NVMFS5844NLT1G

## NTMFS5844NL, NVMFS5844NL 

## MOSFET – Power, Single, N-Channel 60 V, 61 A, 12 m 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

## **http://onsemi.com** 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver LossesG and Capacitance to Minimize Driver Losses and Capacitance to Minimize Driver Losses 

 Low QG and Capacitance to Minimize Driver LossesG and Capacitance to Minimize Driver Losses and Capacitance to Minimize Driver Losses **V(BR)DSS RDS(ON) MAX ID MAX** • NVMFS5844NLWF − Wettable Flanks Product 12 m @ 10 V • NVMFS Prefix for Automotive and Other Applications Requiring 60 V 16 m @ 4.5 V 61 A ~~Pe~~ Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant D (5) **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) ~~ee~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 60 V G (4) Gate−to−Source Voltage VGS 20 V ~~———~~ Continuous Drain Cur-rent R2, 3, 4) J−mb[ (Notes 1,] Steady TTmbmb = 100 = 25 °° CC ID ~~Fe~~ 6143 A **N−CHANNEL MOSFET** ~~Gh~~ S (1,2,3) Power Dissipation State Tmb = 25 ° C PD 107 W ~~——|~~ R J−mb[ (Notes 1, 2, 3)] ~~AW~~ Tmb ~~Es~~ = 100 ° C 54 **MARKING** Continuous Drain CurTA = 25 ° C ID 11.2 A **DIAGRAM** rent R4) JA (Notes 1, 3, Steady TA = 100 ° C 8.0 D Power Dissipation State TA = 25 ° C PD 3.7 W **DFN5** 1 SS XXXXXX D R JA (Notes 1 & 3) TA = 100 ° C 1.8 **(SO−8FL)** S AYWZZ ~~| (oedar.~~ = _ ~~ES~~ Pulsed Drain Current ~~Nes~~ TA = 25 ° C, t ~~oes~~ p = 10 s IDM ~~es~~ 247 A **CASE 488AA** G D ~~rn~~ Current Limited by Package ~~CA Laer~~ TA = 25 ° C IDmaxPkg ~~a ae~~ 80 A **STYLE 1** D : (Note 4) A = Assembly Location ~~Pr~~ Operating Junction and Storage Temperature ~~Aca[oron]~~ TJ, Tstg −55 to ° C Y = Year 175 W = Work Week ~~PS~~ Source Current (Body Diode) IS 60 A ZZ = Lot Traceability ~~ee PS[a] ae eeeee~~ Single Pulse Drain−to−Source Avalanche EAS 48 mJ Energy (TJ = 25 ° C, VDD = 50 V, VGS = 10 V, ~~pe~~ IL(pk) = 31 A, L = 0.1 mH, RG = 25 ) **ORDERING INFORMATION** Lead Temperature for Soldering Purposes TL 260 ° C See detailed ordering, marking and shipping information in the (1/8 ″ from case for 10 s) package dimensions section on page 5 of this data sheet. ~~eeee eee~~ Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|
|Junction−to−Mounting Board (top) − Steady<br>State (Notes 2, 3)|R<br>J−mb|1.4|°C/W|
|Junction−to−Ambient − SteadyState(Note 3)|R JA|41||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Psi ( ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 

Publication Order Number: **NTMFS5844NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **May, 2024 − Rev. 6** 

## **NTMFS5844NL, NVMFS5844NL** 

3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

- **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||57||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.5||2.3|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||6.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 10 A||10.2|12|m�|
|||VGS= 4.5 V|ID= 10 A||13|16||
|Forward Transconductance|gFS|VDS= 5 V, ID|= 10 A||27||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 25 V|||1460||pF|
|Output Capacitance|COSS||||150|||
|Reverse Transfer Capacitance|CRSS||||96|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 48 V; ID= 10 A|||30||nC|
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 48 V; ID= 10 A|||15|||
|Threshold Gate Charge|QG(TH)||||1.0|||
|Gate−to−Source Charge|QGS||||4.0|||
|Gate−to−Drain Charge|QGD||||8.0|||
|Plateau Voltage|VGP||||3.0||V|
|Gate Resistance|RG||||0.62||�|
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 48 V,<br>ID= 10 A, RG= 2.5�|||12||ns|
|Rise Time|tr||||25|||
|Turn−Off Delay Time|td(OFF)||||20|||
|Fall Time|tf||||10|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.79|1.2|V|
||||TJ= 125°C||0.65|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 10 A|||19||ns|
|Charge Time|ta||||13|||
|Discharge Time|tb||||6.0|||
|Reverse Recovery Charge|QRR||||15||nC|



5. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTMFS5844NL, NVMFS5844NL** 

## **TYPICAL CHARACTERISTICS** 

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80 80<br>70 10 V VGS = 5 V 4.0 V T J  = 25 ° C 70 VDS ≥  10 V<br>60 3.8 V 60<br>50 50<br>3.6 V<br>40 40<br>3.4 V<br>30 30<br>20 3.2 V 20 T J  = 25 ° C<br>10 3.0 V 10 TJ = 125 ° C TJ = −55 ° C<br>0 2.8 V 0<br>0 1 2 3 4 5 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.030 0.016<br>I D  = 10 A<br>0.025 TJ = 25 ° C TJ = 25 ° C<br>0.014 VGS = 4.5 V<br>0.020<br>0.012<br>0.015<br>VGS = 10 V<br>0.010<br>0.010<br>0.005 0.008<br>2 4 6 8 10 12 5 10 15 20 25 30 35 40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.5 100,000<br>VGS = 10 V VGS = 0 V<br>ID = 10 A<br>2<br>10,000<br>TJ = 150 ° C<br>1.5<br>1,000 TJ = 125 ° C<br>1<br>0.5 100<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>IDSS<br>, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTMFS5844NL, NVMFS5844NL** 

## **TYPICAL CHARACTERISTICS** 

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1800 10<br>1600 VGS = 0 V QT<br>TJ = 25 ° C<br>8<br>1400<br>Ciss<br>1200<br>6<br>1000<br>800<br>4<br>600 Qgd<br>Q gs<br>400 Coss 2 VDS = 48 V<br>200 ID = 10 A<br>0 Crss 0 TJ = 25 ° C<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>1000 40<br>VDD = 48 V VGS = 0 V<br>VIDGS = 10 A = 4.5 V TJ = 25 ° C<br>30<br>100<br>td(off)<br>tf 20<br>tr<br>td(on)<br>10<br>10<br>1 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 50<br>VGS = 10 V<br>Single Pulse<br>100 TC = 25 ° C 40<br>100  � s 10  � s<br>30<br>1 ms<br>10<br>20<br>10 ms<br>1<br>RDS(on) Limit 10<br>dc<br>Thermal Limit<br>Package Limit<br>0.1 0<br>0.1 1 10 100 25 50 75 100 125 150 175<br>VDS, DRAISN VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.<br>Safe Operating Area Starting Junction Temperature<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


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**4** 

## **NTMFS5844NL, NVMFS5844NL** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100<br>Duty Cycle = 0.5<br>0.2<br>10<br>0.1<br>0.05<br>1<br>0.02<br>0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 13. Thermal Response<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JA(t)<br>�<br>R<br>**----- End of picture text -----**<br>


|**DEVICE ORDERING INFORMATION**|**DEVICE ORDERING INFORMATION**|||
|---|---|---|---|
|**Device**|**Marking**|**Package**|**Shipping**†|
|NTMFS5844NLT1G|5844NL|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLT1G|V5844L|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLWFT1G|5844LW|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5844NLT3G|V5844L|DFN5<br>(Pb−Free)|5000 / Tape & Reel|
|NVMFS5844NLWFT3G|5844LW|DFN5<br>(Pb−Free)|5000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>1 ISSUE N<br>SCALE 2:1 DATE 25 JUN 2018<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>� c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>A � 0   � −−− 12    �<br>0.10 C GENERIC<br>SIDE VIEW MARKING DIAGRAM*<br>DETAIL A<br>1<br>8X b XXXXXX<br>0.10 C A B e/2 AYWZZ<br>0.05 c<br>L e<br>1 4 XXXXXX = Specific Device Code<br>K A = Assembly Location<br>Y = Year<br>RECOMMENDED W = Work Week<br>E2 SOLDERING FOOTPRINT* ZZ = Lot Traceability<br>(EXPOSED PAD)PIN 5 L1 M 0.4952X 4.560 *This information is generic. Please refer to<br>2X device data sheet for actual part marking.<br>1.530 Pb−Free indicator, “G” or microdot “  � ”,<br>may or may not be present. Some products<br>G D2 2X may not follow the Generic Marking.<br>BOTTOM VIEW 0.475<br>3.200<br>4.530<br>STYLE 1: STYLE 2: 2X 1.330<br>PIN 1. 2. SOURCESOURCE PIN 1. 2. ANODEANODE 0.905<br> 3. SOURCE  3. ANODE 1<br> 4. GATE  4. NO CONNECT<br> 5. DRAIN  5. CATHODE 0.965<br>4X<br>1.000 1.270<br>4X 0.750 PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the  onsemi  Soldering and Mounting<br>Techniques Reference Manual, SOLDERRM/D.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON14036D Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: DFN5 5x6, 1.27P (SO−8FL) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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