NUP4301MR6T1G

## NUP4301MR6, SZNUP4301MR6 

## Low Capacitance Diode Array for ESD Protection in Four Data Lines 

SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). 

## **http://onsemi.com** 

## **Features** 

- Low Capacitance (1.5 pf Maximum Between I/O Lines) 

- Single Package Integration Design 

- Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B 

**==> picture [44 x 17] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−74<br>CASE 318F<br>**----- End of picture text -----**<br>


## **PIN CONFIGURATION AND SCHEMATIC** 

- Protection for IEC61000−4−2 (Level 4) 

   - 8.0 kV (Contact) 15 kV (Air) 

- Ensures Data Line Speed and Integrity 

- Fewer Components and Less Board Space 

- Direct the Transient to Either Positive Side or to the Ground 

- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**==> picture [124 x 51] intentionally omitted <==**

**----- Start of picture text -----**<br>
I/O  1 6  I/O<br>VN  2 5  VP<br>1/O  3 4  I/O<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

- This is a Pb−Free Device* 

## **Applications** 

- USB 1.1 and 2.0 Data Line Protection 

- T1/E1 Secondary IC Protection 

- T3/E3 Secondary IC Protection 

- HDSL, IDSL Secondary IC Protection 

- Video Line Protection 

- Microcontroller Input Protection 

- Base Stations 

- I[2] C Bus Protection 

**==> picture [108 x 72] intentionally omitted <==**

**----- Start of picture text -----**<br>
64M<br>1<br>64 = Device Code<br>M = Date Code*<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location. 

- *Date Code orientation may vary depending upon manufacturing location. 

## **ORDERING INFORMATION** 

|**Device**<br>**Package**|**Package**|**Shipping**†|
|---|---|---|
|NUP4301MR6T1G<br>(Pb−Free)|SC−74<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SZNUP4301MR6T1G<br>(Pb−Free)|SC−74<br>(Pb−Free)|3,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

Publication Order Number: **NUP4301MR6T1/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **September, 2014 − Rev. 7** 

## **NUP4301MR6, SZNUP4301MR6** 

## **MAXIMUM RATINGS** (Each Diode) (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(Each Diode) (TJ= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Reverse Voltage|VR|70|Vdc|
|Forward Current|IF|200|mAdc|
|Peak Forward Surge Current|IFM(surge)|500|mAdc|
|Repetitive Peak Reverse Voltage|VRRM|70|V|
|Average Rectified Forward Current (Note 1) (averaged over any 20 ms period)|IF(AV)|715|mA|
|Repetitive Peak Forward Current|IFRM|450|mA|
|Non−Repetitive Peak Forward Current<br>t = 1.0�s<br>t = 1.0 ms<br>t = 1.0 S|IFSM|2.0<br>1.0<br>0.5|A|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 � 0.75 � 0.062 in. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance, Junction−to−Ambient|R�JA|556|°C/W|
|Lead Solder Temperature, Maximum 10 Seconds Duration|TL|260|°C|
|Junction Temperature|TJ|−40 to +150|°C|
|Storage Temperature|Tstg|−55 to +150|°C|



## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (Each Diode) 

|**ELECTRICAL CHARACTERISTICS**(TJ= 25°C unless otherwise|noted) (Each|Diode)||||
|---|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||
|Reverse Breakdown Voltage<br>(I(BR)= 100�A)|V(BR)|70|−|−|Vdc|
|Reverse Voltage Leakage Current<br>(VR= 70 Vdc)<br>(VR= 25 Vdc, TJ= 150°C)<br>(VR= 70 Vdc, TJ= 150°C)|IR|−<br>−<br>−|−<br>−<br>−|2.5<br>30<br>50|�Adc|
|Capacitance (between I/O pins)<br>(VR= 0 V, f = 1.0 MHz)|CD|−|0.8|1.5|pF|
|Capacitance (between I/O pin and ground)<br>(VR= 0 V, f = 1.0 MHz)|CD|−|1.6|3|pF|
|Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 50 mAdc)<br>(IF= 150 mAdc)|VF|−<br>−<br>−<br>−|−<br>−<br>−<br>−|715<br>855<br>1000<br>1250|mVdc|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Alumina = 0.4 � 0.3 � 0.024 in. 99.5% alumina. 

3. Include SZ-prefix devices where applicable. 

**http://onsemi.com** 

**2** 

**NUP4301MR6, SZNUP4301MR6** 

## **Curves Applicable to Each Cathode** 

**==> picture [241 x 591] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TA = 85°C<br>10<br>TA = -�40°C<br>1.0 TA = 25°C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>Figure 1. Forward Voltage<br>10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>TA = 85°C<br>0.1<br>TA = 55°C<br>0.01<br>TA = 25°C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 2. Leakage Current<br>1.75<br>1.5<br>1.25<br>1.0<br>0.75<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>IF, FORWARD CURRENT (mA)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Capacitance** 

**http://onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [486 x 44] intentionally omitted <==**

**----- Start of picture text -----**<br>
SC−74<br>6 CASE 318F<br>ISSUE P<br>1<br>DATE 07 OCT 2021<br>SCALE 2:1<br>**----- End of picture text -----**<br>


**==> picture [87 x 67] intentionally omitted <==**

## **GENERIC MARKING DIAGRAM*** 

XXX M � � XXX = Specific Device Code M = Date Code � = Pb−Free Package 

(Note: Microdot may be in either location) 

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: STYLE 2: STYLE 3: PIN 1. CATHODE PIN 1. NO CONNECTION PIN 1. EMITTER 1 2. ANODE 2. COLLECTOR 2. BASE 1 3. CATHODE 3. EMITTER 3. COLLECTOR 2 4. CATHODE 4. NO CONNECTION 4. EMITTER 2 5. ANODE 5. COLLECTOR 5. BASE 2 6. CATHODE 6. BASE 6. COLLECTOR 1 STYLE 7: STYLE 8: STYLE 9: PIN 1. SOURCE 1 PIN 1. EMITTER 1 PIN 1. EMITTER 2 2. GATE 1 2. BASE 2 2. BASE 2 3. DRAIN 2 3. COLLECTOR 2 3. COLLECTOR 1 4. SOURCE 2 4. EMITTER 2 4. EMITTER 1 5. GATE 2 5. BASE 1 5. BASE 1 6. DRAIN 1 6. COLLECTOR 1 6. COLLECTOR 2 

STYLE 4: STYLE 5: STYLE 6: PIN 1. COLLECTOR 2 PIN 1. CHANNEL 1 PIN 1. CATHODE 2. EMITTER 1/EMITTER 2 2. ANODE 2. ANODE 3. COLLECTOR 1 3. CHANNEL 2 3. CATHODE 4. EMITTER 3 4. CHANNEL 3 4. CATHODE 5. BASE 1/BASE 2/COLLECTOR 3 5. CATHODE 5. CATHODE 6. BASE 3 6. CHANNEL 4 6. CATHODE STYLE 10: STYLE 11: PIN 1. ANODE/CATHODE PIN 1. EMITTER 2. BASE 2. BASE 3. EMITTER 3. ANODE/CATHODE 4. COLLECTOR 4. ANODE 5. ANODE 5. CATHODE 6. CATHODE 6. COLLECTOR 

## **DOCUMENT NUMBER: 98ASB42973B** 

**DESCRIPTION: SC−74** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

**onsemi** and                     are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**