NVBLS0D5N04M8TXG.

## NVBLS0D5N04M8 

## _Product Preview_ Power MOSFET 

## **40 V, 300 A, 0.57 m** Q **Single N−Channel** 

## **Features** 

## **www.onsemi.com** 

- Typical RDS(on) = 0.46 m Q at VGS = 10 V, ID = 80 A 

- Typical Qg(tot) = 220 nC at VGS = 10 V, ID = 80 A 

- UIS Capability 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** TJ = 25 ° C unless otherwise noted 

||~~ee~~|~~ee~~||
|---|---|---|---|
|**Parameter**<br>~~ee~~|**Symbol**<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|**Ratings**<br>~~ee~~<br>~~ee~~<br>~~ee~~|**Units**<br>~~ee~~|
|Drain−to−Source Voltage<br>~~ee~~|VDSS<br>~~ee ~~<br>~~ee~~<br>~~ee ee~~|40<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage|VGS<br>~~ee ee~~|±20<br>~~ee~~|V|
|Drain Current − Continuous (VGS= 10)<br>(Note 1)<br>TC= 25°C|ID|300|A|
|Pulsed Drain Current<br>TC= 25°C||See<br>Figure 4||
|Single Pulse Avalanche Energy (Note 2)<br>~~SS~~|EAS<br>~~ee~~|1064<br>~~ee~~|mJ<br>~~ee~~|
|Power Dissipation<br>~~SS~~|PD<br>~~ee~~<br>~~ee~~|429<br>~~ee~~|W<br>~~ee~~|
|Derate Above 25°C<br>~~SS~~||2.86<br>~~ee~~<br>~~ee~~|W/°C<br>~~ee~~|
|Operating and Storage Temperature<br>~~SS ~~<br>~~ee~~|TJ, TSTG<br> ~~ee~~<br>~~ee~~<br>~~ee~~|−55 to +175<br>~~ee~~<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~|
|Thermal Resistance, Junction−to−Case|R JC<br>~~ee~~|0.35<br>~~ee~~|°C/W|
|Maximum Thermal Resistance,<br>Junction−to−Ambient<br>(Note 3)<br>~~i~~|R JA<br>~~i~~|43<br>~~i~~|°C/W<br>~~i~~|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**MO−299A CASE 100CU** 

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## **ORDERING INFORMATION** 

|**Device**|**Package**|**Package**<br>**Marking**|
|---|---|---|
|NVBLS0D5N04M8TXG|NVBLS0D5N04M8TXG MO−299A<br>(Pb−Free)|MO−299A<br>(Pb−Free)<br>0D5N04M8|



1. Current is limited by bondwire configuration. 

2. Starting TJ = 25 ° C, L = 0.3 mH, IAS = 84 A, VDD = 40 V during inductor charging and VDD = 0 V during time in avalanche. 

3. R (3) JA is the sum of the junction−to−case and case−to−ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. R (3) JC is guaranteed by design, while R (3) JA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in[2] pad of 2 oz copper. 

This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. 

Publication Order Number: **NVBLS0D5N04M8/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **April, 2018 − Rev. P0** 

**NVBLS0D5N04M8** 

**Table 1. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Table 1.**|**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless otherwise noted)|= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−to−Source Breakdown Voltage|ID= 250�A, VGS= 0 V||40|−|−|V|
|IDSS|Drain−to−Source Leakage Current|VDS= 40 V,<br>VGS= 0 V|TJ= 25°C|−|−|1|�A|
||||TJ= 175°C (Note 4)|−|−|1|mA|
|IGSS|Gate−to−Source Leakage Current|VGS=|±20 V|−|−|±100|nA|
|**ON CHARACTERISTICS**||||||||
|VGS(th)|Gate−to−Source Threshold Voltage|VGS= VDS, ID= 250�A||2.0|3.0|4.0|V|
|RDS(on)|Drain−to−Source On Resistance|ID= 80 A, VGS= 10 V|TJ= 25°C|−|0.46|0.57|m�|
|**DYNAMIC CHARACTERISTICS**||||||||
|Ciss|Input Capacitance|VDS= 25 V, VGS= 0 V, f = 1 MHz||−|15900|−|pF|
|Coss|Output Capacitance|||−|4000|−|pF|
|Crss|Reverse Transfer Capacitance|||−|600|−|pF|
|Rg|Gate Resistance|f = 1 MHz||−|2.6|−|�|
|Qg(ToT)|Total Gate Charge at 10 V|VGS= 0 to 10 V|VDD= 20 V<br>ID= 80 A|−|220|296|nC|
|Qg(th)|Threshold Gate Charge|VGS= 0 to 2 V||−|29|39|nC|
|Qgs|Gate−to−Source Gate Charge|||−|73|−|nC|
|Qgd|Gate−to−Drain “Miller” Charge|||−|41|−|nC|
|**SWITCHING CHARACTERISTICS**||||||||
|ton|Turn−On Time|VDD= 20 V, ID= 80 A,<br>VGS= 10 V, RGEN= 6�||−|−|221|ns|
|td(on)|Turn−On Delay|||−|54|−|ns|
|tr|Rise Time|||−|82|−|ns|
|td(off)|Turn−Off Delay|||−|106|−|ns|
|tf|Fall Time|||−|52|−|ns|
|toff|Turn−Off Time|||−|−|215|ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|VSD|Source−to−Drain Diode Voltage|ISD= 80 A, VGS= 0 V||−|−|1.25|V|
|||ISD= 40 A, VGS= 0 V||−|−|1.2|V|
|trr|Reverse−Recovery Time|IF= 80 A, dISD/dt= 100 A/�s,<br>VDD= 32 V||−|119|133|ns|
|Qrr|Reverse−Recovery Charge|||−|228|274|nC|



4. The maximum value is specified by design at TJ = 175 ° C. Product is not tested to this condition in production. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

**NVBLS0D5N04M8** 

## **Typical Characteristics** 

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1.2 700<br>CURRENT LIMITED VGS = 10V<br>1.0 600 BY PACKAGE<br>500 CURRENT LIMITED<br>0.8 BY SILICON<br>400<br>0.6<br>300<br>0.4<br>200<br>0.2 100<br>0.0 0<br>0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 200<br>TC, CASE TEMPERATURE( [o] C) TC, CASE TEMPERATURE( [o] C)<br>Figure 1.  Normalized Power Dissipation vs. Case Figure 2.  Maximum Continuous Drain Current vs.<br>Temperature Case Temperature<br>2<br>DUTY CYCLE − DESCENDING ORDER<br>1<br>D = 0.50<br>      0.20<br>      0.10 P DM<br>      0.05<br>      0.02<br>0.1       0.01 t1<br>t2<br>NOTES:<br>DUTY FACTOR: D = t 1/t2<br>SINGLE PULSE PEAK T J  = P DM  x Z � JA  x R � JA  + T C<br>0.01<br>10−5 10−4 10−3 10−2 10−1 100 101<br>t, RECTANGULAR  PULSE DURATION(s)<br>Figure 3. Normalized Maximum Transient Thermal Impedance<br>, DRAIN CURRENT (A)<br>ID<br>POWER DISSIPATION MULTIPLIER<br>JC �<br>IMPEDANCE, Z<br>NORMALIZED THERMAL<br>**----- End of picture text -----**<br>


**Figure 2.  Maximum Continuous Drain Current vs. Case Temperature** 

**Figure 1.  Normalized Power Dissipation vs. Case Temperature** 

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10000<br>VGS = 10V T C  = 25 [o] C<br>FOR TEMPERATURES<br>ABOVE 25 [o] C DERATE PEAK<br>CURRENT AS FOLLOWS:<br>I = I 2 175 − T C<br>150<br>1000<br>SINGLE PULSE<br>100<br>10−5 10−4 10−3 10−2 10−1 100 101<br>t, RECTANGULAR PULSE DURATION(s)<br>PEAK CURRENT (A)<br>,<br>IDM<br>**----- End of picture text -----**<br>


**Figure 4.  Peak Current Capability** 

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**3** 

**NVBLS0D5N04M8** 

## **Typical Characteristics** 

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10000<br>2000<br>If R = 0<br>1000 tAV = (L)(IAS)/(1.3 * RATED BVDSS − V DD)<br>If R  ≠  0<br>1000 t AV  = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS  − V DD ) +1]<br>100<br>100us<br>100<br>10 STARTING TJ = 25 [o] C<br>OPERATION IN THIS AREA MAY BE 1ms<br>LIMITED BY rDS(on) 10<br>1 SINGLE PULSET J = MAX RATED 100ms10ms STARTING TJ = 150 [o] C<br>T C  = 25 [o] C<br>0.1 1 0.001 0.01 0.1 1 10 100 1000 10000<br>0.1 1 10 100 200 tAV, TIME IN AVALANCHE (ms)<br>VDS, DRAIN TO SOURCE VOLTAGE (V)<br>NOTE: Refer to Fairchild Application Notes AN7514 and AN7515<br>Figure 5. Forward Bias Safe Operating Area Figure 6.  Unclamped Inductive Switching<br>Capability<br>300 400<br>PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX 100 VGSGS = 0 V<br>240 V DD  = 5V<br>180 10 TJJ = 175 [[o]] C TJ = 25J = 25 = 25 [[ o]] C<br>TJ = 25J = 25 = 25 [[o]] C<br>120<br>TJ = −55J = −55 = −55 [[o]] C<br>TJ = 175J = 175 = 175 [[o]] C 1<br>60<br>0 0.1<br>2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)SD, BODY DIODE FORWARD VOLTAGE (V), BODY DIODE FORWARD VOLTAGE (V)<br>, DRAIN CURRENT (A)<br> ID , AVALANCHE CURRENT (A)IAS<br>, DRAIN CURRENT (A)<br>IDD , REVERSE DRAIN CURRENT (A)ISISS<br>**----- End of picture text -----**<br>


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300 400<br>PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX 100 VGSGS = 0 V<br>240 V DD  = 5V<br>180 TJJ = 175 [[o]] C TJ = 25J = 25 = 25 [[ o]] C<br>10<br>TJ = 25J = 25 = 25 [[o]] C<br>120<br>TJ = −55J = −55 = −55 [[o]] C<br>TJ = 175J = 175 = 175 [[o]] C 1<br>60<br>0 0.1<br>2 3 4 5 6 0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VGS, GATE TO SOURCE VOLTAGE (V)GS, GATE TO SOURCE VOLTAGE (V), GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)SD, BODY DIODE FORWARD VOLTAGE (V), BODY DIODE FORWARD VOLTAGE (V)<br>Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics<br>400 350<br>VGS<br>350300 15V  Top 10V8V 300 5V V 15V  Top GS<br>7V 250 10V<br>250 6V5.5V  8V7V 5.5V<br>5V     Bottom 200 6V<br>200 5.5V<br>150 5V     Bottom<br>150 5V<br>100 100<br>50 80 � s PULSE WIDTH 50 80  � s PULSE WIDTH<br>Tj=25 [o] C Tj=175 [o] C<br>0 0<br>0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0<br>VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>IDD<br>, REVERSE DRAIN CURRENT (A)ISISS<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>**----- End of picture text -----**<br>


**Figure 9. Saturation Characteristics** 

**Figure 10. Saturation Characteristics** 

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**4** 

**NVBLS0D5N04M8** 

## **Typical Characteristics** 

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5<br>ID  = 80A PULSE DURATION = 80 � s<br>DUTY CYCLE = 0.5% MAX<br>4<br>3<br>TJ = 175 [o] C<br>TJ = 25 [o] C<br>2<br>1<br>0<br>2 4 6 8 10<br>VGS, GATE TO SOURCE VOLTAGE (V)<br>Figure 11. RDSON vs. Gate Voltage<br>1.5<br>VGS  = V DS<br>ID = 250  � A<br>1.2<br>0.9<br>0.6<br>0.3<br>0.0<br>−80 −40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE( [o] C)<br>) �<br>m<br>, DRAIN TO SOURCE<br>ON−RESISTANCE (<br>rDS(on)<br>NORMALIZED GATE<br>THRESHOLD VOLTAGE<br>**----- End of picture text -----**<br>


**Figure 13. Normalized Gate Threshold Voltage vs. Temperature** 

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100000<br>Ciss<br>10000<br>C oss<br>1000<br>Crss<br>f = 1MHz<br>V GS  = 0V<br>100<br>0.1 1 10 100<br>VDS , DRAIN TO SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 15. Capacitance vs. Drain to Source Voltage** 

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2.0<br>PULSE DURATION = 80 � s<br>1.8 DUTY CYCLE = 0.5% MAX<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br> ID = 80A<br>0.6 V GS  = 10V<br>0.4<br>−80 −40 0 40 80 120 160 200<br>TJ , JUNCTION TEMPERATURE( [o] C)<br>Figure 12.  Normalized RDSON vs. Junction<br>Temperature<br>1.10<br>ID = 1mA<br>1.05<br>1.00<br>0.95<br>0.90<br>−80 −40 0 40 80 120 160 200<br>TJ, JUNCTION TEMPERATURE ( [o] C)<br>NORMALIZED<br> DRAIN TO SOURCE ON−RESISTANCE<br>BREAKDOWN VOLTAGE<br>NORMALIZED DRAIN TO SOURCE<br>**----- End of picture text -----**<br>


**Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature** 

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10<br>I D = 80A<br>VDD =16V<br>8<br>VDD = 20V<br>6 V DD  = 24V<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200 220<br>Qg ,  GATE CHARGE(nC)<br>, GATE TO SOURCE VOLTAGE(V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 16. Gate Charge  vs. Gate to Source Voltage** 

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**5** 

**NVBLS0D5N04M8** 

## **PACKAGE DIMENSIONS** 

**H−PSOF8L 11.68x9.80** CASE 100CU ISSUE O 

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**NVBLS0D5N04M8** 

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