NVMJS1D3N04CTWG

## NVMJS1D3N04C 

## Power MOSFET **40 V, 1.3 m** Q **235 A, Single N−Channel** 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

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- LFPAK8 Package, Industry Standard 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**V(BR)DSS RDS(ON) MAX ID MAX** 40 V 1.3 m @ 10 V 235 A ~~a a~~ 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

~~ee~~ **Parameter Symbol Value Unit** D (5,8) Drain−to−Source Voltage VDSS 40 V ~~eeee~~ Gate−to−Source Voltage VGS ± 20 V ~~a~~ Continuous Drain Steady TC = 25 ° C ID 235 A Current R(Notes 1, 3)JC State TC = 100 ° C 166 G (4) ~~=e~~ Power DissipationR JC (Note 1) TTCC = 100 = 25 °° CC PD ~~|~~ 12864 W **N−CHANNEL MOSFET** ~~3~~ S (1,2,3) ~~pe~~ Continuous Drain Steady ~~|es~~ TA = 25 ° C ~~aaee~~ ID ~~ee~~ 41 A Current R(Notes 1, 2, 3)JA State TA = 100 ° C 29 **MARKING** Power Dissipation TA = 25 ° C PD 3.8 W **DIAGRAM** R JA (Notes 1 & 2) TA = 100 ° C 1.9 D D D D ~~Seaa pe~~ Pulsed Drain Current TA = 25 ° ~~a~~ C, tp = 10 s I ~~ee~~ DM ~~ee~~ 900 A ~~a~~ Operating Junction and Storage Temperature TJ, Tstg −55 to ° C a ~~a~~ 1D3N04 + 175 C ~~re~~ **LFPAK8** AWLYW Source Current (Body Diode) IS 122 A **CASE 760AA** Single Pulse Drain−to−Source Avalanche EAS 739 mJ 1 Energy (IL(pk) = 19 A) S S S G Lead Temperature for Soldering Purposes TL 260 ° C ″ 1D3N04C= Specific Device Code (1/8 from case for 10 s) A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the ~~ee eee~~ WL = Wafer Lot device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. W = Work Week 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

**Parameter Symbol Value Unit** Junction−to−Case − Steady State R JC 1.2 ° C/W ~~nnnpl~~ Junction−to−Ambient − Steady State (Note 2) R JA 39 ~~il~~ 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVMJS1D3N04C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2018 − Rev. 0** 

## **NVMJS1D3N04C** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||9.6||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 170�A||2.5||3.5|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ||||−8.6||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 50 A||1.1|1.3|m�|
|Forward Transconductance|gFS|VDS=15 V, ID= 50 A|||145||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||4300||pF|
|Output Capacitance|COSS||||2100|||
|Reverse Transfer Capacitance|CRSS||||59|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V; ID= 50 A|||65||nC|
|Threshold Gate Charge|QG(TH)|VGS= 10 V, VDS= 20 V; ID= 50 A|||13|||
|Gate−to−Source Charge|QGS||||20|||
|Gate−to−Drain Charge|QGD||||12|||
|Plateau Voltage|VGP||||4.7||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 20 V,<br>ID= 50 A, RG= 2.5�|||15||ns|
|Rise Time|tr||||47|||
|Turn−Off Delay Time|td(OFF)||||36|||
|Fall Time|tf||||9.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 50 A|TJ= 25°C||0.82|1.2|V|
||||TJ= 125°C||0.68|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 50 A|||63||ns|
|Charge Time|ta||||34|||
|Discharge Time|tb||||29|||
|Reverse Recovery Charge|QRR||||92||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NVMJS1D3N04C** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [242 x 160] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>280 10 V to<br>260 6.0 V<br>240 5.2 V<br>220<br>200<br>180<br>160<br>140 4.8 V<br>120<br>100<br>80<br>60 4.4 V<br>40<br>4.0 V<br>20<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


VDS, DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 1. On−Region Characteristics** 

**==> picture [237 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
300<br>280 VDS = 10 V<br>260<br>240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80 T J  = 25 ° C<br>60<br>40<br>20 TJ = 125 ° C T J  = −55 ° C<br>0<br>0 1 2 3 4 5 6 7<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

**==> picture [491 x 399] intentionally omitted <==**

**----- Start of picture text -----**<br>
5 2.2<br>4.5 TJ = 25 ° C TJ = 25 ° C<br>ID = 50 A 2.0<br>4<br>1.8<br>3.5<br>1.6<br>3<br>2.5 1.4<br>2 1.2 VGS = 10 V<br>1.5<br>1.0<br>1<br>0.5 0.8<br>0 0.6<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 20 40 60 80 100 120 140 160 180 200<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 1.E−03<br>V GS = 10 V<br>1.6 ID = 50 A<br>1.E−04 TJ = 150 ° C<br>1.4<br>1.2 1.E−05<br>1.0 T J  = 125 ° C<br>1.E−06<br>0.8 TJ = 85 ° C<br>0.6 1.E−07<br>−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (A)<br>IDSS<br>, NORMALIZED DRAIN−TO−<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**==> picture [187 x 20] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


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**NVMJS1D3N04C** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>CISS<br>COSS<br>1000<br>C RSS<br>100<br>V GS  = 0 V<br>TJ = 25 ° C<br>f = 1 MHz<br>10<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**==> picture [246 x 385] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>tr<br>td(off) t d(on)<br>10<br>tf VGS = 10 V<br>VDD = 20 V<br>1.0 ID = 50 A<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>Figure 9. Resistive Switching Time Variation<br>vs. Gate Resistance<br>1000<br>100 10  � s<br>10<br>TC = 25 ° C<br>0.5 ms<br>V GS ≤  10 V<br>1 Single Pulse 1 ms<br>RDS(on) Limit 10 ms<br>Thermal Limit<br>Package Limit<br>0.1<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Safe Operating Area** 

**==> picture [234 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>QT<br>9<br>8<br>7<br>6 Q GS Q GD<br>5<br>4<br>3<br>2 VDS = 20 V<br>1 TIDJ = 50 A = 25 ° C<br>0<br>0 10 20 30 40 50 60<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

**==> picture [240 x 158] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VGS = 0 V<br>10<br>TJ = 150 ° C<br>1.0 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**==> picture [151 x 9] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

**==> picture [240 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TJ = 25 ° C<br>10 TJ = 100 ° C<br>1<br>1E−4 1E−3 10E−2<br>TIME IN AVALANCHE (s)<br>, (A)<br>IPEAK<br>**----- End of picture text -----**<br>


**Figure 12. IPEAK vs. Time in Avalanche** 

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**4** 

**NVMJS1D3N04C** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 176] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>10 20%<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br> (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMJS1D3N04CTWG|1D3N04C|LFPAK8<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVMJS1D3N04C** 

## **PACKAGE DIMENSIONS** 

**LFPAK8 5x6** 

CASE 760AA ISSUE A 

**==> picture [452 x 429] intentionally omitted <==**

**----- Start of picture text -----**<br>
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