NTUD3174NZT5G

## NTUD3174NZ 

## Small Signal MOSFET 

## **20 V, 220 mA, Dual N−Channel, 1.0 mm x 1.0 mm SOT−963 Package** 

## **Features** 

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- Dual N−Channel MOSFET 

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• Offers a Low R  Solution in the Ultra Small 1.0 x 1.0 mm<br>Package DS(ON) ee V(BR)DSS RDS(ON) ee  MAX ID ee  Max<br>1.5  @ 4.5 V<br>• 1.5 V Gate Voltage Rating<br>2.0  @ 2.5 V<br>• Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely 20 V 0.22 A<br>3.0  @ 1.8 V<br>Thin Environments such as Portable Electronics<br>• This is a Pb−Free Device SS 4.5  @ 1.5 V<br>Applications D1 D2<br>• General Purpose Interfacing Switch<br>• Optimized for Power Management in Ultra Portable Equipment<br>• Analog Switch G1 G2<br>MAXIMUM RATINGS  (TJ = 25 ° C unless otherwise specified)<br>N−Channel<br>Parameter Symbol Value Unit S1 MOSFET S2<br>Drain−to−Source Voltage VDSS 20 V<br>a<br>Gate−to−Source Voltage VGS ± 8 V PINOUT: SOT−963<br>a<br>Continuous Drain Steady TA =  25 ° C 220<br>Current (Note 1) State TA =  85 ° C ID 160 mA S1 1 6 D1<br>t   5 s TA =  25 ° C 280<br>=n<br>fF | ||<br>Power Dissipation  Steady 125<br>(Note 1) State TA =  25 ° C PD mW G1 2 5 G2<br>t   5 s 200<br>a = | | ||<br>se Pulsed Drain Current tp = 10 s IDM 800 mA<br>Operating Junction and Storage Temperature TJ, −55 to ° C D2 3 4 S2<br>TSTG 150<br>ee Source Current (Body Diode) (Note 2) eeee IS 200 mA ian Top View<br>es<br>Lead Temperature for Soldering Purposes  260 ° C<br>(1/8” from case for 10 s) TL<br>ee MARKING<br>ee<br>Stresses exceeding Maximum Ratings may damage the device. Maximum DIAGRAM<br>Ratings are stress ratings only. Functional operation above the RecommendedOperating Conditions is not implied. Extended exposure to stresses above the & poo<br>Recommended Operating Conditions may affect device reliability. 6 M<br>1. Surface−mounted on FR4 board using the minimum recommended pad size, SOT−963<br>1 oz Cu. CASE 527AD 1<br>2. Pulse Test: pulse width  < 300 s, duty cycle  ou < 2%<br>6 = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. 

Publication Order Number: **NTUD3174NZ/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **September, 2012 − Rev. 0** 

**NTUD3174NZ** 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Junction−to−Ambient – Steady State (Note 3)|R�JA|1000|°C/W|
|Junction−to−Ambient – t = 5 s (Note 3)||600||



3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ|= 25°C unless o|therwise specified)|therwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS=  0 V, ID= 250�A||20|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 5 V|TJ= 25°C|||50|nA|
||||TJ= 85°C|||200|nA|
|||VGS= 0 V, VDS= 16 V|TJ= 25°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±5.0 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 100�A||0.52||1.0|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ|||||2.0|mV/°C|
|Drain−to−Source On Resistance|RDS(ON)|VGS= 4.5 V, ID=  100 mA|||0.75|1.5|�|
|||VGS= 2.5 V, ID= 50 mA|||1.0|2.0||
|||VGS= 1.8 V, ID= 20 mA|||1.4|3.0||
|||VGS= 1.5 V, ID= 10 mA|||1.8|4.5||
|||VGS= 1.2 V, ID= 1.0 mA|||2.8|||
|Forward Transconductance|gFS|VDS= 5.0 V, ID= 125 mA|||0.48||S|
|Source−Drain Diode Voltage|VSD|VGS= 0 V, IS= 10 mA|||0.6|1.0|V|
|**CAPACITANCES**||||||||
|Input Capacitance|CISS|f = 1.0 MHz, VGS= 0 V<br>VDS= 15 V|||12.5||pF|
|Output Capacitance|COSS||||3.6|||
|Reverse Transfer Capacitance|CRSS||||2.6|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 4)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDD= 10 V, ID= 200 mA,<br>RG= 2.0�|||16.5||ns|
|Rise Time|tr||||25.5|||
|Turn−Off Delay Time|td(OFF)||||142|||
|Fall Time|tf||||80|||



4. Switching characteristics are independent of operating junction temperatures. 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**†|
|NTUD3174NZT5G|SOT−963<br>(Pb−Free)|8000 / Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**NTUD3174NZ** 

## **TYPICAL CHARACTERISTICS** 

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0.4 0.4<br>VGS = 2 thru 5 V TJ = 25 ° C TJ = −55 ° C<br>VDS ≥  5 V<br>1.8 V TJ = 25 ° C TJ = 125 ° C<br>0.3 1.6 V 0.3<br>1.4 V<br>0.2 0.2<br>1.2 V<br>0.1 0.1<br>0 0<br>0 1 2 3 4 5 0 1 2 3<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>4 1.50<br>ID = 220 mA TJ = 25 ° C<br>TJ = 25 ° C 1.25<br>3 VGS = 2.5 V<br>1.00<br>2 0.75 VGS = 4.5 V<br>0.50<br>1<br>0.25<br>0 0<br>0 1 2 3 4 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.75 10,000<br>ID = 100 mA VGS = 0 V<br>1.50 VGS = 4.5 V<br>1.25 1000 TJ = 150 ° C<br>TJ = 125 ° C<br>1.00<br>100<br>0.75<br>0.50 10<br>−50 −25 0 25 50 75 100 125 150 0 4 8 12 16 20<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>ISTANCE ( ISTANCE (<br>, DRAIN−TO−SOURCE RES- , DRAIN−TO−SOURCE RES-<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RES- IDSS<br>ISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**3** 

**NTUD3174NZ** 

## **TYPICAL CHARACTERISTICS** 

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20.0 1000<br>VGS = 0 V VDD = 10 V<br>17.5 Ciss TJ = 25 ° C VIDGS = 200 mA = 4.5 V<br>15.0<br>td(off)<br>100<br>12.5 tf<br>10.0 Coss tr<br>td(on)<br>7.50<br>10<br>5.00<br>Crss<br>2.50<br>0 1<br>0 5 10 15 20 1 10 100<br>GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Resistive Switching Time Variation vs. Gate Resistance** 

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0.200<br>VGS = 0 V<br>0.175<br>TJ = 25 ° C<br>0.150<br>0.125<br>0.100<br>0.075<br>0.050<br>0.025<br>0<br>0 0.2 0.4 0.6 0.8 1<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 9. Diode Forward Voltage vs. Current** 

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**NTUD3174NZ** 

## **PACKAGE DIMENSIONS** 

**SOT−963** CASE 527AD ISSUE D 

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C<br>D A<br>A<br>B L<br>Lae LE<br>6 5 4<br>E HE<br>1 2 3<br>a<br>e C<br>6X b<br>0.08 C A B<br>**----- End of picture text -----**<br>


|NOTES:|NOTES:||||||
|---|---|---|---|---|---|---|
|1.|DIMENSIONING AND TOLERANCING PER ANSI||DIMENSIONING AND TOLERANCING PER ANSI||||
||Y14.5M, 1982.||||||
|2.|CONTROLLING DIMENSION: MILLIMETERS||||||
|3.|MAXIMUM LEAD THICKNESS INCLUDES LEAD|||MAXIMUM LEAD THICKNESS INCLUDES LEAD|||
||FINISH THICKNESS. MINIMUM LEAD THICKNESS||||||
||IS THE MINIMUM THICKNESS OF BASE MATERIAL.||||||
|||**MILLIMETERS**|||**INCHES**||
||**DIM**|**MIN**<br>**NOM**|**MAX**|**MIN**|**NOM**|**MAX**|
||**A**|0.34<br>0.37|0.40||||
||**b**|0.10<br>0.15|0.20|0.004|0.006|0.008|
||**C**|0.07<br>0.12|0.17|0.003|0.005|0.007|
||**D**|0.95<br>1.00|1.05|0.037|0.039|0.041|
||**E**|0.75<br>0.80|0.85|0.03|0.032|0.034|
||**e**|0.35 BSC||0.014 BSC|||
||**L**|0.05<br>0.10|0.15|0.002|0.004|0.006|
||**HE**|0.95<br>1.00|1.05|0.037|0.039|0.041|



## **SOLDERING FOOTPRINT*** 

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0.35 0.35<br>0.014 0.014<br>0.90<br>0.0354 0.20<br>0.008<br>L eg e<br>0.20<br>0.008 ” ~<br>SCALE 20:1 mm<br>(-) inches<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

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**NTUD3174NZ/D** 

**5**