NVB072N65S3

## NVB072N65S3 

## Power MOSFET, Automotive N-Channel, SUPERFET III, Easy-drive **650 V, 44 A, 72 m** 

## **www.onsemi.com** 

## **Description** 

SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superior switching performance, and with− stand extreme dv/dt rate. Consequently, SuperFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. 

## **Features** 

- AEC−Q101 Qualified 

- Max Junction Temperature 150°C 

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BVDSS RDS(on) MAX ID MAX<br>650 V 72 m Ω  V 44 A<br>D<br>G<br>¢<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


- Typ. RDS(on) = 61 mΩ 

- Ultra Low Gate Charge (Typ. QG = 82 nC) 

- Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF) 

- 100% Avalanche Tested 

- These Devices are Pb−Free and are RoHS Compliant 

## **Typical Applications** 

- Automotive PHEV−BEV DC−DC Converter 

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D2PAK<br>3 LEAD<br>CASE 418AJ<br>**----- End of picture text -----**<br>


- Automotive Onboard Charger for PHEV−BEV 

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MARKING DIAGRAM<br>$Y&Z&3&K<br>NVB<br>072N65S3<br>~<br>$Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>NVB072N65S3 = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **NVB072N65S3/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **December, 2018 − Rev. 1** 

**NVB072N65S3** 

**ABSOLUTE MAXIMUM RATINGS** (TC = 25 ° C, Unless otherwise specified) 

|**ABSOLUTE MA**|**XIMUM RATINGS**(TC= 25°C, Unless otherwise specified)|**XIMUM RATINGS**(TC= 25°C, Unless otherwise specified)|||
|---|---|---|---|---|
|**Symbol**|**Parameter**||**Value**|**Unit**|
|VDSS|Drain to Source Voltage||650|V|
|VGSS|Gate to Source Voltage|DC|±30|V|
|||AC (f > 1 Hz)|±30|V|
|ID|Drain Current|Continuous (TC= 25°C)|44|A|
|||Continuous (TC= 100°C)|28|A|
|IDM|Pulsed Drain Current|Pulsed (Note 1)|110|A|
|EAS|Single Pulsed Avalanche Energy (Note 2)||214|mJ|
|EAR|Repetitive Avalanche (Note 1)||3.12|mJ|
|dv/dt|MOSFET dv/dt||100|V/ns|
||Peak Diode Recovery dv/dt (Note 3)||20|V/ns|
|PD|Power Dissipation|(TC= 25°C)|312|W|
|||Derate Above 25°C|2.5|W/°C|
|TJ,TSTG|Operating and Storage Temperature Range||−55 to +150|°C|
|TL|Maximum Lead Temperature for Soldering, 1/8″from Case for 5 Seconds||300|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Repetitive rating: pulse−width limited by maximum junction temperature. 

2. IAS = 4.8 A, RG = 25 Ω , starting TJ = 25 ° C. 

3. I SD < 44 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25 ° C. 

4. Essentially independent of operating temperature typical characteristics. 

## **THERMAL CHARACTERISTICS** 

|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|RθJC|Thermal Resistance, Junction to Case, Max.|0.37|°C/W|
|RθJA|Thermal Resistance, Junction to Ambient (Minimum Pad of 2−oz Copper), Max.|62.5|°C/W|
|RθJA|Thermal Resistance, Junction to Ambient (1 in2Pad of 2−oz Copper), Max.|40|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Shipping (Qty / Packing)**|
|---|---|---|---|---|
|NVB072N65S3|NVB072N65S3|D2PAK−3|Tube|30 Units / Tube|



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**2** 

**NVB072N65S3** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise noted) 

|**ELECTRICAL**|**CHARACTERISTICS**  (TC= 25°C un|less otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|BVDSS|Drain−to−Source Breakdown Voltage|VGS= 0 V, ID= 1 mA, TJ= 25°C|650|−|−|V|
|||VGS= 0 V, ID= 1 mA, TJ= 150°C|700|−|−|V|
|ΔBVDSS /ΔTJ|Breakdown Voltage Temperature<br>Coefficient|ID= 1 mA, Referenced to 25°C|−|0.60|−|V/°C|
|IDSS|Zero Gate Voltage Drain Current|VDS= 650 V, VGS= 0 V|−|0.30|1|μA|
|||VDS= 520 V, VGS= 0 V, Tc = 125°C|−|7.30|−||
|IGSS|Gate to Body Leakage Current|VGS=±30 V, VDS= 0 V|−|−|±100|nA|
|**ON CHARACTERISTICS**|||||||
|VGS(th)|Gate to Source Threshold Voltage|VGS =VDS, ID= 1.0 mA|2.5|−|4.5|V|
|RDS(on)|Static Drain to Source On Resistance|VGS= 10 V, ID= 22 A, TJ= 25°C|−|61|72|mΩ|
|||VGS= 10 V, ID= 22 A, TJ= 100°C|−|107|−|mΩ|
|gFS|Forward Transconductance|VDS= 20 V, ID= 44 A|−|29.7|−|S|
|**DYNAMIC CHARACTERISTICS**|||||||
|Ciss|Input Capacitance|VDS= 400 V, VGS= 0 V, f = 1 MHz|−|3300|−|pF|
|Coss|Output Capacitance||−|72.8|−|pF|
|Crss|Reverse Transfer Capacitance||−|14.6|−|pF|
|Coss(eff.)|Effective Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|724|−|pF|
|Coss(er.)|Energy Related Output Capacitance|VDS= 0 V to 400 V, VGS= 0 V|−|104|−|pF|
|Qg(tot)|Total Gate Charge|VDS= 400 V, VGS= 10 V, ID= 44 A<br>(Note 4)|−|82.0|−|nC|
|Qgs|Gate to Source Gate Charge||−|23.3|−|nC|
|Qgd|Gate to Drain “Miller” Charge||−|34.0|−|nC|
|RG|Gate Resistance|f = 1 MHz|−|0.685|−|mΩ|
|**SWITCHING CHARACTERISTICS**|||||||
|td(on)|Turn−On Delay Time|VDD= 400 V, ID= 44 A, VGS= 10 V,<br>RG= 4.7Ω(Note 4)|−|26.3|−|ns|
|tr|Turn−On Rise Time||−|50|−|ns|
|td(off)|Turn−Off Delay Time||−|65.9|−|ns|
|tf|Fall Time||−|32|−|ns|
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|IS|Maximum Continuous Drain to Source|Diode Forward Current|−|−|44|A|
|ISM|Maximum Plused Drain to Source Diode Forward Current||−|−|110|A|
|VSD|Drain to Source Diode Forward<br>Voltage|VGS= 0 V, ISD= 22 A|−|−|1.2|V|
|trr|Reverse Recovery Time|VGS= 0 V, ISD= 44 A dIF/dt = 100 A/μs|−|576|−|nS|
|Qrr|Reverse Recovery Charge||−|14.3|−|μC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**NVB072N65S3** 

## **TYPICAL CHARACTERISTICS** 

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90<br>VGS Pulse Duration = 250  μ s<br>20 V Top TJ = 25 ° C<br>10 V<br>8.0 V<br>60<br>7.0 V<br>6.5 V<br>6.0 V<br>5.5 V<br>30<br>5.0 V<br>0<br>0 1 2 3 4 5<br>VDS, Drain to Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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40<br>VGS Pulse Duration = 250  μ s<br>20 V Top TJ = 25 ° C<br>10 V<br>30<br>8.0 V<br>7.0 V<br>6.5 V<br>20<br>6.0 V<br>5.5 V<br>10<br>0<br>0 1 2 3 4 5<br>VDS, Drain to Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 1. Saturation Characteristics** 

**Figure 2. Saturation Characteristics** 

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100<br>Pulse Duration = 250  μ s<br>Duty Cycle = 0.5% Max<br>VDS = 5 V<br>10<br>TJ = 25 ° C<br>TJ = 150 ° C TJ = −55 ° C<br>1<br>2 3 4 5 6 7 8<br>VGS, Gate to Source Voltage (V)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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0.15<br>TC = 25 ° C<br>0.10<br>VGS = 10 V<br>VGS = 20 V<br>0.05<br>0<br>0 20 40 60 80 100<br>ID, Drain Current (A)<br>) Ω<br>, Drain−Source<br>On−Resistance (<br>SDS)ON)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. Transfer Characteristic** 

**Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage** 

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100K<br>100 V GS  = 0 V<br>10K<br>10 Ciss<br>1K<br>1<br>Coss<br>0.1 TJ = 150 ° C 100<br>0.01 10 f = 1 MHz Crss<br>VGS = 0 V<br>0.001 TJ = 25 ° C TJ = −55 ° C 1<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 1000<br>VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V)<br>Capacitance (pF)<br>, Reverse Drain Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 5. Forward Diode Characteristics** 

**Figure 6. Capacitance vs. Drain to Source Volatage** 

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**NVB072N65S3** 

## **TYPICAL CHARACTERISTICS** (continued) 

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10<br>ID = 75 A VDS = 130 V<br>8<br>VDS = 400 V<br>6<br>4<br>2<br>0<br>0 15 30 45 60 75 90<br>QG, Gate Charge (nC)<br>, Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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1.2<br>ID = 10 mA<br>1.1<br>1.0<br>0.9<br>0.8<br>−80 −40 0 40 80 120 160<br>TJ, Junction Temperature ( ° C)<br>Breakdown Voltage<br>Normalized Drain to Source<br>**----- End of picture text -----**<br>


**Figure 7. Gate Charge vs. Gate to Source Voltage** 

**Figure 8. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature** 

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3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>ID = 44 A<br>0.5<br>VGS = 10 V<br>0<br>−80 −40 0 40 80 120 160<br>TJ, Junction Temperature ( ° C)<br>ON−Resistance<br>Normalized Drain to Source<br>**----- End of picture text -----**<br>


**Figure 9. Normalized RDSON vs. Junction Temperature** 

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60<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150<br>TC, Case Temperature ( ° C)<br>, Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Continuous Drain Current vs. Case Temperature** 

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10 us<br>100<br>100 us<br>10 1 ms<br>Operation in this Area<br>is Limited by R DS(on) 10 ms<br>1<br>Single Pulse<br>TJ = 150 ° C<br>T C  = 25 ° C DC<br>0.1<br>1 10 100 1000<br>VDS, Drain−Source Voltage (V)<br>Figure 10. Forward Bias Safe Operating Area<br>20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 700<br>VDS, Drain to Source Voltage (V)<br>, Drain Current (A)<br>ID<br>J)<br>μ<br> (<br>OSS<br>E<br>**----- End of picture text -----**<br>


**Figure 12. EOSS vs. Drain to Source Voltage** 

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**NVB072N65S3** 

## **TYPICAL CHARACTERISTICS** (continued) 

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1.2 1000<br>1.0<br>0.8<br>0.6 100<br>Current Max Limited<br>0.4<br>0.2<br>0.0 10<br>0 25 50 75 100 125 150 0.00001 0.0001 0.001 0.01 0.1 1<br>TC, Case Temperature ( ° C) t, Rectangular Pulse Duration (s)<br>Figure 13. Normalized Power Dissipation vs. Case Figure 14. Peak Current Capability<br>Temperature<br>250 1.2<br>TJ = 150 ° C VGS = VDS<br>ID = 1 mA<br>200<br>1.0<br>150<br>Pulse Duration = 250  μ s<br>0.8<br>Duty Cycle = 0.5% Max<br>100 ID = 44 A<br>TJ = 25 ° C 0.6<br>50<br>0 0.4<br>6 7 8 9 10 −80 −40 0 40 80 120 160<br>VGS, Gate to Source Voltage (V) TJ, Junction Temperature ( ° C)<br>, Peak Current (A)<br>IDM<br>Power Dissipation Multiplier<br>) �<br>, On−Resistance (m<br>DS(on)<br>R<br>Normalized Gate Threshold Voltage<br>**----- End of picture text -----**<br>


**Figure 15. On−Resistance vs. Gate to Source Voltage** 

**Figure 16. Normalized Gate Threshold Voltage vs. Temperature** 

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10<br>DUTY CYCLE − DESCENDING ORDER<br>1<br>D = 0.50<br>0.20<br>0.10 P DM<br>0.1 0.05<br>0.02 t1<br>0.01<br>t 2<br>0.01 SINGLE PULSE Z � JC(t) = r(t) x R � JC<br>Peak TJ = PDM x Z � JC(t) + TC<br>Duty Cycle, D = t 1 /t 2<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t, Rectangular Pulse Duration (s)<br>JC<br>θ<br>Normalized Thermal Impedance, Z<br>**----- End of picture text -----**<br>


**Figure 17. Normalized Maximum Transient Thermal Impedance** 

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**NVB072N65S3** 

## **PACKAGE DIMENSIONS** 

**D[2] PAK−3 (TO−263, 3−LEAD)** CASE 418AJ ISSUE C 

||||||||||||||||||||||||||||||||||~~**B**~~|**SEATING**<br>**PLANE**|**SEATING**<br>**PLANE**|||||||||||||||||||||||NOTES:|NOTES:||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||**E**|||||||||~~**A**~~|||||||||||**A**|||||||||||||||||||||||||||||||||1. DIMENSIONING AND TOLERANCING PER ASME<br>Y14.5M, 1994.||
||||||||||**E2**||||||||**NOTE 3**|||||||||||||||**c2**<br>**A**|||||||||||||||||**L1**||||||||||2. CONTROLLING DIMENSION: INCHES.<br>3. CHAMFER OPTIONAL<br>4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH. MOLD FLASH SHALL NOT EXCEED 0.005<br>PER SIDE. THESE DIMENSIONS ARE MEASURED||
|||**L1**|||||||||||||||||||||||||||||||||**D1**||||||||||||||||||||||||AT THE OUTERMOST EXTREMES OF THE PLAS-<br>TIC BODY AT DATUM H.||
|**H**|||||||||||||||**D**||||||||||||||||||||||||||||||||||||||||||||5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN<br>DIMENSIONS E, L1, D1 AND E1.||
||||||||||||||||||||||||||||||||**DETAIL C**||||||||||||||||**E1**||||||||||||**MILLIMETERS**<br>**INCHES**||
||||||||||||||||||||||||||||||||||||||||||||||||||||0.10|||M||B|A|M|**DIM**<br>**MIN**<br>**MAX**<br>**MIN**<br>**MAX**||
||||||||||||||**L2**||||||||||||||||||||**A**||||||||||||||||||||||||||**A**<br>0.160<br>0.190<br>4.06<br>4.83<br>**b**<br>0.020<br>0.039<br>0.51<br>0.99<br>**A1**<br>0.000<br>0.010<br>0.00<br>0.25||
||||**e**|||||||||||||||||||**c**||||||||||||||||**VIEW**|||||**A−A**||||||||||||||||**c**<br>0.012<br>0.029<br>0.30<br>0.74||
|||||**TOP**|||**VIEW**||||||**b**<br>**2X**<br>0.10|||||M||M<br>A<br>B<br>**SIDE VIEW**||||||||||||||||||**GAUGE**<br>**PLANE**||||||||||||||**H**|||||||**D**<br>0.330<br>0.380<br>8.38<br>9.65<br>**E**<br>0.380<br>0.420<br>9.65<br>10.67<br>**c2**<br>0.045<br>0.065<br>1.14<br>1.65<br>**E1**<br>0.245<br>−−−−<br>6.22<br>−−−−<br>**D1**<br>0.260<br>−−−−<br>6.60<br>−−−−||
|||||||||||||||||||||||||||||||||||||||**L3**|||||||||||||||||||||**e**<br>0.100 BSC<br>2.54 BSC<br>**H**<br>0.575<br>0.625<br>14.60<br>15.88||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||**L**<br>0.070<br>0.110<br>1.78<br>2.79||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||**L1**<br>−−−−<br>0.066<br>−−−−<br>1.68||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||**L2**<br>−−−−<br>0.070<br>−−−−<br>1.78||
|||||||||||||||||||||||||||||||||||||||||**L**||||||||**A1**||||||**B**||**SEATING**<br>**PLANE**|||**L3**<br>0.010 BSC<br>0.25 BSC<br>**M**<br>−8<br>8<br>−8<br>8<br>°<br>°<br>°<br>°||
||||||||||||||||||||||||||||||||||||**M**|||||||**DETAIL**||||||**C**|||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||**VIEW A−A**||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||**OPTIONAL CONSTRUCTIONS**||||||||||||||||||||||||||||||||||||||||||||||||||||||



## **RECOMMENDED SOLDERING FOOTPRINT*** 

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0.436<br>0.366<br>0.653<br>2X<br>0.169<br>2X<br>0.063<br>0.100<br>PITCH<br>DIMENSIONS: INCHES<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**NVB072N65S3** 

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