NTZS3151PT1G

NTZS3151P 

## MOSFET – P-Channel, Small Signal, SOT-563 

## -20 V, -950 mA 

## **Features** 

- Low RDS(on) Improving System Efficiency 

- Low Threshold Voltage 

- Small Footprint 1.6 x 1.6 mm 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

**Applications** 

- Load/Power Switches 

- • Battery Management • Cell Phones, Digital Cameras, PDAs, Pagers, etc. **MAXIMUM RATINGS** (TJ = 25J = 25 = 25 ° C unless otherwise noted.) **Parameter Symbol** 

- ~~ee ee~~ 

## **MAXIMUM RATINGS** (TJ = 25J = 25 = 25 ° C unless otherwise noted.) 

|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Symbol**<br>~~ee~~|**Value**|**Unit**|
|---|---|---|---|---|---|
|Drain−to−Source Voltage<br>~~ee ~~<br>~~ee~~<br>~~po~~|||VDSS<br> ~~ee~~<br>~~ee~~|−20<br>~~ee~~|V<br>~~ee~~|
|Gate−to−Source Voltage<br>~~ee~~<br>~~po~~|||VGS<br>~~ee~~|±8.0<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain Current<br>(Note 1)<br>~~po~~<br>~~Po~~|Steady<br>State<br>~~po~~<br>~~Po~~|TA=  25°C<br>~~po~~<br>~~Po~~|ID<br>~~Po~~|−860<br>~~Po~~|mA<br>~~Po~~|
|||TA=  70°C<br>~~po~~<br>~~Po~~||−690<br>~~Po~~||
|Power Dissipation<br>(Note 1)|Steady State||PD|170|mW|
|Continuous Drain Current<br>(Note 1)<br>~~ee~~|t<br>5 s<br>~~ee~~<br>~~ee~~|TA=  25°C<br>~~ee~~|ID<br>~~ee~~<br>~~eee~~|−950<br>~~ee~~|mA<br>~~ee~~<br>~~eee~~|
|||TA=  70°C<br>~~ee~~<br>~~ee~~||−760<br>~~ee~~<br>~~eee~~||
|Power Dissipation<br>(Note 1)<br>~~ee~~<br>~~rr~~|t<br>5 s<br>~~ee~~<br>~~rr~~<br>~~ee~~<br>~~ee~~||PD<br>~~ee~~<br>~~rr~~<br>~~eee~~|210<br>~~ee~~<br>~~rr~~<br>~~eee~~|mW<br>~~ee~~<br>~~rr~~<br>~~eee~~|
|Pulsed Drain Current<br>~~ee~~<br>~~ee~~|tp= 10 s<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||IDM<br> ~~eee~~<br>~~ee~~<br>~~eee~~|−4.0<br>~~eee~~<br>~~ee~~<br>~~eee~~|A<br>~~eee~~<br>~~ee~~<br>~~eee~~|
|Operating Junction and Storage Temperature<br>~~ee~~<br>~~ee~~|||TJ,<br>TSTG<br>~~eee~~|−55 to<br>150<br>~~eee~~|°C<br>~~eee~~|
|Source Current (Body Diode)<br>~~ee ~~<br>~~a~~<br>~~ee~~|||IS<br> ~~eee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|−360<br>~~eee~~<br>~~a~~<br>~~ee~~|mA<br>~~eee~~<br>~~a~~<br>~~ee~~|
|Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee~~<br>~~ee~~|260<br>~~ee~~|°C<br>~~ee~~|



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

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**V(BR)DSS RDS(on) Typ ID Max** 120 m @ −4.5 V −20 V 144 m @ −2.5 V −950 mA 195 m @ −1.8 V ~~=o~~ **P−Channel MOSFET** D G S ~~:~~ **MARKING** 6 **DIAGRAM** & 1 ~~_~~ TX M **SOT−563−6 CASE 463A** TX = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) ee 

## **PINOUT: SOT−563** 

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D 1 6 D<br>D 2 5 D<br>G 3 4 S<br>Top View<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 

1. Surface−mounted on FR4 board using 1 in. sq. pad size 

- (Cu. area = 1.127 in. sq. [1 oz.] including traces). 

Publication Order Number: **NTZS3151P/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **June, 2019 − Rev. 3** 

## **NTZS3151P** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted.) 

|**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−20|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||−13||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V|TJ= 25°C|||−1.0|�A|
|||VDS= −20 V|TJ= 125°C|||−5.0||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�8.0 V||||�100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.45||−1.0|V|
|Negative Threshold<br>Temperature Coefficient|VGS(TH)/TJ||||2.4||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −4.5 V, ID= −950 mA|||120|150|m�|
|||VGS= −4.5 V, ID= −770 mA|||112|142||
|||VGS= −2.5 V, ID= −670 mA|||144|200||
|||VGS= −1.8 V, ID= −200 mA|||195|240||
|Forward Transconductance|gFS|VDS= −10 V, ID= −810 mA|||3.1||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,<br>VDS= −16 V|||458||pF|
|Output Capacitance|COSS||||61|||
|Reverse Transfer Capacitance|CRSS||||38|||
|Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −10 V;<br>ID= −770 mA|||5.6||nC|
|Threshold Gate Charge|QG(TH)||||0.6|||
|Gate−to−Source Charge|QGS||||0.9|||
|Gate−to−Drain Charge|QGD||||1.2|||
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= −4.5 V, VDD= −10 V,<br>ID= −950 mA, RG= 6.0�|||5.0||ns|
|Rise Time|tr||||12|||
|Turn−Off Delay Time|td(OFF)||||23.7|||
|Fall Time|tf||||18|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −360 mA|TJ= 25°C||−0.64|−0.9|V|
||||TJ= 125°C||−0.5|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= −360 mA|||10.5||ns|



2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTZS3151P** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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4<br>3.5 −1.8 V<br>VGS = −3 V<br>3 VGS = −2 V T J = 25 ° C<br>−1.6 V<br>2.5<br>2<br>−1.4 V<br>1.5<br>1<br>−1.2 V<br>0.5<br>−1 V<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 1. On−Region Characteristics<br>0.3<br>VGS = −4.5 V<br>0.2<br>TJ = 125 ° C<br>0.1 TJ = 25 ° C<br>TJ = −55 ° C<br>0<br>0 1 2 3 4<br>−ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Drain Current and Temperature** 

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4<br>VDS ≥  −10 V<br>3.5<br>3<br>2.5<br>2<br>1.5<br>1 T J  = −55 ° C<br>0.5 25 ° C<br>125 ° C<br>0<br>0 0.5 1 1.5 2 2.5 3<br>−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 2. Transfer Characteristics<br>0.3<br>TJ = 25 ° C<br>VGS = −1.8 V<br>0.2<br>VGS = −2.5 V<br>VGS = −4.5 V<br>0.1<br>0<br>0 0.5 1 1.5 2 2.5 3 3.5 4<br>−ID, DRAIN CURRENT (AMPS)<br>DRAIN CURRENT (AMPS)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 4. On−Resistance vs. Drain Current and Gate Voltage** 

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1.8 10000<br>ID = −0.95 A VGS = 0 V<br>1.6 VGS = −4.5 V TJ = 150 ° C<br>1.4<br>TJ = 125 ° C<br>1.2 1000<br>1<br>0.8<br>0.6 100<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>DSS<br>−I<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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**3** 

**NTZS3151P** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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1000 5 30<br>900 VDS = 0 V VGS = 0 V TJ = 25 ° C QT<br>800 CRSS 4 25<br>700 −VGS<br>20<br>600 3<br>500 CISS 15<br>400 2 QGS QGD<br>10<br>300<br>200100 COSS 1 −V DS ITDJ = −0.77 A = 25 ° C 5<br>0 0 0<br>10 5 0 5 10 15 20 25 0 1 2 3 4 5 6<br>−VGS −VDS<br>QG, TOTAL GATE CHARGE (nC)<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 1.2<br>VDD = −25 V VGS = 0 V<br>ID = −0.95 A 1.0 TJ = 25 ° C<br>VGS = −4.5 V<br>100 0.8<br>0.6<br>td(off)<br>tf<br>10 tr 0.4<br>td(on)<br>0.2<br>1 0<br>1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (VOLTS) DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>GS,<br>DS,<br>−V<br>−V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|NTZS3151PT1G|SOT−563<br>(Pb−Free)|4000 / Tape & Reel|
|NTZS3151PT1H|SOT−563<br>(Pb−Free)|4000 / Tape & Reel|
|NTZS3151PT5G|SOT−563<br>(Pb−Free)|8000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

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## **DOCUMENT NUMBER:** 

## **98AON11126D** 

## **DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

## **GENERIC MARKING DIAGRAM*** 

XX M 1 

XX = Specific Device Code M = Month Code . = Pb−Free Package 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

**98AON11126D** 

**DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 2 OF 2** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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