NVMFS5113PLT1G

## NVMFS5113PL 

## Power MOSFET 

## **−60 V, 14 m −64 A, Single P−Channel** 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

- High Current Capability 

- Avalanche Energy Specified 

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- NVMFS5113PLWF − Wettable Flanks Product 

- NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

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V(BR)DSS RDS(on) ID<br>14 m  @ −10 V<br>−60 V −64 A<br>22 m  @ −4.5 V<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

S (1, 2, 3) **Parameter Symbol Value Unit** ~~ee | |~~ Drain−to−Source Voltage VDSS −60 V G (4) Gate−to−Source Voltage VGS 20 V **P−Channel** Continuous Drain CurTC = 25 ° C ID −64 A ~~re~~ rent R JC (Notes 1, 2, 3) Steady TC = 100 ° C −45 “e ~~h~~ D (5, 6) Power Dissipation R JC State TC = 25 ° C PD 150 W (Notes 1, 2) TC = 100 ° C 75 **MARKING** Continuous Drain CurTA = 25 ° C ID −10 A **DIAGRAM** rent R JA (Notes 1, 2, 3) Steady TA = 100 ° C −7 D ~~—i=eee=a~~ Power Dissipation R(Notes 1, 2) JA State TTAA = 100 = 25 °° CC PD 3.81.9 W ~~;~~ **DFN5** 1 SSS XXXXXXAYWZZ D Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM −415 A **CASE 488AA** G D Operating Junction and Storage Temperature TJ, Tstg −55 to ° C **STYLE 1** D 175 ~~PEED~~ A = Assembly Location Source Current (Body Diode) IS −150 A Y = Year W = Work Week Single Pulse Drain−to−Source Avalanche Energy (TJ = 25 ° C, VDD = 50 V, VGS = 10 V, EAS 315 mJ ZZ = Lot Traceability ~~es~~ IL(pk) = 46 A, L = 0.3 mH, RG = 25 ) Lead Temperature for Soldering Purposes TL 260 ° C ″ **ORDERING INFORMATION** (1/8 from case for 10 s) ~~p>Poft |~~ See detailed ordering, marking and shipping information on Stresses exceeding those listed in the Maximum Ratings table may damage the page 5 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit** Junction−to−Case − Steady State (Drain) R JC 1.0 ° C/W ~~$F~~ (Note 2) Junction−to−Ambient − Steady State (Note 2) ~~tf~~ R JA 39 ° C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

See detailed ordering, marking and shipping information on page 5 of this data sheet. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Continuous DC current rating. Maximum current for pulses as long as 

   - 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVMFS5113PL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **November, 2015 − Rev. 3** 

## **NVMFS5113PL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|−250�A|−60|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −60 V|TJ= 25°C|||−1.0|�A|
||||TJ= 125°C|||−100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�20 V||||�100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−1.5||−2.5|V|
|Drain−to−Source On Resistance|RDS(on)|VGS= −10 V, ID= −17 A|||10.5|14|m�|
|||VGS= −4.5 V, ID= −5 A|||16|22||
|Froward Transconductance|gFS|VDS= −15 V, ID= −15 A|||43||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= −25 V|||4400||pF|
|Output Capacitance|Coss||||505|||
|Reverse Transfer Capacitance|Crss||||319|||
|Total Gate Charge|QG(TOT)|VDS= −48 V,<br>ID= −17 A|VGS= −4.5 V||45||nC|
||||VGS= −10 V||83|||
|Threshold Gate Charge|QG(TH)|VGS= −10 V, VDS= −48 V,<br>ID= −17 A|||4|||
|Gate−to−Source Charge|QGS||||13|||
|Gate−to−Drain Charge|QGD||||27|||
|Plateau Voltage|VGP||||3.5||V|
|**SWITCHING CHARACTERISTICS**(Notes 4)||||||||
|Turn−On Delay Time|td(on)|VGS= −10 V, VDS= −48 V,<br>ID= −17 A, RG= 2.5�|||15||ns|
|Rise Time|tr||||37|||
|Turn−Off Delay Time|td(off)||||54|||
|Fall Time|tf||||77|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −17 A|TJ= 25°C||−0.79|−1.0|V|
||||TJ= 125°C||−0.65|||
|Reverse Recovery Time|tRR|VGS= 0 V, dls/dt = 100 A/�s,<br>Is= −17 A|||41||ns|
|Charge Time|ta||||22|||
|Discharge Time|tb||||19|||
|Reverse Recovery Charge|QRR||||50||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

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**2** 

**NVMFS5113PL** 

## **TYPICAL CHARACTERISTICS** 

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60.0 120.0<br>TJ = 25 ° C 110.0 VDS = −10 V<br>50.0 100.0<br>−6 V to −10 V 90.0<br>40.0 −4.0 V 80.0<br>70.0<br>30.0 60.0<br>50.0<br>20.0 −3.6 V 40.0 TJ = 25 ° C<br>30.0<br>10.0 20.0<br>−3.2 V 10.0 TJ = 125 ° C TJ = −55 ° C<br>0.0 VGS = −2.8 V 0.0<br>0.0 1.0 2.0 3.0 4.0 5.0 1 2 3 4 5 6<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.020 0.050<br>ID = −17 A TJ = 25 ° C<br>TJ = 25 ° C 0.045<br>0.018<br>0.040<br>0.035<br>0.016<br>0.030<br>VGS = −4.5 V<br>0.014<br>0.025<br>0.020<br>0.012<br>0.015<br>VGS = −10 V<br>0.010 0.010<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 0 10 20 30 40 50 60 70 80 90 100<br>−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.10 100000<br>2.00 V GS  = −10 V VGS = 0 V<br>1.90 I D  = −17 A<br>1.80 TJ = 150 ° C<br>1.70<br>1.60 10000<br>1.50<br>1.40 TJ = 125 ° C<br>1.30<br>1.20<br>1.10 1000<br>1.00<br>0.90<br>0.80<br>0.70<br>0.60 100<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>−I −I<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>DSS<br>−I<br>, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NVMFS5113PL** 

## **TYPICAL CHARACTERISTICS** 

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6000 10.0<br>VGS = 0 V 9.0 QT<br>5000 Ciss TJ = 25 ° C<br>f = 1 MHz 8.0<br>7.0<br>4000<br>6.0<br>3000 5.0 Qgs<br>Q gd<br>4.0<br>2000<br>3.0<br>1000 Coss 2.0 VDS = −48 A<br>1.0 ID = −17 A<br>0 Crss 0.0 TJ = 25 ° C<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>1000.0 120<br>ttd(off)f 110100 VTJGS = 25 = 0 V ° C<br>tr 90<br>100.0 80<br>td(on)<br>70<br>60<br>50<br>10.0 40<br>30<br>VDD = −48 V 20<br>VGS = −10 V 10<br>1.0 ID = −17 A 0<br>1 10 100 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.901.00<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 100<br>VGS ≤  −10 V 100  � s 10  � s<br>Single Pulse<br>100 TC = 25 ° C 10 ms 1 ms TJ(initial) = 25 ° C<br>10<br>dc 10 TJ(initial) = 125 ° C<br>1<br>0.1 RDS(on) Limit<br>Thermal Limit<br>0.01 Package Limit 1<br>0.1 1 10 100 1.00E−05 1.00E−04 1.00E−03 1.00E−02<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>S<br>−I<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)<br>D<br>−I IPEAK<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Avalanche Characteristics** 

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**4** 

**NVMFS5113PL** 

## **TYPICAL CHARACTERISTICS** 

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100<br>Duty Cycle = 0.5<br>10 0.2<br>0.1<br>0.05<br>1 0.02<br>0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JA(t)<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMFS5113PLT1G|V5113L|DFN5<br>(Pb−Free)|1500 / Tape & Reel|
|NVMFS5113PLWFT1G|5113LW|DFN5<br>(Pb−Free)|1500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NVMFS5113PL** 

## **PACKAGE DIMENSIONS** 

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DFN5 5x6, 1.27P<br>(SO−8FL)<br>CASE 488AA<br>ISSUE M<br>2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fet —= A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>M 3.00 3.40 3.80<br>~. | A —— 0  −−− 12<br>0.10 C RECOMMENDED STYLE 1:PIN 1. SOURCE<br>ada SIDE VIEW | DETAIL A 2X SOLDERING FOOTPRINT* ==  2. 3. SOURCESOURCE<br>0.495 4.560  4. GATE<br> 5. DRAIN<br>8X b 2X<br>0.10 C A B 1.530<br>e/2<br>0.05 c<br>L e<br>1 4<br>3.200<br>K 4.530<br>= Pe<br>PIN 5 E2 M 2X 1.330<br>(EXPOSED PAD) L1 0.905<br>f oo 4 1<br>0.965<br>G rot D2 ~ 4X p aln g<br>1.000 1.270<br>BOTTOM VIEW<br>4X 0.750 aaa PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NVMFS5113PL/D** 

**6**