NVBGS4D1N15MC

MOSFET - Single N-Channel 150 V, 4.1 m 185 A 

## NVBGS4D1N15MC 

## **Features** 

- Low R to Minimize Conduction Losses DS(on) 

- Low QG and Capacitance to Minimize Driver Losses 

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- Lowers Switching Noise/EMI 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|150 V|4.1 m @ 10 V|185 A|
||4.7 m @ 8 V||



- Power Tools, Battery Operated Vacuums 

- UAV/Drones, Material Handling 

- BMS/Storage, Home Automation 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

||||~~es~~|~~es~~||
|---|---|---|---|---|---|
|**Parameter**<br>~~es~~|||**Symbol**<br>~~es~~<br>~~es~~<br>~~es~~|**Value**<br>~~es~~<br>~~es~~<br>~~es~~|**Unit**<br>~~es~~|
|Drain−to−Source Voltage<br>~~ee~~|||VDSS<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|150<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage<br>~~es~~|||VGS<br>~~es~~<br>~~es~~<br>~~es~~|±20<br>~~es~~<br>~~es~~<br>~~ee~~|V<br>~~es~~|
|Continuous Drain<br>Current R JC<br>(Note 2)<br>~~oo~~|Steady<br>State|TC= 25°C|ID<br>~~es ~~<br>~~P|~~|185<br> ~~ee~~<br>~~P||]~~|A<br>~~|]~~|
|Power Dissipation<br>R JC(Note 2)<br>~~oo~~|||PD<br>~~P|~~|316<br>~~P||]~~|W<br>~~|]~~|
|Continuous Drain<br>Current R JA<br>(Notes 1, 2)<br>~~oo~~|Steady<br>State<br>~~ee~~|TA= 25°C<br>~~ee~~|ID<br>~~P|~~|20<br>~~P| |]~~|A<br>~~|]~~|
|Power Dissipation<br>R JA(Notes 1, 2)<br>~~ee~~|||PD<br>~~a~~|3.7|W|
|Pulsed Drain Current<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~ee~~||IDM<br>~~a~~|2564|A|
|Operating Junction and Storage Temperature<br>Range<br>~~ee~~<br>~~ee~~|||TJ, Tstg<br>~~a~~|−55 to<br>+175|°C|
|Source Current (Body Diode)<br>~~ee ~~<br>~~ee~~|||IS<br> ~~a~~|263|A|
|Single Pulse Drain−to−Source Avalanche<br>Energy (IL= 81.5 Apk, L = 0.1 mH)<br>~~ee~~|||EAS|332|mJ|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface−mounted on FR4 board using a 1 in[2] , 1 oz. Cu pad. 

2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

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D (TAB)<br>G (Pin 1)<br>S (Pins 2,3,4,5,6,7)<br>**----- End of picture text -----**<br>


**N−CHANNEL MOSFET** 

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MARKING<br>DIAGRAM<br>**----- End of picture text -----**<br>


XXXXXXXXX AYWWG **D[2] PAK7 CASE 418AY** XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NVBGS4D1N15MC|D2PAK7<br>(Pb−Free)|800 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NVBGS4D1N15MC/D** 

**1** 

© Semiconductor Components Industries, LLC, 2019 **December, 2019 − Rev. 0** 

**NVBGS4D1N15MC** 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Case − Steady State (Note 2)|R�JC|0.5|°C/W|
|Junction−to−Ambient − Steady State (Note 2)|R�JA|40||



## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||150|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= 250�A, referenced to 25°C|||20.28||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 120 V|TJ= 25°C|||1|�A|
||||TJ= 125°C|||10|�A|
|Gate−to−Source Leakage Current|IGSS|VGS=±20 V, VDS= 0 V||||±100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 574�A||2.5|3.5|4.5|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ|ID= 250�A, referenced to 25°C|||−10.21||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 104 A|||3.3|4.1|m�|
|||VGS= 8 V, ID= 52 A|||3.5|4.7||
|Forward Transconductance|gFS|VDS= 5 V, ID= 90 A|||10.9||S|
|Gate−Resistance|RG|TA= 25°C|||1.2||�|
|**CHARGES & CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 75 V|||7285||pF|
|Output Capacitance|COSS||||2025|||
|Reverse Transfer Capacitance|CRSS||||10.6|||
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 75 V,<br>ID= 104 A|||88.9||nC|
|Threshold Gate Charge|QG(TH)||||22.8|||
|Gate−to−Source Charge|QGS||||37.5|||
|Gate−to−Drain Charge|QGD||||13.0|||
|Output Charge|QOSS|VGS= 0 V, VDS= 75 V|||272||nC|
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 75 V,<br>ID= 104 A, RG= 6�|||49||ns|
|Rise Time|tr||||38|||
|Turn−Off Delay Time|td(OFF)||||64|||
|Fall Time|tf||||10|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V, IS= 104 A, TJ= 25°C|||0.88|1.2|V|
|||VGS= 0 V, IS= 104 A, TJ= 125°C|||0.79|||
|Reverse Recovery Time|tRR|VGS= 0 V, IS= 104 A,<br>dIS/dt = 100 A/�s|||89||ns|
|Charge Time|ta||||47|||
|Discharge Time|tb||||42|||
|Reverse Recovery Charge|QRR||||164||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperature 

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**NVBGS4D1N15MC** 

## **TYPICAL CHARACTERISTICS** 

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180 V GS  = 10 V to 6.5 V<br>165<br>150<br>135<br>6.0 V<br>120<br>105<br>90<br>75<br>60<br>5.5 V<br>45<br>30<br>15 5.0 V<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


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180<br>165 VGS = 5 V<br>150<br>135<br>120<br>105<br>90<br>75<br>60 T J  = 25 ° C<br>45<br>30<br>15 TJ = 175 ° C TJ = −55 ° C<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

**Figure 2. Transfer Characteristics** 

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5.0<br>TJ = 25J = 25 = 25 ° C<br>4.5<br>4.0 V GS  = 8 V<br>3.5 VGS = 10 VGS = 10 V = 10 V<br>3.0<br>2.5<br>2.0<br>0 25 50 75 100 125 150 175 200 225 250<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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80 5.0<br>70 T J = 25 ° C TJ = 25J = 25 = 25 ° C<br>ID = 104 A 4.5<br>60<br>50 4.0 V GS  = 8 V<br>40 3.5 VGS = 10 VGS = 10 V = 10 V<br>30<br>3.0<br>20<br>2.5<br>10<br>0 2.0<br>5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 0 25 50 75 100 125 150 175 200 225 250<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.6 1M<br>VGS = 10 V VGS = 0 V<br>2.4<br>ID = 104 A<br>2.2 100K T J  = 175 ° C<br>2.0<br>1.8 T J = 150 ° C<br>1.6 10K<br>1.4 TJ = 125 ° C<br>1.2<br>1K<br>1.0<br>0.8<br>0.6 100<br>−50 −25 0 25 50 75 100 125 150 175 0 15 30 45 60 75 90 105 120 135 150<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

**Figure 5. On−Resistance Variation with Temperature** 

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## **TYPICAL CHARACTERISTICS** 

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10K<br>CISS<br>1K COSS<br>100<br>10 CRSS<br>VGS = 0 V<br>TJ = 25 ° C<br>f = 1 MHz<br>1<br>0 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

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1000<br>VGS = 10 V<br>V DS = 75 V t d(off)<br>I D  = 104 A<br>100<br>tr<br>t d(on)<br>10 tf<br>1<br>0 10 20 30 40 50 60<br>RG, GATE RESISTANCE ( � )<br>Figure 9. Resistive Switching Time Variation<br>vs. Gate Resistance<br>1000<br>10  � s<br>100<br>100  � s<br>10 T C  = 25 ° C<br>VGS ≤  10 V<br>Single Pulse<br>1 ms<br>1 RDS(on) Limit<br>Thermal Limit 10 ms<br>Package Limit 100 ms & 1 sec<br>0.1<br>1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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10<br>9 QG(TOT)<br>8<br>7<br>QGS QGD<br>6<br>5<br>4<br>3<br>2 V DS  = 75 V<br>ID = 104 A<br>1 T J  = 25 ° C<br>0<br>0 10 20 30 40 50 60 70 80 90<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source Voltage vs. Total Charge** 

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1000<br>VGS = 0 V<br>100<br>10<br>1 TJ = 175 ° C<br>0.1 T J  = 150 ° C T J  = 25 ° C T J  = −55 ° C<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

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100<br>TJ(initial) = 25 ° C<br>10 TJ(initial) = 125 ° C<br>1<br>1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00<br>TIME IN AVALANCHE (s)<br>, (A)<br>IPEAK<br>**----- End of picture text -----**<br>


**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

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**NVBGS4D1N15MC** 

## **TYPICAL CHARACTERISTICS** 

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1<br>50% Duty Cycle<br>20%<br>0.1<br>10%<br>5%<br>2%<br>0.01<br>1%<br>0.001<br>Single Pulse<br>0.0001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1<br>t, PULSE TIME (s)<br>C/W)<br>°<br>, (<br>JC<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

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**NVBGS4D1N15MC** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK7 (TO−263 7 LD)** CASE 418AY ISSUE C 

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**NVBGS4D1N15MC** 

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