NTTFS5116PLTAG

## NTTFS5116PL Power MOSFET **−60 V, −20 A, 52 m** ~ 

## **Features** 

- Low RDS(on) 

- Fast Switching 

- These Devices are Pb−Free and are RoHS Compliant 

## **http://onsemi.com** 

## **Applications** 

- Load Switches 

- DC Motor Control 

- DC−DC Conversion 

**V(BR)DSS RDS(on) MAX ID MAX** 52 m @ −10 V −60 V −20 A 72 m @ −4.5 V ~~eee~~ 

**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>−60<br>V<br>Gate−to−Source Voltage<br>VGS<br>±20<br>V<br>Continuous Drain<br>Current R JA(Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>−5.7<br>A<br>TA= 100°C<br>−4.0<br>Power Dissipation R JA<br>(Note 1)<br>TA= 25°C<br>PD<br>3.2<br>W<br>TA= 100°C<br>1.6<br>Continuous Drain<br>Current R JC(Note 1)<br>TC= 25°C<br>ID<br>−20<br>A<br>TC= 100°C<br>−14<br>Power Dissipation<br>R JC(Note 1)<br>TC= 25°C<br>PD<br>40<br>W<br>TC= 100°C<br>20<br>Pulsed Drain Current<br>tp= 10 s<br>IDM<br>−76<br>A<br>Operating Junction and Storage Temperature<br>TJ,<br>Tstg<br>−55 to<br>+175<br>°C<br>**P−Channel MOSFET**<br>D (5−8)<br>S (1,2,3)<br>G (4)<br>**WDFN8**<br>**( 8FL)**<br>**CASE 511AB**<br>**MARKING DIAGRAM**<br>1<br>1<br>5116<br>AYWW<br>D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>~~——~~<br>~~aa~~<br>~~=~~<br>~~SS] Te~~<br>~~ee rs~~<br>~~Ee~~<br>~~—~~<br>~~a~~<br>~~es~~<br>mn|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>−60<br>V<br>Gate−to−Source Voltage<br>VGS<br>±20<br>V<br>Continuous Drain<br>Current R JA(Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>−5.7<br>A<br>TA= 100°C<br>−4.0<br>Power Dissipation R JA<br>(Note 1)<br>TA= 25°C<br>PD<br>3.2<br>W<br>TA= 100°C<br>1.6<br>Continuous Drain<br>Current R JC(Note 1)<br>TC= 25°C<br>ID<br>−20<br>A<br>TC= 100°C<br>−14<br>Power Dissipation<br>R JC(Note 1)<br>TC= 25°C<br>PD<br>40<br>W<br>TC= 100°C<br>20<br>Pulsed Drain Current<br>tp= 10 s<br>IDM<br>−76<br>A<br>Operating Junction and Storage Temperature<br>TJ,<br>Tstg<br>−55 to<br>+175<br>°C<br>**P−Channel MOSFET**<br>D (5−8)<br>S (1,2,3)<br>G (4)<br>**WDFN8**<br>**( 8FL)**<br>**CASE 511AB**<br>**MARKING DIAGRAM**<br>1<br>1<br>5116<br>AYWW<br>D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>~~——~~<br>~~aa~~<br>~~=~~<br>~~SS] Te~~<br>~~ee rs~~<br>~~Ee~~<br>~~—~~<br>~~a~~<br>~~es~~<br>mn|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>−60<br>V<br>Gate−to−Source Voltage<br>VGS<br>±20<br>V<br>Continuous Drain<br>Current R JA(Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>−5.7<br>A<br>TA= 100°C<br>−4.0<br>Power Dissipation R JA<br>(Note 1)<br>TA= 25°C<br>PD<br>3.2<br>W<br>TA= 100°C<br>1.6<br>Continuous Drain<br>Current R JC(Note 1)<br>TC= 25°C<br>ID<br>−20<br>A<br>TC= 100°C<br>−14<br>Power Dissipation<br>R JC(Note 1)<br>TC= 25°C<br>PD<br>40<br>W<br>TC= 100°C<br>20<br>Pulsed Drain Current<br>tp= 10 s<br>IDM<br>−76<br>A<br>Operating Junction and Storage Temperature<br>TJ,<br>Tstg<br>−55 to<br>+175<br>°C<br>**P−Channel MOSFET**<br>D (5−8)<br>S (1,2,3)<br>G (4)<br>**WDFN8**<br>**( 8FL)**<br>**CASE 511AB**<br>**MARKING DIAGRAM**<br>1<br>1<br>5116<br>AYWW<br>D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>~~——~~<br>~~aa~~<br>~~=~~<br>~~SS] Te~~<br>~~ee rs~~<br>~~Ee~~<br>~~—~~<br>~~a~~<br>~~es~~<br>mn|**Parameter**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain−to−Source Voltage<br>VDSS<br>−60<br>V<br>Gate−to−Source Voltage<br>VGS<br>±20<br>V<br>Continuous Drain<br>Current R JA(Note 1)<br>Steady<br>State<br>TA= 25°C<br>ID<br>−5.7<br>A<br>TA= 100°C<br>−4.0<br>Power Dissipation R JA<br>(Note 1)<br>TA= 25°C<br>PD<br>3.2<br>W<br>TA= 100°C<br>1.6<br>Continuous Drain<br>Current R JC(Note 1)<br>TC= 25°C<br>ID<br>−20<br>A<br>TC= 100°C<br>−14<br>Power Dissipation<br>R JC(Note 1)<br>TC= 25°C<br>PD<br>40<br>W<br>TC= 100°C<br>20<br>Pulsed Drain Current<br>tp= 10 s<br>IDM<br>−76<br>A<br>Operating Junction and Storage Temperature<br>TJ,<br>Tstg<br>−55 to<br>+175<br>°C<br>**P−Channel MOSFET**<br>D (5−8)<br>S (1,2,3)<br>G (4)<br>**WDFN8**<br>**( 8FL)**<br>**CASE 511AB**<br>**MARKING DIAGRAM**<br>1<br>1<br>5116<br>AYWW<br>D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>~~——~~<br>~~aa~~<br>~~=~~<br>~~SS] Te~~<br>~~ee rs~~<br>~~Ee~~<br>~~—~~<br>~~a~~<br>~~es~~<br>mn|
|---|---|---|---|
|Source Current (Body Diode)<br>IS<br>−20<br>A|||5116<br>= Specific Device Code|
|Single Pulse Drain−to−Source Ava-<br>L = 0.1 mH<br>EAS<br>45<br>mJ|||A<br>= Assembly Location|
|lanche Energy<br>IAS<br>30<br>A<br>Lead Temperature for Soldering Purposes<br>(1/8” from case for 10 s)<br>TL<br>260<br>°C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum<br>~~ee ee eee~~||(Note: Microdot may be in either location)<br>Y<br>= Year<br>WW<br>= Work Week<br>= Pb−Free Package||



Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTTFS5116PLTAG|WDFN8<br>(Pb−Free)|1500/Tape & Reel|
|NTTFS5116PLTWG|WDFN8<br>(Pb−Free)|5000/Tape & Reel|



## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**Parameter**<br>~~es~~|**Symbol**<br>~~es~~|**Value**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|
|Junction−to−Case – Steady<br>State (Note 1)<br>~~a~~|R JC<br>~~ee~~|3.8<br>~~ee~~|°C/W<br>~~ee~~|
|Junction−to−Ambient – Steady<br>State (Note 1)<br>~~a~~|R JA<br>~~ee~~|47<br>~~ee~~||



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces. 

Publication Order Number: **NTTFS5116PL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 1** 

## **NTTFS5116PL** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−60|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||69.7||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −60 V|TJ= 25°C|||−1.0|�A|
||||TJ= 125°C|||−100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 2)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−1||−3|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||−6.2||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −10 V|ID= −6 A||37|52|m�|
|||VGS= −4.5 V|ID = −4.4 A||51|72||
|Forward Transconductance|gFS|VDS = −15 V, ID = −6 A|||11||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**||||||||
|Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = −30 V|||1258||pF|
|Output Capacitance|Coss||||127|||
|Reverse Transfer Capacitance|Crss||||84|||
|Total Gate Charge|QG(TOT)|VGS = −10 V, VDS = −48 V, ID = −5 A|||25||nC|
|||VGS = −4.5 V, VDS = −48 V, ID = −5 A|||14|||
|Threshold Gate Charge|QG(TH)|VGS = −4.5 V, VDS = −48 V, ID = −5 A|||1||nC|
|Gate−to−Source Charge|QGS||||4|||
|Gate−to−Drain Charge|QGD||||7|||
|Plateau Voltage|VGP||||3.1||V|
|Gate Resistance|RG||||5.3||�|
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS <br>ID= −5 A, RG=|= −48 V,<br>6�||15||ns|
|Rise Time|tr||||58|||
|Turn−Off Delay Time|td(off)||||30|||
|Fall Time|tf||||37|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −5 A|TJ= 25°C||−0.79|−1.2|V|
||||TJ= 125°C||−0.64|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= −100 A/�s,<br>IS= −5 A|||20||ns|
|Charge Time|ta||||15|||
|Discharge Time|tb||||5|||
|Reverse Recovery Charge|QRR||||19||nC|



2. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

3. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTTFS5116PL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 629] intentionally omitted <==**

**----- Start of picture text -----**<br>
40 40<br>VDS ≥  10 V<br>V GS  = 10 V VGS = 4.5 V<br>30 30<br>VGS = 4 V<br>20 20<br>10 VGS = 3.5 V 10 TJ = 25 ° C<br>V GS  = 3 V TJ = 125 ° C<br>TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.075 0.080<br>ID = −6 A TJ = 25 ° C<br>TJ = 25 ° C 0.070<br>0.065<br>0.060<br>VGS = 4.5 V<br>0.055<br>0.050<br>0.045<br>0.040 VGS = 10 V<br>0.035 0.030<br>2 4 6 8 10 5 10 15 20 25 30 35 40<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.0 10,000<br>ID = −4.4 A VGS = 0 V<br>1.8 VGS = 4.5 V<br>1.6<br>TJ = 150 ° C<br>1.4<br>1.2 1,000 TJ = 125 ° C<br>1.0<br>0.8<br>0.6 100<br>−50 −25 0 25 50 75 100 125 150 175 10 20 30 40 50 60<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE RES- IDSS<br>ISTANCE (NORMALIZED)<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**3** 

**NTTFS5116PL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [490 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
1800 10<br>1600 VTJGS = 25 = 0 V ° C Q T<br>8<br>1400<br>Ciss<br>1200<br>6<br>1000<br>800<br>4 Qgs Qgd<br>600<br>400 2 VDS = −48 V<br>2000 Crss Coss 0 T IDJ = −5 A  = 25 ° C<br>0 10 20 30 40 50 60 0 5 10 15 20 25<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>(V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

**Figure 8. Gate−to−Source and** 

**Drain−to−Source Voltage vs. Total Charge** 

**==> picture [491 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000 40<br>VDD = −48 V VGS = 0 V<br>ID = −5 A TJ = 25 ° C<br>VGS = −4.5 V 30<br>100<br>tf<br>tr 20<br>td(off)<br>10 td(on)<br>10<br>1 0<br>1 10 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

**==> picture [492 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
100 45<br>VGS = −10 V 1 ms 100  � s<br>Single Pulse 10 ms<br>TC = 25 ° C 10  � s<br>10 30<br>dc<br>1 15<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>0.1 0<br>0.1 1 10 100 25 50 75 100 125 150 175<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>, DRAIN CURRENT (A)<br>D<br>−I , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**4** 

**NTTFS5116PL** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [494 x 185] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>D = 0.5<br>10 D = 0.2<br>D = 0.1<br>D = 0.05<br>D = 0.02<br>1<br>D = 0.01<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>Figure 13. Thermal Response<br> (t)<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


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**5** 

**NTTFS5116PL** 

## **PACKAGE DIMENSIONS** 

## **WDFN8 3.3x3.3, 0.65P** 

**==> picture [54 x 18] intentionally omitted <==**

**----- Start of picture text -----**<br>
CASE 511AB<br>ISSUE C<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
2X<br>0.20  C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>oe D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20  C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>oe 4X === A1 0.00 0.05 0.000 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c A A1 FREESE D1D2 2.951.98 3.052.11 3.152.24 0.1160.078 0.1200.083 0.1240.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10  C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>0.10  C e SEATINGPLANE K 0.64 0.025<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0 ° 12 ° 0 ° 12 °<br>8X<br>SOLDERING FOOTPRINT*<br>0.05 C 8X<br>4X L e/2 0.42 0.65 4X<br>ET 14 . OS PITCH 0.66<br>PACKAGE<br>OUTLINE<br>K<br>E2<br>E3 M<br>8 5<br>L1 3.60<br>G D2<br>BOTTOM VIEW 0.75 0.57 2.30<br>~ i<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>*For additional information on our Pb ree strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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