NVB190N65S3F

NVB190N65S3F 

## MOSFET - Power 

## 650 V, 190 m 20 A, Single N-Channel, D2PAK 

## **Description** 

SUPERFET[®] III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. 

Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET[®] MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. 

## **Features** 

- 700 V @ TJ = 150°C 

- Typ. RDS(on) = 158 m 

- Ultra Low Gate Charge (Typ. Qg = 34 nC) 

- Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF) 

- 100% Avalanche Tested 

- Qualified with AEC−Q101 

- These Devices are Pb−Free and are RoHS Compliant 

## **Typical Applications** 

- Automotive On Board Charger 

- Automotive DC/DC Converter for HEV 

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|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|650 V|190 m @ 10 V|20 A|



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D<br>G<br>8<br>S<br>N−CHANNEL MOSFET<br>D<br>G<br>® S<br>D [2] PAK−3<br>TO−263<br>CASE 418AJ<br>**----- End of picture text -----**<br>


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MARKING DIAGRAM<br>**----- End of picture text -----**<br>


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&Z&3&K<br>NVB<br>190N65S3F<br>|<br>&Z = Assembly Plant Code<br>&3 = Data Code (Year & Week)<br>&K = Lot<br>NVB190N65S3F = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 8 of this data sheet. 

Publication Order Number: **NVB190N65S3F/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **June, 2019 − Rev. 0** 

**NVB190N65S3F** 

**Table 1. ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C unless otherwise stated) 

|**Table 1. ABS**|**OLUTE MAXIMUM RATINGS**(TC= 25°C unless othe|rwise stated)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain−to−Source Voltage||650|V|
|VGS|Gate−to−Source Voltage|− DC|±30|V|
|||− AC (f > 1 Hz)|±30||
|ID|Drain Current|− Continuous (TC= 25°C)|20|A|
|||− Continuous (TC= 100°C)|12.7||
|IDM|Drain Current|− Pulsed (Note 1)|50|A|
|EAS|Single Pulse Avalanche Energy (Note 2)||220|mJ|
|IAS|Avalanche Current||2.8|A|
|EAR|Repeated Avalanche Energy (Note 1)||1.62|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||50||
|PD|Power Dissipation|TC= 25°C|162|W|
|||− Derate Above 25°C|1.3|W/°C|
|TJ, Tstg|Operating Junction and Storage Temperature||−55 to 150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″from Case for 5 Seconds||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse � width limited by maximum junction temperature. 

2. IAS = 2.8 A, RG = 25 � , starting TJ = 25 ° C. 

3. ISD ≤ 10 A, di/dt ≤ 200 A/_s, VDD ≤ 400 V, starting TC = 25 ° C. 

**Table 2. THERMAL RESISTANCE RATINGS** 

|**Symbol**|**Parameter**|**Max**|**Unit**|
|---|---|---|---|
|R�JC|Thermal Resistance, Junction−to−Case, Max.|0.77|°C/W|
|R�JA|Thermal Resistance, Junction−to−Ambient, Max.|40||



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**2** 

## **NVB190N65S3F** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICA**|**L CHARACTERISTICS**(TC= 25°C unless|otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain−to−Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25°C|650|−|−|V|
|||VGS= 0 V, ID= 10 mA, TJ= 150°C|700|−|−|V|
|�BVDSS/�TJ|Breakdown Voltage Temperature Coefficient|ID= 20 mA, Referenced to 25°C|−|0.61|−|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VDS= 0 V|−|−|10|�A|
|||VDS= 520 V, TC= 125°C|−|128|−|�A|
|IGSS|Gate−to−Body Leakage Current|VGS= 0 V, ID= 1 mA, TJ= 25°C|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Drain−to−Source Breakdown Voltage|VGS= VDS, ID= 0.43 mA|3.0|−|5.0|V|
|RDS(on)|Static Drain−to−Source On Resistance|VGS= 10 V, ID= 10 A|−|158|190|m�|
|gFS|Forward Transconductance|VGS= 20 V, ID= 10 A|−|11|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|1605|−|pF|
|Coss|Output Capacitance||−|32|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 to 400 V, VGS= 0 V|−|314|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 to 400 V, VGS= 0 V|−|59|−|pF|
|Qg(total)|Total Gate Charge at 10 V|VDS= 400 V, ID= 10 A,<br>VGS= 10 V (Note 4)|−|34|−|nC|
|Qgs|Gate−to−Source Gate Charge||−|11|−|nC|
|Qgd|Gate−to−Drain “Miller” Charge||−|13|−|nC|
|ESR|Equivalent Series Resistance|F = 1 MHz|−|2|−|�|
|**SWITCHING CHARACTERISTICS, VGS = 10 V**|||||||
|td(on)|Turn-On Delay Time|VDD= 400 V, ID= 10 A,<br>VGS= 10 V, RG= 4.7�<br>(Note 4)|−|19|−|ns|
|tr|Rise Time||−|13|−|ns|
|td(off)|Turn-Off Delay Time||−|43|−|ns|
|tf|Fall Time||−|3|−|ns|
|**SOURCE−DRAIN DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Source−to−Drain Diode Forward Current||−|−|20|A|
|ISM|Maximum Pulsed Source−to−Drain Diode Forward Current||−|−|50|A|
|VSD|Source−to−Drain Diode Forward Voltage|VGS= 0 V, ISD= 10 A|−|−|1.3|V|
|trr|Reverse−Recovery Time|VGS= 0 V, ISD= 10 A,<br>dIF/dt = 100 A/�s|−|68|−|ns|
|Qrr|Reverse−Recovery Charge||−|220|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. 

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**3** 

**NVB190N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>VGS = 10 V<br>8.0 V<br>8.0 V 7.0 V V GS = 10 V<br>7.0 V 6.5 V<br>10 6.5 V<br>6.0 V 6.0 V<br>10<br>5.5 V<br>5.5 V<br>1<br>0.1 1<br>0.1 1 10 0.1 1 10<br>VDS, DRAIN−SOURCE VOLTAGE (V) VDS, DRAIN−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics<br>25 � C 150 � C<br>100 0.5<br>VDS = 20 V<br>0.4<br>VGS = 10 V<br>10 0.3<br>TJ = 25 ° C VGS = 20 V<br>0.2<br>1 TJ = 150 ° C TJ = −55 ° C 0.1<br>2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. Transfer Characteristics Figure 4. On−Resistance Variation vs. Drain<br>Current and Gate Voltage<br>100 100K<br>VGS = 0 V<br>10K<br>10<br>Ciss<br>1K<br>1 TJ = 150 ° C<br>100<br>0.1 T J = 25 ° C Coss<br>10<br>0.01 Crss<br>1 VGS = 0 V<br>0.001 T J  = −55 ° C 0.1 f = 1 MHz<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 1K<br>VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) �<br>, DRAIN CURRENT (A)<br>ID<br>, DRAIN−SOURCE ON−RESISTANCE (m<br>DS(on)<br>R<br>CAPACITANCE (pF)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature** 

**Figure 6. Capacitance Characteristics** 

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**4** 

**NVB190N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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10 1.2<br>VDD = 130 V ID = 10 mA<br>8 VDD = 400 V<br>1.1<br>6<br>1.0<br>4<br>0.9<br>2<br>0 0.8<br>0 8 16 24 32 40 −75 −25 25 75 125 175<br>QG, TOTAL GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs.<br>Temperature<br>3.0 100<br>ID = 10 A 10  � s<br>2.5<br>VGS = 10 V<br>10 100  � s<br>2.0<br>RDS(on) Limit<br>1.5 1 1 ms<br>1.0<br>10 ms<br>0.1 T C  = 25 ° C<br>0.5 TJ = 150 ° C<br>Single Pulse<br>DC<br>0 0.01<br>−75 −25 25 75 125 175 1 10 100 1000<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−SOURCE VOLTAGE (V)<br>Figure 9. On−Resistance Variation vs. Figure 10. Maximum Safe Operating Area<br>Temperature<br>25 9.0<br>20 7.2<br>15 5.4<br>10 3.6<br>5 1.8<br>0 0<br>25 50 75 100 125 150 0 100 200 300 400 500 600<br>TC, CASE TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN−TO−SOURCE<br>DSS<br>, GATE−SOURCE VOLTAGE (V)<br>BV<br>GS<br>V<br>BREAKDOWN VOLTAGE (Normalized)<br>, DRAIN−SOURCE<br>, DRAIN CURRENT (A)<br>RDS(on) ID<br>ON−RESISTANCE (Normalized)<br>J)<br>�<br> (<br>OSS<br>E<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Drain Current vs. Case Temperature** 

**Figure 12. EOSS vs. Drain−to−Source Voltage** 

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**5** 

**NVB190N65S3F** 

## **TYPICAL CHARACTERISTICS** 

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1.2 1000<br>1.0<br>0.8<br>0.6 100<br>0.4 Current Limited Max<br>0.2<br>0 10<br>0 25 50 75 100 125 150 0.00001 0.0001 0.001 0.01 0.1 1<br>TC, CASE TEMPERATURE ( ° C) t, RECTANGULAR PULSE<br>Figure 13. Normalized Power Dissipation vs. Figure 14. Peak Current Capability<br>Case Temperature<br>800 1.2<br>ID = 10 A ID = 0.43 mA<br>700<br>600<br>1.0<br>500<br>400 T A  = 150 ° C<br>300<br>0.8<br>200 TA = 25 ° C<br>100<br>0 0.6<br>5 6 7 8 9 10 −80 −40 0 40 80 120 160<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 15. RDS(on) vs. Gate Voltage Figure 16. Normalized Gate Threshold Voltage<br>vs. Temperature<br>10<br>1 Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>Notes:<br>0.01 P DM Z � JC (t) = r(t) x R � JC<br>0.01 R � JC = 0.77 ° C/W<br>Single Pulse t 1 Peak TJ = PDM x Z � JC (t) + TC<br>t2 Duty Cycle, D = t1/t2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>, PEAK CURRENT (A)<br>IDM<br>POWER DISSIPATION MULTIPLIER<br>) �<br>, ON−RESISTANCE (m<br>DS(on)<br>R<br>GATE THRESHOLD VOLTAGE (Normalized)<br>RESISTANCE (Normalized)<br>r(t), EFFECTIVE TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


**Figure 17. Transient Thermal Response** 

SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC. 

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**6** 

**NVB190N65S3F** 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|NVB190N65S3F|NVB190N65S3F|D2PAK|Tape & Reel†|330 mm|24 mm|800 Units|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**7** 

## MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE F<br>SCALE 1:1<br>**----- End of picture text -----**<br>


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DATE 11 MAR 2021<br>**----- End of picture text -----**<br>


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XXXXXX = Specific Device Code<br>OP TI ON A L CONS T RUC TI ONS<br>A = Assembly Location<br>GENERIC MARKING DIAGRAMS* WL = Wafer Lot<br>Y = Year<br>WW = Work Week<br>XX AYWW W = Week Code (SSG)<br>XXXXXXXXX XXXXXXXXG XXXXXXXXG XXXXXX M = Month Code (SSG)<br>AWLYWWG AYWW  AKA XXYMW G = Pb−Free Package<br>AKA = Polarity Indicator<br>*This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present. Some products<br>IC Standard Rectifier SSG may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2018 

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