NUP2105LT1G

## 27 V ESD Protection Diode **Dual Line CAN Bus Protector** 

## NUP2105L, SZNUP2105L 

The SZ/NUP2105L has been designed to protect the CAN transceiver in high−speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides bidirectional protection for each data line with a single compact SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. 

**www.onsemi.com** SOT−23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. **SOT−23 DUAL BIDIRECTIONAL Features VOLTAGE SUPPRESSOR** • 350 W Peak Power Dissipation per Line (8/20 sec Waveform) **350 W PEAK POWER** • Low Reverse Leakage Current (< 100 nA) • Low Capacitance High−Speed CAN Data Rates • IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4, 30 kV −IEC 61000−4−4 (EFT): 40 A – 5/50 ns −IEC 61000−4−5 (Lighting) 8.0 A (8/20 s) ~~®~~ • ISO 7637−2 Pulse 2a: Repetitive Load Switch Disconnect, 9.5 A **SOT−23 CASE 318** • ISO 7637−3 Pulse 3a,b: Repetitive Load Switching Fast Transients, **STYLE 28** 

- ISO 7637−3 Pulse 3a,b: Repetitive Load Switching Fast Transients, 50 A 

- Flammability Rating UL 94 V−0 

**==> picture [181 x 274] intentionally omitted <==**

**----- Start of picture text -----**<br>
PIN 1<br>PIN 3<br>PIN 2<br>=a,<br>CAN_H<br>CAN<br>Transceiver CAN_L CAN Bus<br>NUP2105L<br>MARKING DIAGRAM<br>27EM<br>1 =<br>27E = Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


- SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Industrial Control Networks 

   - ♦ Smart Distribution Systems (SDS[®] ) 

   - ♦ DeviceNet™ 

- Automotive Networks 

   - ♦ Low and High−Speed CAN 

   - ♦ Fault Tolerant CAN 

(Note: Microdot may be in either location) 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **NUP2105L** / **D** 

**1** 

© Semiconductor Components Industries, LLC, 2003 **May, 2020 − Rev. 10** 

**NUP2105L, SZNUP2105L** 

**MAXIMUM RATINGS** (TJ = 25 ° C, unless otherwise specified) 

|**MAXIMU**|**M RATINGS**(TJ= 25°C, unless otherwise specified)|||
|---|---|---|---|
|**Symbol**|**Rating**|**Value**|**Unit**|
|PPK|Peak Power Dissipation<br>8/20�s Double Exponential Waveform (Note 1)|350|W|
|TJ|Operating Junction Temperature Range|−55 to 150|°C|
|TJ|Storage Temperature Range|−55 to 150|°C|
|TL|Lead Solder Temperature (10 s)|260|°C|
|ESD|Human Body model (HBM)<br>Machine Model (MM)<br>IEC  61000−4−2 Specification (Contact)|16<br>400<br>30|kV<br>V<br>kV|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Non−repetitive current pulse per Figure 1. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C, unless otherwise specified) 

|**ELECTR**|**ICAL CHARACTERISTICS** (TJ=|25°C, unless otherwise specified)|||||
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|VRWM|Reverse Working Voltage|(Note 2)|24|−|−|V|
|VBR|Breakdown Voltage|IT= 1 mA (Note 3)|26.2|−|32|V|
|IR|Reverse Leakage Current|VRWM= 24 V|−|1.5|100|nA|
|VC|Clamping Voltage|IPP= 5 A (8/20�s Waveform)<br>(Note 4)|−|−|40|V|
|VC|Clamping Voltage|IPP= 8 A (8/20�s Waveform)<br>(Note 4)|−|−|44|V|
|IPP|Maximum Peak Pulse Current|8/20�s Waveform (Note 4)|−|−|8.0|A|
|CJ|Capacitance|VR= 0 V, f = 1 MHz (Line to GND)|−|−|30|pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 

3. VBR is measured at pulse test current IT. 

4. Pulse waveform per Figure 1. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NUP2105LT1G|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|SZNUP2105LT1G*|SOT−23<br>(Pb−Free)|3,000 / Tape & Reel|
|NUP2105LT3G|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|
|SZNUP2105LT3G*|SOT−23<br>(Pb−Free)|10,000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**www.onsemi.com** 

**2** 

**NUP2105L, SZNUP2105L** 

## **TYPICAL PERFORMANCE CURVES** 

(TJ = 25 ° C unless otherwise noted) 

**==> picture [490 x 587] intentionally omitted <==**

**----- Start of picture text -----**<br>
110 12.0<br>100 WAVEFORM PULSE WAVEFORM<br>90 PARAMETERS 10.0 8 x 20  � s per Figure 1<br>tr = 8  � s<br>80 td = 20  � s<br>70 c−t 8.0<br>60<br>6.0<br>50 td = IPP/2<br>40<br>4.0<br>30<br>20<br>2.0<br>10<br>0 0.0<br>0 5 10 15 20 25 30 25 30 35 40 45 50<br>t, TIME ( � s) VC, CLAMPING VOLTAGE (V)<br>Figure 1. Pulse Waveform, IEC 61000−4−5 8/20  � s Figure 2. Clamping Voltage vs Peak Pulse Current<br>35 50<br>f = 1.0 MHz, Line to Ground 45<br>30 40<br>125 ° C<br>35<br>25 25 ° C 30<br>25 ° C<br>25<br>65 ° C<br>20 −40 ° C 20<br>15<br>15 10 −55 ° C<br>5 TA = +150 ° C<br>10 0<br>0 2 4 6 8 10 20 22 24 26 28 30 32 34<br>VR, REVERSE VOLTAGE (V) VBR, VOLTAGE (V)<br>Figure 3. Typical Junction Capacitance vs Figure 4. VBR versus IT Characteristics<br>Reverse Voltage<br>25 120<br>125 ° C TA = 150 ° C 100<br>20 65 ° C<br>25 ° C, −55 ° C 80<br>15<br>60<br>10<br>40<br>5<br>20<br>0 0<br>0 2 4 6 8 10 12 14 16 −60 −30 0 30 60 90 120 150 180<br>IL, LEAKAGE CURRENT (nA) TEMPERATURE ( ° C)<br>, PEAK PULSE CURRENT (A)<br>IPP<br>% OF PEAK PULSE CURRENT<br>, (mA)<br>IT<br>C, CAPACITANCE (pF)<br>, REVERSE BIAS VOLTAGE (V)<br>R PERCENT DERATING (%)<br>V<br>**----- End of picture text -----**<br>


**Figure 5. IR versus Temperature Characteristics** 

**Figure 6. Temperature Power Dissipation Derating** 

**www.onsemi.com** 

**3** 

**NUP2105L, SZNUP2105L** 

## **APPLICATIONS** 

## **Background** 

The Controller Area Network (CAN) is a serial communication protocol designed for providing reliable high speed data transmission in harsh environments. surge protection diodes provide a low cost solution to conducted and radiated Electromagnetic Interference (EMI) and Electrostatic Discharge (ESD) noise problems. The noise immunity level and reliability of CAN transceivers can be easily increased by adding external surge protection diodes to prevent transient voltage failures. 

The NUP2105L provides a surge protection solution for CAN data communication lines. The NUP2105L is a dual bidirectional surge protection device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and 

ESD. The NUP2105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed CAN networks. 

## **CAN Physical Layer Requirements** 

Table 1 provides a summary of the system requirements for a CAN transceiver. The ISO 11898−2 physical layer specification forms the baseline for most CAN systems. The transceiver requirements for the Honeywell[®] Smart Distribution Systems (SDS[®] ) and Rockwell (Allen−Bradley) DeviceNet™ high speed CAN networks are similar to ISO 11898−2. The SDS and DeviceNet transceiver requirements are similar to ISO 11898−2; however, they include minor modifications required in an industrial environment. 

**Table 1. Transceiver Requirements for High−Speed CAN Networks** 

|**Parameter**|ISO 11898−2|SDS Physical Layer<br>Specification 2.0|DeviceNet|
|---|---|---|---|
|**Min / Max Bus Voltage**<br>**(12 V System)**|−3.0 V / 16 V|11 V / 25 V|Same as ISO 11898−2|
|**Common Mode Bus Voltage**|CAN_L:<br>−2.0 V (min)<br>2.5 V (nom)<br>CAN_H:<br>2.5 V (nom)<br>7.0 V (max)|Same as ISO 11898−2|Same as ISO 11898−2|
|**Transmission Speed**|1.0 Mb/s @ 40 m<br>125 kb/s @ 500 m|Same as ISO 11898−2|500 kb/s @ 100 m<br>125 kb/s @ 500 m|
|**ESD**|Not specified, recommended<br>� �8.0 kV (contact)|Not specified, recommended<br>� �8.0 kV (contact)|Not specified, recommended<br>� �8.0 kV (contact)|
|**EMI Immunity**|ISO 7637−3, pulses ‘a’ and ‘b’|IEC 61000−4−4 EFT|Same as ISO 11898−2|
|**Popular Applications**|Automotive, Truck, Medical<br>and Marine Systems|Industrial Control Systems|Industrial Control Systems|



**www.onsemi.com** 

**4** 

**NUP2105L, SZNUP2105L** 

## **EMI Specifications** 

The EMI protection level provided by the surge protection device can be measured using the International Organization for Standardization (ISO) 7637−2 and −3 specifications that are representative of various noise sources. The ISO 7637−2 specification is used to define the susceptibility to coupled transient noise on a 12 V power supply, while ISO 7637−3 defines the noise immunity tests for data lines. The ISO 7637 tests also verify the robustness and reliability of a design by applying the surge voltage for extended durations. 

The IEC 61000−4−X specifications can also be used to quantify the EMI immunity level of a CAN system. The IEC 

61000−4 and ISO 7637 tests are similar; however, the IEC standard was created as a generic test for any electronic system, while the ISO 7637 standard was designed for vehicular applications. The IEC61000−4−4 Electrical Fast Transient (EFT) specification is similar to the ISO 7637−3 pulse 3a and b tests and is a requirement of SDS CAN systems. The IEC 61000−4−5 test is used to define the power absorption capacity of a surge protection device and long duration voltage transients such as lightning. Table 2 provides a summary of the ISO 7637 and IEC 61000−4−X test specifications. Table 3 provides the NUP2105L’s ESD test results. 

**Table 2. ISO 7637 and IEC 61000−4−X Test Specifications** 

|**Test**|**Waveform**|**Test Specifications**|**NUP2105L Results**|**Simulated Noise Source**|
|---|---|---|---|---|
|ISO 7637−2<br>12 V Power Supply Lines<br>(Note 2)|Pulse 1|Vs= 0 to −100 V<br>Imax= 10 A<br>tduration= 5000 pulses|Imax= 1.75 A<br>Vclamp_max= 31 V<br>tduration= 5000 pulses<br>Ri= 10�, tr= 1.0�s,<br>td_10%= 2000�s, t1= 2.5 s,<br>t2= 200 ms, t3= 100�s|DUT (Note 1) in parallel with<br>inductive load that is<br>disconnected from power<br>supply.|
||Pulse 2a|Vs= 0 to +50 V<br>coupled onto 14 V battery<br>Imax= 10 A<br>tduration= 5000 pulses|Imax= 9.5 A<br>Vclamp_max= 42 V<br>tduration= 5000 pulses<br>Ri = 2�, tr= 1.0�s,<br>td_10%= 50�s, t1= 2.5 s,<br>t2= 200 ms|DUT in series with inductor<br>(wire harness) that is<br>disconnected from load.|
|ISO 7637−3<br>Repetitive data line fast<br>transients (Note 3)|Pulse ‘a’|Vs= −60 V<br>Imax= 1.2 A<br>tduration= 10 minutes|Imax= 50 A (Note 4)<br>Vclamp_max= 40 V<br>tduration= 60 minutes<br>Ri= 50�, tr= 5.0 ns,<br>td_10%= 100 ns, t1= 100�s,<br>t2= 10 ms, t3= 90 ms|Switching noise of inductive<br>loads.|
||Pulse ‘b’|Vs= +40 V<br>Imax= 0.8 A<br>tduration= 10 minutes|||
|IEC 61000−4−4<br>Data Line EFT||Vopen circuit= 2.0 kV<br>Ishort circuit= 40 A<br>(Level 4 = Severe Industrial<br>Environment)<br>Ri= 50�, tr< 5.0 ns,<br>td_50%= 50 ns, tburst= 15 ms,<br>fburst= 2.0 to 5.0 kHz,<br>trepeat= 300 ms<br>tduration= 1 minute|(Note 5)|Switching noise of inductive<br>loads.|
|IEC 61000−4−5||Vopen circuit= 1.2/50�s,<br>Ishort circuit= 8/20�s<br>Ri= 50�|Imax= 8.0 A|Lightning, nonrepetitive<br>power line and load<br>switching|



1. DUT = device under test. 

2. Test specifications were taken from ISO7637−2: 2004 version. 

3. Test specifications were taken from ISO7637−3: 1995 version. 

4. DUT was tested to ISO7637−2: 2004 pulse 3a,b specification for more rigorous test. 

5. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of ISO 7637−3. 

**www.onsemi.com** 

**5** 

**NUP2105L, SZNUP2105L** 

## **Table 3. NUP2105L ESD Test Results** 

|**ESD Specification**|**Test**|**Test Level**|**Pass / Fail**|
|---|---|---|---|
|Human Body Model|Contact|16 kV|Pass|
|IEC 61000−4−2|Contact|30 kV (Note 6)|Pass|
||Non−contact (Air Discharge)|30 kV (Note 6)|Pass|



6. Test equipment maximum test voltage is 30 kV. 

## **Surge protection Diode Protection Circuit** 

surge protection diodes provide protection to a transceiver by clamping a surge voltage to a safe level. surge protection diodes have high impedance below and low impedance above their breakdown voltage. A surge protection Zener diode has its junction optimized to absorb the high peak energy of a transient event, while a standard Zener diode is designed and specified to clamp a steady state voltage. 

Figure 7 provides an example of a dual bidirectional surge protection diode array that can be used for protection with the high−speed CAN network. The bidirectional array is created from four identical Zener surge protection diodes. The clamping voltage of the composite device is equal to the 

breakdown voltage of the diode that is reversed biased, plus the diode drop of the second diode that is forwarded biased. 

**==> picture [186 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
CAN_H<br>CAN<br>Transceiver CAN_L CAN Bus<br>NUP2105L<br>**----- End of picture text -----**<br>


**Figure 7. High−Speed and Fault Tolerant CAN Surge Protection Circuit** 

Honeywell and SDS are registered trademarks of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. 

**www.onsemi.com** 

**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [494 x 668] intentionally omitted <==**

**----- Start of picture text -----**<br>
SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE  2. DRAIN  2. CATHODE  2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE  3. SOURCE  3. GATE  3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE  2. ANODE<br> 3. CATHODE  3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi’s** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative 

◊ 

**==> picture [232 x 43] intentionally omitted <==**