7 A, RG= 51�|||5.0|12|ns|
|Rise Time|tr||||8.2|8.0||
|Turn−Off Delay Time|td(OFF)||||23|35||
|Fall Time|tf||||41|60||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 0.6 A|TJ= 25°C||0.82|1.20|V|



2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTS4409N, NVS4409N** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [489 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.2 3.2<br>8 V TJ = 25 ° C VDS ≥  10 V<br>4.5 V<br>2.4 3 V 2.4<br>2.5 V<br>VGS = 2 V<br>1.6 1.6<br>0.8 0.8<br>VGS = 1.5 V 25 ° C<br>0 0 TJ = 125 ° C TJ = −55 ° C<br>0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.8 0.8<br>VGS = 4.5 V VGS = 2.5 V<br>0.6 0.6 TJ = 125 ° C<br>TJ = 125 ° C<br>0.4 0.4 TJ = 25 ° C<br>TJ = 25 ° C<br>0.2 TJ = −55 ° C 0.2 TJ = −55 ° C<br>0 0<br>0 0.8 1.6 2.4 3.2 0 0.8 1.6 2.4 3.2<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS) DRAIN CURRENT (AMPS)<br>ID,  ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Drain Current and Temperature** 

**Figure 4. On−Resistance vs. Drain Current and Gate Voltage** 

**==> picture [488 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
2 100<br>ID = 0.75 A TJ = 25 ° C<br>1.8 VGS = 0 V<br>VGS = 2.5 V 80<br>1.6<br>60<br>1.4<br>VGS = 4.5 V Ciss<br>1.2<br>40<br>1<br>20 Coss<br>0.8<br>Crss<br>0.6 0<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25<br>TJ, JUNCTION TEMPERATURE ( ° C) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN−TO−SOURCE<br>C, CAPACITANCE (pF)<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Capacitance Variation** 

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**3** 

**NTS4409N, NVS4409N** 

**TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [234 x 179] intentionally omitted <==**

**----- Start of picture text -----**<br>
5<br>Q G(TOT)<br>4<br>VGS<br>3<br>QGS QGD<br>2<br>1<br>ID = 0.8 A<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [237 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
3.2<br>VGS = 0 V<br>2.4<br>1.6<br>0.8<br>TJ = 125 ° C<br>TJ = 25 ° C<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>, SOURCE CURRENT (AMPS)<br>IS<br>**----- End of picture text -----**<br>


**Figure 8. Diode Forward Voltage vs. Current** 

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**4** 

**NTS4409N, NVS4409N** 

## **PACKAGE DIMENSIONS** 

**SC−70 (SOT−323)** CASE 419−04 ISSUE N 

**==> picture [480 x 352] intentionally omitted <==**

**----- Start of picture text -----**<br>
D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>e1 2. CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.032 0.035 0.040<br>HE E A1 0.00 0.05 0.10 0.000 0.002 0.004<br>1 2 A2 0.70 REF 0.028 REF<br>b 0.30 0.35 0.40 0.012 0.014 0.016<br>c 0.10 0.18 0.25 0.004 0.007 0.010<br>i maa nl = D ==-=== 1.80 2.10 == 2.20 0.071 0.083 0.087<br>b E 1.15 1.24 1.35 0.045 0.049 0.053<br>e 1.20 1.30 1.40 0.047 0.051 0.055<br>e e1 0.65 BSC 0.026 BSC<br>L 0.20 0.38 0.56 0.008 0.015 0.022<br>H E 2.00 2.10 2.40 0.079 0.083 0.095<br>A A2 c STYLE 8:PIN 1. GATE<br> 2. SOURCE<br> 3. DRAIN<br>0.05 (0.002) L<br>__ i A1 , Jos<br>SOLDERING FOOTPRINT*<br>0.65<br>0.65 0.025<br>0.025<br>1.9<br>Go.<br>0.075<br>0.9<br>0.035<br>0.7<br>LE<br>0.028<br>SCALE 10:1 mm<br>ate _ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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