NTZD3155CT2G

## NTZD3155C 

## MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA 

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## **Features** 

- Leading Trench Technology for Low RDS(on) Performance 

- High Efficiency System Performance 

- Low Threshold Voltage 

- ESD Protected Gate 

- Small Footprint 1.6 x 1.6 mm 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

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||||
|---|---|---|
|ID Max|
|V(BR)DSS|RDS(on) Typ|(Note 1)|
|ee|0.4  @ 4.5 V|
|N−Channel|
|0.5  @ 2.5 V|540 mA|
|20 V|
|0.7  @ 1.8 V|
|0.5  @ −4.5 V|
|P−Channel|
|0.6  @ −2.5 V|−430 mA|
|−20 V|
|1.0  @ −1.8 V|

**----- End of picture text -----**<br>


## **Applications** 

- DC−DC Conversion Circuits 

**PINOUT: SOT−563** 

- Load/Power Switching with Level Shift 

**==> picture [451 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|
|•|Single or Dual Cell Li−Ion Battery Operated Systems|S11|1|6|
|•|High Speed Circuits|
|•|Cell Phones, MP3s, Digital Cameras, and PDAs|
|G11|2|5|
|MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise specified)|
|Parameter|Symbol|Value|Unit|D22|3|4|
|Drain−to−Source Voltage|VDSS|20|V|
|esa|es|ee|+t|
|es|Gate−to−Source Voltage|VGS|±|6|V|Top View|
|N−Channel Continu-|Steady|TA =  25|°|C|540|
|ous Drain Current(Note 1)|Po|State|TA =  85|°|C|es|FS|390|6|
|t|5 s|TA =  25|°|C|570|
|P−Channel Continu-|Steady|TA =  25|°|C|ID|−430|mA|SOT−563−6|1|TW M|
|ous Drain Current(Note 1)|State|TA =  85|°|C|−310|CASE 463A|
|=———Eee|t|5 s|TA =  25|ee|°|C|||−455|TW|= Specific Device Code|
|Power Dissipation|Steady|250|M|= Date Code|
|(Note 1)|State|TA =  25|°|C|PD|mW|= Pb−Free Package|
|t|5 s|280|(Note: Microdot may be in either location)|
|eS|ee|
|Pulsed Drain Current|N−Channel|1500|
|ORDERING INFORMATION|
|P−Channel|tp = 10 s|IDM|−750|mA|
|a|Operating Junction and Storage Temperature|ee|ee|TJ,|ee—|−55 to|°|C|Device|Package|
|TSTG|150|NTZD3155CT1G|
|SOT−563|
|Source Current (Body Diode)|IS|350|mA|NTZD3155CT2G|
|a|(Pb−Free)|
|eeee|Lead Temperature for Soldering Purposes (1/8” from case for 10 s)|ee|TL|260|°|C|—|NTZD3155CT5G†For information on tape and reel specifications,†For information on tape and reel specifications,|
|including part orientation and tape sizes, please|
|Stresses exceeding those listed in the Maximum Ratings table may damage the|
|device. If any of these limits are exceeded, device functionality should not be|
|Brochure, BRD8011/D.|
|assumed, damage may occur and reliability may be affected.|

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S11 1 6 D1<br>G11 2 5 G2<br>D22 3 4 S2<br>**----- End of picture text -----**<br>


**MARKING** 6 **DIAGRAM** 1 **SOT−563−6** TW M **CASE 463A** TW = Specific Device Code M = Date Code = Pb−Free Package (Note: Microdot may be in either location) ~~ee~~ **ORDERING INFORMATION Device Package Shipping**[†] NTZD3155CT1G SOT−563 4000 / Tape & Reel NTZD3155CT2G (Pb−Free) 8000 / Tape & Reel ~~—~~ NTZD3155CT5G†For information on tape and reel specifications,†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). 

Publication Order Number: **NTZD3155C/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **June, 2019 − Rev. 4** 

**NTZD3155C** 

## **Thermal Resistance Ratings** 

|**Thermal Resistance Ratings**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State (Note 2)|R�JA|500|°C/W|
|Junction−to−Ambient – t = 5 s (Note 2)||447||



2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless o|therwise specified)|therwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS=  0 V|ID= 250�A|20|||V|
|||P||ID= −250�A|−20||||
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|||||18||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A|
|||P|VGS= 0 V, VDS= −16 V||||−1.0||
|||N|VGS= 0 V, VDS= 16 V|TJ= 125°C|||2.0|�A|
|||P|VGS= 0 V, VDS= − 16V||||−5.0||
|Gate−to−Source Leakage Current|IGSS|P|VDS= 0 V, VGS=|±4.5 V|||�2.0|�A|
|||N|||||�5.0||
|**ON CHARACTERISTICS**(Note 3)|||||||||
|Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.45||1.0|V|
|||P||ID= −250�A|−0.45||−1.0||
|Gate Threshold<br>Temperature Coefficient|VGS(TH)/TJ|||||−1.9||−mV/°C|
|Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V, ID=|540 mA||0.4|0.55|�|
|||P|VGS= −4.5V, ID= −430 mA|||0.5|0.9||
|||N|VGS= 2.5 V, ID= 500 mA|||0.5|0.7||
|||P|VGS= −2.5V, ID= −300 mA|||0.6|1.2||
|||N|VGS= 1.8 V, ID= 350 mA|||0.7|0.9||
|||P|VGS= −1.8V, ID= −150 mA|||1.0|2.0||
|Forward Transconductance|gFS|N|VDS= 10 V, ID= 540 mA|||1.0||S|
|||P|VDS= −10 V, ID= −430 mA|||1.0|||
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||||
|Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V<br>VDS= 16 V|||80|150|pF|
|Output Capacitance|COSS|||||13|25||
|Reverse Transfer Capacitance|CRSS|||||10|20||
|Input Capacitance|CISS|P|f = 1 MHz, VGS= 0 V<br>VDS= −16 V|||105|175||
|Output Capacitance|COSS|||||15|30||
|Reverse Transfer Capacitance|CRSS|||||10|20||



3. Pulse Test: pulse width � 300 � s, duty cycle � 2% 

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**2** 

## **NTZD3155C** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C|unles|s otherwise specified)|s otherwise specified)|||||
|---|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**CHARGES, CAPACITANCES AND**|**GATE RESISTANCE**||||||||
|Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= −10 V; ID= 540 mA|||1.5|2.5|nC|
|Threshold Gate Charge|QG(TH)|||||0.1|||
|Gate−to−Source Charge|QGS|||||0.2|||
|Gate−to−Drain Charge|QGD|||||0.35|||
|Total Gate Charge|QG(TOT)|P|VGS= −4.5 V, VDS= 10 V; ID= −380 mA|||1.7|2.5||
|Threshold Gate Charge|QG(TH)|||||0.1|||
|Gate−to−Source Charge|QGS|||||0.3|||
|Gate−to−Drain Charge|QGD|||||0.4|||
|**SWITCHING CHARACTERISTICS (VGS =  V)**(Note 4)|||||||||
|Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= −10 V, ID= 540 mA,<br>RG= 10�|||6.0||ns|
|Rise Time|tr|||||4.0|||
|Turn−Off Delay Time|td(OFF)|||||16|||
|Fall Time|tf|||||8.0|||
|Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= 10 V, ID= −215 mA,<br>RG= 10�|||10|||
|Rise Time|tr|||||12|||
|Turn−Off Delay Time|td(OFF)|||||35|||
|Fall Time|tf|||||19|||
|**Drain−Source Diode Characteristics**|||||||||
|Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 350 mA||0.7|1.2|V|
|||P||IS= −350 mA||−0.8|−1.2||
|Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/dt = 100 A/�s|IS= 350 mA||6.5||ns|
|||P||IS= −350 mA||13|||



4. Switching characteristics are independent of operating junction temperatures 

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**3** 

**NTZD3155C** 

## **N−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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1.2 1.8<br>1.0 5.5 V1.8 V TJ = 25 ° C 1.6 VDS �  10 V TJ = −55 ° C<br>1.4<br>VGS = 1.6 V TJ = 100 ° C<br>0.8 1.2<br>VGS = 2.0 V to 2.2 V<br>1.0<br>0.6<br>0.8<br>VGS = 1.4 V<br>0.4 0.6<br>0.4<br>0.2 VGS = 1.2 V TJ = 25 ° C<br>0.2<br>VGS = 1.0 V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>1.0 0.9<br>ID = 0.54 A TJ = 25 ° C<br>0.9 TJ = 25 ° C 0.8<br>0.8 VGS = 1.8 V<br>0.7<br>0.7<br>0.6<br>0.6<br>VGS = 2.5 V<br>0.5<br>0.5<br>VGS = 4.5 V<br>0.4<br>0.4<br>0.3 0.3<br>1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current<br>Gate−to−Source Voltage and Gate Voltage<br>2 1000<br>VGS = 0 V<br>1.8 ID = 0.54 A<br>VGS = 4.5 V TJ = 150 ° C<br>1.6<br>1.4<br>100<br>1.2<br>1<br>0.8 TJ = 100 ° C<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature versus Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE<br>RESISTANCE ( RESISTANCE (<br>, DRAIN−TO−SOURCE CURRENT DS(on)<br>DS(on) R<br>R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCEDS(on) IDSS<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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**4** 

**NTZD3155C** 

## **N−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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200 5 20<br>TJ = 25 ° C QT<br>4 VDS 16<br>150<br>VGS<br>3 12<br>100 VGS = 0 V<br>CISS<br>2 8<br>QGS QGD<br>50<br>V DS  = 0 V<br>1 ID = 0.54 A 4<br>C OSS TJ = 25 ° C<br>0<br>0 0<br>0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS Qg, TOTAL GATE CHARGE (nC)<br>DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)<br>GS DS<br>V V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** 

**Figure 7. Capacitance Variation** 

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100 0.6<br>VDS = 10 V VGS = 0 V<br>ID = 0.2 A 0.5 TJ = 25 ° C<br>VGS = 4.5 V<br>0.4<br>td(OFF)<br>10 tf 0.3<br>td(ON)<br>tr 0.2<br>0.1<br>1 0<br>1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation versus Gate Resistance** 

**Figure 10. Diode Forward Voltage versus Current** 

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**5** 

**NTZD3155C** 

## **P−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
1 VGS = −2 V TJ = 25 ° C<br>−1.6 V<br>0.8<br>V GS  = −1.8 V<br>0.6<br>−1.4 V<br>0.4<br>−1.2 V<br>0.2<br>−1 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics<br>0.8<br>ID = −0.43 A<br>0.75 T J  = 25 ° C<br>0.7<br>0.65<br>0.6<br>0.55<br>0.5<br>0.45<br>0.4<br>1 2 3 4 5 6<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>DRAIN CURRENT (A)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 3. On−Resistance vs. Gate−to−Source Voltage** 

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1<br>V DS ≥ −10 V<br>0.8<br>0.6<br>0.4<br>0.2 TJ = −55 ° C<br>25 ° C<br>100 ° C<br>0<br>0 0.5 1 1.5 2 2.5<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 2. Transfer Characteristics<br>1.4<br>TJ = 25 ° C<br>1.3<br>1.2 VGS = −1.8 V<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>VGS = −2.5 V<br>0.6<br>0.5<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>−ID, DRAIN CURRENT (A)<br>DRAIN CURRENT (A)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br>


**Figure 4. On−Resistance vs. Drain Current and Gate Voltage** 

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1.6 10000<br>ID = −0.43 A VGS = 0 V<br>VGS = −4.5 V<br>1.4 TJ = 150 ° C<br>1000<br>1.2<br>1 TJ = 100 ° C<br>100<br>0.8<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>DSS<br>−I<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**6** 

**NTZD3155C** 

**P−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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**----- Start of picture text -----**<br>
250 5 10<br>VGS = 0 V TJ = 25 ° C QT 9<br>200 4 8<br>−VDS −VGS<br>7<br>150 CISS 3 6<br>5<br>100 2 4<br>COSS QGS QGD 3<br>50 CRSS 1 ID = −0.215 A 2<br>T J  = 25 ° C 1<br>0 0 0<br>0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>100 0.6<br>VGS = 0 V<br>TJ = 25 ° C<br>td(OFF)<br>tf 0.4<br>10 tr<br>td(ON)<br>0.2<br>VDD = −10 V<br>ID = −0.215 A<br>VGS = −4.5 V<br>1 0<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (V)<br>GS,  DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>−V DS,<br>−V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

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**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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6<br>1<br>**----- End of picture text -----**<br>


## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

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SCALE 4:1<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER:** 

## **98AON11126D** 

## **DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

## **SOT−563, 6 LEAD** CASE 463A ISSUE H 

## DATE 26 JAN 2021 

## **GENERIC MARKING DIAGRAM*** 

XX M 1 

XX = Specific Device Code M = Month Code . = Pb−Free Package 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ " ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

**98AON11126D** 

**DESCRIPTION: SOT−563, 6 LEAD** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

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