NUF2230XV6T1G

## NUF2230XV6 

## 2 Line EMI Filter with ESD Protection 

This device is a 2 line EMI filter array for wireless applications. Greater than −30 dB attenuation is obtained at frequencies from 800 MHz to 900 MHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all capacitors. 

## **Features** 

- EMI Filtering and ESD Protection 

- Integration of 10 Discrete Components 

- Compliance with IEC61000−4−2 (Level 4) > 8.0 kV (Contact) 

- SOT−563 Package 

- Moisture Sensitivity Level 1 

- ESD Ratings: Machine Model = C Human Body Model = 3B 

## **http://onsemi.com** 

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Pin 6 Pin 5 Pin 4<br>D(2) GND O(2)<br>Pin 1 Pin 2 Pin 3<br>D(1) GND O(1)<br>**----- End of picture text -----**<br>


- These are Pb−Free Devices 

## **Benefits** 

- Reduces EMI/RFI Emissions on a Data Line 

- Integrated Solution Offers Cost and Space Savings in a SOT−563 Package 

- Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response 

- Integrated Solution Improves System Reliability 

## **Applications** 

- EMI Filtering and ESD Protection for Data Lines 

- Wireless Phones 

- PDAs and Handheld Products 

- Notebook Computers 

- LCD Displays 

## **MARKING DIAGRAM** 

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SOT−563<br>6 23  M<br>CASE 463A<br>1 1<br>**----- End of picture text -----**<br>


- 23 = Specific Device Code 

M = Month Code = Pb−Free Package (Note: Microdot may be in either location) 

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(Note: Microdot may be in either location)<br>ORDERING INFORMATION<br>Device Package Shipping [[†]]<br>NUF2230XV6T1 SOT−563 4000/Tape & Reelpe & Reele & Reel<br>NUF2230XV6T1G SOT−563 4000/Tape & Reel<br>oa<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[[†]] NUF2230XV6T1 SOT−563 4000/Tape & Reelpe & Reele & Reel NUF2230XV6T1G SOT−563 4000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NUF2230XV6/D** 

**1** 

© Semiconductor Components Industries, LLC, 2005 **July, 2005 − Rev.3** 

**NUF2230XV6** 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|ESD Discharge IEC61000−4−2<br>Air Discharge<br>Contact Discharge|VPP|15<br>8.0|kV|
|Steady−State Power per Resistor|PR||mW|
|Steady−State Power per Package|PT||mW|
|Operating Temperature Range|TOP|−40 to 85|°C|
|Storage Temperature Range|TSTG|−55 to 150|°C|
|Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)|TL|260|°C|



Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**|(TJ= 25°C u|nless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Maximum Reverse Working Voltage|VRWM||||5.0|V|
|Breakdown Voltage|VBR|IR= 1.0 mA|6.0|7.0||V|
|Leakage Current|IR|VRWM= 3.0 V|||1.0|�A|
|Resistance|RA|IR= 20 mA|90|100|110|�|
|Capacitance (Notes 1 and 2)|Cd|VR= 2.5 V, f = 1.0 MHz||16||pF|
|Cut−Off Frequency (Note 3)|f3dB|Above this frequency,<br>appreciable attenuation occurs||125||MHz|



1. Measured at 25 ° C, VR = 2.5 V, f = 1.0 MHz. 

2. Total line capacitance is 2 times the Diode Capacitance (Cd). 

3. 50 � source and 50 � load termination. 

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**2** 

**NUF2230XV6** 

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2<br>0<br>−5<br>1.5<br>−10<br>−15<br>1<br>−20<br>−25<br>0.5<br>−30<br>−35 0<br>1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 0 1 2 3 4 5<br>FREQUENCY (Hz) REVERSE VOLTAGE (V)<br>S21 (dB)<br>NORMALIZED CAPACITANCE<br>**----- End of picture text -----**<br>


**Figure 1. Insertion Loss Characteristic (50** � **Source and 50** � **Lead Termination)** 

**Figure 2. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance, Cd @ 2.5 V)** 

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110<br>108<br>106<br>104<br>102<br>100<br>98<br>96<br>94<br>92<br>90<br>−40 −20 0 20 40 60 80<br>TEMPERATURE ( ° C)<br>) �<br>RESISTANCE (<br>**----- End of picture text -----**<br>


**Figure 3. Typical Resistance over Temperature** 

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**3** 

**NUF2230XV6** 

## **PACKAGE DIMENSIONS** 

**SOT−563, 6 LEAD** CASE 463A−01 ISSUE F 

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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>D 2. CONTROLLING DIMENSION: MILLIMETERS<br>−X− A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>L FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>6 5 4 MILLIMETERS INCHES<br>−Y−E HE DIMA 0.50 MIN NOM 0.55 MAX 0.60 0.020 MIN 0.021 NOM 0.023 MAX<br>1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011<br>C 0.08 0.12 0.18 0.003 0.005 0.007<br>m e i Se<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>b 6 5 PL C E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.08 (0.003) M X Y Le 0.10 0.5 BSC0.20 0.30 0.004 0.02 BSC0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.3<br>0.0118<br>Ty<br>0.45<br>0.0177<br>1.0<br>THe, 1.35 0.0394<br>0.0531<br>Lape<br>| __| 0.5 ___ 0.5 |<br>0.0197 0.0197<br>SCALE 20:1 mm<br>_ inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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## **PUBLICATION ORDERING INFORMATION** 

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## **LITERATURE FULFILLMENT** : 

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**NUF2230XV6/D** 

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