NVBLS001N06C

## MOSFET - Power, Single N-Channel, TOLL 60 V, 0.9 m 422 A 

## NVBLS001N06C 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

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- Low QG and Capacitance to Minimize Driver Losses 

- Lowers Switching Noise/EMI 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

|**V(BR)DSS**|**RDS(ON) MAX**<br>~~ee~~|**ID MAX**<br>~~ee~~<br>~~ee~~|
|---|---|---|
|60 V<br>~~ee~~|0.9 m @ 10 V<br>~~ee~~<br>~~ee~~|422 A<br>~~ee~~<br>~~ee~~<br>~~ee~~|



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D<br>G<br>S<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

||||~~Gs Ge~~|~~Ge~~|~~ee~~|
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|||**Symbol**<br>~~es~~<br>~~Gs Ge~~<br>~~ee Ge~~|**Value**<br>~~es~~<br>~~Ge~~<br>~~Ge~~|**Unit**<br>~~es~~<br>~~ee~~|
|Drain−to−Source Voltage<br>~~es~~|||VDSS<br>~~Gs Ge~~<br>~~es~~<br>~~ee Ge~~<br>~~Ds ee~~|60<br>~~Ge ~~<br>~~es~~<br>~~Ge~~<br>~~ee~~|V<br> ~~ee~~<br>~~es~~|
|Gate−to−Source Voltage<br>~~es~~|||VGS<br>~~ee Ge~~<br>~~es~~<br>~~Ds ee~~|±20<br>~~Ge~~<br>~~es~~<br>~~ee~~|V<br>~~es~~|
|Continuous Drain<br>Current R JC(Note 2)<br>~~es~~|Steady<br>State<br>~~es~~<br>~~||~~<br>~~|~~<br>~~|~~|TC= 25°C<br>~~es~~|ID<br>~~es~~<br>~~Ds ee~~<br>~~||~~|422<br>~~es~~<br>~~ee~~|A<br>~~es~~<br>~~||~~|
|||C<br>TC= 100°C<br>~~||~~||298<br>~~||~~||
|Power Dissipation<br>R JC(Note 2)<br>~~Poe|~~||TC= 25°C<br>~~||~~<br>~~|~~<br>|PD<br>~~||~~<br>~~|~~<br>~~|~~<br>~~YR~~|284<br>~~||~~<br>~~|~~<br>~~|~~<br>|W<br>~~||~~<br>~~YR~~|
|||TC= 100°C<br>~~|~~<br>~~-~~||142<br>~~|~~<br>~~|~~<br>~~YR~~||
|Continuous Drain<br>Current R JA<br>(Notes 1, 2)<br>~~Poe|~~<br>~~ef~~|Steady<br>State<br>~~|~~<br>~~| ~~<br>~~cE~~|TA= 25°C<br>~~|~~<br>~~-~~<br>~~|~~|ID<br>~~|~~<br>~~|~~<br>~~YR~~<br>~~|~~|51<br>~~|~~<br>~~|~~<br>~~YR~~<br>~~||~~|A<br>~~YR~~|
|||TA= 100°C<br>~~-~~<br>~~|~~<br>~~cE~~||36<br>~~|~~<br>~~YR~~<br>~~||~~||
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~|~~<br>~~ef~~||TA= 25°C<br> ~~- ~~<br>~~|~~<br>~~cE~~|PD<br> ~~YR~~<br>~~|~~|4.2<br>~~YR~~<br>~~||~~|W<br>~~YR~~|
|||TA= 100°C<br>~~|~~<br>~~cE~~||2.1<br>~~| |~~||
|Pulsed Drain Current|TA= 25°C, tp= 10 s<br>~~cE~~||IDM|900|A|
|Operating Junction and Storage Temperature<br>Range|||TJ, Tstg|−55 to<br>+175|°C|
|Source Current (Body Diode)<br>~~ee~~|||IS<br>~~ee~~|236<br>~~ee~~|A<br>~~ee~~|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL(pk)= 39 A)<br>~~ee~~|||EAS<br>~~ee~~|1640<br>~~ee~~|mJ<br>~~ee~~|
|Lead Temperature Soldering Reflow for Solder-<br>ing Purposes (1/8″from case for 10 s)|||TL|260|°C|



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H−PSOF8L<br>CASE 100CU<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NVBLS001N06C|H−PSOF8L<br>(Pb−Free)|2000 / Tape &<br>Reel|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

~~es~~ **Parameter Symbol** ~~es~~ **Value** ~~es~~ **Unit** Junction−to−Case − Steady State (Note 2) R JC 0.53 ° C/W ~~es|__|~~ Junction−to−Ambient − Steady State (Note 2) ~~et~~ R JA ~~ee~~ 36 1. Surface−mounted on FR4 board using a 1 in[2] pad size, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

Publication Order Number: **NVBLS001N06C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **July, 2021 − Rev. 2** 

**NVBLS001N06C** 

**Table 1. ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Table 1. ELECTRICAL CHARACTERIS**|**TICS**(TJ= 2|5°C unless otherwise noted)|5°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**||**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|ID= 250�A, VGS= 0 V||60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= 562�A, ref to 25°C|||26||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VDS= 60 V,<br>VGS= 0 V|TJ= 25°C|||10|�A|
||||TJ= 125°C|||100|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(th)|VGS= VDS, ID= 562�A||2.0|2.8|4.0|V|
|Negative Threshold Temperature Coefficient|VGS(th)/TJ|ID= 562�A, ref to 25°C|||9.9||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 80 A|||0.75|0.9|m�|
|Forward Transconductance|gFS|VDS= 5 V, ID= 80 A|||290||S|
|**CHARGES & CAPACTIANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, VDS= 30 V, f = 10 kHz|||11575||pF|
|Output Capacitance|Coss||||5973||pF|
|Reverse Transfer Capacitance|Crss||||76||pF|
|Total Gate Charge|QG(tot)|VGS= 10 V, VDS= 30 V,<br>ID= 80 A|||143||nC|
|Threshold Gate Charge|QG(th)||||31||nC|
|Gate−to−Source Charge|Qgs||||54||nC|
|Gate−to−Drain Charge|Qgd||||13||nC|
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDS= 30 V,<br>ID= 80 A, RG= 6�|||34||ns|
|Rise Time|tr||||53||ns|
|Turn−Off Delay Time|td(off)||||119||ns|
|Fall Time|tf||||91||ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|IS= 80 A, VGS= 0 V|TJ= 25°C||0.79|1.2|V|
|||IS= 80 A, VGS= 0 V|TJ= 125°C||0.66||V|
|Reverse Recovery Time|trr|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 56 A|||120||ns|
|Charge Time|ta||||60||ns|
|Discharge Time|tb||||60||ns|
|Reverse Recovery Charge|Qrr||||322||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures 

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**2** 

**NVBLS001N06C** 

## **TYPICAL CHARACTERISTICS** 

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1200 500<br>10 V & 8 V 7.0 V<br>1100 6.0 V VDS = 5 V<br>1000<br>400<br>900<br>800<br>300<br>700<br>600<br>500 VGS = 5.0 V 200<br>400 TJ = 25 ° C<br>300<br>4.5 V 100<br>200 TJ = 125 ° C<br>100 TJ = −55 ° C<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>3.0 3.0<br>2.75 T J = 25 ° C 2.75<br>ID = 80 A<br>2.5 2.5<br>2.25 2.25<br>2.0 2.0<br>1.75 1.75 V GS  = 5 V VGS = 5.5 V<br>1.5 1.5<br>1.25 1.25<br>1.0 1.0 VGS = 6 V<br>0.75 0.75 VGS = 7 V<br>VGS = 10 V<br>0.5 0.5<br>4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10 0 50 100 150 200 250 300 350 400<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.8 1M<br>1.7 V GS  = 10 V<br>1.6 ID = 80 A 100K T J  = 175 ° C<br>1.5 TJ = 150 ° C<br>1.4<br>1.3 10K TJ = 125 ° C<br>1.2<br>1.1 1K TJ = 85 ° C<br>1.0<br>0.9 100<br>0.8<br>VGS = 0 V<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−SOURCE RESISTANCE (m , DRAIN−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, NORMALIZED DRAIN− , LEAKAGE CURRENT (nA)<br>DS(on) SOURCE ON−RESISTANCE<br>R IDSS<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**3** 

**NVBLS001N06C** 

## **TYPICAL CHARACTERISTICS** 

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100K<br>10K<br>Ciss<br>C oss<br>1K<br>100<br>VGS = 0 V Crss<br>TJ = 25 ° C<br>f = 10 kHz<br>10<br>0 10 20 30 40 50 60<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Capacitance Variation<br>1000<br>VGS = 10 V<br>VDS = 30 V<br>ID = 80 A tr<br>td(off)<br>100 td(on)<br>tf<br>10<br>1 10 100<br>CAPACITANCE (pF)<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


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RG, GATE RESISTANCE ( � )<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

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11<br>10 QT<br>9<br>8<br>7<br>QGS QGD<br>6<br>5<br>4<br>3<br>2 VDS = 30 V<br>1 TIDJ = 80 A = 25 ° C<br>0<br>0 20 40 60 80 100 120 140 160<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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QG, TOTAL GATE CHARGE (nC)<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source Voltage vs. Total Gate Charge** 

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1000<br>VGS = 0 V<br>100<br>10<br>TJ = 175 ° C<br>1<br>0.1 TJ = 150 ° C TJ = 25 ° C TJ = −55 ° C<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

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1000 1000<br>100 10  � s<br>100<br>TJ(initial) = 25 ° C<br>10<br>Single Pulse 0.5 ms TJ(initial) = 100 ° C<br>TC = 25 ° C 1 ms 10<br>1 VGS ≤  10 V 10 ms<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.1 1<br>0.1 1 10 100 1000 0.0001 0.001 0.01<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s)<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Avalanche Characteristics** 

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**4** 

**NVBLS001N06C** 

## **TYPICAL CHARACTERISTICS** 

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100<br>50% Duty Cycle<br>10 20%<br>10%<br>1 5%<br>2%<br>1%<br>0.1<br>0.01<br>R � JA Steady State = 36 ° C/W<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Characteristics (Junction−to−Ambient)** 

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**5** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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H−PSOF8L 11.68x9.80<br>CASE 100CU<br>ISSUE B<br>DATE 20 MAY 2022<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>AYWWZZ<br>XXXXXXXX<br>XXXXXXXX<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>ZZ = Assembly Lot Code<br>XXXX = Specific Device Code<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ = ”, may<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98AON13813G** 

## **H−PSOF8L 11.68x9.80** 

## **PAGE 1 OF 1** 

## **DESCRIPTION:** 

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