NTTFS5826NLTAG

## NTTFS5826NL 

## MOSFET – Power, Single, N-Channel, 8FL 60 V, 24 m Q 

## **Features** 

- Small Footprint (3.3 x 3.3 mm) for Compact Designs 

- Low QG(TOT) to Minimize Switching Losses 

- Low Capacitance to Minimize Driver Losses 

- These are Pb−Free Devices 

## **Applications** 

- Motor Drivers 

- DC−DC Converters 

• Synchronous Rectification 

• Power Management **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS 60 V ~~es~~ ~~**e**~~ Gate−to−Source Voltage ~~ss~~ VGS 20 V Continuous Drain Tmb = 25 ° C ID 20 A Current R(Notes 1, 2, and 3)J−mb Tmb = 100 ° C 14 ~~—~~ Power Dissipation ~~ee~~ Tmb = 25 ° C ~~ee~~ PD 19 W and 3)R J−mb[ (Notes 1, 2,] Steady ~~—~~ Tmb = 100 ° C 10 Continuous Drain State TA = 25 ° C ID 8 A Current R& 3) JA (Notes 1 TA = 100 ° C 6 ~~ee ee~~ Power Dissipation ~~|~~ TA = 25 ° C PD ~~|~~ 3.1 W ~~ee~~ R JA (Notes 1 & 3) TA = 100 ° C 1.6 Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 133 A ~~es~~ Operating Junction and Storage Temperature ~~ee|~~ TJ, Tstg ~~a~~ −55 to ° C 175 ~~ee eee~~ Source Current (Body Diode) IS 20 A ~~es~~ Single Pulse Drain−to−Source Avalanche EAS 20 mJ Energy (TJ = 25 ° C, VDD = 50 V, VGS = 10 V, IL(pk) = 14.4 A, L = 1.0 mH, RG = 25 ) ~~ee~~ Lead Temperature for Soldering Purposes ~~ee~~ TL 260 ° C (1/8 ″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended ~~ee ee ee~~ Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

~~ee~~ **Parameter Symbol Value Unit** Junction−to−Mounting Board (top) − Steady R J−mb 7.9 ° C/W State (Notes 2, 3) ~~poee~~ Junction−to−Ambient − Steady State (Note 3) R JA 48 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

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V(BR)DSS RDS(on) MAX ID MAX<br>a ee<br>24 m  @ 10 V<br>60 V 20 A<br>32 m  @ 4.5 V<br>Poi<br>N−Channel<br>D<br>G<br>a h S<br>MARKING DIAGRAM<br>1<br>ys ,<br>1 S D<br>r |<br>WDFN8 S 5826 D<br>( 8FL) S AYWW D<br>CASE 511AB G D<br>— —<br>5826 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>; = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


**ORDERING INFORMATION Device Package Shipping**[†] NTTFS5826NLTAG WDFN8 1500/Tape & Reel (Pb−Free) NTTFS5826NLTWG WDFN8 5000/Tape & Reel (Pb−Free) ~~TF~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTTFS5826NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **June, 2019 − Rev. 2** 

**NTTFS5826NL** 

2. Psi ( � ) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 

3. Surface−mounted on FR4 board using a 650 mm[2] , 2 oz. Cu pad. 

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**2** 

## **NTTFS5826NL** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||58.6||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 4)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5||3.0|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||5.6||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 7.5 A||19|24|m�|
|||VGS= 4.5 V|ID= 7.5 A||25|32||
|Forward Transconductance|gFS|VDS = 15 V, ID = 5.0 A|||8||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||
|Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 25 V|||850||pF|
|Output Capacitance|Coss||||85|||
|Reverse Transfer Capacitance|Crss||||50|||
|Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 48 V,<br>ID = 5.0 A|||8.4||nC|
|Threshold Gate Charge|QG(TH)||||1.0|||
|Gate−to−Source Charge|QGS||||2.5|||
|Gate−to−Drain Charge|QGD||||3.9|||
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 48V, ID = 5.0A|||16|25|nC|
|Gate Resistance|RG|TA= 25°C|||1.5||�|
|**SWITCHING CHARACTERISTICS**(Note 5)||||||||
|Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS <br>ID= 5.0 A, RG=|= 48 V,<br>2.5�||9.0|18|ns|
|Rise Time|tr||||15|28||
|Turn−Off Delay Time|td(off)||||14|25||
|Fall Time|tf||||5.4|12||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDS=<br>ID= 5.0 A, RG=|48 V,<br>2.5�||7.0|12|ns|
|Rise Time|tr||||10|20||
|Turn−Off Delay Time|td(off)||||17|30||
|Fall Time|tf||||3.5|6.0||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 7.5 A|TJ= 25°C||0.8|2.3|V|
||||TJ= 125°C||0.7|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 5.0 A|||15||ns|
|Charge Time|ta||||12|||
|Discharge Time|tb||||4|||
|Reverse Recovery Charge|QRR||||13||nC|



4. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 

5. Switching characteristics are independent of operating junction temperatures. 

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**3** 

**NTTFS5826NL** 

## **TYPICAL CHARACTERISTICS** 

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40 40<br>V10 VGS = VGS = 4.5 V TJ = 25 ° C VDS ≥  10 V<br>V GS  = 3.8 V<br>30 30<br>VGS = 3.6 V<br>20 20<br>T J  = 25 ° C<br>VGS = 3.2 V<br>10 10<br>TJ = 125 ° C<br>V GS  = 2.8 V TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)ID ID<br>**----- End of picture text -----**<br>


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Figure 1. On−Region Characteristics<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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0.040<br>0.055 T IDJ = 7.5 A  = 25 ° C TJ = 25 ° C<br>0.045 0.030<br>VGS = 4.5 V<br>0.035<br>0.020 VGS = 10 V<br>0.025<br>0.015 0.010<br>2 4 6 8 10 5 10 15 20 25 30 35 40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.10 10000<br>1.90 ID = 7.5 A VGS = 0 V<br>VGS = 4.5 V<br>1.70<br>TJ = 150 ° C<br>1.50<br>1.30 1000<br>1.10 TJ = 125 ° C<br>0.90<br>0.70<br>0.50 100<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


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**4** 

**NTTFS5826NL** 

## **TYPICAL CHARACTERISTICS** 

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10<br>1000 V DS  = 0 V QT<br>TJ = 25 ° C<br>Ciss 8<br>800<br>6<br>600<br>400 4 Qgs Qgd<br>200 2 VDS = 48 V<br>C rss Coss TIDJ = 5 A = 25 ° C<br>0 0<br>0 10 20 30 40 50 60 0 4 8 12 16<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>(V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

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Figure 8. Gate−to−Source vs. Total Charge<br>**----- End of picture text -----**<br>


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100<br>40<br>VDD = 48 V VGS = 0 V<br>ID = 5 A TJ = 25 ° C<br>VGS = 4.5 V<br>30<br>tr<br>td(off)<br>10 20<br>td(on)<br>tf<br>10<br>1 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 20<br>VGS = 10 V ID = 20 A<br>Single Pulse<br>100 TC = 25 ° C 1 ms100  � s 15<br>10 ms 10  � s<br>10 dc 10<br>1 5<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.1 0<br>0.1 1 10 100 25 50 75 100 125 150 175<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy vs.<br>Safe Operating Area Starting Junction Temperature<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


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**5** 

**NTTFS5826NL** 

## **TYPICAL CHARACTERISTICS** 

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100<br>D = 0.5<br>10 D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>1<br>D = 0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 13. Thermal Response<br> (t)<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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1<br>**----- End of picture text -----**<br>


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WDFN8 3.3x3.3, 0.65P<br>CASE 511AB<br>ISSUE D<br>**----- End of picture text -----**<br>


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DATE 23 APR 2012<br>**----- End of picture text -----**<br>


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SCALE 2:1<br>2X<br>0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>o D S A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>me “Ap A1 —BSEEES D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>ly es<br>0.10 C an? A Mh 6Xe , SEATINGPLANEC See GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>s o rain K OUTLINE wir<br>E2<br>E3 M<br>FT hal NrBEES1<br>8 5<br>L1 3.60<br>G D2<br>Fi BOTTOM VIEW 0.75 P| 0.57 2.30<br>:<br>GENERIC<br>MARKING DIAGRAM* 0.47 a 2.37 a<br>1 3.46<br>XXXXX DIMENSION: MILLIMETERS<br>AYWW<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>XXXXX = Specific Device Code Mounting Techniques Reference Manual, SOLDERRM/D.<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. 

Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

**DOCUMENT NUMBER: 98AON30561E DESCRIPTION: WDFN8 3.3X3.3, 0.65P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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