NVMYS014N06CLTWG

## NVMYS014N06CL MOSFET – Power, Single N-Channel ~~a~~ 60 V, 15 m 37 A 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

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- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

**V(BR)DSS RDS(ON) MAX ID MAX** • LFPAK4 Package, Industry Standard 15 m @ 10 V • AEC−Q101 Qualified and PPAP Capable 60 V 37 A 21.5 m @ 4.5 V • These Devices are Pb−Free and are RoHS Compliant ~~eee~~ ee **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) D (5) ~~es~~ **Parameter** ~~Gs~~ **Symbol** ~~ee~~ **Value Unit** Drain−to−Source Voltage VDSS 60 V ~~eses ee~~ Gate−to−Source Voltage VGS ± 20 V ~~es~~ Continuous Drain Steady TC = 25 ° C ~~Gs~~ ID ~~Ge~~ 36 ~~ee~~ A G (4) Current R(Notes 1, 2, 3)JC State TC = 100 ° C 21 S (1,2,3) Power Dissipation TC = 25 ° C PD 37 W **N−CHANNEL MOSFET** R JC (Notes 1, 2) TC = 100 ° C 12 ~~re a~~ Continuous Drain Steady TA = 25 ° C ID 12 A **MARKING** Current R(Notes 1, 2, 3)JA State TA = 100 ° C 8.4 **DIAGRAM** ~~ESE+~~ Power Dissipation TA = 25 ° C PD 3.8 W D R JA (Notes 1 & 2) TA = 100 ° C 1.9 014N06 ~~a~~ > ~~=~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 185 A **LFPAK4** AWLYWCL Operating Junction and Storage Temperature TJ, Tstg −55 to ° C **CASE 760AB** + 175 1 Source Current (Body Diode) IS 31 A S S S G ~~es~~ 014N06CL = Specific Device Code Energy (TSingle Pulse Drain−to−Source Avalanche J = 25 ° C, IL(pk) = 1.6 A) EAS 65 mJ A = Assembly Location ~~— Gs ee~~ WL = Wafer Lot Lead Temperature for Soldering Purposes TL 260 ° C Y = Year (1/8 ″ from case for 10 s) W = Work Week ~~ee eee~~ 

- LFPAK4 Package, Industry Standard 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information on page 5 of this data sheet. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

||~~es~~|~~es~~||
|---|---|---|---|
|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~<br>~~es~~|**Value**<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~|
|Junction−to−Case − Steady State|R JC<br>~~es ~~|4.1<br> ~~es~~|°C/W|
|Junction−to−Ambient − Steady State (Note 2)|R JA|39||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVMYS014N06CL/D** 

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© Semiconductor Components Industries, LLC, 2017 **July, 2019 − Rev. 0** 

## **NVMYS014N06CL** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||26||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 25�A||1.2||2.0|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||−5.0||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 10 A||12.5|15|m�|
|||VGS= 4.5 V|ID= 10 A||17.9|21.5||
|Forward Transconductance|gFS|VDS= 15 V, ID= 15 A|||43||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||620||pF|
|Output Capacitance|COSS||||340|||
|Reverse Transfer Capacitance|CRSS||||7.0|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 48 V; ID= 10 A|||4.5||nC|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V; ID= 10 A|||9.7|||
|Threshold Gate Charge|QG(TH)|VGS= 10 V, VDS= 48 V; ID= 10 A|||1.3|||
|Gate−to−Source Charge|QGS||||2.1|||
|Gate−to−Drain Charge|QGD||||1.0|||
|Plateau Voltage|VGP||||3.1||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 48 V,<br>ID= 10 A, RG= 1.0�|||7.0||ns|
|Rise Time|tr||||13|||
|Turn−Off Delay Time|td(OFF)||||25|||
|Fall Time|tf||||6.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.85|1.2|V|
||||TJ= 125°C||0.72|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 20 A/�s,<br>IS= 10 A|||23.8||ns|
|Charge Time|ta||||11.9|||
|Discharge Time|tb||||11.8|||
|Reverse Recovery Charge|QRR||||11.6||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

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**NVMYS014N06CL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [244 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>VGS = 4.5 V to 10 VGS = 4.5 V to 10 V = 4.5 V to 10 V<br>35<br>30 3.6 V<br>25<br>3.4 V<br>20<br>3.2 V<br>15<br>10 3.0 V<br>2.8 V<br>5<br>2.6 V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)DS, DRAIN−TO−SOURCE VOLTAGE (V), DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


**==> picture [489 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 30<br>VGS = 4.5 V to 10 VGS = 4.5 V to 10 V = 4.5 V to 10 V VDS = 10 V<br>35<br>25<br>30 3.6 V<br>20<br>25<br>3.4 V<br>20 15<br>3.2 V<br>15<br>10 TJ = 25 ° C<br>10 3.0 V<br>2.8 V 5<br>5 2.6 V TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)DS, DRAIN−TO−SOURCE VOLTAGE (V), DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>40 26<br>TJ = 25 ° C 24 TJ = 25 ° C<br>35 ID = 10 A<br>22 VGS = 4.5 V<br>30<br>20<br>25 18<br>16<br>20<br>14 VGS = 10 V<br>15<br>12<br>10 10<br>3 4 5 6 7 8 9 10 10 12 14 16 18 20 22 24 26 28 30<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.1 10000<br>VGS = 10 V TJ = 150 ° C<br>1.9 ID = 10 A<br>1.7 TJ = 125 ° C<br>1000<br>1.5<br>1.3 TJ = 85 ° C<br>100<br>1.1<br>0.9<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 175 5 15 25 35 45 55<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>IDD ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**Figure 5. On−Resistance Variation with Temperature** 

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**NVMYS014N06CL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [247 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
1,000<br>CISS<br>100 COSS<br>10<br>VGS = 0 V CRSS<br>TJ = 25 ° C<br>f = 1 MHz<br>1<br>0 10 20 30 40 50 60<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>100<br>td(off)<br>tf<br>t r<br>10 td(on)<br>VGS = 10 V<br>VDS = 48 V<br>1<br>0 10 20 30 40 50<br>RG, GATE RESISTANCE ( � )<br>C, CAPACITANCE (pF)<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**==> picture [244 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>TC = 25 ° C<br>VGS ≤  10 V<br>Single Pulse<br>100 1 ms<br>10  � s<br>10 ms<br>10<br>1<br>RDS(on) Limit 0.5 ms<br>Thermal Limit<br>Package Limit<br>0.1<br>0.1 1 10 100 1000<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**==> picture [236 x 590] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 V DS  = 48 V<br>TJ = 25 ° C<br>8 I D  = 10 A<br>7<br>6<br>5<br>4 Q GS Q GD<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>QG, TOTAL GATE CHARGE (nC)<br>Figure 8. Gate−to−Source vs. Total Charge<br>10<br>V GS = 0 V TJ = −55 ° C<br>T J  = 25 ° C<br>8<br>TJ = 125 ° C<br>6<br>4<br>2<br>0<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 10. Diode Forward Voltage vs. Current<br>100<br>10 TJ (initial) = 25 ° C<br>1 T J  (initial) = 100 ° C<br>0.1<br>0.00001 0.0001 0.001 0.01<br>TIME IN AVALANCHE (s)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>, SOURCE CURRENT (A)<br>IS<br>, (A)<br>IPEAK<br>**----- End of picture text -----**<br>


**Figure 12. IPEAK vs. Time in Avalanche** 

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**NVMYS014N06CL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>1<br>2%<br>1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMYS014N06CLTWG|014N06CL|LFPAK4<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVMYS014N06CL** 

## **PACKAGE DIMENSIONS** 

**LFPAK4 5x6** CASE 760AB ISSUE A 

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