NTTFS5820NLTAG

NTTFS5820NL 

## MOSFET – Power 

## 60 V, 37 A, 11.5 m 

**Features** 

- Low RDS(on) 

## **http://onsemi.com** 

- Low Capacitance 

- Optimized Gate Charge 

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V(BR)DSS RDS(on) MAX ID MAX<br>11.5 m  @ 10 V<br>60 V 37 A<br>15 m  @ 4.5 V<br>N−Channel MOSFET<br>D (5−8)<br>G (4)<br>S (1,2,3)<br>MARKING DIAGRAM<br>1<br>1 S D<br>WDFN8 S 5820 D<br>( 8FL) S AYWW D<br>CASE 511AB G | +f D<br>5820 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>=n = Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- These Devices are Pb−Free and are RoHS Compliant 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise stated)|C unless otherwise stated)|||
|---|---|---|---|---|---|
|**Parameter**|||**Symbol**|**Value**|**Unit**|
|Drain−to−Source Voltage<br>~~a~~|||VDSS<br>~~a~~<br>~~a~~|60<br>~~a~~|V<br>~~a~~|
|Gate−to−Source Voltage<br>~~ee~~|||VGS<br>~~ee~~<br>~~a~~|±20<br>~~ee~~|V<br>~~ee~~|
|Continuous Drain<br>Current R JA(Note 1)<br>~~ee~~<br>~~a~~|Steady<br>State<br>~~ee~~<br>~~a~~<br> <br>~~ee~~|TA= 25°C<br>~~ee~~<br>~~a~~|ID<br>~~ee~~<br>~~a~~<br>~~a~~|11<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br>~~a~~|
|||TA= 100°C<br>~~a~~||7<br>~~a~~||
|Power Dissipation R JA<br>(Note 1)<br>~~a~~<br>~~—)~~||TA= 25°C<br>~~a~~<br>~~SCEr~~|PD<br>~~a~~<br>~~SCEr~~|2.7<br>~~a~~<br>~~SCEr~~|W<br>~~a~~<br>~~SCEr~~|
|||TA= 100°C<br>~~a~~<br>~~SCEr~~||1.1<br>~~a~~<br>~~SCEr~~||
|Continuous Drain<br>Current R JC(Note 1)<br>~~—) ~~<br>~~ee~~||TC= 25°C<br>~~SCEr~~<br>~~ee~~|ID<br>~~SCEr~~<br>~~ee~~|37<br>~~SCEr~~<br>~~ee~~|A<br>~~SCEr~~<br>~~ee~~|
|||TC= 100°C<br> ~~SCEr~~<br>~~ee~~||24<br>~~SCEr~~<br>~~ee~~||
|Power Dissipation<br>R JC(Note 1)<br>~~ee~~||TC= 25°C<br>~~ee~~|PD<br>~~ee~~|33<br>~~ee~~|W<br>~~ee~~|
|||TC= 100°C<br>~~ee~~||13<br>~~ee~~||
|Pulsed Drain Current<br>~~a~~|tp= 10 s||IDM|149|A|
|Operating Junction and Storage Temperature<br>~~a~~<br>~~PE~~|||TJ,<br>Tstg<br>~~PE~~|−55 to<br>+150<br>~~PE~~|°C|
|Source Current (Body Diode)<br>~~EE~~|||IS<br>~~EE~~|37|A|
|Single Pulse Drain−to−Source Ava-<br>lanche Energy<br>~~LE~~||L = 0.1 mH<br>~~LE~~<br>~~EE~~|EAS<br>~~LE~~<br>~~EE~~|48<br>~~LE~~|mJ<br>~~LE~~|
||||IAS<br>~~LE~~<br>~~EE~~|31<br>~~LE~~|A<br>~~LE~~|
|Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>~~EE~~<br>~~Po~~|||TL<br>~~EE~~<br>~~Po~~|260<br>~~Po~~|°C<br>~~Po~~|



|Stresses exceeding Maximum Ratings may damage the device. Maximum|
|---|
|Ratings are stress ratings only. Functional operation above the Recommended<br>Operating Conditions is not implied. Extended exposure to stresses above the<br>Recommended Operating Conditions may affect device reliability.<br>**THERMAL RESISTANCE MAXIMUM RATINGS**<br>**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Junction−to−Case – Steady<br>State (Note 1)<br>R JC<br>3.8<br>°C/W<br>Junction−to−Ambient – Steady<br>State (Note 1)<br>R JA<br>46.7<br>~~a~~<br>~~a~~<br>~~PS~~|
|1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq|
|[2 oz] including traces.|



**ORDERING INFORMATION Device Package Shipping**[†] NTTFS5820NLTAG WDFN8 1500 / Tape & Reel (Pb−Free) NTTFS5820NLTWG WDFN8 5000 / Tape & Reel (Pb−Free) ~~Tt~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTTFS5820NL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **June, 2019 − Rev. 1** 

## **NTTFS5820NL** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||57||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 60 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5||2.3|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||6.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 8.7 A||10.1|11.5|m�|
|||VGS= 4.5 V|ID = 7.3 A||13.0|15||
|Forward Transconductance|gFS|VDS = 5 V, ID = 10 A|||24.6||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||
|Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 25 V|||1462||pF|
|Output Capacitance|Coss||||150|||
|Reverse Transfer Capacitance|Crss||||96|||
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 48|V, ID = 10 A||28||nC|
|||VGS = 4.5 V, VDS = 48|V, ID = 10 A||15|||
|Threshold Gate Charge|QG(TH)|VGS = 4.5 V, VDS = 48|V, ID = 10 A||1||nC|
|Gate−to−Source Charge|QGS||||4|||
|Gate−to−Drain Charge|QGD||||8|||
|Plateau Voltage|VGP||||3||V|
|Gate Resistance|RG||||0.62||�|
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS <br>ID= 10 A, RG=|= 48 V,<br>2.5�||10||ns|
|Rise Time|tr||||28|||
|Turn−Off Delay Time|td(off)||||19|||
|Fall Time|tf||||22|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.79|1.2|V|
||||TJ= 125°C||0.65|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 10 A|||19||ns|
|Charge Time|ta||||13|||
|Discharge Time|tb||||6|||
|Reverse Recovery Charge|QRR||||15||nC|



2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTTFS5820NL** 

## **TYPICAL CHARACTERISTICS** 

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80 80<br>70 10 V VGS = 5 V 4.0 V T J  = 25 ° C 70 VDS ≥  10 V<br>60 3.8 V 60<br>50 50<br>3.6 V<br>40 40<br>3.4 V<br>30 30<br>20 3.2 V 20 T J  = 25 ° C<br>10 3.0 V 10 TJ = 125 ° C TJ = −55 ° C<br>0 2.8 V 0<br>0 1 2 3 4 5 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.030 0.016<br>I D  = 10 A<br>0.025 TJ = 25 ° C TJ = 25 ° C<br>0.014 VGS = 4.5 V<br>0.020<br>0.012<br>0.015<br>VGS = 10 V<br>0.010<br>0.010<br>0.005 0.008<br>2 4 6 8 10 12 5 10 15 20 25 30 35 40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.1 100,000<br>1.9 ID = 10 A VGS = 0 V<br>VGS = 10 V<br>1.7<br>10,000<br>1.5 TJ = 150 ° C<br>1.3<br>1.1<br>1,000 TJ = 125 ° C<br>0.9<br>0.7<br>0.5 100<br>−50 −25 0 25 50 75 100 125 150 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>IDSS<br>, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTTFS5820NL** 

## **TYPICAL CHARACTERISTICS** 

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1800 10<br>1600 VGS = 0 V QT<br>TJ = 25 ° C<br>8<br>1400<br>Ciss<br>1200<br>6<br>1000<br>800<br>4<br>600 Qgd<br>Q gs<br>400 Coss 2 VDS = 48 V<br>200 ID = 10 A<br>0 Crss 0 TJ = 25 ° C<br>0 10 20 30 40 50 60 0 5 10 15 20 25 30<br>DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>1000 40<br>VDD = 48 V VGS = 0 V<br>VIDGS = 10 A = 4.5 V TJ = 25 ° C<br>30<br>100<br>td(off)<br>tf 20<br>tr<br>td(on)<br>10<br>10<br>1 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 50<br>VGS = 10 V<br>Single Pulse<br>100 TC = 25 ° C 40<br>100  � s 10  � s<br>30<br>1 ms<br>10<br>20<br>10 ms<br>1<br>RDS(on) Limit 10<br>dc<br>Thermal Limit<br>Package Limit<br>0.1 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAISN VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**4** 

**NTTFS5820NL** 

## **TYPICAL CHARACTERISTICS** 

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100<br>Duty Cycle = 0.5<br>0.2<br>10<br>0.1<br>0.05<br>1<br>0.02<br>0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W) EFFECTIVE TRANSIENT<br> ( ° THERMAL RESISTANCE<br>JA(t)<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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1<br>**----- End of picture text -----**<br>


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WDFN8 3.3x3.3, 0.65P<br>CASE 511AB<br>ISSUE D<br>**----- End of picture text -----**<br>


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DATE 23 APR 2012<br>**----- End of picture text -----**<br>


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SCALE 2:1<br>2X<br>0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>o D S A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>me “Ap A1 —BSEEES D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>ly es<br>0.10 C an? A Mh 6Xe , SEATINGPLANEC See GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>s o rain K OUTLINE wir<br>E2<br>E3 M<br>FT hal NrBEES1<br>8 5<br>L1 3.60<br>G D2<br>Fi BOTTOM VIEW 0.75 P| 0.57 2.30<br>:<br>GENERIC<br>MARKING DIAGRAM* 0.47 a 2.37 a<br>1 3.46<br>XXXXX DIMENSION: MILLIMETERS<br>AYWW<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>XXXXX = Specific Device Code Mounting Techniques Reference Manual, SOLDERRM/D.<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. 

Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

**DOCUMENT NUMBER: 98AON30561E DESCRIPTION: WDFN8 3.3X3.3, 0.65P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

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