NTZD3154NT1G

NTZD3154N 

## Small Signal MOSFET 

## **20 V, 540 mA, Dual N−Channel** 

## **Features** 

- Low RDS(on) Improving System Efficiency 

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- Low Threshold Voltage 

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V(BR)DSS RDS(on) Typ ID Max  (Note 1)<br>400 m  @ 4.5 V<br>20 500 m  @ 2.5 V 540 mA<br>700 m  @ 1.8 V<br>==<br>D1 D2<br>G1 G2<br>N−Channel<br>S1 MOSFET S2<br>MARKING<br>DIAGRAM<br>6<br>& 1 _ TV M<br>SOT−563−6<br>CASE 463A<br>TV = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- Small Footprint 1.6 x 1.6 mm 

- ESD Protected Gate 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Load/Power Switches 

- Power Supply Converter Circuits 

- Battery Management 

- Cell Phones, Digital Cameras, PDAs, Pagers, etc. 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted.) 

~~a~~ **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 20 V ~~ee~~ Gate−to−Source Voltage VGS ± 7.0 V 6 ~~es~~ Continuous Drain Current (Note 1) SteadyState TTAA =  25 =  85 °° CC ~~ee~~ ID 540390 mA ~~a ee~~ Power Dissipation PD 250 mW Steady State (Note 1) Continuous Drain Current TA =  25 ° C 570 mA (Note 1) t 5 s TA =  85 ° C ID 410 ~~a ee~~ Power Dissipation PD 280 mW t 5 s (Note 1) ~~rr~~ Pulsed Drain Current tp = 10 s IDM 1.5 A ~~es~~ Operating Junction and Storage Temperature ~~**e** eeeee~~ TJ, −55 to ° C ~~eee~~ TSTG 150 S11 Source Current (Body Diode) IS 350 mA ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C ~~ee~~ (1/8 ″ from case for 10 s) ~~ee ee~~ G11 **THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit** D22 Junction−to−Ambient – Steady State 500 ° C/W ~~oo~~ (Note 1) R JA Junction−to−Ambient – t 5 s (Note 1) 447 ~~a |» } |~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **PINOUT: SOT−563** 

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S11 1 6 D1<br>G11 2 5 G2<br>D22 3 4 S2<br>Top View<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 

1. Surface mounted on FR4 board using 1 in sq pad size 

   - (Cu. area = 1.127 in sq [1 oz] including traces). 

Publication Order Number: **NTZD3154N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **December, 2014 − Rev. 3** 

## **NTZD3154N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted.) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless o|therwise noted.)|therwise noted.)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||20|−|−|V|
|Drain−to−Source Breakdown Voltage Tem-<br>perature Coefficient|V(BR)DSS/TJ|−||−|14|−|mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V<br>VDS= 16 V|TJ= 25°C|−|−|1.0|�A|
||||TJ= 125°C|−|−|5.0||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�4.5 V||−|−|�5.0|�A|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||0.45|−|1.0|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ|−||−|2.0|−|mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 4.5 V, ID= 540 mA||−|0.4|0.55|�|
|||VGS= 2.5 V, ID= 500 mA||−|0.5|0.7||
|||VGS= 1.8 V, ID= 350 mA||−|0.7|0.9||
|Forward Transconductance|gFS|VDS= 10 V, ID= 540 mA||−|1.0|−|S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1.0 MHz, VDS= 16 V||−|80|150|pF|
|Output Capacitance|COSS|||−|13|25||
|Reverse Transfer Capacitance|CRSS|||−|10|20||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 10 V; ID= 540 mA||−|1.5|2.5|nC|
|Threshold Gate Charge|QG(TH)|||−|0.1|−||
|Gate−to−Source Charge|QGS|||−|0.2|−||
|Gate−to−Drain Charge|QGD|||−|0.35|−||
|**SWITCHING CHARACTERISTICS, VGS = V**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDD= 10 V, ID= 540 mA,<br>RG= 10�||−|6.0|−|ns|
|Rise Time|tr|||−|4.0|−||
|Turn−Off Delay Time|td(OFF)|||−|16|−||
|Fall Time|tf|||−|8.0|−||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 350 mA|TJ= 25°C|−|0.7|1.2|V|
||||TJ= 125°C|−|0.6|−||
|Reverse Recovery Time|tRR|VGS= 0 V, dISD/dt= 100 A/�s, IS= 350 mA||−|6.5|−|ns|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 

3. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

4. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTZD3154N** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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1.2 1.8<br>1.0 5.5 V1.8 V TJ = 25 ° C 1.6 VDS �  10 V TJ = −55 ° C<br>1.4<br>VGS = 1.6 V TJ = 100 ° C<br>0.8 1.2<br>VGS = 2.0 V to 2.2 V<br>1.0<br>0.6<br>0.8<br>VGS = 1.4 V<br>0.4 0.6<br>0.4<br>0.2 VGS = 1.2 V TJ = 25 ° C<br>0.2<br>VGS = 1.0 V<br>0 0<br>0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>1.0 0.9<br>ID = 0.54 A TJ = 25 ° C<br>0.9 T J  = 25 ° C 0.8<br>0.8 VGS = 1.8 V<br>0.7<br>0.7<br>0.6<br>0.6<br>VGS = 2.5 V<br>0.5<br>0.5<br>VGS = 4.5 V<br>0.4<br>0.4<br>0.3 0.3<br>1 2 3 4 5 6 0.2 0.4 0.6 0.8 1 1.2<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance versus Figure 4. On−Resistance versus Drain Current<br>Gate−to−Source Voltage and Gate Voltage<br>2 1000<br>VGS = 0 V<br>1.8 ID = 0.54 A<br>VGS = 4.5 V TJ = 150 ° C<br>1.6<br>1.4<br>100<br>1.2<br>1<br>0.8 TJ = 100 ° C<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE<br>RESISTANCE ( RESISTANCE (<br>, DRAIN−TO−SOURCE CURRENT DS(on)<br>DS(on) R<br>R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCEDS(on) IDSS<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current versus Voltage** 

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**3** 

**NTZD3154N** 

## **TYPICAL PERFORMANCE CURVES** (TJ = 25 ° C unless otherwise noted) 

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200 5 20<br>TJ = 25 ° C QT<br>150 VGS = 0 V 4 VDS 16<br>VGS<br>3 12<br>100 CRSS<br>CISS<br>2 8<br>QGS QGD<br>50<br>1 ID = 0.54 A 4<br>VDS = 0 V C OSS TJ = 25 ° C<br>0<br>0 0<br>5 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6<br>VGS VDS<br>Qg, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V) , DRAIN−TO−SOURCE VOLTAGE (V)<br>GS DS<br>V V<br>**----- End of picture text -----**<br>


GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 

**Figure 7. Capacitance Variation** 

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100<br>VDS = 10 V<br>ID = 0.2 A<br>VGS = 4.5 V<br>td(OFF<br>)<br>10 tf<br>td(ON)<br>tr<br>1<br>1 10 100<br>RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation versus Gate Resistance** 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge** 

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0.6<br>VGS = 0 V<br>0.5 TJ = 25 ° C<br>0.4<br>0.3<br>0.2<br>0.1<br>0<br>0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage versus Current** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|NTZD3154NT1G|SOT−563<br>(Pb−Free)|4000 / Tape & Reel|
|NTZD3154NT1H|||
|NTZD3154NT2G|||
|NTZD3154NT2H|||
|NTZD3154NT5G||8000 / Tape & Reel|
|NTZD3154NT5H|||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**4** 

**NTZD3154N** 

## **PACKAGE DIMENSIONS** 

**SOT−563, 6 LEAD** CASE 463A ISSUE F 

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D<br>A<br>−X−<br>L<br>6 5 4<br>E<br>−Y− HE<br>1 2 3<br>me tf<br>b 6 5 PL C<br>e 0.08 (0.003) M X Y<br>**----- End of picture text -----**<br>


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NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH THICKNESS. MINIMUM LEAD THICKNESS<br>IS THE MINIMUM THICKNESS OF BASE MATERIAL.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.50 0.55 0.60 0.020 0.021 0.023<br>b 0.17 0.22 0.27 0.007 0.009 0.011<br>—— C 0.08 0.12 0.18 — 0.003 0.005 — 0.007<br>D 1.50 1.60 1.70 0.059 0.062 0.066<br>E 1.10 1.20 1.30 0.043 0.047 0.051<br>e 0.5 BSC 0.02 BSC<br>L 0.10 0.20 0.30 0.004 0.008 0.012<br>HE 1.50 1.60 1.70 0.059 0.062 0.066<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

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0.3<br>0.0118<br>elie<br>0.45<br>0.0177<br>1.0<br>THe 1.35 0.0394 e<br>0.0531<br>Laag<br>0.5 0.5<br>0.0197 0.0197<br>i<br>SCALE 20:1 mm<br>(—) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**NTZD3154N/D** 

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