NVBLS0D5N04CTXG

MOSFET - Power, Single N-Channel, TOLL 

## 40 V, 0.57 m 300 A 

## NVBLS0D5N04C 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

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- Low QG and Capacitance to Minimize Driver Losses 

- AEC−Q101 Qualified and PPAP Capable 

- Small Footprint (TOLL) for Compact Design 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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V(BR)DSS RDS(ON) MAX ID MAX<br>40 V 0.57 m  @ 10 V 300 A<br>eeee ee<br>**----- End of picture text -----**<br>


## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|||
|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage<br>~~ee~~<br>~~ee~~|||VDSS<br>~~ee~~<br>~~ee~~<br>e**e**<br>|40<br>~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage<br>~~ee~~<br>~~ee~~|||VGS<br>~~ee ~~<br>~~ee~~<br>e**e**<br>|+20/−16<br> ~~ee~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain<br>Current R JC<br>(Notes 1, 3)<br>~~ee~~|Steady<br>State<br> <br>~~ee~~|TC= 25°C<br>~~e~~|ID<br>e**e**<br>~~e~~|300<br>~~ee~~|A|
|||TC= 100°C<br>~~e~~||300<br>~~ee~~||
|(Notes 1, 3)<br>Power Dissipation<br>R JC(Note 1)<br>~~ee ~~<br>~~a~~||TC= 25°C<br> ~~e~~<br>~~ee~~|PD<br>e**e** <br>~~e~~<br>~~ee~~|198.4<br> ~~ee~~<br>~~ee~~|W<br>~~ee~~|
|||TC= 100°C<br>~~ee~~||97.4<br>~~ee~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2, 3)<br>~~a ~~<br>~~ee~~<br>~~a ee~~|Steady<br>State<br> ~~ee~~<br>~~ee~~<br>~~pe~~<br>~~ee~~<br>~~|~~|TA= 25°C<br>~~ee ~~<br>~~ee~~<br>~~pe~~<br>|ID<br> ~~ee~~<br>~~ee~~<br><br>~~ee~~|65<br>~~ee~~<br>~~ee~~<br>~~|~~<br>|A<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|||TA= 100°C<br>~~ee~~<br>~~pe~~<br>~~ee~~||46<br>~~ee~~<br>~~|~~<br>~~ee~~||
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~a ee~~||TA= 25°C<br>~~pe~~<br>~~ee~~<br>~~|~~|PD<br> <br>~~ee~~|4.3<br>~~|~~<br>~~ee~~<br>~~Se~~|W<br>~~ee~~|
|||TA= 100°C<br>~~pe ~~<br>~~ee~~<br>~~|~~||2.1<br> ~~|~~<br>~~ee~~<br>~~Se~~||
|Pulsed Drain Current<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~ee ~~<br>~~|~~||IDM<br> ~~ee~~|4700<br>~~ee~~<br>~~Se~~|A<br>~~ee~~|
|Operating Junction and Storage Temperature<br>Range|||TJ, Tstg|−55 to<br>+175|°C|
|Source Current (Body Diode)|||IS|170|A|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 55 A, L = 1 mH)|||EAS|1512|mJ|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)|||TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

~~ee~~ Junction−to−Case − Steady State **Parameter Symbol** R ~~ee~~ JC **Value** 0.77 ~~ee~~ ° **Unit** C/W ~~jjee~~ Junction−to−Ambient − Steady State (Note 2) ~~ee~~ R JA 35 _ 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration. 

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D (9)<br>G (1)<br>S (2 − 8)<br>**----- End of picture text -----**<br>


**N−CHANNEL MOSFET** 

**H−PSOF8L CASE 100CU** 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NVBLS0D5N04CTXG|NVBLS0D5N04CTXG<br>H−PSOF8L<br>(Pb−Free)|2000 / Tape<br>& Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

2. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. 

Publication Order Number: **NVBLS0D5N04C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **June, 2020 − Rev. 0** 

**NVBLS0D5N04C** 

**Table 1. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Table 1. ELECTRICAL CHARACTERIS**|**TICS**(TJ= 2|5°C unless otherwise noted)|5°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|ID= 250�A, VGS= 0 V||40|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||21.3||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VDS= 40 V, VGS= 0 V|TJ= 25°C|||1|�A|
||||TJ= 175°C|||1|mA|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|= +20/−16 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(th)|VGS= VDS, ID= 475�A||2|2.8|4|V|
|Threshold Temperature Coefficient|VGS(th)/TJ||||−7.4||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 50 A|||0.5|0.57|m�|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**||||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 25 V, f = 1 MHz|||12600||pF|
|Output Capacitance|Coss||||6705||pF|
|Reverse Transfer Capacitance|Crss||||227||pF|
|Gate Resistance|Rg|VGS= 0.5 V, f = 1 MHz|||1.8||�|
|Total Gate Charge|QG(tot)|VGS= 10 V, VDS= 20 V, ID= 50 A|||185||nC|
|Threshold Gate Charge|QG(th)|VGS= 0 to 2 V|||22||nC|
|Gate−to−Source Gate Charge|Qgs|VDD= 32 V, ID= 50 A|||48||nC|
|Gate−to−Drain “Miller” Charge|Qgd||||38||nC|
|Plateau Voltage|VGP||||4.2||V|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDD= 20 V,<br>ID= 50 A, RGEN= 6�|||40||ns|
|Turn−On Rise Time|tr||||84||ns|
|Turn−Off Delay Time|td(off)||||164||ns|
|Turn−Off Fall Time|tf||||81||ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Source−to−Drain Diode Voltage|VSD|ISD= 50 A, VGS= 0 V|||0.76|1.2|V|
|Reverse Recovery Time|trr|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 50 A|||108||ns|
|Charge Time|ta||||62||ns|
|Discharge Time|tb||||46||ns|
|Reverse Recovery Charge|Qrr||||288||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

4. Pulse Test: pulse width ≤ 300 � s, duty cycle ≤ 2%. 

5. Switching characteristics are independent of operating junction temperatures 

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**NVBLS0D5N04C** 

## **TYPICAL CHARACTERISTICS** 

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1200 1200<br>10 V to 8 V VGS = 7.0 V VDS = 5 V<br>900 900<br>VGS = 6.0 V<br>600 600<br>TJ = 25 ° C<br>300 300<br>VGS = 5.0 V<br>TJ = 175 ° C<br>TJ = −55 ° C<br>0 0<br>0 0.5 1.0 1.5 2.0 2 3 4 5 6 7 8<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>30 1.5<br>ID = 50 A TJ = 25 ° C<br>24 1.2<br>18 0.9<br>VGS = 6 V<br>12 0.6<br>VGS = 10 V<br>TJ = 25 ° C<br>6 0.3<br>0 TJ = 175 ° C 0<br>3 4 5 6 7 8 9 10 0 50 100 150 200 250 300<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.71.8 VGS = 10 V 1000 TJ = 175 ° C<br>1.6 ID = 50 A 100 TJ = 150 ° C<br>1.5 TJ = 125 ° C<br>10<br>1.4<br>1.3 TJ = 85 ° C<br>1<br>1.2<br>1.1<br>0.1<br>1.0 TJ = 25 ° C<br>0.9 0.01<br>0.8 VGS = 0 V<br>0.7 0.001<br>−75 −50 −25 0 25 50 75 100 125 150 175 200 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) �<br>) �<br>, ON−RESISTANCE (m<br>DS(on)<br>R<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>A)<br>�<br>, NORMALIZED DRAIN−TO−<br>SOURCE ON−RESISTANCE<br>DS(on)<br>R , REVERSE LEAKAGE CURRENT (<br>IDSS<br>**----- End of picture text -----**<br>


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**NVBLS0D5N04C** 

## **TYPICAL CHARACTERISTICS** 

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100K 10<br>Q G(tot)<br>CISS<br>10K 8<br>COSS<br>1K 6<br>CRSS Q GS Q GD<br>100 4<br>10 Vf = 1 MHz GS  = 0 V 2 ITD J  = 50 A= 25 ° C<br>TJ = 25 ° C V DS  = 32 V<br>1 0<br>0.1 1 10 40 0 40 80 120 160 200<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>1000 300<br>VGS = 10 V VGS = 0 V<br>VDS = 20 V<br>I D  = 50 A 30<br>3<br>td(off)<br>100<br>0.3<br>t r TJ = 175 ° C<br>tf td(on)<br>0.03<br>TJ = 25 ° C TJ = −55 ° C<br>10 0.003<br>1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2<br>RG, GATE RESISTANCE ( � ) VSD, BODY DIODE FORWARD VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>6000 400<br>1000<br>10  � s<br>100<br>100  � s TJ(initial) = 25 ° C<br>100<br>Operation in this<br>10 area may be limit-ed by package TJ(initial) = 150 ° C<br>1 ms 10<br>10 ms<br>1 Operation in this - 100 ms<br>area may be limit<br>ed by RDS(on)<br>0.1 1<br>0.1 1 10 100 0.001 0.01 0.1 1 10 100 1K 10K<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, SWITCHING TIME (ns)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>D<br>−I , AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br>


**Figure 11. Forward Biased Safe Operating Area** 

**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

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**NVBLS0D5N04C** 

## **TYPICAL CHARACTERISTICS** 

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200<br>160<br>120<br>80<br>40<br>TJ = 25 ° C<br>0<br>0 10 20 30 40 50<br>ID, DRAIN−TO−SOURCE CURRENT (A)<br>Figure 13. GFS vs. ID<br>1<br>Duty Cycle = 0.5<br>0.2<br>0.1 0.1<br>0.05<br>0.02<br>0.01 0.01<br>Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (s)<br> (S)<br>FS<br>G<br>, EFFECTIVE TRANSIENT<br>THERMAL IMPEDANCE<br>JC<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 14. Transient Thermal Impedance** 

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**NVBLS0D5N04C** 

## **PACKAGE DIMENSIONS** 

**H−PSOF8L 11.68x9.80** CASE 100CU ISSUE O 

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**NVBLS0D5N04C** 

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