NVMFD5C470NWFT1G

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## MOSFET ~~SS~~ – Power, Dual **-** N Channel 

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V(BR)DSS RDS(ON) MAX ID MAX<br>40 V 11.7 m  @ 10 V 36 A<br>ee e ee<br>**----- End of picture text -----**<br>


## 40 V, 11.7 m 36 A 

## NVMFD5C470N 

## **Features** 

- Small Footprint (5x6 mm) for Compact Design 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

- NVMFD5C470NWF − Wettable Flank Option for Enhanced Optical Inspection 

- AEC-Q101 Qualified and PPAP Capable 

- These Devices are Pb-Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**|**Parameter**|**Parameter**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|---|---|
|Drain-to-Source Voltage|||VDSS|40|V|
|Gate-to-Source Voltage<br>~~EE~~|||VGS<br>~~EE~~|±20<br>~~EE~~|V<br>~~EE~~|
|Continuous Drain<br>Current R JC<br>(Notes 1, 2, 3)<br>~~EE~~<br>~~——s=8~~<br>~~Pe~~|Steady<br>State<br>~~EE~~<br>~~——s=8~~<br>|TC= 25°C<br>~~EE~~<br>~~——s=8~~|ID<br>~~EE~~<br>~~——s=8~~<br>~~—~~|36<br>~~EE~~<br>~~——s=8~~|A<br>~~EE~~<br>~~——s=8~~<br>~~—~~|
|||TC= 100°C<br>~~——s=8~~<br>~~—~~||25<br>~~——s=8~~<br>~~—~~||
|Power Dissipation<br>R JC(Notes 1, 2)<br>~~——s=8~~<br>~~Pe~~||TC= 25°C<br>~~——s=8~~<br>~~—~~|PD<br>~~——s=8~~<br>~~—~~|28<br>~~——s=8~~<br>~~—~~|W<br>~~——s=8~~<br>~~—~~|
|||TC= 100°C<br>~~——s=8~~<br>~~—~~||14<br>~~——s=8~~<br>~~—~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br>~~Pe ~~<br>~~|~~<br>~~a ee~~|Steady<br>State<br> <br>~~|~~<br>~~ee ee~~<br>~~ee~~|TA= 25°C<br>~~—~~<br>~~|~~|ID<br>~~—~~<br>~~|~~<br>~~ee~~|11.7<br>~~—~~<br>~~|~~|A<br>~~—~~<br>~~|~~<br>~~ee~~|
|||TA= 100°C<br> ~~—~~<br>~~|~~<br>~~ee~~||8.3<br>~~—~~<br>~~|~~<br>~~ee~~||
|Power Dissipation<br>R JA(Notes 1 & 2)<br>~~|~~<br>~~a ee~~||TA= 25°C<br>~~|~~<br>~~ee~~|PD<br>~~|~~<br>~~ee~~|3.1<br>~~|~~<br>~~ee~~|W<br>~~|~~<br>~~ee~~|
|||TA= 100°C<br>~~|~~<br>~~ee~~<br>~~ee~~||1.5<br>~~|~~<br>~~ee~~||
|Pulsed Drain Current<br>~~a ee~~<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~ee ee~~<br>~~ee~~<br>~~ee~~||IDM<br>~~ee~~<br>~~ee~~|108<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~|
|Operating Junction and Storage Temperature<br>~~ee~~<br>~~Po~~|||TJ, Tstg<br>~~Po~~<br>~~ee~~|−55 to<br>+ 175<br>~~Po~~<br>~~es~~|°C<br>~~Po~~|
|Source Current (Body Diode)<br>~~ee~~|||IS<br>~~ee~~<br>~~ee~~|23<br>~~ee~~<br>~~es~~|A<br>~~ee~~|
|Single Pulse Drain-to-Source Avalanche<br>Energy (TJ= 25°C, IL(pk)= 2 A)<br>~~Pe~~|||EAS<br>~~ee ~~<br>~~Pe~~<br>~~es~~|49<br> ~~es~~<br>~~Pe~~|mJ<br>~~Pe~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~es~~|||TL<br>~~es~~<br>~~es~~|260<br>~~es~~|°C<br>~~es~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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Dual N-Channel<br>D1 D2<br>G1 G2<br>S1 S2<br>MARKING<br>DIAGRAM<br>D1 D1<br>S1 D1<br>1<br>G1 XXXXXX D1<br>DFN8 5x6<br>S2 AYWZZ D2<br>(SO8FL)<br>G2 D2<br>CASE 506BT<br>D2 D2<br>**----- End of picture text -----**<br>


XXXXXX = 5C470N (NVMFD5C470N) = or 470NWF (NVMFD5C470NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 

## **ORDERING INFORMATION** 

See detailed ordering, marking and shipping information on page 5 of this data sheet. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

||~~Ge~~|~~ee~~||
|---|---|---|---|
|**Parameter**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~Ge~~|**Value**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~|
|Junction-to-Case − Steady State|R JC<br>~~Ge~~|5.3<br>~~ee~~|°C/W|
|Junction-to-Ambient − Steady State (Note 2)|R JA|49||



1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface-mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVMFD5C470N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2017 **August, 2025 − Rev. 2** 

## **NVMFD5C470N** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise specified)|**ELECTRICAL CHARACTERISTICS**(TJ = 25J = 25= 25°C unless otherwise specified)|
|---|---|---|---|---|
|**Parameter**<br>**Symbol**<br>**Test Condition**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**OFF CHARACTERISTICS**<br>~~Po~~|||||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250 A|40|V|
|Drain-to-Source Breakdown Voltage<br>Temperature Coefficient<br>~~a~~|V(BR)DSS/<br>TJ||24|mV/°C|
|Zero Gate Voltage Drain Current<br>IDSS<br>VGS= 0 V,<br>VDS= 40 V<br>TJ= 25°C<br>10<br>A<br>TJ= 125°C<br>100<br>Gate-to-Source Leakage Current<br>IGSS<br>VDS= 0 V, VGS= 20 V<br>100<br>nA<br>**ON CHARACTERISTICS**(Note 4)<br>~~eo~~<br>~~ee~~<br>~~ee ee~~<br>~~pO~~|||||
|Gate Threshold Voltage<br>Threshold Temperature Coefficient<br>~~po~~<br>~~a~~|VGS(TH)<br>VGS= VDS, ID= 250 A<br>2.5<br>3.5<br>V<br>VGS(TH)/TJ<br>−6.0<br>mV/°C<br>~~GO~~||||
|Drain-to-Source On Resistance<br>RDS(on)<br>VGS= 10 V<br>ID= 10 A<br>9.75<br>11.7<br>m<br>~~pO~~|||||
|**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||
|Input Capacitance|CISS||420||
|Output Capacitance|COSS|VGS= 0 V, f = 1 MHz, VDS= 25 V|210|pF|
|Reverse Transfer Capacitance|CRSS||11||
|Total Gate Charge|QG(TOT)||8.0||
|Threshold Gate Charge|QG(TH)||1.6|nC|
|Gate-to-Source Charge|QGS|VGS= 10 V, VDS= 32 V; ID= 10 A|2.5||
|Gate-to-Drain Charge|QGD||1.5||
|Plateau Voltage|VGP||4.7|V|
|**SWITCHING CHARACTERISTICS**(Note 5)|||||
|Turn-On Delay Time<br>td(ON)<br>Rise Time<br>tr<br>Turn-Off Delay Time<br>td(OFF)<br>Fall Time<br>tf<br>**DRAIN-SOURCE DIODE CHARACTERISTICS**<br>~~ee ee~~<br>~~ee ee~~<br>~~ee ~~~~**ee**~~<br>~~ee~~||VGS= 10 V, VDS= 32 V,<br>ID= 10 A, RG= 1.0<br>,|8.0<br>14<br>16<br>4.5<br>~~| |~~<br> ~~-}~~<br>~~|~~<br>~~**|** |~~<br>~~|~~|ns|
|Forward Diode Voltage<br>Reverse Recovery Time<br>Charge Time<br>Discharge Time<br>Reverse Recovery Charge<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~a~~<br>~~ee ~~<br>~~ee ~~<br>~~ee ~~<br>~~ee~~|VSD<br>VGS= 0 V,<br>IS= 10 A<br>TJ= 25°C<br>0.9<br>1.2<br>V<br>TJ= 125°C<br>0.8<br>tRR<br>VGS= 0 V, dIS/dt = 100 A/ s,<br>IS= 10 A<br>20<br>ns<br>ta<br>9.0<br>tb<br>10<br>QRR<br>7.5<br>nC<br>Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product<br>~~a~~<br>~~ee ee~~<br> ~~ee~~<br>~~|~~~~**|**~~<br> ~~ee~~<br>»<br>~~ft~~<br> ~~**ee**~~<br>~~| |~~<br>~~a a a~~||||
|performance may not be indicated by the Electrical Characteristics if operated under different conditions.|||||
|4. Pulse Test: pulse width<br>300 s, duty cycle<br><<br>u|300 s, duty cycle<br>2%.<br><||||



5. Switching characteristics are independent of operating junction temperatures. 

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**NVMFD5C470N** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
200 40<br>VDS = 3 V<br>180 10 V 35<br>160 pf} fe ee ee ee ee,<br>9 V 30<br>140 ee<br>pee 25 PF |ffLK<br>120<br>8 V<br>100 4 4 20 ‘A<br>80 7 V 15<br>60 TJ = 25  ° C<br>Zea Ef<br>10<br>40 6 V<br>20 4 V 5 V 5 T J  = 125  ° C TJ = −55  ° C<br>0 Zr 0 A Aa<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0<br>VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)<br>Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics<br>40 15<br>35 TI D J = 25 = 10 A ° C 1413<br>ee Os<br>30<br>12 V GS  = 10 V<br>25 ee 11<br>20 10<br>9<br>15<br>8<br>10<br>7<br>5 ee 6 ee<br>0 ee ee ee ee 5 a<br>4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80<br>VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On-Resistance vs. Gate-to-Source Figure 4. On-Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.9 10K<br>I D  = 10 A | | [ | [| [ J SSS TJ = 150  ° C<br>1.7 VGS = 10 V<br>eee ——_—$—_———— ee<br>1.5 OnPf |OO|| || [|| || KfLA][| | 1K ———————eea eeseee ee ee TJ = 125  eee ° C<br>1.3<br>FERRE eS TJ = 85  ° C<br>1.1 OnSSeSA 100 eTSS<br>0.9<br>Cee<br>0.7 | | [| | | | fT [|| 10 a ee ee ee ee<br>−50 −25 0 25 50 75 100 125 150 175 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN-TO-SOURCE VOLTAGE (V)<br>Figure 5. On-Resistance Variation with Figure 6. Drain-to-Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) )<br>, DRAIN-TO-SOURCE RESISTANCE (m , DRAIN-TO-SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>IDSS<br>, DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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## **TYPICAL CHARACTERISTICS** 

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1K 10<br>SSS SS SS Ciss 9 P| | | | | | TY<br>a ee Coss 8<br>7<br>100<br>OH 6 Q SH gs HE Qgd SeHSH<br>5<br>4<br>10 Crss<br>| | fm | 3 TTA<br>TJ = 25  ° C ——————— 2 | Yi] | | | V DS  = 32 V<br>VGS = 0 V ID = 10 A<br>f = 1 MHz Ee oo 1 LA | | | | | T J  = 25  ° C<br>1 | ot | | tf 0 Yi [| | | | |<br>0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9<br>VDS, DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source<br>Voltage vs. Total Charge<br>RR es ee en ee 10 ee<br>i VGS = 0 V oe a<br>en td(off) SSS<br>aT e e eeeee oe<br>ey<br>tr<br>10 TT Ae ee<br>ce t d(on) SS cet Oe 1 yA /ae<br>t f<br>Bec —_——<br>VGS = 10 V<br>VDS = 32 V<br>TJ = 125  ° C TJ = 25  ° C TJ = −55  ° C<br>1 0.1 ASAE<br>coin.) } =F<br>1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( Q ) VSD, SOURCE-TO-DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, GATE-TO-SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

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1000 100<br>TC = 25  ° C<br>VGS ≤  10 V<br>100 Single Pulse Code o T Ceti TJ(initial) = 25  ° C cot<br>10<br>10<br>10 s<br>1 TJ(initial) = 100  ° C<br>FEE REE pf LE NT<br>1<br>Thermal LimitRDS(on) Limit WY 10.5 msms at a<br>10 ms<br>Package Limit<br>0.1 — — e:i: eaCoil 0.1 aeell<br>0.1 1 10 100 1000 1.0E−05 1.0E−04 1.0E−03 1.0E−02<br>VDS, DRAIN-TO-SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

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## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100 —S_—_ee =... a— __--..-A A ==...EO=... SG==eeSG==...ESee===.EE OG =GG  SEOOee SS SSeee<br>BE 50% Duty Cycle SGSS OS<br>10 eisl=ee 20% 10%5% OOOOSSaee [SS] Lf————=== ==EE ———=.eT ee eTeeeae_ = ===eeEeerit==AAUeeeEE eee===i|Eee| ETI eeEee|llMAlllTT<br>2% PTT [eer TT TTT TT TTT TTT TPTPT<br>1 —— [ee] ca [A] [0] 00|<br>Sr a ee ee eee<br>1% a RO A OO SO OS NOE OO SG EGE EO OG ES GSS EE OO GS OO<br>SSeetSSS et<br>0.1 Single Pulse<br>a0pee ere eee EE0eee eee eeea eee0eee eee0 eee eee0eee eeeOOeee eee ee eee<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **DEVICE ORDERING INFORMATION** 

|**Device**|**Marking**|**Package**|**Shipping**†|
|---|---|---|---|
|NVMFD5C470NT1G|5C470N|DFN8<br>(Pb-Free)|1500 / Tape & Reel|
|NVMFD5C470NWFT1G|470NWF|DFN8<br>(Pb-Free, Wettable Flanks)|1500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**NVMFD5C470N** 

## **REVISION HISTORY** 

|**Revision**<br>**Description of Changes**<br>**Date**<br>2<br>Document rebranded to**onsemi**format.<br>8/27/2025<br>This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made<br>~~—~~|
|---|
|on the noted approval dates.|



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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)** CASE 506BT ISSUE F 

DATE 23 NOV 2021 

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1 DATE 23 NOV 2021<br>SCALE 2:1 2X NOTES:<br>0.20 C 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED<br>BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.<br>8 7 D16 5 B 2X 0.20 C 4.5. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELLAS THE TERMINALS.DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED<br>AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST<br>POINT ON THE PACKAGE BODY.<br>7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA.<br>PIN ONE E1 E MILLIMETERS<br>IDENTIFIER<br>ÉÉ DIM MIN NOM MAX<br>NOTE 7 A 0.90 −−− 1.10<br>ÉÉ 4Xh A1b 0.33−−− 0.42−−− 0.050.51<br>1 2 3 4 b1 0.33 0.42 0.51<br>ÉÉ c 0.20 −−− 0.33<br>TOP VIEW c A1 D 5.15 BSC<br>D1 4.70 4.90 5.10<br>0.10 C D2 3.90 4.10 4.30<br>A D3 1.50 1.70 1.90<br>DETAIL B E 6.15 BSC<br>0.10 C ALTERNATE E1 5.70 5.90 6.10<br>NOTE 4 SIDE VIEW C [SEATING] PLANE DETAIL A CONSTRUCTION E2e 3.90 1.27 BSC4.15 4.40<br>DETAIL A NOTE 6 G 0.45 0.55 0.65<br>h −−− −−− 12    �<br>D2 K 0.51 −−− −−−<br>D3 K1 0.56 −−− −−−<br>L 0.48 0.61 0.71<br>e 4X L M 3.25 3.50 3.75<br>1 4 K N 1.80 2.00 2.20<br>DETAIL B SOLDERING FOOTPRINT*<br>4.56<br>M N 4Xb1 E2 0.758X 2.082X 0.562X<br>8 5<br>4X G 8X b<br>K1 0.10 C A B 4X<br>4.84 1.40 6.59<br>BOTTOM VIEW 0.05 C NOTE 3 2.30<br>3.70<br>GENERIC<br>MARKING DIAGRAM*<br>0.70<br>1<br>XXXXXX<br>AYWZZ 4X 1.00 1.27<br>PITCH<br>XXXXXX = Specific Device Code 5.55<br>A = Assembly Location DIMENSION: MILLIMETERS<br>Y = Year<br>*For additional information on our Pb−Free strategy and soldering<br>W = Work Week details, please download the  onsemi  Soldering and Mounting<br>ZZ = Lot Traceability Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. 

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4.56<br>2X 2X<br>8X 2.082X 0.562X<br>0.758X<br>4X<br>4.84 1.40 6.59<br>2.30<br>3.70<br>0.70<br>4X 1.00 1.27<br>PITCH<br>5.55<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br>


   - *For additional information on our Pb−Free strategy and soldering details, please download the **onsemi** Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98AON50417E** 

**DESCRIPTION: DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL)** 

**PAGE 1 OF 1** 

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