NVMFS4C310NT1G

## NVMFS4C310N 

## Power MOSFET **30 V, 51 A, Single N−Channel, SO−8 FL** 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

- Optimized Gate Charge to Minimize Switching Losses 

- NVMFS4C310NWF − Wettable Flanks Option for Enhanced Optical Inspection 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) ~~ee~~ **Parameter Symbol** ~~es~~ **Value Unit** Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ± 20 V ~~a~~ Continuous Drain TA = 25 ° C 17 A Current R(Notes 1, 2 and 4)JA TA = 100 ° C ID 12 ~~ee~~ Power Dissipation ~~ee~~ TA = 25 ° C ~~eee~~ 3.5 W R JA (Notes 1, 2 PD and 4) Continuous Drain SteadyState TC = 25 ° C 51 ~~|)~~ Current R(Notes 1, 2, 3JC ~~err~~ TC = 100 ° C ID 36 A and 4) Power Dissipation TC = 25 ° C PD 32 W ~~eo}~~ R JC (Notes  1, 2, 3 ~~eS~~ and 4) ~~ef |~~ Pulsed Drain TA = 25 ° C, tp = 10 s IDM 132 A Current ~~ee~~ Operating Junction and Storage TJ, −55 to ° C Temperature TSTG +175 ~~ee~~ Source Current (Body Diode) IS 21 A ~~eeee ee~~ Single Pulse Drain−to−Source Avalanche EAS 31 mJ Energy (IL = 25 Apk) (Note 3) ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~TTT~~ 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using 650 mm[2] , 2 oz Cu pad. 

3. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 

4. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

**Parameter Symbol Value Unit** Junction−to−Case (Drain) R JC 4.7 Junction−to−Ambient – R JA 43 ° C/W Steady State (Note 5) ~~eea~~ 5. Surface−mounted on FR4 board using 650 mm[2] , 2 oz Cu pad. 

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ee V(BR)DSS RDS(ON) ee  MAX ID MAX ee<br>6.0 m  @ 10 V<br>30 V 51 A<br>9.0 m  @ 4.5 V<br>D (5−8)<br>G (4)<br>S (1,2,3)<br>N−CHANNEL MOSFET<br>MARKING<br>DIAGRAM<br>D<br>mm 1 S D<br>S XXXXXX<br>SO−8 FLAT LEAD S AYWZZ<br>CASE 488AA<br>G D<br>STYLE 1<br>D<br>i<br>4C10N = Specific Device Code for<br>NVMFS4C310N<br>4C10WF= Specific Device Code of<br>NVMFS4C310NWF<br>A = Assembly Location<br>Y = Year<br>W = Work Week<br>ZZ = Lot Traceabililty<br>ORDERING INFORMATION<br>Device Package Shipping [†]<br>NVMFS4C310NT1G SO−8 FL 1500 /<br>(Pb−Free) Tape & Reel<br>NVMFS4C310NWFT1G SO−8 FL 1500 /<br>(Pb−Free) Tape & Reel<br>=a<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.<br>**----- End of picture text -----**<br>


Publication Order Number: **NVMFS4C310N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2015 **August, 2017 − Rev. 0** 

## **NVMFS4C310N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|30|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||14.5||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 6)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.3||2.2|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||4.7||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||5.0|6.0|m�|
|||VGS= 4.5 V|ID= 30 A||7.5|9.0||
|Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||43||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||1000||pF|
|Output Capacitance|COSS||||580|||
|Reverse Transfer Capacitance|CRSS||||160|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||9.7||nC|
|Threshold Gate Charge|QG(TH)||||1.5|||
|Gate−to−Source Charge|QGS||||2.8|||
|Gate−to−Drain Charge|QGD||||4.8|||
|Gate Plateau Voltage|VGP||||3.2||V|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||18.6||nC|
|**SWITCHING CHARACTERISTICS**(Note 7)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||9.0||ns|
|Rise Time|tr||||34|||
|Turn−Off Delay Time|td(OFF)||||14|||
|Fall Time|tf||||7.0|||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||7.0||ns|
|Rise Time|tr||||26|||
|Turn−Off Delay Time|td(OFF)||||18|||
|Fall Time|tf||||4.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.80|1.1|V|
||||TJ= 125°C||0.67|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 30 A|||26.7||ns|
|Charge Time|ta||||14.1|||
|Discharge Time|tb||||12.6|||
|Reverse Recovery Charge|QRR||||13.7||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

7. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NVMFS4C310N** 

## **TYPICAL CHARACTERISTICS** 

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65 80<br>60 4.0 V T J  = 25 ° C 3.8 V VDS = 5 VDS = 5 V = 5 V<br>4.2 V to 10 V 70<br>55<br>3.6 V<br>50 60<br>45<br>3.4 V<br>40 50<br>35<br>3.2 V 40<br>30<br>25 3.0 V 30<br>20 TJ = 125J = 125 = 125 ° C<br>20<br>1510 2.8 V TJ = 25J = 25 = 25 ° C<br>10<br>5 2.6 V TJ = −55J = −55 = −55 ° C<br>0 0<br>0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.020 0.020<br>0.018 ID = 30 A 0.018 T J  = 25 ° C<br>0.016 0.016<br>0.014 0.014<br>0.012 0.012<br>0.010 0.010<br>VGS = 4.5 V<br>0.008 0.008<br>0.006 0.006 V GS  = 10 V<br>0.004 0.004<br>0.002 0.002<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.7 10000<br>1.6 VI D GS= 30 A = 10 V VGS = 0 V TJ = 150 ° C<br>1.5<br>1.4<br>1000 TJ = 125 ° C<br>1.3<br>1.2<br>1.1<br>1.0 100 TJ = 85 ° C<br>0.9<br>0.8<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID IDD<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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80<br>VDS = 5 VDS = 5 V = 5 V<br>70<br>60<br>50<br>40<br>30<br>TJ = 125J = 125 = 125 ° C<br>20<br>TJ = 25J = 25 = 25 ° C<br>10<br>TJ = −55J = −55 = −55 ° C<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VGS, GATE−TO−SOURCE VOLTAGE (V)GS, GATE−TO−SOURCE VOLTAGE (V), GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>IDD<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

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Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


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**NVMFS4C310N** 

## **TYPICAL CHARACTERISTICS** 

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1200 10<br>VGS = 0 V 9 QT<br>1000 Ciss T J  = 25 ° C<br>8<br>7<br>800<br>6<br>Coss<br>600 5<br>4 Qgs Q gd<br>400<br>3 TJ = 25 ° C<br>200 Crss 2 VDD = 15 V<br>1 VGS = 10 V<br>ID = 30 A<br>0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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1000<br>VDD = 15 V<br>ID = 15 A<br>VGS = 10 V<br>td(on)<br>100<br>tr<br>t d(off)<br>tf<br>10<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>Figure 9. Resistive Switching Time Variation<br>vs. Gate Resistance<br>100<br>Duty Cycle = 50%<br>20%<br>10<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>t, TIME (ns)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 10. Thermal Response** 

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**4** 

**NVMFS4C310N** 

## **PACKAGE DIMENSIONS** 

**DFN5 5x6, 1.27P (SO−8FL)** CASE 488AA ISSUE M 

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2 X NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>0.20 C ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>D < A a 3. DIMENSION D1 AND E1 DO NOT INCLUDE<br>MOLD FLASH PROTRUSIONS OR GATE<br>2 B 2 X BURRS.<br>D1 MILLIMETERS<br>0.20 C<br>DIM MIN NOM MAX<br>fet —= A 0.90 1.00 1.10<br>A1 0.00 −−− 0.05<br>E1 4 X b 0.33 0.41 0.51<br>c 0.23 0.28 0.33<br>E D 5.00 5.15 5.30<br>2 D1 4.70 4.90 5.10<br>c D2 3.80 4.00 4.20<br>A1 E 6.00 6.15 6.30<br>E1 5.70 5.90 6.10<br>1 2 3 4 E2 3.45 3.65 3.85<br>e 1.27 BSC<br>TOP VIEW G 0.51 0.575 0.71<br>C K 1.20 1.35 1.50<br>SEATING L 0.51 0.575 0.71<br>0.10 C DETAIL A PLANE L1 0.125 REF<br>= | —— M 3.00 3.40 3.80<br>A STYLE 1: 0  −−− 12<br>PIN 1. SOURCE<br>0.10 C  2. SOURCE RECOMMENDED<br> 3. SOURCE<br>ala SIDE VIEW  4. GATE SOLDERING FOOTPRINT* ==<br>DETAIL A  5. DRAIN 2X<br>0.495 4.560<br>8X b 2X<br>0.10 C A B 1.530<br>e/2<br>0.05 c<br>L e<br>1 4<br>3.200<br>K 4.530<br>i a “ 5 Pe<br>E2 1.330<br>PIN 5 M 2X<br>(EXPOSED PAD) L1 0.905<br>1<br>a to<br>0.965<br>G D2 4X<br>1.000 1.270<br>BOTTOM VIEW<br>oa 4X “ 0.750 ACES PITCH<br>DIMENSIONS: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent<br>coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.<br>ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability<br>arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.<br>Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,<br>regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or<br>specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer<br>application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not<br>designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification<br>in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized<br>application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and<br>expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such<br>claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This<br>literature is subject to all applicable copyright laws and is not for resale in any manner.<br>**----- End of picture text -----**<br>


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**NVMFS4C310N/D** 

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