NVMTS0D7N04CTXG

## NVMTS0D7N04C 

## Power MOSFET 

## **40 V, 0.67 m** Q **430 A, Single N−Channel** 

## **Features** 

- Small Footprint (8x8 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

## **www.onsemi.com** 

- Power 88 Package, Industry Standard 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

||||~~es~~|~~es~~||
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|||**Symbol**<br>~~es~~<br>~~es~~<br>~~es ee~~|**Value**<br>~~es~~<br>~~es~~<br>~~ee~~|**Unit**<br>~~es~~|
|Drain−to−Source Voltage<br>~~es~~<br>~~a~~|||VDSS<br>~~es~~<br>~~es~~<br>~~es ee~~<br>es<br>|40<br>~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|V<br>~~es~~<br>|
|Gate−to−Source Voltage<br>~~es~~<br>~~a~~|||VGS<br>~~es ee~~<br>~~es~~<br>es<br>|±20<br>~~ee~~<br>~~es~~<br>~~ee~~<br>|V<br>~~es~~<br>|
|Continuous Drain<br>Current R JC<br>(Notes 1, 3)<br>~~a ~~<br>~~a~~|Steady<br>State<br> <br>~~ee~~<br>~~|~~<br>|TC= 25°C<br>~~ee~~<br>~~|~~|ID<br>es <br>~~ee~~<br>~~ee~~|430<br>~~ee~~<br>~~ee~~<br>~~||~~|A<br>~~ee~~<br>~~ee~~|
|||TC= 100°C<br> ~~ee~~<br>~~|~~<br>~~ee~~||304<br> ~~ee~~<br>~~ee~~<br>~~||~~<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~a~~<br>~~ee~~||TC= 25°C<br>~~ee~~<br>~~|~~<br>|PD<br>~~ee~~<br>|273<br>~~ee~~<br>~~Pe~~<br>|W<br>~~ee~~<br>|
|||TC= 100°C<br>~~ee~~<br>~~|~~<br>||136<br>~~ee~~<br>~~Pe~~<br>||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br>~~a ~~<br>~~ee~~|Steady<br>State<br> ~~ee ~~<br>~~|~~<br> <br>~~eee~~|TA= 25°C<br> ~~ee~~<br>~~|~~<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~|51<br>~~ee~~<br>~~Pe~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|||TA= 100°C<br>~~|~~<br>~~ee~~||37<br>~~Pe~~<br>~~ee~~||
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~ee ~~<br>~~a~~||TA= 25°C<br>~~|~~<br> ~~ee~~<br>~~eee~~|PD<br>~~ee~~<br>~~eee~~|3.9<br>~~Pe~~<br>~~ee~~<br>~~ee~~|W<br>~~ee~~<br>~~ee~~|
|||TA= 100°C<br>~~eee~~||2.0<br>~~ee~~||
|Pulsed Drain Current<br>~~a ~~|TA= 25°C, tp= 10 s<br> ~~eee~~||IDM<br>~~eee~~|900<br>~~ee~~|A<br>~~ee~~|
|Operating Junction and Storage Temperature<br>~~ee~~|||TJ, Tstg|−55 to<br>+ 175|°C|
|Source Current (Body Diode)<br>~~ee~~|||IS|1250|A|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 40 A)<br>~~ee~~|||EAS|1216|mJ|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**V(BR)DSS RDS(ON) MAX ID MAX** 40 V 0.67 m @ 10 V 430 A ~~eeee ee~~ 

**==> picture [108 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
D (5−8)<br>G (1)<br>S (2−4)<br>N−CHANNEL MOSFET<br>**----- End of picture text -----**<br>


**DFNW8 TX SUFFIX CASE 507AP** 

## **MARKING DIAGRAM** 

XXXXXXXX AWLYWW 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|~~es ee~~|~~ee~~|~~ee~~||
|---|---|---|---|
|**Parameter**<br>~~es ee~~|**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**|
|Junction−to−Case − Steady State<br>~~es ee~~<br>~~j=}~~|R JC<br>~~ee~~<br>~~j=}~~|0.10<br>~~ee~~<br>~~j=}~~|°C/W<br>||
|Junction−to−Ambient − Steady State (Note 2)<br>~~j=}~~<br>~~ee~~|R JA<br>~~j=}~~<br>~~ee~~|30.4<br>~~j=}~~<br>~~ee~~||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

XXX = Device Code ~~—e~~ (8 A−N characters max) A = Assembly Location WL = 2−digit Wafer Lot Code Y = Year Code WW = Work Week Code 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **NVMTS0D7N04C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2018 − Rev. 0** 

## **NVMTS0D7N04C** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||20||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||2.0||4.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ||||−8.5||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||0.57|0.67|m�|
|Forward Transconductance|gFS|VDS=5 V, ID= 50 A|||200||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||9281||pF|
|Output Capacitance|COSS||||5387|||
|Reverse Transfer Capacitance|CRSS||||176|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V; ID= 50 A|||140||nC|
|Threshold Gate Charge|QG(TH)|VGS= 10 V, VDS= 20 V; ID= 50 A|||22.7|||
|Gate−to−Source Charge|QGS||||37|||
|Gate−to−Drain Charge|QGD||||28.3|||
|Plateau Voltage|VGP||||4.28||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 20 V,<br>ID= 50 A, RG= 2.5�|||28.9||ns|
|Rise Time|tr||||18.1|||
|Turn−Off Delay Time|td(OFF)||||61.0|||
|Fall Time|tf||||20.4|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 50 A|TJ= 25°C||0.9|1.2|V|
||||TJ= 125°C||0.8|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 50 A|||88.9||ns|
|Charge Time|ta||||57.9|||
|Discharge Time|tb||||31|||
|Reverse Recovery Charge|QRR||||191||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

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**NVMTS0D7N04C** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
1000 1000<br>7 V to 10 V<br>900 900 V DS  = 3 V<br>800 6 V 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 5 V 300 TJ = 25 ° C<br>200 200<br>100 100 TJ = 125 ° C<br>0 4 V 0 TJ = −55 ° C<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>2.0 1.0<br>1.8 TIDJ = 50 A = 25 ° C 0.9 TVJGS = 2 = 10 V5 ° C<br>1.6<br>0.8<br>1.4<br>0.7<br>1.2<br>0.6<br>1.0<br>0.5<br>0.8<br>0.4<br>0.6<br>0.4 0.3<br>0.2 0.2<br>4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 1.E−03<br>1.7 V GS  = 10 V TJ = 175 ° C<br>1.6 ID = 50 A 1.E−04 TJ = 150 ° C<br>1.5 TJ = 125 ° C<br>1.E−05<br>1.4<br>1.3 TJ = 85 ° C<br>1.E−06<br>1.2<br>1.1<br>1.E−07<br>1.0 TJ = 25 ° C<br>0.9 1.E−08<br>0.8<br>0.7 1.E−09<br>−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, REVERSE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN−TO−SOURCE CURRENT (A)<br>IDS<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, NORMALIZED DRAIN−TO−<br>SOURCE ON−RESISTANCE<br>DS(on) , REVERSE LEAKAGE CURRENT (A)<br>R IDSS<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**NVMTS0D7N04C** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100K<br>14<br>C ISS<br>10K 12<br>QT<br>COSS 10<br>1K<br>8<br>CRSS<br>100 6<br>4 QGS QGD V DS  = 20 V<br>10 Vf = 1 MHzGS = 0 V 2 TIDJ = 50 A = 25 ° C<br>1 0<br>0.1 1 10 0 50 100 150 200<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**==> picture [243 x 174] intentionally omitted <==**

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1000<br>td(off)<br>tf<br>tr<br>100 t d(on)<br>10<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>t, SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 8. Gate−to−Source vs. Total Gate Charge** 

**==> picture [238 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VGS = 0 V<br>10<br>1<br>0.1<br>TJ = 150 ° C<br>0.01<br>TJ = 25 ° C TJ = −55 ° C<br>0.001<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

**==> picture [490 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 1K<br>T J(initial)  = 25 ° C<br>100 100<br>10  � s<br>10 TC = 25 ° C 10 TJ(initial) = 100 ° C<br>Single Pulse<br>VGS ≤  10 V 0.5 ms<br>1 ms<br>1 RDS(on) Limit 10 ms 1<br>Thermal Limit<br>Package Limit<br>0.1 0.1<br>0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1K 10K<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. IPEAK vs. Time in Avalanche** 

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**4** 

**NVMTS0D7N04C** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10 20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>PULSE TIME (sec)<br>C/W)<br>°<br>(t) (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMTS0D7N04CTXG|0D7N04C|POWER 88<br>(Pb−Free)|TBD / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVMTS0D7N04C** 

## **PACKAGE DIMENSIONS** 

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**DFNW8 8.3x8.4, 2P** CASE 507AP ISSUE O 

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**6** 

**NVMTS0D7N04C** 

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