NVD2955T4G

NTD2955, NVD2955 

## Power MOSFET 

## **−60 V, −12 A, P−Channel DPAK** 

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. 

## **www.onsemi.com** 

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V(BR)DSS RDS(on) TYP ID MAX<br>−60 V 155 m  @ −10 V, 6 A −12 A<br>D<br>P−Channel<br>G<br>S<br>**----- End of picture text -----**<br>


## **Features** 

- Avalanche Energy Specified 

- IDSS and VDS(on) Specified at Elevated Temperature 

- Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes 

- NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [484 x 318] intentionally omitted <==**

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||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|4|
|AEC−Q101 Qualified and PPAP Capable|
|•|These Devices are Pb−Free and are RoHS Compliant|
|4|
|MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise noted)|1|
|1|[2]|
|Rating|Symbol|Value|Unit|3|2 3|
|ee|Drain−to−Source Voltage|VDSS|−60|Vdc|DPAK|IPAK|
|CASE 369C|CASE 369D|
|Gate−to−Source Voltage|
|STYLE 2|STYLE 2|
|− Continuous|VGS|±|20|Vdc|
|− Non−repetitive (tp|≤|10 ms)|VGSM|±|25|Vpk|MARKING DIAGRAMS|
|ee|[eee]|es|
|Drain Current|& PIN ASSIGNMENTS|
|DrDr− Continuous @ T− Single Pulse (tp|a|≤|=  25 10 ms)|°|C|IDMID|−12−18|AdcApk|Drain4|Drain4|
|Total Power Dissipation @ Ta =  25|°|C|PD|55|W|
|pot|Operating and Storage Temperature|TJ, Tstg|Et|−55 to|°|C|
|Range|175|
|Single Pulse Drain−to−Source Avalanche|EAS|216|mJ|
|Energy − Starting TJ = 25|°|C|
|ee|(VDD = 25 Vdc, VGS = 10 Vdc, Peak|on|1|2|3|Ln|
|Drain|
|ae|IL = 12 Apk, L = 3.0 mH, RG = 25 )|Gate|Source|ot|
|1|2|3|
|Thermal Resistance|
|− Junction−to−Case|R|JC|2.73|°|C/W|Gate|Drain|Source|
|− Junction−to−Ambient (Note 1)|R|JA|71.4|A|= Assembly Location*|
|ae|− Junction−to−Ambient (Note 2)|R|JA|100|NT2955/NTP2955|= Device Code (DPAK)|
|Maximum Lead Temperature for Soldering|TL|260|°|C|NT2955|= Device Code (IPAK)|
|Purposes, 1/8 in. from case for|Y|= Year|
|10 seconds|WW|= Work Week|
|ee|
|ee|G|= Pb−Free Package|

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Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 

1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in[2] ). 

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area =  0.412 in[2] ). 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 5 of this data sheet. 

Publication Order Number: **NTD2955/D** 

**1** 

© Semiconductor Components Industries, LLC, 2016 **July, 2016 − Rev. 15** 

**NTD2955, NVD2955** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)||||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage (Note 3)<br>(VGS= 0 Vdc, ID= −0.25 mA)<br>(Positive Temperature Coefficient)||V(BR)DSS|−60<br>−|−<br>67|−<br>−|Vdc<br>mV/°C|
|Zero Gate Voltage Drain Current<br>(VGS= 0 Vdc, VDS= −60 Vdc, TJ= 25°C)<br>(VGS= 0 Vdc, VDS= −60 Vdc, TJ= 150°C)||IDSS|−<br>−|−<br>−|−10<br>−100|�Adc|
|Gate−Body Leakage Current (VGS=±20 Vdc, VDS= 0 Vdc)||IGSS|−|−|−100|nAdc|
|**ON CHARACTERISTICS**(Note 3)|||||||
|Gate Threshold Voltage<br>(VDS= VGS, ID= −250�Adc)<br>(Negative Temperature Coefficient)||VGS(th)|−2.0<br>−|−2.8<br>4.5|−4.0<br>−|Vdc<br>mV/°C|
|Static Drain−Source On−State Resistance<br>(VGS= −10 Vdc, ID= −6.0 Adc)||RDS(on)|−|0.155|0.180|�|
|Drain−to−Source On−Voltage<br>(VGS= −10 Vdc, ID= −12 Adc)<br>(VGS= −10 Vdc, ID= −6.0 Adc,|TJ= 150°C)|VDS(on)||−1.86<br>−|−2.6<br>−2.0|Vdc|
|Forward Transconductance (VDS|= 10 Vdc, ID= 6.0 Adc)|gFS||8.0|−|Mhos|
|**DYNAMIC CHARACTERISTICS**|||||||
|Input Capacitance|(VDS= −25 Vdc, VGS= 0 Vdc,<br>F = 1.0 MHz)|Ciss|−|500|750|pF|
|Output Capacitance||Coss|−|150|250||
|Reverse Transfer Capacitance||Crss|−|50|100||
|**SWITCHING CHARACTERISTICS**(Notes 3 and 4)|||||||
|Turn−On Delay Time|(VDD= −30 Vdc, ID= −12 A,<br>VGS= −10 V, RG= 9.1�)|td(on)|−|10|20|ns|
|Rise Time||tr|−|45|85||
|Turn−Off Delay Time||td(off)|−|26|40||
|Fall Time||tf|−|48|90||
|Gate Charge|(VDS= −48 Vdc, VGS= −10 Vdc,<br>ID= −12 A)|QT|−|15|30|nC|
|||QGS|−|4.0|−||
|||QGD|−|7.0|−||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**(Note 3)|||||||
|Diode Forward On−Voltage<br>(IS= 12 Adc, VGS= 0 V)<br>(IS= 12 Adc, VGS= 0 V, TJ= 150°C)||VSD|−<br>−|−1.6<br>−1.3|−2.5<br>−|Vdc|
|Reverse Recovery Time<br>(IS= 12 A, dIS/dt = 100 A/�s ,VGS= 0 V)||trr|−|50||ns|
|||ta|−|40|−||
|||tb|−|10|−||
|Reverse Recovery Stored Charge||QRR|−|0.10|−|�C|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

3. Indicates Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

4. Switching characteristics are independent of operating junction temperature. 

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**NTD2955, NVD2955** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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25<br>TJ = 25° C VGS = -10 V -9 V<br>-8 V<br>-9.5 V<br>20<br>-7 V<br>15 -6.5 V<br>-6 V<br>10<br>-5.5 V<br>-5 V<br>5<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br> DRAIN CURRENT (A)<br>D,<br>−I<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

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0.50<br>0.45 V GS  = −10 V<br>0.40<br>0.35<br>0.30 TJ = 125° C<br>0.25<br>0.20 25 ° C<br>0.15<br>-�55° C<br>0.10<br>0.05<br>0<br>0 3 6 9 12 15 18 21 24<br>−ID, DRAIN CURRENT (AMPS)<br>) Ω<br> DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance versus Drain Current and Temperature** 

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2.0<br>1.8 VGS = −10 V<br>ID = −6 A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>-�50 -�25 0 25 50 75 100 125 150 175<br>TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance Variation with<br> DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

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24<br>22 VDS ≥  −10 V TJ = -�55° C<br>20 25° C 125° C<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>2 3 4 5 6 7 8 9 10<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 2. Transfer Characteristics<br>0.250<br>TJ = 25° C<br>0.225<br>0.200<br>0.175 V GS  = −10 V<br>0.150<br>- 15 V<br>0.125<br>0.100<br>0.075<br>0.050<br>0 3 6 9 12 15 18 21 24<br>- ID, DRAIN CURRENT (AMPS)<br>Figure 4. On−Resistance versus Drain Current<br>and Gate Voltage<br>1000<br>VGS = 0 V<br>100<br>TJ = 125° C<br>10<br>100° C<br>1<br>5 10 15 20 25 30 35 40 45 50 55 60<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br> DRAIN CURRENT (A)<br>D,<br>−I<br>) Ω<br> DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>, LEAKAGE (nA)<br>DSS<br>−I<br>**----- End of picture text -----**<br>


**Figure 6. Drain−To−Source Leakage Current versus Voltage** 

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**3** 

**NTD2955, NVD2955** 

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1200 15 60<br>VDS = 0 V VGS = 0 V T J  = 25° C ID = 12 A<br>1000 Ciss 12.5 V DS TJ = 25°C 50<br>800 Crss 10 QT 40<br>VGS<br>600 7.5 30<br>Ciss QGS QGD<br>400 5 20<br>200 C oss 2.5 10<br>C rss<br>0 0 0<br>10 5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16<br>-VGS -VDS QT, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)<br>−V<br>DS<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>, DRAIN−TO−SOURCE VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge** 

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1000<br>VDD = −30 V<br>ID = −12 A<br>V GS  = −10 V<br>TJ = 25 ° C<br>100<br>tf<br>tr<br>td(off)<br>10 td(on)<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>Figure 9. Resistive Switching Time<br>Variation versus Gate Resistance<br>100<br>VGS = −15 V<br>SINGLE PULSE<br>TC = 25 ° C<br>10<br>100 �s<br>1 ms<br>10 ms<br>1<br>dc<br>RDS(on) LIMIT<br>THERMAL LIMIT<br>PACKAGE LIMIT<br>0.1<br>0.1 1 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, DRAIN CURRENT (AMPS)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


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15<br>VGS = 0 V<br>TJ = 25 ° C<br>10<br>5<br>0<br>0 0.25 0.5 0.75 1 1.25 1.5 1.75<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage versus Current** 

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di/dt<br>IS<br>t rr<br>ta t b<br>TIME<br>t p 0.25 IS<br>IS<br>**----- End of picture text -----**<br>


**Figure 12. Diode Reverse Recovery Waveform** 

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**NTD2955, NVD2955** 

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1.0<br>D = 0.5<br>0.2<br>0.1<br>0.1 0.05 P(pk)<br>R�JC(t) = r(t) R�JC<br>D CURVES APPLY FOR POWER<br>0.02 PULSE TRAIN SHOWN<br>0.01 t1 READ TIME AT t 1<br>t 2 TJ(pk) - TC = P(pk) R�JC(t)<br>SINGLE PULSE<br>DUTY CYCLE, D = t1/t2<br>0.01<br>1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01<br>t, TIME (s)<br>r(t), NORMALIZED EFFECTIVE<br>TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTD2955G|DPAK<br>(Pb−Free)|75 Units / Rail|
|NTD2955−1G|IPAK<br>(Pb−Free)|75 Units / Rail|
|NTD2955T4G|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|NVD2955T4G*|DPAK<br>(Pb−Free)|2500 / Tape & Reel|
|SVD2955T4G*|DPAK<br>(Pb−Free)|2500 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. 

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**5** 

**NTD2955, NVD2955** 

## **PACKAGE DIMENSIONS** 

**DPAK (SINGLE GAUGE)** CASE 369C ISSUE E 

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NOTES:<br>A 1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.<br>E C 2. CONTROLLING DIMENSION: INCHES.<br>A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-<br>b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLDMENSIONS b3, L3 and Z.<br>FLASH, PROTRUSIONS, OR BURRS. MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS SHALL<br>4 NOT EXCEED 0.006 INCHES PER SIDE.<br>L3 Z 5. DIMENSIONS D AND E ARE DETERMINED AT THE<br>D DETAIL A H 6. DATUMS A AND B ARE DETERMINED AT DATUMOUTERMOST EXTREMES OF THE PLASTIC BODY.<br>1 2 3 PLANE H.<br>7. OPTIONAL MOLD FEATURE.<br>L4 NOTE 7 DIM MININCHESMAX MILLIMETERSMIN MAX<br>b2 c BOTTOM VIEW A 0.086 0.094 2.18 2.38<br>e SIDE VIEW A1 0.000 0.005 0.00 0.13<br>b b 0.025 0.035 0.63 0.89<br>TOP VIEW 0.005 (0.13) M C b2b3 0.0280.180 0.0450.215 0.724.57 1.145.46<br>c 0.018 0.024 0.46 0.61<br>c2 0.018 0.024 0.46 0.61<br>H Z Z D 0.235 0.245 5.97 6.22<br>E 0.250 0.265 6.35 6.73<br>e 0.090 BSC 2.29 BSC<br>L2 [GAUGE] PLANE C SEATINGPLANE H 0.370 0.410 9.40 10.41<br>L 0.055 0.070 1.40 1.78<br>L1 0.114 REF 2.90 REF<br>L2 0.020 BSC 0.51 BSC<br>L L3 0.035 0.050 0.89 1.27<br>A1 BOTTOM VIEW L4 −−− 0.040 −−− 1.01<br>L1 CONSTRUCTIONSALTERNATE Z 0.155 −−− 3.93 −−−<br>DETAIL A<br>ROTATED 90  CW � STYLE 2:<br>PIN 1. GATE<br>2. DRAIN<br>3. SOURCE<br>SOLDERING FOOTPRINT* 4. DRAIN<br>6.20 3.00<br>0.244 0.118<br>2.58<br>0.102<br>5.80<br>1.60 6.17<br>0.228<br>0.063 0.243<br>SCALE 3:1<br>� inches [mm] �<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**6** 

**NTD2955, NVD2955** 

## **PACKAGE DIMENSIONS** 

**IPAK** CASE 369D ISSUE C 

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B C<br>V R E<br>4<br>a<br>A<br>S<br>1 2 3<br>−T−<br>SEATING<br>PLANE K<br>J<br>F<br>H<br>D 3 PL<br>G 0.13 (0.005) M T<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>INCHES MILLIMETERS<br>Z DIM MIN MAX MIN MAX<br>A 0.235 0.245 5.97 6.35<br>B 0.250 0.265 6.35 6.73<br>C 0.086 0.094 2.19 2.38<br>D 0.027 0.035 0.69 0.88<br>E 0.018 0.023 0.46 0.58<br>F 0.037 0.045 0.94 1.14<br>G 0.090 BSC 2.29 BSC<br>H 0.034 0.040 0.87 1.01<br>J 0.018 0.023 0.46 0.58<br>K 0.350 0.380 8.89 9.65<br>R 0.180 0.215 4.45 5.45<br>S 0.025 0.040 0.63 1.01<br>V 0.035 0.050 0.89 1.27<br>Z 0.155 −−− 3.93 −−−<br>STYLE 2:<br>PIN 1. GATE<br>2. DRAIN<br>3. SOURCE<br>4. DRAIN<br>**----- End of picture text -----**<br>


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