NVH4L040N65S3F

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## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## MOSFET – Single N-Channel, SUPERFET III, FRFET 650 V, 65 A, 40 m 

## NVH4L040N65S3F 

## **Features** 

- Ultra Low Gate Charge & Low Effective Output Capacitance 

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- Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

|These Devices are Pb−Free and are RoHS Compliant|These Devices are Pb−Free and are RoHS Compliant|These Devices are Pb−Free and are RoHS Compliant|These Devices are Pb−Free and are RoHS Compliant|||**VDSS**|**VDSS**|**RDS(ON) MAX**|||||**ID MAX**|**ID MAX**|**ID MAX**|**MAX**|**MAX**|**MAX**|**MAX**|**MAX**|**MAX**|**MAX**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**MAXIMUM RATINGS**(TC= 25°C unless otherwise noted)||||||650 V||40 m @ 10 V|||||||65 A||||65 A||||
|**Parameter**|**Symbol**||**Value**|**Unit**|||||||||||||||||||
|Drain−to−Source Voltage<br>Gate−to−Source Voltage<br>− DC<br>Gate−to−Source Voltage<br>− AC (f > 1 Hz)<br>Drain Current<br>− Continuous (TC= 25°C)<br>Drain Current<br>− Continuous (TC= 100°C)<br>Drain Current<br>− Pulsed (Note 3)|VDSS<br>VGSS<br>VGSS<br>ID<br>ID<br>IDM||650<br>±30<br>±30<br>65<br>45<br>162.5|V<br>V<br>V<br>A<br>A<br>A||G|S1<br>~~,~~|D<br>S2<br>S1: Driver Source<br>S2: Power Source<br>~~,~~||||||||||||~~,~~|~~,~~|~~,~~|
|Power Dissipation<br>(TC= 25°C)|PD||446|W||||**POWER MOSFET**|||||||||||||||
|Power Dissipation<br>− Derate Above 25°C<br>Operating Junction and Storage Temperature<br>Range|PD<br>TJ, TSTG||3.57<br>−55 to<br>+150|W/°C<br>°C||||||**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|**MARKING**<br>**DIAGRAM**|
|Single Pulsed Avalanche Energy (Note 4)<br>EAS<br>1009<br>mJ<br>Repetitive Avalanche Energy (Note 3)<br>EAR<br>4.46<br>mJ<br>MOSFET dv/dt<br>dv/dt<br>100<br>V/ns<br>Peak Diode Recovery dv/dt (Note 5)<br>dv/dt<br>50<br>V/ns<br>Max. Lead Temperature for Soldering Purposes<br>(1/8″from case for 5 s)<br>TL<br>300<br>°C<br>~~—=ss ~~||||||D<br>G<br>S2S1<br> &||||$Y&Z&3&K<br>NVH4L040<br>N65S3F||||||||||||$Y&Z&3&K<br>NVH4L040|
|**THERMAL CHARACTERISTICS**|||||||**TO−247−4LD**||||||||||||||||
|**Parameter**|**Symbol**||**Value**|**Unit**|||**CASE 340CJ**||||||||||||||||
|Thermal Resistance, Junction−to−Case,|R JC||0.28|°C/W|||||||||||||||||||
|Max.<br>(Notes 1, 2)||||||$Y||= ON Semiconductor Logo||||||||= ON Semiconductor Logo|= ON Semiconductor Logo|= ON Semiconductor Logo|= ON Semiconductor Logo|= ON Semiconductor Logo|= ON Semiconductor Logo|= ON Semiconductor Logo|
|Thermal Resistance, Junction−to−Ambient,<br>Max.<br>(Notes 1, 2)|R JA||40|||&Z<br>&3||= Assembly Plant Code<br>= Data Code (Year & Week)||||||||||||= Data Code (Year & Week)|= Data Code (Year & Week)|= Data Code (Year & Week)|



## **MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

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MARKING<br>DIAGRAM<br>$Y&Z&3&K<br>NVH4L040<br>N65S3F<br>**----- End of picture text -----**<br>


$Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVH4L040N65S3F = Specific Device Code 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. 

**ORDERING INFORMATION Device Package Shipping** NVH4L040N65S3F TO−247−4LD 30 Units / Tube (Pb−Free) ~~fF~~ 

2. Assembled to an infinite heatsink with perfect heat transfer from the case (assumes 0 K/W thermal interface). 

3. Repetitive rating: pulse−width limited by maximum junction temperature. 4. IAS = 9 A, RG = 25 starting TJ = 25 ° C. 5. ISD ≤ 32.5 A, di/dt ≤ 200 A/ s, VDD ≤ 400 V, starting TJ = 25 ° C. 7 

Publication Order Number: **NVH4L040N65S3F/D** 

**1** 

© Semiconductor Components Industries, LLC, 2020 **August, 2020 − Rev. 0** 

## **NVH4L040N65S3F** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TC= 25°C unl|ess otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage|BVDSS|VGS= 0 V, ID= 1 mA, TJ= 25°C|650|||V|
|Drain−to−Source Breakdown Voltage|BVDSS|VGS= 0 V, ID= 10 mA, TJ= 150°C|700|||V|
|Breakdown Voltage Temperature<br>Coefficient|�BVDSS/<br>�TJ|ID= 10 mA, Referenced to 25�C||640||mV/�C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 650 V|||10|�A|
|||VDS= 520 V, TC= 125�C||103|||
|Gate−to−Body Leakage Current|IGSS|VGS=±30 V, VDS= 0 V|||±100|nA|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage|VGS(th)|VGS= VDS, ID= 2.1 mA|3.0||5.0|V|
|Threshold Temperature Coefficient|�VGS(th)/�TJ|VGS= VDS, ID= 2.1 mA||−9||mV/�C|
|Static Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 32.5 A||33.8|40|m�|
|Forward Transconductance|gFS|VDS= 20 V, ID= 32.5 A||40||S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 400 V, f = 1 MHz||5665||pF|
|Output Capacitance|Coss|||148|||
|Reverse Transfer Capacitance|Crss|||15.8|||
|Effective Output Capacitance|Coss(eff.)|VDS= 0 V to 400 V, VGS= 0 V||1347||pF|
|Energy Related Output Capacitance|Coss(er.)|VDS= 0 V to 400 V, VGS= 0 V||240||pF|
|Total Gate Charge at 10 V|QG(TOT)|VGS= 10 V, VDS= 400 V, ID= 32.5 A<br>(Note 6)||160||nC|
|Threshold Gate Charge|QG(TH)|||28.9|||
|Gate−to−Source Gate Charge|QGS|||47|||
|Gate−to−Drain “Miller” Charge|QGD|||65|||
|Equivalent Series Resistance|ESR|f = 1 MHz||1.9||�|
|**SWITCHING CHARACTERISTICS**|||||||
|Turn-On Delay Time|td(on)|VGS= 10 V, VDD= 400 V,<br>ID= 32.5 A, Rg= 2.2�<br>(Note 6)||39||ns|
|Turn-On Rise Time|tr|||27||ns|
|Turn-Off Delay Time|td(off)|||105||ns|
|Turn-Off Fall Time|tf|||7||ns|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|Maximum Continuous Source−to−<br>Drain Diode Forward Current|IS|VGS= 0 V|||65|A|
|Maximum Pulsed Source−to−Drain<br>Diode Forward Current|ISM|VGS= 0 V|||162.5|A|
|Source−to−Drain Diode Forward<br>Voltage|VSD|VGS= 0 V, ISD= 32.5 A|||1.3|V|
|Reverse Recovery Time|trr|VGS= 0 V, dIF/dt = 100 A/�s,<br>ISD= 32.5 A||145.9||ns|
|Charge Time|ta|||117.3|||
|Discharge Time|tb|||28.8|||
|Reverse Recovery Charge|Qrr|||744.5||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Essentially independent of operating temperature typical characteristics. 

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**2** 

**NVH4L040N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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200<br>VGS = 10 V 8.0 V<br>100<br>7.0 V<br>6.5 V<br>6.0 V<br>10<br>5.5 V<br>1<br>250  � s Pulse Test<br>TC = 25 ° C<br>0.1<br>0.2 1 10 20<br>VDS, DRAIN−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

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200<br>250  � s Pulse Test<br>100 VDS = 20 V<br>TJ = 25 ° C<br>10<br>TJ = 150 ° C<br>TJ = −55 ° C<br>1<br>3 4 5 6 7 8 9<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 3. Transfer Characteristics<br>1000<br>250  � s Pulse Test<br>100 VGS = 0 V<br>10<br>TJ = 150 ° C<br>1<br>T J  = 25 ° C<br>0.1<br>0.01<br>0.001 TJ = −55 ° C<br>0 0.5 1.0 1.5 2.0<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

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200<br>250  � s Pulse Test 8.0 V VGS = 10 V<br>100 TC = 150 ° C<br>7.0 V<br>6.5 V<br>6.0 V<br>5.5 V<br>10<br>1<br>0.1 1 10 20<br>VDS, DRAIN−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 2. On−Region Characteristics** 

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0.06<br>TC = 25 ° C<br>0.05<br>VGS = 10 V<br>0.04<br>VGS = 20 V<br>0.03<br>0.02<br>0 30 60 90 120 150 180<br>ID, DRAIN CURRENT (A)<br>Figure 4. On−Resistance Variation vs. Drain<br>Current and Gate Voltage<br>1M<br>100K<br>10K Ciss<br>1K<br>Coss<br>100<br>10 Crss<br>1 f = 1 MHz<br>VGS = 0 V<br>0.1<br>0.1 1 10 100 1K<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) �<br>, DRAIN−SOURCE ON−RESISTANCE (<br>DS(ON)<br>R<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 6. Capacitance Characteristics** 

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**3** 

**NVH4L040N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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10 1.2<br>ID = 32.5 A VDD = 130 V VGS = 0 V<br>ID = 10 mA<br>8<br>VDD = 400 V 1.1<br>6<br>1.0<br>4<br>0.9<br>2<br>0 0.8<br>0 60 120 180 −75 −25 25 75 125 175<br>Qg, TOTAL GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs.<br>Temperature<br>3.0 300<br>2.5 VGS = 10 V 100 30  � s<br>ID = 32.5 A<br>2.0 100  � s<br>1 ms<br>10<br>1.5 10 ms<br>Operation in this Area<br>1.0 is Limited by RDS(ON) DC<br>1<br>TC = 25 ° C<br>0.5 TJ = 150 ° C<br>Single Pulse<br>0 0.1<br>−75 −25 25 75 125 175 1 10 100 1K<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−SOURCE VOLTAGE (V)<br>Figure 9. On−Resistance Variation vs. Figure 10. Maximum Safe Operating Area<br>Temperature<br>80 40<br>70 35<br>60 30<br>50 25<br>40 20<br>30 15<br>20 10<br>10 5<br>0 0<br>25 50 75 100 125 150 0 130 260 390 520 650<br>TC, CASE TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN−SOURCE<br>DSS<br>BV<br>, GATE−SOURCE VOLTAGE (V)<br>GS<br>V<br>BREAKDOWN VOLTAGE (Normalized)<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN−SOURCE ON−RESISTANCE (Normalized)<br>DS(ON)<br>R<br>J)<br>�<br> (<br>oss<br>E<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Drain Current vs. Case Temperature** 

**Figure 12. EOSS vs. Drain−to−Source Voltage** 

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**4** 

**NVH4L040N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
200 1.2<br>180 VGS = VDS<br>ID = 2.1 mA<br>160<br>140<br>1.0<br>120<br>100<br>80 TA = 150 ° C<br>0.8<br>60<br>40 Pulse Duration = 250  � s T A  = 25 ° C<br>Duty Cycle = 0.5% Max<br>20 I D  = 32.5 A<br>0 0.6<br>4 5 6 7 8 9 10 −80 −40 0 40 80 120 160<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 13. RDS(ON) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage<br>vs. Temperature<br>100<br>Starting TJ = 25 ° C<br>10<br>Starting T J = 125 ° C<br>1<br>0.001 0.01 0.1 1 10 100<br>tAV, TIME IN AVALANCHE (ms)<br>) �<br>VOLTAGE<br>NORMALIZED GATE THRESHOLD<br>, DRAIN−SOURCE ON−RESISTANCE (m<br>DS(ON)<br>R<br>, AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br>


**Figure 15. Unclamped Inductive Switching Capability** 

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10<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01 0.01 P DM Z R �� JCJC (t) = r(t) x R = 0.28 ° C/W � JC<br>t1 Peak TJ = PDM x Z � JC(t) + TC<br>Single Pulse t2 Duty Cycle, D = t 1  / t 2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (s)<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 16. Transient Thermal Response Curve** 

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**5** 

**NVH4L040N65S3F** 

**Figure 17. Gate Charge Test Circuit & Waveform** 

**Figure 18. Resistive Switching Test Circuit & Waveforms** 

**Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms** 

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**6** 

**NVH4L040N65S3F** 

**Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms** 

SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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**7** 

**NVH4L040N65S3F** 

## **PACKAGE DIMENSIONS** 

**TO−247−4LD** CASE 340CJ ISSUE A 

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**NVH4L040N65S3F** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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