NUP4004M5T1G
TVS Diode, NUP40, Bidirectional, 5 V, TSOP, 5 Pins
- Manufacturer: ONSEMI
- Product type: TVS Diodes
- Product Range:NUP40 Series; TVS Polarity:Bidirectional; Reverse Stand-Off Voltage Vrwm:5V; Clamping Voltage Vc Max:-; Diode Case Style:TSOP; No. of Pins:5Pins; Breakdown Voltage
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 5Pins
- TVS Polarity: Bidirectional
- Product Range: NUP40
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: TSOP
- Clamping Voltage Max: -
- Reverse Standoff Voltage: 5V
- Maximum Breakdown Voltage: 8V
- Minimum Breakdown Voltage: 7V
- Operating Temperature Max: 125°C
- Peak Pulse Power Dissipation: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.37 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## NUP4004M5 ## ESD Protection Diode Array ## **5−Pin, Bi−Directional, Quad** This 5−Pin bi−directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other applications. Its integrated design provides bi−directional protection for four separate lines using a single TSOP−5 package. This device is ideal for situations where board space is a premium. ## **Features** - Bi−directional Protection for Four Lines in a Single TSOP−5 Package - Low Leakage Current - Low Capacitance ## **www.onsemi.com** **==> picture [116 x 77] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>2<br>3<br>1<br>Sh<br>**----- End of picture text -----**<br> - Provides ESD Protection for JEDEC Standards JESD22 - Machine Model = Class C - Human Body Model = Class 3B - Provides ESD Protection for IEC 61000−4−2, 15 kV (Air), 8 kV (Contact) - This is a Pb−Free Device ## **Mechanical Characteristics** **==> picture [38 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>1<br>TSOP−5<br>CASE 483<br>**----- End of picture text -----**<br> **==> picture [52 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> MARKING<br>DIAGRAM<br>5<br>MY M<br>1<br>**----- End of picture text -----**<br> - Void Free, Transfer−Molded, Thermosetting Plastic Case - Corrosion Resistant Finish, Easily Solderable - Package Designed for Optimal Automated Board Assembly - Small Package Size for High Density Applications **==> picture [102 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> MY = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> (Note: Microdot may be in either location) ## **Applications** - LCD, Plasma TV Video Lines - Other Telephone Sets - Computers / Printers / Set−Top Boxes **MAXIMUM RATINGS** (TJ=25 ° C, unless otherwise specified) **Rating Symbol Value Unit** Operating Junction Temperature Range TJ −40 to ° C 125 Storage Temperature Range TSTG −55 to ° C 150 Lead Solder Temperature – Maximum (10 sec) TL 260 ° C Human Body Model ( HBM) ESD 16 kV Machine Model (MM) 0.4 IEC 61000−4−2 Air (ESD) 30 IEC 61000−4−2 Contact (ESD) 30 ~~+~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NUP4004M5T1G|TSOP−5<br>(Pb−Free)|3000/Tape & Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **NUP4004M5/D** **1** © Semiconductor Components Industries, LLC, 2008 **October, 2017 − Rev. 3** **NUP4004M5** **ELECTRICAL CHARACTERISTICS** (TJ=25 ° C, unless otherwise specified) |**ELECTRICAL CHARACTERISTICS**(TJ=25°C, unl|ess otherwise specified)|||||| |---|---|---|---|---|---|---| |**Parameter**|**Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Working Voltage|(Note 1)|VRWM|||5.0|V| |Breakdown Voltage|IT= 1 mA, (Note 2)|VBR||7.0|8.0|V| |Reverse Leakage Current|VRWM= 5 V|IR||100|1000|nA| |Capacitance|VR= −3 V, f = 1 MHz<br>(Line to GND)|Cj||23||pF| |Capacitance|VR= 3 V, f = 1 MHz<br>(Line to GND)|Cj||32||pF| 1. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. ## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise specified) **==> picture [490 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 110 110<br>100 WAVEFORM 100<br>PARAMETERS<br>90 90<br>tr = 8 � s<br>80 td = 20 � s 80<br>70 70<br>c−t<br>60 60<br>50 td = IPP/2 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 0<br>0 5 10 15 20 25 30 0 25 50 75 100 125 150<br>t, TIME ( � s) TA, AMBIENT TEMPERATURE ( ° C)<br>PP<br>PP<br>PERCENT OF I<br>% OF RATED POWER OR I<br>**----- End of picture text -----**<br> **Figure 1. Pulse Waveform** **Figure 2. Power Derating Curve** **www.onsemi.com** **2** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [42 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>1<br>SCALE 2:1<br>**----- End of picture text -----**<br> **==> picture [43 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> TSOP−5<br>CASE 483<br>ISSUE N<br>**----- End of picture text -----**<br> ## DATE 12 AUG 2020 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. **==> picture [482 x 407] intentionally omitted <==** **----- Start of picture text -----**<br> NOTE 5 D 5X Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>0.20 C A B 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH<br>2X 0.10 T THICKNESS. MINIMUM LEAD THICKNESS IS THE<br>MINIMUM THICKNESS OF BASE MATERIAL.<br>M 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>2X 0.20 T B 5 4 S FLASH, PROTRUSIONS, OR GATE BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT<br>1 2 3 EXCEED 0.15 PER SIDE. DIMENSION A.<br>K 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL<br>B G DETAIL Z TRIMMED LEAD IS ALLOWED IN THIS LOCATION.TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2<br>i A A FROM BODY.<br>MILLIMETERS<br>TOP VIEW DIM MIN MAX<br>A 2.85 3.15<br>B 1.35 1.65<br>DETAIL Z C 0.90 1.10<br>J D 0.25 0.50<br>C G 0.95 BSC<br>H 0.01 0.10<br>0.05 J 0.10 0.26<br>H C SEATINGPLANE END VIEW MK 0.200 0.6010<br>Se SIDE VIEW S 2.50 3.00<br>GENERIC<br>SOLDERING FOOTPRINT*<br>MARKING DIAGRAM*<br>1.9<br>0.074 5 5<br>0.95<br>0.037 XXXAYW XXX M<br>1 1<br>Analog Discrete/Logic<br>fog, bed ae<br>2.4 XXX = Specific Device Code XXX = Specific Device Code<br>0.094 A = Assembly Location M = Date Code<br>Y = Year = Pb−Free Package<br>W = Work Week<br>1.0<br>0.039 boo m = Pb−Free Package :<br>(Note: Microdot may be in either location)<br>ft 0.0280.7 SCALE 10:1 = inchesmm *This information is generic. Please refer todevice data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, |<br>*For additional information on our Pb−Free strategy and soldering may or may not be present.<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ARB18753C** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: TSOP−5 PAGE 1 OF 1** ~~[a~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2018 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 1, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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