NVD5807NT4G

## NTD5807N, NVD5807N 

## Power MOSFET **40 V, 23 A, Single N−Channel, DPAK/IPAK** 

## **Features** 

- Low RDS(on) 

- High Current Capability 

## **http://onsemi.com** 

- Avalanche Energy Specified 

- AEC−Q101 Qualified and PPAP Capable − NVD5807N 

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• These Devices are Pb−Free and are RoHS Compliant ee V(BR)DSS RDS(on) ee  MAX ID MAX ee<br>37 m  @ 4.5 V 16 A<br>40 V<br>Applications 31 m  @ 10 V 23 A<br>• CCFL Backlight<br>• DC Motor Control D<br>• Class D Amplifier<br>• Power Supply Secondary Side Synchronous Rectification<br>° G<br>MAXIMUM RATINGS  (TJ = 25 C unless otherwise noted)<br>Parameter Symbol Value Unit<br>es Drain−to−Source Voltage Ge VDSS ee 40 V N−CHANNEL MOSFET re S<br>Gate−to−Source Voltage − Continuous VGS 20 V<br>$$ 4 4<br>Gate−to−Source Voltage VGS 30 V<br> − Non−Repetitive (tp < 10 S)<br>Continuous Drain TC = 25 ° C ID 23 A 1 [2] 3<br>pt (Note 1)Current (R JC) Steady TC = 100 ° C 16 > DPAK 1 bd IPAK<br>Power Dissipation State TC = 25 ° C PD 33 W (Surface Mount)CASE 369AA 2 3 (Straight LeadCASE 369D<br>(R JC) (Note 1)<br>ppa eee eee STYLE 2 DPAK)<br>es Pulsed Drain Current ee tp = 10 s IDM 45 A<br>Operating Junction and Storage Temperature TJ, Tstg −55 to ° C MARKING DIAGRAMS<br>175 & PIN ASSIGNMENT<br>Po<br>4<br>Source Current (Body Diode) IS 23 A 4 Drain<br>eeGe es<br>Drain<br>Single Pulse Drain−to−Source Avalanche  EAS 29.4 mJ<br>Energy (VDD = 50 V, VGS = 10 V, RG = 25<br>IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V)<br>Lead Temperature for Soldering Purposes TL 260 ° C<br>(1/8 ″  from case for 10 s)<br>Po<br>Stresses exceeding those listed in the Maximum Ratings table may damage the 2<br>device. If any of these limits are exceeded, device functionality should not be 1 Drain 3<br>assumed, damage may occur and reliability may be affected. ae Gate . Source 7<br>1 2 3<br>Gate Drain Source<br>THERMAL RESISTANCE MAXIMUM RATINGS<br>A = Assembly Location*<br>es Parameter Symbol es es Value Unit Y = Year<br>Junction−to−Case (Drain) R JC 4.5 ° C/W WW = Work Week<br>5807N = Device Code<br>Junction−to−Ambient − Steady State (Note 1) R JA 107 G = Pb−Free Package<br>AYWW 58 07NG<br>AYWW 58 07NG<br>**----- End of picture text -----**<br>


1. Surface−mounted on FR4 board using the minimum recommended pad size. 

* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 

Publication Order Number: **NTD5807N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **June, 2014 − Rev. 5** 

## **NTD5807N, NVD5807N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C un|less otherwise noted)|less otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||38||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 40 V|TJ= 25°C|||1.0|�A|
||||TJ= 150°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±20 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.4||2.5|V|
|Negative Threshold Temperature Co-<br>efficient|VGS(TH)/TJ||||−5.8||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 5.0 A|||20|31|m�|
|||VGS= 4.5 V, ID= 4.0 A|||29|37||
|Forward Transconductance|gFS|VDS= 10 V, ID= 15 A|||8.1||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= 25 V|||603||pF|
|Output Capacitance|Coss||||96|||
|Reverse Transfer Capacitance|Crss||||73|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 20 V,<br>ID= 5.0 A|||12.6|20|nC|
|Threshold Gate Charge|QG(TH)||||0.76|||
|Gate−to−Source Charge|QGS||||2.2|||
|Gate−to−Drain Charge|QGD||||3.1|||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= 4.5 V, VDD= 20 V,<br>ID= 30 A, RG= 2.5�|||11.2||ns|
|Rise Time|tr||||111|||
|Turn−Off Delay Time|td(off)||||11.2|||
|Fall Time|tf||||3.2|||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 20 V,<br>ID= 30 A, RG= 2.5�|||6.7||ns|
|Rise Time|tr||||20.4|||
|Turn−Off Delay Time|td(off)||||15.6|||
|Fall Time|tf||||2.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.91|1.2|V|
||||TJ= 150°C||0.76|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt<br>IS= 30|= 100 A/�s,<br>A||15.7||ns|
|Charge Time|ta||||10.75|||
|Discharge Time|tb||||5.0|||
|Reverse Recovery Charge|QRR||||6.1||nC|



2. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTD5807N, NVD5807N** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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45 50<br>40 10 V VGS = 5 V TJ = 25 ° C VDS ≥  10 V<br>35 4.5 V 40<br>30 4.2 V<br>30<br>25 4.0 V<br>20 3.8 V TJ = 25 ° C<br>20<br>15<br>3.4 V TJ = 150 ° C<br>10<br>10<br>5<br>3.0 V TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 6 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.025 0.040<br>VGS = 10 V 0.038 TJ = 25 ° C<br>0.036<br>0.023<br>0.034<br>0.032 VGS = 4.5 V<br>0.021 TJ = 25 ° C 0.030<br>0.028<br>0.019 0.026<br>0.024<br>0.022 VGS = 10 V<br>0.017<br>0.020<br>0.018<br>0.015 0.016<br>5 10 15 20 25 5 10 15 20 25 30 35 40 45<br>ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.8 10,000<br>1.7 ID = 5 A VGS = 0 V TJ = 150 ° C<br>1.6 VGS = 10 V 1,000<br>1.5<br>1.4<br>100<br>1.3<br>1.2<br>10<br>1.1<br>1.0 TJ = 25 ° C<br>0.9 1.0<br>0.8<br>0.7 0.1<br>−50 −25 0 25 50 75 100 125 150 175 2 12 22 32 42<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>IDSS<br>, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTD5807N, NVD5807N** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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1500 12 24<br>VGS = 0 V QT<br>1250<br>TJ = 25 ° C 9 18<br>1000 VDS VGS<br>Ciss<br>750 6 12<br>500 Crss 3 Qgs Qgd ID = 5 A 6<br>250 Coss TJ = 25 ° C<br>0 0 0<br>10 5 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14<br>Vgs Vds Qg, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 8. Gate−to−Source and<br>Figure 7. Capacitance Variation Drain−to−Source Voltage vs. Total Charge<br>100 20<br>VDD = 32 V ttd(off)d(on) VGS = 0 V<br>ID = 30 A tr TJ = 25 ° C<br>VGS = 10 V 15<br>10 tf 10<br>5<br>1 0<br>1 10 100 0.4 0.6 0.8 1.0 1.2 1.4<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000<br>100<br>10  � s<br>10 100  � s<br>VGS = 10 V 1 ms<br>Single Pulse<br>1 TC = 25 ° C 10 ms<br>dc<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.1<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>V<br>DS<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V , DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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**4** 

**NTD5807N, NVD5807N** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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10<br>D = 0.5<br>0.2<br>1<br>0.1<br>0.05<br>0.02<br>0.01<br>Single Pulse<br>0.1<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, PULSE TIME (s)<br>C/W)<br>( °<br>r(t), Effective Transient Thermal Resistance<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Response** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Order Number**|**Package**|**Shipping**†|
|NTD5807NG|IPAK (Straight Lead DPAK)<br>(Pb−Free)|75 Units / Rail|
|NTD5807NT4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|NVD5807NT4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**5** 

**NTD5807N, NVD5807N** 

## **PACKAGE DIMENSIONS** 

**DPAK (SINGLE GUAGE)** CASE 369AA−01 ISSUE B 

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NOTES:<br>C 1. DIMENSIONING AND TOLERANCING PER ASME<br>A Y14.5M, 1994.<br>E A 2.3. CONTROLLING DIMENSION: INCHES.THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>MENSIONS b3, L3 and Z.<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 4 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.<br>INCHES MILLIMETERS<br>DIM MIN MAX MIN MAX<br>L4 A 0.086 0.094 2.18 2.38<br>b2 A1 0.000 0.005 0.00 0.13<br>b c b 0.025 0.035 0.63 0.89<br>b2 0.030 0.045 0.76 1.14<br>e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46<br>c 0.018 0.024 0.46 0.61<br>L2 [GAUGE] PLANE C SEATINGPLANE c2D 0.0180.235 0.0240.245 0.465.97 0.616.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>H 0.370 0.410 9.40 10.41<br>L A1 L 0.055 0.070 1.40 1.78<br>L1 L1 0.108 REF 2.74 REF<br>L2 0.020 BSC 0.51 BSC<br>DETAIL A L3 0.035 0.050 0.89 1.27<br>ROTATED 90  CW � L4 −−− 0.040 −−− 1.01<br>Z 0.155 −−− 3.93 −−−<br>SOLDERING FOOTPRINT* STYLE 2:<br>PIN 1. GATE<br>2. DRAIN<br>6.20 3.00 3. SOURCE<br>0.244 0.118 4. DRAIN<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**6** 

**NTD5807N, NVD5807N** 

## **PACKAGE DIMENSIONS** 

**IPAK** CASE 369D−01 ISSUE C 

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B C NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>V R E ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>4 Z DIM MIN MAX MIN MAX<br>A 0.235 0.245 5.97 6.35<br>a A ee B 0.250 0.265 6.35 6.73<br>S<br>1 2 3 C 0.086 0.094 2.19 2.38<br>D 0.027 0.035 0.69 0.88<br>E 0.018 0.023 0.46 0.58<br>−T− F 0.037 0.045 0.94 1.14<br>SEATING G 0.090 BSC 2.29 BSC<br>PLANE K H 0.034 0.040 0.87 1.01<br>J 0.018 0.023 0.46 0.58<br>K 0.350 0.380 8.89 9.65<br>R 0.180 0.215 4.45 5.45<br>J S 0.025 0.040 0.63 1.01<br>F<br>H V 0.035 0.050 0.89 1.27<br>Z 0.155 −−− 3.93 −−−<br>D 3 PL<br>STYLE 2:<br>G 0.13 (0.005) M T PIN 1. GATE<br>2. DRAIN<br>3. SOURCE<br>4. DRAIN<br>**----- End of picture text -----**<br>


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**NTD5807N/D** 

**7**