NVR4003NT3G

NTR4003N, NVR4003N 

## MOSFET – Single, N-Channel, Small Signal, SOT-23 30 V, 0.56 A 

## **Features** 

- Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design 

- Low Gate Charge for Fast Switching 

- ESD Protected Gate 

## **www.onsemi.com** 

|**V(BR)DSS**|**RDS(on) TYP**|**ID MAX**|
|---|---|---|
|30 V|1.5  @ 2.5 V<br>1.0  @ 4.0 V|0.56 A|



- SOT−23 Package Provides Excellent Thermal Performance 

- Minimum Breakdown Voltage Rating of 30 V 

## **N−Channel** 

- NVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [68 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>1<br>2<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Notebooks: 

   - ♦ Level Shifters 

   - ♦ Logic Switches 

   - ♦ Low Side Load Switches 

## **MARKING DIAGRAM/ PIN ASSIGNMENT** 

- Portable Applications 

**==> picture [158 x 163] intentionally omitted <==**

**----- Start of picture text -----**<br>
3<br>3<br>Drain<br>1<br>2 TR8 M<br>SOT−23<br>CASE 318<br>STYLE 21 = 1 2<br>Gate Source<br>TR8  = Specific Device Code<br>M  = Date Code<br> = Pb−Free Package<br>.<br>(Note: Microdot may be in either location)<br>*Date Code orientation and overbar may vary<br>depending upon manufacturing location.<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>30<br>V<br>Gate−to−Source Voltage<br>VGS<br>±20<br>V<br>Continuous Drain<br>Current (Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>0.5<br>A<br>TA= 85°C<br>0.37<br>Power Dissipation<br>(Note 1)<br>Steady State<br>PD<br>0.69<br>W<br>Continuous Drain<br>Current (Note 1)<br>t < 10 s<br>TA= 25°C<br>ID<br>0.56<br>A<br>TA= 85°C<br>0.40<br>Power Dissipation<br>(Note 1)<br>t < 5 s<br>PD<br>0.83<br>W<br>Pulsed Drain Current<br>tp= 10 s<br>IDM<br>1.7<br>A<br>Operating Junction and Storage Temperature<br>TJ,<br>Tstg<br>−55 to<br>150<br>°C<br>Source Current (Body Diode)<br>IS<br>1.0<br>A<br>Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>TL<br>260<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>~~pe~~<br>~~Se~~<br>~~a~~<br>~~ee ee ee~~<br>~~pf ttt~~<br>~~PC~~<br>~~ee ==~~|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>**SOT−23**<br>**CASE 318**<br>**STYLE 21**<br>2<br>TR8<br>= Specific Device Code<br>M<br>= Date Code<br>= Pb−Free Package<br>1<br>Drain<br>1<br>Gate<br>2<br>Source<br>NTR4003NT1G<br>SOT−23<br>(Pb−Free)<br>3000 / Tape & Reel<br>TR8 M<br>(Note: Microdot may be in either location)<br>*Date Code orientation and overbar may vary<br>depending upon manufacturing location.<br>NTR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>NVR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>=<br>.<br>~~==~~|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>**SOT−23**<br>**CASE 318**<br>**STYLE 21**<br>2<br>TR8<br>= Specific Device Code<br>M<br>= Date Code<br>= Pb−Free Package<br>1<br>Drain<br>1<br>Gate<br>2<br>Source<br>NTR4003NT1G<br>SOT−23<br>(Pb−Free)<br>3000 / Tape & Reel<br>TR8 M<br>(Note: Microdot may be in either location)<br>*Date Code orientation and overbar may vary<br>depending upon manufacturing location.<br>NTR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>NVR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>=<br>.<br>~~==~~|**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>**SOT−23**<br>**CASE 318**<br>**STYLE 21**<br>2<br>TR8<br>= Specific Device Code<br>M<br>= Date Code<br>= Pb−Free Package<br>1<br>Drain<br>1<br>Gate<br>2<br>Source<br>NTR4003NT1G<br>SOT−23<br>(Pb−Free)<br>3000 / Tape & Reel<br>TR8 M<br>(Note: Microdot may be in either location)<br>*Date Code orientation and overbar may vary<br>depending upon manufacturing location.<br>NTR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>NVR4003NT3G<br>SOT−23<br>(Pb−Free)<br>10,000 / Tape &<br>Reel<br>=<br>.<br>~~==~~|
|---|---|---|---|
||†For information on tape and reel specifications,|||
||including part orientation and tape sizes, please|||
||refer to our Tape and Reel Packaging Specification|||
||Brochure, BRD8011/D.|||
|©Semiconductor Components Industries, LLC, 2005<br>**1**|Publication Order Number:|||
|**June, 2019 − Rev. 5**|**NTR4003N/D**|**NTR4003N/D**|**NTR4003N/D**|



Publication Order Number: **NTR4003N/D** 

**NTR4003N, NVR4003N** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient − Steady State (Note 1)|R�JA|180|°C/W|
|Junction−to−Ambient − t < 10 s (Note 1)|R�JA|150||
|Junction−to−Ambient − Steady State (Note 2)|R�JA|300||



1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

2. Surface−mounted on FR4 board using the minimum recommended pad size. 

**www.onsemi.com** 

**2** 

## **NTR4003N, NVR4003N** 

## **ELECTRICAL CHARACTERISTICS** (TJ  =  25 ° C unless otherwise specified) 

|**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Units**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS=  0 V, ID=  100�A||30|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||40||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS=  0 V,<br>VDS=  30 V|TJ= 25°C|||1.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±10 V||||±1.0|�A|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS=  VDS, ID=  250�A||0.8||1.4|V|
|Negative Threshold<br>Temperature Coefficient|VGS(TH)/TJ||||3.4||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS=  4.0 V, ID=  10 mA|||1.0|1.5|�|
|||VGS=  2.5 V, ID=  10 mA|||1.5|2.0||
|Forward Transconductance|gFS|VDS=  3.0 V, ID=  10 mA|||0.33||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS=  0 V, f  =  1.0 MHz,<br>VDS=  5.0 V|||21|42|pF|
|Output Capacitance|Coss||||19.7|40||
|Reverse Transfer Capacitance|Crss||||8.1|16||
|Total Gate Charge|QG(TOT)|VGS=  5.0 V, VDS=  24 V,<br>ID=  0.1 A|||1.15||nC|
|Threshold Gate Charge|QG(TH)||||0.15|||
|Gate−to−Source Gate Charge|QGS||||0.32|||
|Gate−to−Drain Charge|QGD||||0.23|||
|**SWITCHING CHARACTERISTICS**(Note 4)||||||||
|Turn−On Delay Time|td(on)|VGS=  4.5 V, VDD= 5.0 V,<br>ID=  0.1 A, RG= 50�|||16.7||ns|
|Rise Time|tr||||47.9|||
|Turn−Off Delay Time|td(off)||||65.1|||
|Fall Time|tf||||64.2|||
|**SOURCE−DRAIN DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS=  0 V,<br>IS=  10 mA|TJ= 25°C||0.65|0.7|V|
||||TJ= 125°C||0.45|||
|Reverse Recovery Time|tRR|VGS=  0 V, dIS/dt = 8A/�s,<br>IS=  10 mA|||14||ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

4. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**3** 

**NTR4003N, NVR4003N** 

**TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [492 x 605] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.6 1.6<br>VGS = 10 V to 5 V VDS ≥  10 V<br>4.5 V TJ = −55 ° C<br>1.2 1.2<br>TJ = 25 ° C<br>0.8 0.8<br>4 V TJ = 125 ° C<br>0.4<br>0.4 3.5 V<br>2.5 V<br>0 0<br>0 1 2 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>10 1<br>VGS = 10 V<br>8 ID = 0.2 A 0.8 TJ = 125 ° C<br>6 0.6<br>TJ = 25 ° C<br>4 0.4<br>2 0.2 TJ = −55 ° C<br>0 0<br>2.4 2.8 3.2 3.6 4 0 0.1 0.2 0.3 0.4 0.5 0.6<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Gate−to−Source<br>Figure 4. On−Resistance vs. Drain Current and<br>Voltage<br>Temperature<br>1.80 1000<br>ID = 0.3 A VGS = 0 V<br>1.60 VGS = 4.5 V<br>1.40 TJ = 150 ° C<br>1.20<br>100<br>1.00<br>TJ = 125 ° C<br>0.80<br>0.60 10<br>−25 −50 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>DRAIN CURRENT (A) DRAIN CURRENT (A)<br>ID,  ID,<br>) � ) �<br>DRAIN−TO−SOURCE RESISTANCE ( DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),  DS(on),<br>R R<br>) �<br>, LEAKAGE (nA)<br>(NORMALIZED)<br>IDSS<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**www.onsemi.com** 

**4** 

**NTR4003N, NVR4003N** 

**TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

**==> picture [489 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 5<br>TJ = 25 ° C T J = 25 ° C<br>VGS = 0 V ID = 0.1 A<br>40 4<br>30 3<br>20 Ciss 2<br>Coss<br>10 Crss 1<br>0 0<br>0 4 8 12 16 20 0 0.4 0.8 1.2<br>DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (V)<br>GS,<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−to−Source & Drain−to−Source Voltage vs. Total Charge** 

**==> picture [242 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1<br>VGS = 0 V<br>0.1<br>0.01 TJ = 150 ° C TJ = 25 ° C<br>0.001<br>0.4 0.6 0.8<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

**www.onsemi.com** 

**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [494 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**