NVMFS5A140PLZWFT1G
Power MOSFET, P Channel, 40 V, 140 A, 0.0032 ohm, DFN, Surface Mount
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- No. of Pins: 5Pins
- Channel Type: P Channel
- Qualification: AEC-Q101
- Power Dissipation: 200W
- Transistor Mounting: Surface Mount
- Transistor Polarity: P Channel
- Power Dissipation Pd: 200W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0032ohm
- Transistor Case Style: DFN
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: 140A
- Drain Source On State Resistance: 0.0032ohm
- Automotive Qualification Standard: AEC-Q101
- Gate Source Threshold Voltage Max: 2.6V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 1.57 € |
| Current stock | 10+ |
| Lead time | 30 days |
## NVMFS5A140PLZ ## Power MOSFET, Single P-Channel ## **−40 V, −140 A, 4.2 m** ## **Features** **==> picture [491 x 418] intentionally omitted <==** **----- Start of picture text -----**<br> www.onsemi.com<br>• Small Footprint (5 x 6 mm) for Compact Design<br>• Low R to Minimize Conduction Losses<br>DS(on)<br>• NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical VDSS RDS(ON) MAX ID MAX<br>Inspection<br>−40 V 4.2 m @ −10 V −140 A<br>• AEC−Q101 Qualified and PPAP Capable<br>7.2 m @ −4.5 V<br>• i=<br>These Devices are Pb−Free and are RoHS Compliant<br>SPECIFICATION MAXIMUM RATINGS (TJ = 25 ° C unless otherwise D (5)<br>noted) (Notes 1, 2, 3) 1: Source<br>2: Source<br>Symbol Parameter Value Unit<br>a es 3: Source<br>ee VDSS es Drain to Source Voltage −40 ed V G (4) 4: Gate5: Drain<br>VGS Gate to Source Voltage ± 20 V<br>ID Continuous Drain, Steady TC = 25 ° C −140 A<br>Current R JC, State S (1,2,3)<br>(Notes 1, 3) P-CHANNEL MOSFET<br>TE é<br>TP PD Power Dissipation TC = 25 ° C 200 es W<br>R JC (Note 1)<br>ID Continuous Drain: Steady TA = 25 ° C −20 A<br>Current R JA State DFN5<br>(Notes 1, 2, 3)<br>SEH + (SO−8FL)<br>PD Power Dissipation TA = 25 ° C 3.8 W<br>R JA (Note 1, 2) MARKING DIAGRAM<br>Hp ft<br>D<br>IDP Pulsed Drain PW ≤ 10 s, −560 A<br>Current duty cycle ≤ 1% S D<br>ee S XXXXXX<br>TJ, TSTG Operating Junction and Storage Temperature −55 to ° C S AYWZZ<br>+175 G D<br>a ee ee<br>D<br>IS Source Current (Body Diode) −140 A<br>aeeseee XXXXXX = Specific Device Code —_<br>EAS Single Pulse Drain to Source Avalanche 420 mJ 5A140L(NVMFS5A140PLZ)<br>Energy (L= 1.0 mH, IL(pk) = −29 A) 140LWF(NVMFS5A140PLZWF)<br>a eee<br>TL Lead Temperature for Soldering Purposes 260 ° C A = Assembly Location<br>(1/8” from case for 10 s) Y = Year<br>eeeee W = Work Week<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>ZZ = Lot Traceability<br>**----- End of picture text -----**<br> - Small Footprint (5 x 6 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) - NVMFS5A140PLZWF: Wettable Flank Option for Enhanced Optical Inspection - AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 7 of this data sheet. ## **THERMAL CHARACTERISTICS** |**Symbol**<br>~~ee~~|**Parameter**|**Value**|**Unit**| |---|---|---|---| |R JC<br>~~ee~~|Junction to Case Steady State|0.75|°C/W| |R JA|Junction to Ambient Steady State (Note 2)|39|| 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Publication Order Number: **NVMFS5A140PLZ/D** **1** © Semiconductor Components Industries, LLC, 2017 **January, 2018 − Rev. 0** **NVMFS5A140PLZ** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRIC**|**AL CHARACTERISTICS**(TJ= 25°|C unless otherwise noted)|C unless otherwise noted)||||| |---|---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |V(BR)DSS|Drain to Source Breakdown Voltage|ID= −1 mA, VGS= 0 V||−40|||V| |IDSS|Zero Gate Voltage Drain Current|VDS= −40 V, VGS= 0 V|TJ= 25°C|||−1.0|�A| ||||TJ= 100°C<br>(Note 4)|||−100|�A| |IGSS|Gate to Source Leakage Current|VGS=±16 V, VDS= 0 V||||±10|�A| |**ON CHARACTERISTICS**(Note 5)|||||||| |VGS(th)|Gate Threshold Voltage|VDS= −10 V, ID= −1 mA||−1.2||−2.6|V| |RDS(on)|Drain to Source On Resistance|VGS= −10 V|ID= −50 A||3.2|4.2|m�| |||VGS= −4.5 V|ID= −50 A||5.0|7.2|| |gFS|Forward Transconductance|VDS= −10 V, ID= −50 A|||125||S| |**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||| |Ciss|Input Capacitance|VGS= 0 V, f = 1 MHz<br>VDS= −20 V,|||7400||pF| |Coss|Output Capacitance||||1030||| |Crss|Reverse Transfer Capacitance||||720||| |Qg(tot)|Total Gate Charge|VGS= −10 V, ID= −50 A<br>VDS= −20 V,|||136||nC| |Qgs|Gate to Source Charge||||26||| |Qgd|Gate to Drain Charge||||31||| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |td(on)|Turn-On Delay Time|VDS= −20 V, ID= −50 A,<br>VGS= −10 V, RG= 50�|||50||ns| |tr|Rise Time||||860||| |td(off)|Turn-Off Delay Time||||540||| |tf|Fall Time||||740||| |**DRAIN-SOURCE DIODE CHARACTERISTICS**|||||||| |VSD|Forward Diode Voltage|VGS= 0 V, IS= −50 A|||−0.83|−1.5|V| |trr|Reverse Recovery Time|VGS= 0 V, IS= −50 A<br>di/dt = 100 A/�s|||108||ns| |Qrr|Reverse Recovery Charge||||236||nC| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 100 ° C. Product is not tested to this condition in production. 5. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2 %. 6. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NVMFS5A140PLZ** ## **TYPICAL CHARACTERISTICS** **==> picture [192 x 156] intentionally omitted <==** **==> picture [192 x 156] intentionally omitted <==** **Figure 1. ID − VDS** **Figure 2. ID − VGS** **==> picture [200 x 156] intentionally omitted <==** **Figure 3. RDS(on) − VGS** **==> picture [200 x 156] intentionally omitted <==** **Figure 4. RDS(on) − TJ** **==> picture [192 x 157] intentionally omitted <==** **Figure 5. IS − VSD** **==> picture [190 x 157] intentionally omitted <==** **Figure 6. SW Time − ID** **www.onsemi.com** **3** **NVMFS5A140PLZ** ## **TYPICAL CHARACTERISTICS** **==> picture [212 x 175] intentionally omitted <==** **Figure 7. Ciss, Coss, Crss − VDS** **==> picture [218 x 175] intentionally omitted <==** **Figure 9. SOA** **==> picture [218 x 175] intentionally omitted <==** **Figure 8. VGS − Qg** **==> picture [213 x 175] intentionally omitted <==** **Figure 10. IPEAK − TAV** **==> picture [209 x 172] intentionally omitted <==** **Figure 11. PD − TC** **www.onsemi.com** **4** **NVMFS5A140PLZ** ## **TYPICAL CHARACTERISTICS** **==> picture [474 x 175] intentionally omitted <==** **Figure 12. R** � **JA − Pulse Time** **www.onsemi.com** **5** **NVMFS5A140PLZ** **DFN5 5x6, 1.27P (SO−8FL)** CASE 488AA ISSUE M |||||||**2 X**|**2 X**|**2 X**|**2 X**|**2 X**|NOT<br>|ES:<br>|||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||C|**D1**<br>**D**<br>**2**||1. <br>2. <br>3. <br>**E1**<br>**�**<br>**E**<br>**2**<br>**B**<br>~~**A**~~<br>0.20<br>C<br>0.20<br>C<br>**2 X**<br>**A**<br>**DETAIL A**<br>**DETAIL A**<br>**A1**<br>**c**<br>**4 X**<br>**C**<br>**SEATING**<br>**PLANE**||||||DIME<br>ASME<br> CONT<br> DIMEN<br>MOLD<br>BURR|SIONING AND TOLERANC<br>Y14.5M, 1994.<br>ROLLING DIMENSION: MIL<br>SION D1 AND E1 DO NOT<br>FLASH PROTRUSIONS OR<br>S.||| |||||||||0.20||C||**DIM**|**MILLIMETERS**||| ||||||||||||||**MIN**|**NOM**|**MAX**| |||||||**E1**<br>**E**<br>**2**<br>**A**<br>**DETAIL A**<br>**c**||||||**A**<br>**A1**|0.90<br>0.00|1.00<br>−−−|1.10<br>0.05| |||||||||||||**b**|0.33|0.41|0.51| |||||||||||||**c**|0.23|0.28|0.33| |||||||||||||**D**|5.00|5.15|5.30| |||||||||||||**D1**<br>|4.70<br>|4.90<br>|5.10<br>| |||||||||||||**D2**<br>**E**<br>**E1**|3.80<br>5.70<br>6.00|4.00<br>6.15<br>5.90|4.20<br>6.10<br>6.30| |||||**1**<br>**2**<br>**3**<br>**4**<br>**TOP VIEW**||||||||**E2**|3.45|3.65|3.85| |||||||||||||**e**|1.27 BSC||| |||||||||||||**G**|0.51|0.575|0.71| |||||||||||||**K**|1.20|1.35|1.50| |||||||||||||**L**|0.51|0.575|0.71| ||0.10||C|||||||||**L1**|0.125 REF||| |||||||||||||**M**|3.00|3.40|3.80| |||||||||||||**�**|0<br>�|−−−|12�| ||0.10||C|**SIDE VIEW**|||||||||||| ||||||||||||||||| ||||||||||||||||| - NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. - 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. ## **RECOMMENDED** **==> picture [162 x 146] intentionally omitted <==** **----- Start of picture text -----**<br> 8X b<br>0.10 C A B<br>e/2<br>0.05 c<br>L e<br>1 4<br>K<br>E2<br>PIN 5 M<br>(EXPOSED PAD) L1<br>G D2<br>BOTTOM VIEW<br>**----- End of picture text -----**<br> **==> picture [51 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1:<br>PIN 1. SOURCE<br> 2. SOURCE<br> 3. SOURCE<br> 4. GATE<br> 5. DRAIN<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [203 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>0.495 4.560<br>2X<br>1.530<br>3.200<br>4.530<br>2X 1.330<br>0.905<br>1<br>0.965<br>4X<br>1.000 1.270<br>4X 0.750 PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> **www.onsemi.com** **6** **NVMFS5A140PLZ** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Marking**|**Package**|**Shipping (Qty / Packing)**†| |NVMFS5A140PLZT1G|5A140L|DFN5 5x6, 1.27P (SO−8FL) (Pb-Free)|1.500 / Tape & Reel| |NVMFS5A140PLZWFT1G|140LWF|DFN5 5x6, 1.27P (SO−8FL)<br>(Pb-Free / Wettable Flanks)|1.500 / Tape & Reel| |NVMFS5A140PLZT3G|5A140L|DFN5 5x6, 1.27P (SO−8FL) (Pb-Free)|5.000 / Tape & Reel| |NVMFS5A140PLZWFT3G|140LWF|DFN5 5x6, 1.27P (SO−8FL)<br>(Pb-Free / Wettable Flanks)|5.000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 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Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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