NTZD5110NT1G

NTZD5110N 

## Small Signal MOSFET **60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563** 

## **Features** 

- Low RDS(on) Improving System Efficiency 

- Low Threshold Voltage 

## **http://onsemi.com** 

- ESD Protected Gate 

- Small Footprint 1.6 x 1.6 mm 

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V(BR)DSS RDS(on) MAX ID Max<br>1.6  @ 10 V<br>60 310 mA<br>2.5  @ 4.5 V<br>aee<br>D1 D2<br>G1 G2<br>N−Channel<br>S1 MOSFET S2<br>**----- End of picture text -----**<br>


- These are Pb−Free Devices 

## **Applications** 

- Load/Power Switches 

- Driver Circuits: Relays, Lamps, Displays, Memories, etc. 

- Battery Management/Battery Operated Systems 

- Cell Phones, Digital Cameras, PDAs, Pagers, etc. 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted.) 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Drain−to−Source Voltage|VDSS|60|V|
|a|N−Channel|
|Gate−to−Source Voltage|VGS|ee|±|20|V|S1|MOSFET|S2|
|———————————|Continuous Drain|Steady|TA =  25|°|C|ID|294|mA|
|Current (Note 1)|State|TA =  85|°|C|212|MARKING|
|DIAGRAM|
|ee|Power Dissipation|Steady State|PD|250|mW|6|
|(Note 1)|
|Continuous Drain|TA =  25|°|C|ID|310|mA|1|S7M|
|ee|Current (Note 1)|t|5 s|TA =  85|°|C|eee|225|CASE 463ASOT−563|S|
|ee|te|
|Power Dissipation|PD|280|mW|
|(Note 1)|t|5 s|S7|= Specific Device Code|
|rr|M|= Date Code|
|es|Pulsed Drain CurrentOperating Junction and Storage Temperature|es|tp|ee|= 10 s|ITDM|ee|J,|−55 to590|mA|°|C|(Note: Microdot may be in either location)|
|TSTG|150|
|ee|Source Current (Body Diode)|ee|IS|ee|350|mA|PINOUT: SOT−563|
|a|
|Lead Temperature for Soldering Purposes|TL|260|°|C|
|(1/8|″|from case for 10 s)|
|ee|S11|1|6|D11|
|a|Gate−Source ESD Rating (HBM, Method 3015)|ee|ESD|ee|1800|V|
|THERMAL RESISTANCE RATINGS|
|Parameter|Symbol|Max|Unit|G11|2|5|G22|
|Junction−to−Ambient – Steady State (Note 1)|R|JA|500|°|C/W|
|po|
|Junction−to−Ambient – t|5 s (Note 1)|447|D22|3|4|S22|
|ee|ee|

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S11 1 6 D11<br>G11 2 5 G22<br>D22 3 4 S22<br>Top View<br>**----- End of picture text -----**<br>


Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface mounted on FR4 board using 1 in sq pad size 

   - (Cu. area = 1.127 in sq [1 oz] including traces). 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 

Publication Order Number: **NTZD5110N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **December, 2013 − Rev. 6** 

## **NTZD5110N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted.) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless ot|herwise noted.)|herwise noted.)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|60|−|−|V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|−||−|71|−|mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V<br>VDS= 60 V|TJ= 25°C|−|−|1.0|�A|
||||TJ= 125°C|−|−|500||
|||VGS= 0 V<br>VDS= 50 V|TJ= 25°C|−|−|100|nA|
||||TJ= 85°C|−|−|100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=�20 V|−|−|�10|�A|
|||VDS= 0 V, VGS|=�10 V|−|−|450|nA|
|||VDS= 0 V, VGS|=�5.0 V|−|−|150|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID|= 250�A|1.0|−|2.5|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ|−||−|4.0|−|mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS=  10 V, ID|= 500 mA|−|1.19|1.6|�|
|||VGS= 4.5 V, ID|= 200 mA|−|1.33|2.5||
|Forward Transconductance|gFS|VDS= 5.0 V, ID|= 200 mA|−|80|−|S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz,<br>VDS= 20 V||−|24.5|−|pF|
|Output Capacitance|COSS|||−|4.2|−||
|Reverse Transfer Capacitance|CRSS|||−|2.2|−||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V;<br>ID= 200 mA||−|0.7|−|nC|
|Threshold Gate Charge|QG(TH)|||−|0.1|−||
|Gate−to−Source Charge|QGS|||−|0.3|−||
|Gate−to−Drain Charge|QGD|||−|0.1|−||
|**SWITCHING CHARACTERISTICS**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDD= 30 V,<br>ID= 200 mA, RG= 10�||−|12|−|ns|
|Rise Time|tr|||−|7.3|−||
|Turn−Off Delay Time|td(OFF)|||−|63.7|−||
|Fall Time|tf|||−|30.6|−||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 200 mA|TJ= 25°C|−|0.8|1.2|V|
||||TJ= 85°C|−|0.7|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 

3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

4. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTZD5110N** 

## **TYPICAL CHARACTERISTICS** 

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1.6 1.2<br>VGS = 10 V 5.0 V<br>4.5 V<br>9.0 V<br>8.0 V 4.0 V<br>1.2<br>7.0 V<br>6.0 V 0.8<br>3.5 V<br>0.8<br>TJ = 25 ° C<br>3.0 V 0.4<br>0.4<br>2.5 V<br>TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0 2 4 6 0 2 4 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>3.2 3.2<br>VGS = 4.5 V VGS = 10 V<br>2.8 TJ = 125 ° C 2.8<br>2.4 TJ = 85 ° C 2.4 TJ = 125 ° C<br>2.0 TJ = 25 ° C 2.0 TJ = 85 ° C<br>1.6 1.6 °<br>TJ = −55 ° C TJ = 25 C<br>1.2 1.2<br>TJ = −55 ° C<br>0.8 0.8<br>0.4 0.4<br>0 0<br>0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 1.2<br>ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Drain Current and Figure 4. On−Resistance vs. Drain Current and<br>Temperature Temperature<br>2.4 2.2<br>ID = 0.2 A<br>2.0 ID = 500 mA<br>1.8<br>VGS = 4.5 V<br>1.6<br>VGS = 10 V<br>1.4<br>1.2 ID = 200 mA<br>1.0<br>0.8<br>0.4 0.6<br>2 4 6 8 10 −50 −25 0 25 50 75 100 125 150<br>VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( ° C)<br>Figure 5. On−Resistance vs. Gate−to−Source Figure 6. On−Resistance Variation with<br>Voltage Temperature<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, DRAIN−TO−SOURCE<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTZD5110N** 

## **TYPICAL CHARACTERISTICS** 

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30 5<br>Ciss TJ = 25 ° C<br>4 ID = 0.2 A<br>20<br>3<br>TJ = 25 ° C<br>VGS = 0 V<br>Coss 2<br>10<br>1<br>Crss<br>0 0<br>0 4 8 12 16 20 0 0.2 0.4 0.6 0.8<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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10<br>VGS = 0 V<br>1<br>TJ = 85 ° C TJ = 25 ° C<br>0.1<br>0.01<br>0.4 0.6 0.8 1.0 1.2<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|NTZD5110NT1G|SOT−563<br>(Pb−Free)|4000 / Tape & Reel|
|NTZD5110NT5G|SOT−563<br>(Pb−Free)|8000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**4** 

**NTZD5110N** 

## **PACKAGE DIMENSIONS** 

**SOT−563, 6 LEAD** CASE 463A ISSUE F 

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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>D Y14.5M, 1982.<br>A 2. CONTROLLING DIMENSION: MILLIMETERS<br>−X− L 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>6 5 4 MILLIMETERS INCHES<br>−Y−E HE DIMA 0.50 MIN NOM 0.55 MAX 0.60 0.020 MIN 0.021 NOM 0.023 MAX<br>1 2 3 b 0.17 0.22 0.27 0.007 0.009 0.011<br>C 0.08 0.12 0.18 0.003 0.005 0.007<br>me i — — —<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>b 6 5 PL C E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.08 (0.003) M X Y Le 0.10 0.5 BSC0.20 0.30 0.004 0.02 BSC0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.3<br>0.0118<br>Tey<br>0.45<br>0.0177<br>1.0<br>THee 1.35 0.0394 s<br>0.0531<br>Lage<br>0.5 0.5<br>0.0197 0.0197<br>a<br>SCALE 20:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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**NTZD5110N/D** 

**5**