NVMD6N04R2G

## NTMD6N04, NVMD6N04 

## MOSFET ~~ee~~ – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A 

## **Features** 

- Designed for use in low voltage, high speed switching applications 

- Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life 

   - RDS(on) = 0.027 VGS = 10 V (Typ) − RDS(on) = 0.034 VGS = 4.5 V (Typ) 

- Miniature SOIC−8 Surface Mount Package Saves Board Space 

- Diode is Characterized for Use in Bridge Circuits 

- Diode Exhibits High Speed, with Soft Recovery 

- NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- DC−DC Converters 

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|---|---|
|**VDSS**<br>40 V<br>~~a ~~|**RDS(ON) Typ**<br>**ID Max**<br>27 m @ VGS= 10 V<br>5.8 A<br> ~~ee~~<br>ee|



## **N−Channel** 

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D D<br>G G<br>S S<br>**----- End of picture text -----**<br>


- Computers 

- Printers 

## **MARKING DIAGRAM & PIN ASSIGNMENT** 

- Cellular and Cordless Phones 

- Disk Drives and Tape Drives 

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D1 D1 D2 D2<br>8 8<br>1 E6N04<br>SOIC−8 AYWW<br>CASE 751<br>STYLE 11<br>1<br>S1 G1 S2 G2<br>E6N04 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>40<br>V<br>Gate−to−Source Voltage − Continuous<br>VGS<br>20<br>V<br>~~es~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>40<br>V<br>Gate−to−Source Voltage − Continuous<br>VGS<br>20<br>V<br>~~es~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~||**SOIC−8**<br>**CASE 751**<br>**STYLE 11**<br>E6N04<br>AYWW<br>1<br>1|**SOIC−8**<br>**CASE 751**<br>**STYLE 11**<br>E6N04<br>AYWW<br>1<br>1||||
|---|---|---|---|---|---|---|---|
|Drain Current (Note 1)<br>− Continuous @ TA= 25°C<br>− Single Pulse (tp≤10 s)<br>ID<br>IDM<br>5.8<br>29<br>Adc<br>Apk<br>~~Po~~|||E6N04 = Specific Device Code<br>S1 G1<br>S2||G2|||
|Drain Current (Note 2)<br>ID<br>4.6|Adc||A<br>= Assembly Location|||||
|− Continuous @ TA= 25°C|||Y<br>= Year|||||
|Total Power Dissipation<br>@ TA= 25°C (Note 1)<br>PD<br>2.0|W||WW<br>= Work Week<br>= Pb−Free Package|||||
|@ TA= 25°C (Note 2)<br>1.29|||(Note: Microdot may be in either location)|||||
|Operating and Storage Temperature<br>Range<br>TJ, Tstg<br>−55 to +150|°C|||||||
|Single Pulse Drain−to−Source Avalanche<br>Energy − Starting TJ= 25°C<br>(VDD= 40 Vdc, VGS= 5.0 Vdc,<br>Vdc, Peak IL= 7.0 Apk,<br>L = 10 mH, RG= 25 )<br>EAS<br>245<br>mJ<br>Thermal Resistance<br>− Junction−to−Ambient (Note 1)<br>− Junction−to−Ambient (Note 2)<br>R JA<br>62.5<br>97<br>°C/W<br>Maximum Lead Temperature for<br>Soldering Purposes for 10 Sec<br>TL<br>260<br>°C<br>**Device**<br>**Package**<br>**Shipping**†<br>**ORDERING INFORMATION**<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>NTMD6N04R2G<br>SOIC−8<br>(Pb−Free)<br>2500 / Tape &<br>Reel<br>NVMD6N04R2G*<br>SOIC−8<br>(Pb−Free)<br>2500 / Tape &<br>Reel<br>~~Po. ffa~~||||||||
|Stresses exceeding Maximum Ratings may damage the device. Maximum<br>Ratings are stress ratings only. Functional operation above the Recommended|||refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.|||||



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

1. When surface mounted to an FR4 board using 1 ″ pad size, t ≤ 10 s 

Publication Order Number: **NTMD6N04R2/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **July, 2019 − Rev. 2** 

**NTMD6N04, NVMD6N04** 

2. When surface mounted to an FR4 board using 1 ″ pad size, t = steady state 

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**2** 

## **NTMD6N04, NVMD6N04** 

## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TC= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 250�A)<br>Temperature Coefficient (Positive)||V(BR)DSS<br>V(BR)DSS/TJ|40<br>−|47<br>45|−<br>−|Vdc<br>mV/°C|
|Zero Gate Voltage Drain Current<br>(VDS= 40 Vdc, VGS= 0 Vdc, TJ= 25°C)<br>(VDS= 40 Vdc, VGS= 0 Vdc, TJ= 125°C)||IDSS|−<br>−|−<br>−|1.0<br>10|�Adc|
|Gate−Body Leakage Current<br>(VGS=±20 Vdc, VDS= 0 Vdc)||IGSS|−|−|�100|nAdc|
|**ON CHARACTERISTICS**(Note 3)|||||||
|Gate Threshold Voltage<br>(VDS= VGS, ID= 250�Adc)<br>Temperature Coefficient (Negative)||VGS(th)<br>VGS(th)/TJ|1.0<br>−|1.9<br>4.7|3.0<br>−|Vdc<br>mV/°C|
|Static Drain−to−Source On−State Resistance<br>(VGS= 10 Vdc, ID= 5.8 Adc)<br>(VGS= 4.5 Vdc, ID= 3.9 Adc)||RDS(on)|−<br>−|0.027<br>0.034|0.034<br>0.043|�|
|Forward Transconductance<br>(VDS= 10 Vdc, ID= 5.8 Adc)||gFS|−|8.12|−|Mhos|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|(VDS= 32 Vdc, VGS= 0 Vdc,<br>f = 1.0 MHz)|Ciss|−|723|900|pF|
|Output Capacitance||Coss|−|156|225||
|Reverse Transfer Capacitance||Crss|−|53|75||
|**SWITCHING CHARACTERISTICS**(Notes 3 & 4)|||||||
|Turn−On Delay Time|(VDD= 20 Vdc, ID= 5.8 A,<br>VGS= 10 V,<br>RG= 6�)|td(on)|−|10|18|ns|
|Rise Time||tr|−|20|35||
|Turn−Off Delay Time||td(off)|−|45|70||
|Fall Time||tf|−|40|65||
|Turn−On Delay Time|(VDD= 20 Vdc, ID= 5.8 A,<br>VGS= 4.5 V,<br>RG= 6�)|td(on)|−|15|−|ns|
|Rise Time||tr|−|55|−||
|Turn−Off Delay Time||td(off)|−|30|−||
|Fall Time||tf|−|35|−||
|Gate Charge|(VDS= 20 Vdc,<br>VGS= 10 Vdc,<br>ID= 5.8 A)|QT|−|20|30|nC|
|||Qgs|−|2.5|−||
|||Qgd|−|5.5|−||
|**BODY−DRAIN DIODE RATINGS**(Note 3)|||||||
|Diode Forward On−Voltage|(IS= 1.7 Adc, VGS= 0 V)<br>(IS= 1.7 Adc, VGS= 0 V, TJ= 150°C)|VSD|−<br>−|0.76<br>0.56|1.1<br>−|Vdc|
|Reverse Recovery Time|(IS= 1.7 A, VGS= 0 V,<br>dIS/dt = 100 A/�s)|trr|−|23|−|ns|
|||ta|−|16|−||
|||tb|−|7|−||
|Reverse Recovery Stored Charge<br>(IS= 1.7 A, dIS/dt = 100 A/�s, VGS= 0 V)||QRR|−|20|−|nC|



3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

4. Switching characteristics are independent of operating junction temperature. 

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**3** 

**NTMD6N04, NVMD6N04** 

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14 20<br>6 V − 10 V TJ = 25 ° C 18 VDS �  10 V<br>12 4.0 V<br>3.4 V<br>3.8 V 16<br>10 14<br>12<br>8<br>3.6 V 3.2 V<br>10<br>6 8 TJ = 100 ° C<br>4 3.0 V 6 T J  = 25 ° C TJ = −55 ° C<br>4<br>2.4 V<br>2 2.8 V<br>2<br>VGS = 2.6 V<br>0 0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 1.5 2 2.5 3 3.5 4<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>, DRAIN CURRENT (A)ID , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br>


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0.2<br>VGS = 10 V<br>TJ = 25 ° C<br>0.15<br>0.1<br>0.05<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Gate−to−Source Voltage** 

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1.8 10000<br>1.7 ID = 5.8 A VGS = 0 V<br>1.6 VGS = 10 V TJ = 150 ° C<br>1.5 1000<br>1.4<br>1.3<br>1.2 100<br>1.1 TJ = 100 ° C<br>1<br>0.9 10<br>0.8<br>0.7<br>0.6 1<br>−50 −25 0 25 50 75 100 125 150 0 3 6 9 12 15 18 21 24 27 30 33 36 39 42<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 4. On Resistance Variation with Figure 5. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, LEAKAGE (nA)<br>IDSS<br>(NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**4** 

**NTMD6N04, NVMD6N04** 

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2400 10 25<br>VDS = 0 V TJ = 25 ° C QT<br>VGS = 0 V VGS<br>1800 Ciss 8 VDS 20<br>6 15<br>1200 Crss<br>Q1<br>C iss Q2 10<br>600<br>2 5<br>Coss ID = 5.8 A<br>0 Crss 0 TJ = 25 ° C 0<br>−10 −5 0 5 10 15 20 0 3 6 9 12 15 18 21<br>VGS VDS<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLT- Qg, TOTAL GATE CHARGE (nC)<br>AGE (V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS  DRAIN−TO−SOURCE VOLTAGE (V)<br>V DS,<br>V<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance Variation** 

**Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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4 100<br>VGS = 0 V VGS = 20 V<br>3.5 TJ = 25 ° C Single Pulse TC<br>TA = 25 ° C<br>3 10<br>2.5 10  � s<br>100  � s<br>2 1<br>1 ms<br>1.5 RDS(on) 10 ms<br>THERMAL LIMIT<br>1 0.1 PACKAGE LIMIT<br>dc<br>0.5 Mounted on FR4 board using 1 in pad size,<br>with die operating 10s max.<br>0 0.01<br>0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, SOURCE CURRENT (A)IS , DRAIN CURRENT (A)ID<br>**----- End of picture text -----**<br>


**Figure 8. Diode Forward Voltage vs. Current** 

**Figure 9. Maximum Rated Forward Biased Safe Operating Area** 

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**5** 

**NTMD6N04, NVMD6N04** 

## **PACKAGE DIMENSIONS** 

**SOIC−8 NB** CASE 751−07 ISSUE AK 

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NOTES:<br>−X− 1. DIMENSIONING AND TOLERANCING PER<br>ANSI Y14.5M, 1982.<br>A 2. CONTROLLING DIMENSION: MILLIMETER.<br>3. DIMENSION A AND B DO NOT INCLUDE<br>MOLD PROTRUSION.<br>4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)<br>8 5 PER SIDE.<br>rere 5. DIMENSION D DOES NOT INCLUDE DAMBAR<br>B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR<br>PROTRUSION SHALL BE 0.127 (0.005) TOTAL<br>1 IN EXCESS OF THE D DIMENSION AT<br>4 MAXIMUM MATERIAL CONDITION.<br>−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW<br>STANDARD IS 751−07.<br>G MILLIMETERS INCHES<br>DIM MIN MAX MIN MAX<br>A 4.80 5.00 0.189 0.197<br>C N X 45 B 3.80 4.00 0.150 0.157<br>SEATING C 1.35 1.75 0.053 0.069<br>PLANE D 0.33 0.51 0.013 0.020<br>−Z− G 1.27 BSC 0.050 BSC<br>H 0.10 0.25 0.004 0.010<br>0.10 (0.004) J 0.19 0.25 0.007 0.010<br>H D M J K 0.40 1.27 0.016 0.050<br>M 0  8  0  8<br>N 0.25 0.50 0.010 0.020<br>0.25 (0.010) M Z Y S X S S 5.80 6.20 0.228 0.244<br>STYLE 11:<br>SOLDERING FOOTPRINT* PIN 1. SOURCE 1<br>2. GATE 1<br>3. SOURCE 2<br>4. GATE 2<br>1.52 5.6. DRAIN 2DRAIN 2<br>0.060 7. DRAIN 1<br>8. DRAIN 1<br>p anes<br>7.0 4.0<br>0.275 wal 0.155<br>0.6 1.270<br>0.024 9006 0.050<br>SCALE 6:1 mm<br>inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NTMD6N04R2/D** 

**6**