Image not available
Illustrative purposes only
NTZD3155CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 540 mA, 540 mA, 0.4 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:540mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Po
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-563
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 250mW
- Power Dissipation P Channel: 250mW
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: 20V
- Continuous Drain Current Id N Channel: 540mA
- Continuous Drain Current Id P Channel: 540mA
- Drain Source On State Resistance N Channel: 0.4ohm
- Drain Source On State Resistance P Channel: 0.4ohm
| Delivery and price | |
|---|---|
| Units per pack | 2000 |
| Price | 0.098 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
NTZD3155C ## Small Signal MOSFET ## **Complementary 20 V, 540 mA / −430 mA, with ESD protection, SOT−563 package.** ## **Features** - Leading Trench Technology for Low RDS(on) Performance - High Efficiency System Performance - Low Threshold Voltage - ESD Protected Gate - Small Footprint 1.6 x 1.6 mm - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ## **Applications** - DC−DC Conversion Circuits **www.onsemi.com** |**V(BR)DSS**<br>~~|~~|**RDS(on) Typ**<br>~~|~~|**ID Max**<br>(Note 1)<br>~~|~~| |---|---|---| |N−Channel<br>20 V<br>~~=~~|0.4 @ 4.5 V<br>0.5 @ 2.5 V<br>0.7 @ 1.8 V<br>~~=~~|540 mA<br>~~=~~| |P−Channel<br>−20 V<br>~~==~~|0.5 @ −4.5 V<br>0.6 @ −2.5 V<br>1.0 @ −1.8 V<br>~~==~~|−430 mA<br>~~==~~| - Load/Power Switching with Level Shift - Single or Dual Cell Li−Ion Battery Operated Systems **PINOUT: SOT−563** - High Speed Circuits |• High Speed Circuits<br>• Cell Phones, MP3s, Digital Cameras, and PDAs<br>**MAXIMUM RATINGS**(TJ= 25°C unless otherwise specified)<br>**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>20<br>V<br>Gate−to−Source Voltage<br>VGS<br>±6<br>V<br>N−Channel Continu-<br>ous Drain Current<br>(Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>540<br>mA<br>TA= 85°C<br>390<br>t<br>5 s<br>TA= 25°C<br>570<br>P−Channel Continu-<br>ous Drain Current<br>(Note 1)<br>Steady<br>State<br>TA= 25°C<br>−430<br>TA= 85°C<br>−310<br>t<br>5 s<br>TA= 25°C<br>−455<br>Power Dissipation<br>(Note 1)<br>Steady<br>State<br>TA= 25°C<br>PD<br>250<br>mW<br>t<br>5 s<br>280<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~pF |~~<br>~~-~~<br>~~FETE~~<br>~~p= |~~<br>~~|~~<br>~~ee ~~ee<br>~~a~~<br>~~ee~~<br>~~|~~|**SOT−563−6**<br>**CASE 463A**<br>1<br>6<br>S1<br>G1<br>D2<br>TW<br>M<br>~~+E~~| |---|---| |Pulsed Drain Current<br>N−Channel<br>tp= 10 s<br>IDM<br>1500<br>mA<br>P−Channel<br>−750<br>Operating Junction and Storage Temperature<br>TJ,<br>TSTG<br>−55 to<br>150<br>°C<br>Source Current (Body Diode)<br>IS<br>350<br>mA<br>Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>TL<br>260<br>°C<br>Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.<br>~~a ee ee~~<br>~~|~~<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee ee eee —~~|**Device**<br>**ORDERING INFORMATION**<br>NTZD3155CT1G<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>NTZD3155CT2G<br>(Note: Microdot may be in either location)<br>NTZD3155CT5G<br>~~eee~~<br>~~—~~| **==> picture [149 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> S1 1 6 D1<br>G1 2 5 G2<br>D2 3 4 S2<br>+E<br>Top View<br>MARKING<br>6 DIAGRAM<br>1<br>SOT−563−6 TW M<br>CASE 463A<br>TW = Specific Device Code<br>M = Date Code<br>~<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>eee<br>**----- End of picture text -----**<br> **ORDERING INFORMATION** **==> picture [186 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> Device Package Shipping [†]<br>NTZD3155CT1G<br>SOT−563 4000 / Tape & Reel<br>NTZD3155CT2G<br>(Pb−Free)<br>NTZD3155CT5G 8000 / Tape & Reel<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specifications<br>Brochure, BRD8011/D.<br>**----- End of picture text -----**<br> 1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). Publication Order Number: **NTZD3155C/D** **1** © Semiconductor Components Industries, LLC, 2014 **October, 2014 − Rev. 4** **NTZD3155C** ## **Thermal Resistance Ratings** |**Thermal Resistance Ratings**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Max**|**Unit**| |Junction−to−Ambient – Steady State (Note 2)|R�JA|500|°C/W| |Junction−to−Ambient – t = 5 s (Note 2)||447|| 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C u|nless o|therwise specified)|therwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|N|VGS= 0 V|ID= 250�A|20|||V| |||P||ID= −250�A|−20|||| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|||||18||mV/°C| |Zero Gate Voltage Drain Current|IDSS|N|VGS= 0 V, VDS= 16 V|TJ= 25°C|||1.0|�A| |||P|VGS= 0 V, VDS= −16 V||||−1.0|| |||N|VGS= 0 V, VDS= 16 V|TJ= 125°C|||2.0|�A| |||P|VGS= 0 V, VDS= − 16V||||−5.0|| |Gate−to−Source Leakage Current|IGSS|P|VDS= 0 V, VGS=|±4.5 V|||�2.0|�A| |||N|||||�5.0|| |**ON CHARACTERISTICS**(Note 3)||||||||| |Gate Threshold Voltage|VGS(TH)|N|VGS= VDS|ID= 250�A|0.45||1.0|V| |||P||ID= −250�A|−0.45||−1.0|| |Gate Threshold<br>Temperature Coefficient|VGS(TH)/TJ|||||−1.9||−mV/°C| |Drain−to−Source On Resistance|RDS(on)|N|VGS= 4.5 V, ID=|540 mA||0.4|0.55|�| |||P|VGS= −4.5V, ID= −430 mA|||0.5|0.9|| |||N|VGS= 2.5 V, ID= 500 mA|||0.5|0.7|| |||P|VGS= −2.5V, ID= −300 mA|||0.6|1.2|| |||N|VGS= 1.8 V, ID= 350 mA|||0.7|0.9|| |||P|VGS= −1.8V, ID= −150 mA|||1.0|2.0|| |Forward Transconductance|gFS|N|VDS= 10 V, ID= 540 mA|||1.0||S| |||P|VDS= −10 V, ID= −430 mA|||1.0||| |**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||| |Input Capacitance|CISS|N|f = 1 MHz, VGS= 0 V<br>VDS= 16 V|||80|150|pF| |Output Capacitance|COSS|||||13|25|| |Reverse Transfer Capacitance|CRSS|||||10|20|| |Input Capacitance|CISS|P|f = 1 MHz, VGS= 0 V<br>VDS= −16 V|||105|175|| |Output Capacitance|COSS|||||15|30|| |Reverse Transfer Capacitance|CRSS|||||10|20|| 3. Pulse Test: pulse width � 300 � s, duty cycle � 2% Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **2** ## **NTZD3155C** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERIST**|**ICS**(TJ= 25°C|unles|s otherwise specified)|s otherwise specified)||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**N/P**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**CHARGES, CAPACITANCES AND**|**GATE RESISTANCE**|||||||| |Total Gate Charge|QG(TOT)|N|VGS= 4.5 V, VDS= −10 V; ID= 540 mA|||1.5|2.5|nC| |Threshold Gate Charge|QG(TH)|||||0.1||| |Gate−to−Source Charge|QGS|||||0.2||| |Gate−to−Drain Charge|QGD|||||0.35||| |Total Gate Charge|QG(TOT)|P|VGS= −4.5 V, VDS= 10 V; ID= −380 mA|||1.7|2.5|| |Threshold Gate Charge|QG(TH)|||||0.1||| |Gate−to−Source Charge|QGS|||||0.3||| |Gate−to−Drain Charge|QGD|||||0.4||| |**SWITCHING CHARACTERISTICS (VGS = V)**(Note 4)||||||||| |Turn−On Delay Time|td(ON)|N|VGS= 4.5 V, VDD= −10 V, ID= 540 mA,<br>RG= 10�|||6.0||ns| |Rise Time|tr|||||4.0||| |Turn−Off Delay Time|td(OFF)|||||16||| |Fall Time|tf|||||8.0||| |Turn−On Delay Time|td(ON)|P|VGS= −4.5 V, VDD= 10 V, ID= −215 mA,<br>RG= 10�|||10||| |Rise Time|tr|||||12||| |Turn−Off Delay Time|td(OFF)|||||35||| |Fall Time|tf|||||19||| |**Drain−Source Diode Characteristics**||||||||| |Forward Diode Voltage|VSD|N|VGS= 0 V, TJ= 25°C|IS= 350 mA||0.7|1.2|V| |||P||IS= −350 mA||−0.8|−1.2|| |Reverse Recovery Time|tRR|N|VGS= 0 V,<br>dIS/dt = 100 A/�s|IS= 350 mA||6.5||ns| |||P||IS= −350 mA||13||| 4. Switching characteristics are independent of operating junction temperatures **www.onsemi.com** **3** **NTZD3155C** ## **N−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 1.8<br>1.0 5.5 V1.8 V TJ = 25 ° C 1.6 VDS � 10 V TJ = −55 ° C<br>1.4<br>VGS = 1.6 V TJ = 100 ° C<br>0.8 1.2<br>VGS = 2.0 V to 2.2 V<br>1.0<br>0.6<br>0.8<br>VGS = 1.4 V<br>0.4 0.6<br>0.4<br>0.2 VGS = 1.2 V TJ = 25 ° C<br>0.2<br>VGS = 1.0 V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>1.0 0.9<br>ID = 0.54 A TJ = 25 ° C<br>0.9 T J = 25 ° C 0.8<br>0.8 VGS = 1.8 V<br>0.7<br>0.7<br>0.6<br>0.6<br>VGS = 2.5 V<br>0.5<br>0.5<br>VGS = 4.5 V<br>0.4<br>0.4<br>0.3 0.3<br>1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current<br>Gate−to−Source Voltage and Gate Voltage<br>2 1000<br>VGS = 0 V<br>1.8 ID = 0.54 A<br>VGS = 4.5 V TJ = 150 ° C<br>1.6<br>1.4<br>100<br>1.2<br>1<br>0.8 TJ = 100 ° C<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE<br>RESISTANCE ( RESISTANCE (<br>, DRAIN−TO−SOURCE CURRENT DS(on)<br>DS(on) R<br>R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCEDS(on) IDSS<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current versus Voltage** **www.onsemi.com** **4** **NTZD3155C** ## **N−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [492 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 200 5 20<br>TJ = 25 ° C QT<br>4 VDS 16<br>150<br>VGS<br>3 12<br>100 VGS = 0 V<br>CISS<br>2 8<br>QGS QGD<br>50<br>V DS = 0 V 1 ID = 0.54 A 4<br>C OSS TJ = 25 ° C<br>0<br>0 0<br>0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VDS Qg, TOTAL GATE CHARGE (nC)<br>DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)<br>GS DS<br>V V<br>**----- End of picture text -----**<br> **Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** **Figure 7. Capacitance Variation** **==> picture [488 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100 0.6<br>VDS = 10 V VGS = 0 V<br>ID = 0.2 A 0.5 TJ = 25 ° C<br>VGS = 4.5 V<br>0.4<br>td(OFF)<br>10 tf 0.3<br>td(ON)<br>tr 0.2<br>0.1<br>1 0<br>1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation versus Gate Resistance** **Figure 10. Diode Forward Voltage versus Current** **www.onsemi.com** **5** **NTZD3155C** ## **P−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [237 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 1 VGS = −2 V TJ = 25 ° C<br>−1.6 V<br>0.8<br>VGS = −1.8 V<br>0.6<br>−1.4 V<br>0.4<br>−1.2 V<br>0.2<br>−1 V<br>0<br>0 1 2 3 4 5 6 7 8 9 10<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics<br>0.8<br>ID = −0.43 A<br>0.75 TJ = 25 ° C<br>0.7<br>0.65<br>0.6<br>0.55<br>0.5<br>0.45<br>0.4<br>1 2 3 4 5 6<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>DRAIN CURRENT (A)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br> **Figure 3. On−Resistance vs. Gate−to−Source Voltage** **==> picture [238 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>V DS ≥ −10 V<br>0.8<br>0.6<br>0.4<br>0.2 TJ = −55 ° C<br>25 ° C<br>100 ° C<br>0<br>0 0.5 1 1.5 2 2.5<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 2. Transfer Characteristics<br>1.4<br>TJ = 25 ° C<br>1.3<br>1.2 VGS = −1.8 V<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>VGS = −2.5 V<br>0.6<br>0.5<br>0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>−ID, DRAIN CURRENT (A)<br>DRAIN CURRENT (A)<br>D,<br>−I<br>) �<br>DRAIN−TO−SOURCE RESISTANCE (<br>DS(on),<br>R<br>**----- End of picture text -----**<br> **Figure 4. On−Resistance vs. Drain Current and Gate Voltage** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 10000<br>ID = −0.43 A VGS = 0 V<br>VGS = −4.5 V<br>1.4 TJ = 150 ° C<br>1000<br>1.2<br>1 TJ = 100 ° C<br>100<br>0.8<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, LEAKAGE (nA)<br>DRAIN−TO−SOURCE<br>DSS<br>−I<br>DS(on),<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **6** **NTZD3155C** **P−CHANNEL TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) **==> picture [493 x 408] intentionally omitted <==** **----- Start of picture text -----**<br> 250 5 10<br>VGS = 0 V TJ = 25 ° C QT 9<br>200 4 8<br>−VDS −VGS<br>7<br>150 CISS 3 6<br>5<br>100 2 4<br>COSS QGS QGD 3<br>50 CRSS 1 ID = −0.215 A 2<br>T J = 25 ° C 1<br>0 0 0<br>0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2<br>DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>100 0.6<br>VGS = 0 V<br>TJ = 25 ° C<br>td(OFF)<br>tf 0.4<br>10 tr<br>td(ON)<br>0.2<br>VDD = −10 V<br>ID = −0.215 A<br>VGS = −4.5 V<br>1 0<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>GATE−TO−SOURCE VOLTAGE (V)<br>GS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)<br>−V DS,<br>−V<br>t, TIME (ns)<br>, SOURCE CURRENT (AMPS)<br>S<br>−I<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **Figure 10. Diode Forward Voltage vs. Current** **www.onsemi.com** **7** **NTZD3155C** ## **PACKAGE DIMENSIONS** **SOT−563, 6 LEAD** CASE 463A ISSUE F **==> picture [181 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A<br>−X−<br>L<br>6 5 4<br>E<br>−Y− HE<br>1 2 3<br>me tf<br>b 6 5 PL C<br>e 0.08 (0.003) M X Y<br>**----- End of picture text -----**<br> **==> picture [158 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.50 0.55 0.60 0.020 0.021 0.023<br>b 0.17 0.22 0.27 0.007 0.009 0.011<br>—< C 0.08 0.12 — 0.18 0.003 — 0.005 — 0.007<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.5 BSC 0.02 BSC<br>L 0.10 0.20 0.30 0.004 0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [153 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 0.3<br>0.0118<br>ria<br>0.45<br>0.0177<br>1.0<br>THe 1.35 0.0394 e<br>0.0531<br>Laaa<br>0.5 0.5<br>0.0197 0.0197<br>a<br>SCALE 20:1 mm<br>(—) inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : **www.onsemi.com** **NTZD3155C/D** **8**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →