NVF6P02T3G

NTF6P02, NVF6P02 

## Power MOSFET -10 Amps, -20 Volts 

## **P−Channel SOT−223** 

## **http://onsemi.com** 

## **Features** 

- Low RDS(on) 

## **−10 AMPERES** 

- Logic Level Gate Drive 

**−20 VOLTS** 

- Diode Exhibits High Speed, Soft Recovery 

## **RDS(on) = 44 m (Typ.)** 

- Avalanche Energy Specified 

- NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* 

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S<br>G<br>D<br>P−Channel MOSFET<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free and are RoHS Compliant 

## **Typical Applications** 

- Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

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MARKING DIAGRAM<br>& PIN ASSIGNMENT<br>Drain<br>4<br>4<br>1<br>2 ~<br>3<br>AYW<br>SOT−223 6P02<br>CASE 318E<br>STYLE 3<br>& 1 2 3<br>Gate Drain Source<br>AY = Assembly Location= Year<br>Y = Year<br>W = Work Week<br>6P02 = Specific Device Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**Rating Symbol Value Unit & PIN ASSIGNMENT** Drain−to−Source Voltage VDSS −20 Vdc Drain 4 Gate−to−Source Voltage VGS ± 8.0 Vdc 4 ~~ee~~ 1 ~~otes ee~~ 2 ~ Drain Current (Note 1) 3 − Continuous @ TA = 25 ° C ID −10 Adc AYW − Continuous @ TA = 70 ° C ID −8.4 **SOT−223** 6P02 − Single Pulse (tp = 10 s) IDM −35 Apk **CASE 318E STYLE 3** Total Power Dissipation @ TA = 25 ° C PD 8.3 W ~~th” &~~ 1 2 3 Operating and Storage Temperature Range TJ, Tstg −55 to ° C Gate Drain Source +150 ~~ee~~ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 ° C ~~ee~~ EAS ~~ee~~ 150 mJ AY = Assembly Location= Year W = Work Week (VDD = −20 Vdc, VGS = −5.0 Vdc, ~~A~~ IL(pk) = −10 A, L = 3.0 mH, RG = 25 ) 6P02 = Specific Device Code Thermal Resistance ° C/W = Pb−Free Package (Note: Microdot may be in either location) − Junction to Lead (Note 1) R JL 15 − Junction to Ambient (Note 2) R JA 71.4 − Junction to Ambient (Note 3) R JA 160 ~~nae~~ Maximum Lead Temperature for Soldering TL 260 ° C **ORDERING INFORMATION** Purposes, 1/8 ″ from case for 10 seconds **Device Package Shipping**[†] Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended NTF6P02T3G SOT−223 4000 / Tape & Operating Conditions is not implied. Extended exposure to stresses above the (Pb−Free) Reel Recommended Operating Conditions may affect device reliability. 1. Steady State. NVF6P02T3G* SOT−223 4000 / Tape & 2. When surface mounted to an FR4 board using 1” pad size, ~~——=—~~ (Pb−Free) Reel (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad †For information on tape and reel specifications, including part orientation and tape sizes, please size, (Cu. Area 0.412 sq in), Steady State. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. 

Publication Order Number: **NTF6P02T3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **August, 2013 − Rev. 6** 

**NTF6P02, NVF6P02** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage (Note 4)<br>(VGS= 0 Vdc, ID= −250�Adc)<br>Temperature Coefficient (Positive)||V(BR)DSS|−20<br>−|−25<br>−11|−<br>−|Vdc<br>mV/°C|
|Zero Gate Voltage Drain Current<br>(VDS= −20 Vdc, VGS= 0 Vdc)<br>(VDS= −20 Vdc, VGS= 0 Vdc, TJ= 125°C)||IDSS|−<br>−|−<br>−|−1.0<br>−10|�Adc|
|Gate−Body Leakage Current<br>(VGS=± 8.0 Vdc, VDS= 0 Vdc)||IGSS|−|−|±100|nAdc|
|**ON CHARACTERISTICS** (Note 4)|||||||
|Gate Threshold Voltage (Note 4)<br>(VDS= VGS, ID= −250�Adc)<br>Threshold Temperature Coefficient (Negative)||VGS(th)|−0.4<br>−|−0.7<br>2.6|−1.0<br>−|Vdc<br>mV/°C|
|Static Drain−to−Source On−Resistance (Note 4)<br>(VGS= −4.5 Vdc, ID= −6.0 Adc)<br>(VGS= −2.5 Vdc, ID= −4.0 Adc)<br>(VGS= −2.5 Vdc, ID= −3.0 Adc)||RDS(on)|−<br>−<br>−|44<br>57<br>57|50<br>70<br>−|m�|
|Forward Transconductance (Note 4)<br>(VDS= −10 Vdc, ID= −6.0 Adc)||gfs|−|12|−|Mhos|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|(VDS= −16 Vdc, VGS= 0 V,<br>f = 1.0 MHz)|Ciss|−|900|1200|pF|
|Output Capacitance||Coss|−|350|500||
|Transfer Capacitance||Crss|−|90|150||
|Input Capacitance|(VDS= −10 Vdc, VGS= 0 V,<br>f = 1.0 MHz)|Ciss|−|940|−|pF|
|Output Capacitance||Coss|−|410|−||
|Transfer Capacitance||Crss|−|110|−||
|**SWITCHING CHARACTERISTICS**(Note 5)|||||||
|Turn−On Delay Time|(VDD= −5.0 Vdc, ID= −1.0 Adc,<br>VGS= −4.5 Vdc,<br>RG= 6.0�)|td(on)|−|7.0|12|ns|
|Rise Time||tr|−|25|45||
|Turn−Off Delay Time||td(off)|−|75|125||
|Fall Time||tf|−|50|85||
|Turn−On Delay Time|(VDD= −16 Vdc, ID= −6.0 Adc,<br>VGS= −4.5 Vdc,<br>RG= 2.5�)|td(on)|−|8.0|−|ns|
|Rise Time||tr|−|30|−||
|Turn−Off Delay Time||td(off)|−|60|−||
|Fall Time||tf|−|60|−||
|Gate Charge|(VDS= −16 Vdc, ID= −6.0 Adc,<br>VGS= −4.5 Vdc) (Note 4)|QT|−|15|20|nC|
|||Qgs|−|1.7|−||
|||Qgd|−|6.0|−||
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|Forward On−Voltage|(IS= −3.0 Adc, VGS= 0 Vdc) (Note 4)<br>(IS= −2.1 Adc, VGS= 0 Vdc)<br>(IS= −3.0 Adc, VGS= 0 Vdc, TJ= 125°C)|VSD|−<br>−<br>−|−0.82<br>−0.74<br>−0.68|−1.2<br>−<br>−|Vdc|
|Reverse Recovery Time|(IS= −3.0 Adc, VGS= 0 Vdc,<br>dIS/dt = 100 A/�s) (Note 4)|trr|−|42|−|ns|
|||ta|−|17|−||
|||tb|−|25|−||
|Reverse Recovery Stored Charge||QRR|−|0.036|−|�C|



4. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

5. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTF6P02, NVF6P02** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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12 12<br>−7.0−10 V  V −2.2 V −2.0 V TJ = 25 ° C VDS  ≥  −10 V<br>10<br>−5.0 V<br>9<br>−2.4 V<br>−3.2 V 8<br>−1.8 V<br>−4.4 V<br>6 6<br>−1.6 V<br>4<br>3 TJ = −55 ° C<br>−1.4 V<br>2<br>VGS = −1.2 V TJ = 25 ° C TJ = 100 ° C<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.2 0.08<br>TJ = 25 ° C<br>0.07<br>ID = −6.0 A<br>0.15 TJ = 25 ° C VGS = −2.5 V<br>0.06<br>0.1 0.05<br>VGS = −4.5 V<br>0.04<br>0.05<br>0.03<br>0 0.02<br>0 1 2 3 4 5 6 2 4 6 8 10 12 14<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current<br>Gate−to−Source Voltage and Gate Voltage<br>1.6 10,000<br>IVDGS = − = −4.5 V6.0 A VGS = 0 V TJ = 150 ° C<br>1.4<br>1.2<br>1000<br>1.0<br>0.8 TJ = 100 ° C<br>0.6 100<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br> DRAIN CURRENT (AMPS)  DRAIN CURRENT (AMPS)<br>D, D,<br>−I −I<br>) � ) �<br> DRAIN−TO−SOURCE RESISTANCE (  DRAIN−TO−SOURCE RESISTANCE (<br>DS(on), DS(on),<br>R R<br>, LEAKAGE (nA)<br>DSS<br>(NORMALIZED) −I<br> DRAIN−TO−SOURCE RESISTANCE<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current versus Voltage** 

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**3** 

**NTF6P02, NVF6P02** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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3000 5 20<br>C iss VDS = 0 V VGS = 0 V TJ = 25 ° C −VDS QT<br>2400 4 16<br>−VGS<br>1800 3 12<br>Crss Qgs<br>Qgd<br>1200 Ciss 2 8<br>600 Coss 1 ITDJ = −6.0 A = 25 ° C 4<br>Crss<br>0 0 0<br>10 5 −VGS 0 −VDS 5 10 15 20 0 4 8 12 16<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE Qg, TOTAL GATE CHARGE (nC)<br>(VOLTS)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage versus Total Charge<br>1000 7<br>VDD = −16 V<br>I V D GS   = −3.0 A = −4.5 V 6 TVJGS = 25 = 0 V ° C<br>td(off) 5<br>100<br>tf 4<br>tr 3<br>10<br>2<br>td(on)<br>1<br>1 0<br>1 10 100 0.3 0.6 0.9 1.2<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)<br>GS DS<br>−V −V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation versus Gate Resistance** 

**Figure 10. Diode Forward Voltage versus Current** 

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**4** 

**NTF6P02, NVF6P02** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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1<br>D = 0.5<br>0.2<br>0.1 NORMALIZED TO R � JA AT STEADY STATE (1 ″  PAD)<br>0.1 0.05<br>0.0175 � 0.0710 � 0.2706 � 0.5779 � 0.7086 �<br>0.02 CHIP<br>JUNCTION<br>0.0154 F 0.0854 F 0.3074 F 1.7891 F 107.55 F<br>0.01<br>AMBIENT<br>SINGLE PULSE<br>0.01<br>1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03<br>t, TIME (s)<br>, EFFECTIVE TRANSIENT<br>THERMAL RESPONSE<br>THJA(t)<br>R<br>**----- End of picture text -----**<br>


**Figure 11. FET Thermal Response** 

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**5** 

**NTF6P02, NVF6P02** 

## **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE N 

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D NOTES:<br>DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>b1 CONTROLLING DIMENSION: INCH.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>4 A 1.50 1.63 1.75 0.060 0.064 0.068<br>ret ————— A1 0.02 0.06 0.10 0.001 0.002 0.004<br>HE E b 0.60 0.75 0.89 0.024 0.030 0.035<br>1 2 3 b1 2.90 3.06 3.20 0.115 0.121 0.126<br>c 0.24 0.29 0.35 0.009 0.012 0.014<br>D 6.30 6.50 6.70 0.249 0.256 0.263<br>E 3.30 3.50 3.70 0.130 0.138 0.145<br>b e 2.20 2.30 2.40 0.087 0.091 0.094<br>eeeee e1 0.85 0.94 1.05 0.033 0.037 0.041<br>e1 L 0.20 −−− −−− 0.008 −−− −−−<br>e e e eee L1 1.50 1.75 2.00 0.060 0.069 0.078<br>H E 6.70 7.00 7.30 0.264 0.276 0.287<br>C 0° − 1 0° 0° − 1 0°<br>A STYLE 3:<br>PIN 1. GATE<br>0.08 (0003) 2. DRAIN<br>ep A1 . L =oo L1 7 6SSESSE 3.4. SOURCEDRAIN<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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3.8<br>_I 0.15<br>_<br>2.0<br>0.079<br>“ES,<br>6.3<br>2.3 2.3<br>0.248<br>0.091 0.091<br>2.0<br>0.079<br>arenes<br>1.5 SCALE 6:1 mm<br>— { 0.059 — Le — inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**6**