NVF3055L108T1G

## NTF3055L108, NVF3055L108 

## MOSFET – Power, N-Channel, Logic Level, SOT-223 

## 3.0 A, 60 V 

Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. 

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## **3.0 A, 60 V** 

## **R = 120 m DS(on)** 

## **Features** 

- NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

## **Applications** 

- Power Supplies 

- Converters 

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**----- Start of picture text -----**<br>
N−Channel<br>D<br>G<br>S<br>**----- End of picture text -----**<br>


- Power Motor Controls 

- Bridge Circuits 

**MAXIMUM RATINGS** (TC = 25 ° C unless otherwise noted) 

|**Rating**<br>~~ee~~<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~Ge~~<br>~~es~~<br>|**Value**<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|**Unit**<br>~~ee~~<br>|
|---|---|---|---|
|Drain−to−Source Voltage<br>~~ee~~<br>~~ee~~|VDSS<br>~~Ge ~~<br>~~ee~~<br>~~es~~<br>|60<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>|Vdc<br>~~ee~~<br>|
|Drain−to−Gate Voltage (RGS= 1.0 M )<br>~~ee ae~~<br>~~Po,~~|VDGR<br>~~es~~<br>~~ae~~|60<br>~~ee~~<br>~~ae~~|Vdc<br>~~ae~~|
|Gate−to−Source Voltage<br>− Continuous<br>− Non−repetitive (tp ≤10 ms)<br>~~ee ae~~<br>~~Po,~~|VGS<br>~~es~~<br>~~ae~~|± 15<br>± 20<br>~~ee~~<br>~~ae~~|Vdc<br>Vpk<br>~~ae~~|
|Drain Current<br>− Continuous @ TA= 25°C (Note 1)<br>− Continuous @ TA= 100°C (Note 2)<br>− Single Pulse (tp ≤10 s)<br>~~ee ae~~<br>~~Po,~~|ID<br>ID<br>IDM<br>~~es ~~<br>~~ae~~<br>LEY|3.0<br>1.4<br>9.0<br> ~~ee~~<br>~~ae~~<br>LEY|Adc<br>Apk<br>~~ae~~<br>LEY|
|Total Power Dissipation @ TA= 25°C (Note 1)<br>Total Power Dissipation @ TA= 25°C (Note 2)<br>Derate above 25°C<br>~~ae~~<br>~~Po,~~|PD<br>~~ae~~|2.1<br>1.3<br>0.014<br>~~ae~~|Watts<br>Watts<br>W/°C<br>~~ae~~|
|Operating and Storage Temperature Range|TJ, Tstg|−55<br>to 175|°C|
|Single Pulse Drain−to−Source Avalanche<br>Energy − Starting TJ= 25°C<br>(VDD= 25 Vdc, VGS= 5.0 Vdc,<br>IL(pk)= 7.0 Apk, L = 3.0 mH, VDS= 60 Vdc)|EAS|74|mJ|
|Thermal Resistance<br>−Junction−to−Ambient (Note 1)<br>−Junction−to−Ambient (Note 2)|R JA<br>R JA<br>~~ee ee~~|72.3<br>114<br>~~ee~~|°C/W<br>~~ee~~|
|Maximum Lead Temperature for Soldering<br>Purposes, 1/8″from case for 10 seconds<br>~~ee~~|TL<br>~~ee~~<br>~~ee ee~~|260<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|



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4<br>_ SOT−223<br>CASE 318E<br>1<br>2 STYLE 3<br>3<br>MARKING DIAGRAM<br>3055L = Device Code AYW<br>A = Assembly Location 3055L<br>Y = Year<br>W = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>a<br>PIN ASSIGNMENT<br>4 Drain<br>1 2 3<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 

Publication Order Number: **NTF3055L108/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **May, 2019 − Rev. 9** 

**NTF3055L108, NVF3055L108** 

1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz. (Cu. Area 1 in[2] ). 

2. When surface mounted to an FR4 board using minimum recommended pad size, 2 oz. (Cu. Area 0.272 in[2] ). 

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**2** 

## **NTF3055L108, NVF3055L108** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted|)|||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage (Note 3)<br>(VGS= 0 Vdc, ID= 250�Adc)<br>Temperature Coefficient (Positive)||V(BR)DSS|60<br>−|68<br>68|−<br>−|Vdc<br>mV/°C|
|Zero Gate Voltage Drain Current<br>(VDS= 60 Vdc, VGS= 0 Vdc)<br>(VDS= 60 Vdc, VGS= 0 Vdc, TJ= 150°C)||IDSS|−<br>−|−<br>−|1.0<br>10|�Adc|
|Gate−Body Leakage Current<br>(VGS=± 15 Vdc, VDS= 0 Vdc)||IGSS|−|−|± 100|nAdc|
|**ON CHARACTERISTICS**(Note 3)|||||||
|Gate Threshold Voltage (Note 3)<br>(VDS= VGS, ID= 250�Adc)<br>Threshold Temperature Coefficient (Negative)||VGS(th)|1.0<br>−|1.68<br>4.6|2.0<br>−|Vdc<br>mV/°C|
|Static Drain−to−Source On−Resistance (Note 3)<br>(VGS= 5.0 Vdc, ID= 1.5 Adc)||RDS(on)|−|92|120|m�|
|Static Drain−to−Source On−Resistance (Note 3)<br>(VGS= 5.0 Vdc, ID= 3.0 Adc)<br>(VGS= 5.0 Vdc, ID= 1.5 Adc, TJ= 150°C)||VDS(on)|−|0.290<br>0.250|0.43<br>−|Vdc|
|Forward Transconductance (Note 3)<br>(VDS= 7.0 Vdc, ID= 3.0 Adc)||gfs|−|5.7|−|Mhos|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|(VDS= 25 Vdc, VGS= 0 V,<br>f = 1.0 MHz)|Ciss|−|313|440|pF|
|Output Capacitance||Coss|−|112|160||
|Transfer Capacitance||Crss|−|40|60||
|**SWITCHING CHARACTERISTICS**(Note 4)|||||||
|Turn−On Delay Time|(VDD= 30 Vdc, ID= 3.0 Adc,<br>VGS= 5.0 Vdc,<br>RG= 9.1�) (Note 3)|td(on)|−|11|25|ns|
|Rise Time||tr|−|35|70||
|Turn−Off Delay Time||td(off)|−|22|45||
|Fall Time||tf|−|27|60||
|Gate Charge|(VDS= 48 Vdc, ID= 3.0 Adc,<br>VGS= 5.0 Vdc) (Note 3)|QT|−|7.6|15|nC|
|||Q1|−|1.4|−||
|||Q2|−|4.0|−||
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|Forward On−Voltage|(IS= 3.0 Adc, VGS= 0 Vdc)<br>(IS= 3.0 Adc, VGS= 0 Vdc,<br>TJ= 150°C) (Note 3)|VSD|−<br>−|0.87<br>0.72|1.0<br>−|Vdc|
|Reverse Recovery Time|(IS= 3.0 Adc, VGS= 0 Vdc,<br>dIS/dt = 100 A/�s) (Note 3)|trr|−|35|−|ns|
|||ta|−|21|−||
|||tb|−|14|−||
|Reverse Recovery Stored Charge||QRR|−|0.044|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2.0%. 

4. Switching characteristics are independent of operating junction temperatures. 

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**3** 

**NTF3055L108, NVF3055L108** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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6 6<br>VGS = 3.4 V VDS > = 10 V<br>5 VGS = 3.5 V 5<br>4 VGS = 4.5 V VGS = 3.2 V 4<br>3 VGS = 6 V VGS = 3 V 3<br>TJ = 100 ° C<br>2 VGS = 10 V 2<br>VGS = 2.8 V TJ = 25 ° C<br>1 1<br>VGS = 2.5 V TJ = −55 ° C<br>0 0<br>0 0.5 1 1.5 2 2.5 3 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.16 0.16<br>VGS = 5 V T J  = 100 ° C VGS = 10 V<br>0.14 0.14<br>0.12 0.12 T J  = 100 ° C<br>TJ = 25 ° C<br>0.1 0.1<br>TJ = 25 ° C<br>0.08 0.08<br>TJ = −55 ° C<br>0.06 0.06 T J  = −55 ° C<br>0.04 0.04<br>0.02 0.02<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2 10000<br>ID =  1.5 A VGS = 0 V<br>1.8 VGS = 5 V<br>TJ = 150 ° C<br>1000<br>1.6<br>1.4<br>100<br>1.2<br>TJ = 100 ° C<br>1<br>10<br>0.8<br>0.6 1<br>−50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br> DRAIN CURRENT (AMPS)  DRAIN CURRENT (AMPS)<br>ID, ID,<br>)<br>� )<br> DRAIN−TO−SOURCE RESISTANCE ( �<br> DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R DS(on),<br>R<br>, LEAKAGE (nA)<br>IDSS<br>(NORMALIZED)<br> DRAIN−TO−SOURCE RESISTANCE<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**4** 

**NTF3055L108, NVF3055L108** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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6<br>1000 VDS = 0 V VGS = 0 V TJ = 25 ° C<br>QT<br>5<br>800 Ciss VGS<br>4 Q1<br>600 Q2<br>3<br>C rss<br>400 C iss<br>2<br>Coss<br>200<br>1<br>C rss T IDJ = 3 A  = 25 ° C<br>0 0<br>10 5 VGS 0 VDS 5 10 15 20 25 0 1 2 3 4 5 6 7 8<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE Qg, TOTAL GATE CHARGE (nC)<br>(VOLTS)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 3.2<br>VDS = 30 V V GS  = 0 V<br>ID = 3 A 2.8 T J  = 25 ° C<br>VGS = 5 V<br>2.4<br>100<br>tr 2<br>1.6<br>tf<br>td(off) 1.2<br>10<br>td(on) 0.8<br>0.4<br>1 0<br>1 10 100 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>10 80<br>100  � s ID = 7 A<br>70<br>1 ms<br>1 60<br>10 ms<br>50<br>0.1 40<br>VGS = 20 V dc 30<br>SINGLE PULSE<br>0.01 TC = 25 ° C 20<br>RDS(on) LIMIT<br>THERMAL LIMIT 10<br>PACKAGE LIMIT<br>0.001<br>0<br>0.1 1 10 100 1000 25 50 75 100 125 150 175<br>VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>IS<br>, DRAIN CURRENT (AMPS)<br>ID AVALANCHE ENERGY (mJ)<br>, SINGLE PULSE DRAIN−TO−SOURCE<br>AS<br>E<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**5** 

**NTF3055L108, NVF3055L108** 

## **TYPICAL ELECTRICAL CHARACTERISTICS** 

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100<br>D = 0.5<br>0.2<br>10 0.1<br>0.05<br>0.02<br>1<br>0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, TIME (s)<br>RESPONSE RESISTANCE<br>r(t), EFFECTIVE TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTF3055L108T1G|SOT−223 (TO−261)<br>(Pb−Free)|1000 / Tape & Reel|
|NVF3055L108T1G|SOT−223 (TO−261)<br>(Pb−Free)|1000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

**SCALE 1:1** 

## DATE 02 OCT 2018 

**DOCUMENT NUMBER: 98ASB42680B** 

**DESCRIPTION: SOT−223 (TO−261)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2018 

DATE 02 OCT 2018 

## **SOT−223 (TO−261)** CASE 318E−04 ISSUE R 

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. GATE PIN 1. SOURCE PIN 1. DRAIN 2. COLLECTOR 2. CATHODE 2. DRAIN 2. DRAIN 2. GATE 3. EMITTER 3. NC 3. SOURCE 3. GATE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN 4. DRAIN 4. GATE STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: PIN 1. RETURN PIN 1. ANODE 1 CANCELLED PIN 1. INPUT PIN 1. CATHODE 2. INPUT 2. CATHODE 2. GROUND 2. ANODE 3. OUTPUT 3. ANODE 2 3. LOGIC 3. GATE 4. INPUT 4. CATHODE 4. GROUND 4. ANODE STYLE 11: STYLE 12: STYLE 13: PIN 1. MT 1 PIN 1. INPUT PIN 1. GATE 2. MT 2 2. OUTPUT 2. COLLECTOR 3. GATE 3. NC 3. EMITTER 4. MT 2 4. OUTPUT 4. COLLECTOR **GENERIC MARKING DIAGRAM*** AYW XXXXX 1 ~~|~~ A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42680B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOT−223 (TO−261) PAGE 2 OF 2** ~~—ee~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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