NVMFS5C460NLWFAFT1G

## NVMFS5C460NL MOSFET – Power, Single N-Channel ~~—~~ 40 V, 4.5 m 78 A 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

**www.onsemi.com** 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

**==> picture [492 x 387] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS RDS(ON) MAX ID MAX<br>• NVMFS5C460NLWF − Wettable Flank Option for Enhanced Optical 4.5 m  @ 10 V<br>Inspection 40 V 78 A<br>• AEC−Q101 Qualified and PPAP Capable eee 7.2 m  @ 4.5 V<br>• These Devices are Pb−Free and are RoHS Compliant<br>MAXIMUM RATINGS  (TJ = 25 ° C unless otherwise noted) D (5,6)<br>Parameter Symbol Value Unit<br>Drain−to−Source Voltage VDSS 40 V<br>Gate−to−Source Voltage VGS ± 20 V G (4)<br>———<br>Continuous Drain  TC = 25 ° C ID 78 A<br>poee Current RPower Dissipation(Notes 1, 3)JC SteadyState | TTCC = 100 = 25 °° CC  ee PD | 5550 | W N−CHANNEL MOSFET re S (1,2,3)<br>R JC (Note 1) TC = 100 ° C 25<br>Continuous Drain  TA = 25 ° C ID 21 A MARKING<br>Current R(Notes 1, 2, 3)JA Steady TA = 100 ° C 15 DIAGRAM D<br>Power Dissipation State TA = 25 ° C PD 3.6 W 1 S D<br>HF}pf RPulsed Drain CurrentJA (Notes 1 & 2) TA = 25 ° C, tTAp  = 100= 10 s ° C IDM Ee 3961.8 A LS CASE 488AA(SO−8FL)DFN5 GSS XXXXXXAYWZZ D<br>Operating Junction and Storage Temperature TJ, Tstg −55 to ° C STYLE 1 D<br>+ 175<br>ee eee XXXXXX = 5C460L |<br>es Source Current (Body Diode) IS 56 A XXXXXX = (NVMFS5C460NL) or<br>XXXXXX = 460LWF<br>Single Pulse Drain−to−Source Avalanche  EAS 107 mJ<br>Energy (IL(pk) = 5 A) XXXXXX = (NVMFS5C460NLWF)<br>ee Lead Temperature for Soldering Purposes(1/8 ″  from case for 10 s) e T es L 260 ° C AYW = Assembly Location= Year= Work Week<br>ee e ee<br>Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>**----- End of picture text -----**<br>


## **THERMAL RESISTANCE MAXIMUM RATINGS** 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 

|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Junction−to−Case − Steady State|R JC|3.0|°C/W|
|Junction−to−Ambient − SteadyState(Note 2)|R JA|42||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVMFS5C460NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2019 − Rev. 6** 

## **NVMFS5C460NL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||21||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||250||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 40�A||1.2||2.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ||||−5.1||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V|ID= 35 A||5.8|7.2|m�|
|||VGS= 10 V|ID= 35 A||3.7|4.5||
|Forward Transconductance|gFS|VDS=15 V, ID= 35 A|||72||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||1300||pF|
|Output Capacitance|COSS||||530|||
|Reverse Transfer Capacitance|CRSS||||22|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V; ID= 35 A|||23||nC|
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 20 V; ID= 35 A|||11||nC|
|Threshold Gate Charge|QG(TH)||||2.5|||
|Gate−to−Source Charge|QGS||||4.7|||
|Gate−to−Drain Charge|QGD||||3.0|||
|Plateau Voltage|VGP||||3.3||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 20 V,<br>ID= 35 A, RG= 1�|||9.2||ns|
|Rise Time|tr||||3.4|||
|Turn−Off Delay Time|td(OFF)||||17|||
|Fall Time|tf||||4.4|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 35 A|TJ= 25°C||0.86|1.2|V|
||||TJ= 125°C||0.75|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 100 A/�s,<br>IS= 35 A|||29||ns|
|Charge Time|ta||||14|||
|Discharge Time|tb||||14|||
|Reverse Recovery Charge|QRR||||12||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

**www.onsemi.com** 

**2** 

**NVMFS5C460NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 619] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 100<br>4.0 V<br>90 90 V DS  = 10 V<br>80 V GS  = 4.5 V to 10 V 80<br>3.6 V<br>70 70<br>60 60<br>50 50<br>3.2 V<br>40 40<br>30 30 TJ = 25 ° C<br>20 2.8 V 20<br>10 10 T J  = 125 ° C TJ = −55 ° C<br>0 0<br>0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>20 8<br>18 TJ = 25 ° C TJ = 25 ° C<br>ID = 35 A 7<br>16<br>VGS = 4.5 V<br>14 6<br>12<br>5<br>10<br>8 4 V GS  = 10 V<br>6<br>3<br>4<br>2 2<br>2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.9 100000<br>1.8 V GS  = 10 V TJ = 175 ° C<br>1.7 ID = 35 A<br>1.6 10000<br>1.5<br>1.4 T J  = 125 ° C<br>1.3 1000<br>1.2<br>1.1 TJ = 85 ° C<br>1.0 100<br>0.9<br>0.8<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**www.onsemi.com** 

**3** 

**NVMFS5C460NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [489 x 594] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000 10<br>9 Q T<br>CISS 8<br>1000<br>COSS 7<br>6<br>100 5<br>QGSGS QGDGD<br>4<br>CRSS 3<br>10<br>VGS = 0 V 2 V DS  = 20 V °<br>Tf = 1 MHzJ = 25 ° C 1 TJ = 25 I DJ  = 35 A  = 25 C<br>1 0<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)G, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge<br>1000 100<br>VGS = 0 VGS = 0 V = 0 V<br>tr 10<br>100 tf<br>td(off) 1<br>td(on)<br>0.1 TJ = 125J = 125 = 125 ° C<br>10<br>VGS = 4.5 V<br>0.01<br>VDS = 20 V TJJ = 25 25 ° C<br>1 I D  = 35 A 0.001 T J  = −55 ° C<br>1 10 100 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 100<br>100<br>10<br>10 TJ (initial)= 25 ° C<br>1 TC = 25 ° C 1 ms500  � s TJ (initial)= 100 ° C<br>VGS ≤  10 V 10 ms 1<br>Single Pulse<br>0.1 RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.01 0.1<br>0.1 1 10 100 1E−4 1E−3 10E−2<br>VDS (V) TIME IN AVALANCHE (s)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>ISS<br>, (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**==> picture [236 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9 Q T<br>8<br>7<br>6<br>5<br>QGSGS QGDGD<br>4<br>3<br>2 V DS  = 20 V<br>TJ = 25 ° C<br>1 I DJ  = 35 A<br>0<br>0 5 10 15 20 25<br>QG, TOTAL GATE CHARGE (nC)G, TOTAL GATE CHARGE (nC), TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**==> picture [239 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VGS = 0 VGS = 0 V = 0 V<br>10<br>1<br>0.1 TJ = 125J = 125 = 125 ° C<br>0.01<br>TJJ = 25 25 ° C<br>0.001 T J  = −55 ° C<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)SD, SOURCE−TO−DRAIN VOLTAGE (V), SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>ISS<br>**----- End of picture text -----**<br>


**Figure 11. Safe Operating Area** 

**Figure 12. IPEAK vs. Time in Avalanche** 

**www.onsemi.com** 

**4** 

**NVMFS5C460NL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br> (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMFS5C460NLT1G|5C460L|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5C460NLWFT1G|460LWF|DFN5<br>(Pb−Free, Wettable Flanks)|1500 / Tape & Reel|
|NVMFS5C460NLT3G|5C460L|DFN5<br>(Pb−Free)|5000 / Tape & Reel|
|NVMFS5C460NLWFT3G|460LWF|DFN5<br>(Pb−Free, Wettable Flanks)|5000 / Tape & Reel|
|NVMFS5C460NLAFT1G|5C460L|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5C460NLWFAFT1G|460LWF|DFN5<br>(Pb−Free, Wettable Flanks)|1500 / Tape & Reel|
|NVMFS5C460NLWFAFT3G|460LWF|DFN5<br>(Pb−Free, Wettable Flanks)|5000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**5** 

**NVMFS5C460NL** 

## **PACKAGE DIMENSIONS** 

**==> picture [475 x 588] intentionally omitted <==**

**----- Start of picture text -----**<br>
DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>2 X ISSUE N NOTES:1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>=— A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>= — M 3.00 3.40 3.80<br>A 0  −−− 12<br>0.10 C RECOMMENDED STYLE 1:<br>SOLDERING FOOTPRINT* PIN 1. SOURCE<br>SIDE VIEW DETAIL A 2X  2. 3. SOURCESOURCE<br>0.495 4.560  4. GATE<br>2X  5. DRAIN<br>8X b 1.530<br>0.10 C A B<br>e/2<br>2X<br>0.05 c<br>L e 0.475<br>1 aE 4 P|a 3.200 n<br>4.530<br>K<br>E2 2X 1.330<br>PIN 5 M 0.905<br>(EXPOSED PAD) L1 1<br>| Te<br>0.965<br>4X<br>G D2 1.000 1.270<br>P BOTTOM VIEW a n f : 4X “ 0.750 7ao88 PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent<br>coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.<br>ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability<br>arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.<br>Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,<br>regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or<br>specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer<br>application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not<br>designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification<br>in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized<br>application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and<br>expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such<br>claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This<br>literature is subject to all applicable copyright laws and is not for resale in any manner.<br>**----- End of picture text -----**<br>


## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative 

## **LITERATURE FULFILLMENT** : 

◊ 

**www.onsemi.com** 

**NVMFS5C460NL/D** 

**6**