NVMYS1D3N04CTWG

Power MOSFET, N Channel, 40 V, 252 A, 1150 µohm, LFPAK, Surface Mount

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Manufacturer: ONSEMI
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:252A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00096ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V;
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 4Pins
Channel Type: N Channel
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 134W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: LFPAK
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 252A
Drain Source On State Resistance: 1150µohm
Gate Source Threshold Voltage Max: 3.5V

Delivery and price
Units per pack	1000
Price	0.913 €
Current stock	5272
Lead time	7 days

Datasheet

Updated at February 26, 2026