NTTFS4C06NTAG

## NTTFS4C06N MOSFET – Power, Single, N-Channel, 8FL Ww ~~-~~ 30 V, 67 A 

## **Features** 

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- Low R to Minimize Conduction Losses DS(on) 

- Low Capacitance to Minimize Driver Losses 

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V(BR)DSS RDS(on) MAX ID MAX<br>4.2 m  @ 10 V<br>30 V 67 A<br>6.1 m  @ 4.5 V<br>Et<br>N−Channel MOSFET<br>D (5−8)<br>G (4)<br>= S (1,2,3)<br>MARKING DIAGRAM<br>1<br>ese<br>1 S1 D<br>WDFN8 S 4C06 D<br>( 8FL) S AYWW D<br>+<br>CASE 511AB G D<br>=<br>4C06AY = Specific Device Code= Year= Assembly Location<br>AY = Assembly Location<br>Y = Year= Assembly Location<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


- Optimized Gate Charge to Minimize Switching Losses 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- DC−DC Converters 

- Power Load Switch 

• **MAXIMUM RATINGS** (TJ = 25 **Parameter** Drain−to−Source Voltage ~~**a**~~ 

- Notebook Battery Management 

## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) 

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|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Drain−to−Source Voltage|VDSS|30|V|
|Gate−to−Source Voltage|VGS|±|20|V|S (1,2,3)|
|Continuous Drain|TA = 25|°|C|ID|18|A|
|Current R|JA (Note 1)|TA = 85|°|C|13|MARKING DIAGRAM|
|Tete|Power Dissipation R|JA|TA = 25|°|C|PD|2.16|W|ese|1|S1|D|
|(Note 1)|WDFN8|S|4C06|D|
|Continuous Drain|TA = 25|°|C|ID|25.6|A|(|8FL)|S|AYWW|D|
|||Current R(Note 1)|JA|≤|10 s|Fer|TA = 85|°|C|18.5|CASE 511AB|+|G|D|
|ee|=|
|(ere|Power DissipationRContinuous DrainJA|≤|10 s (Note 1)|SteadyState|TTAA = 25 = 25|°°|CC|PIDD|4.411|WA|4C06AY|= Specific Device Code= Year= Assembly Location|
|Current R|JA (Note 2)|TA = 85|°|C|8|WW|= Work Week|
|a|Power Dissipation|ee|TA = 25|°|C|PD|ee|0.81|W|= Pb−Free Package|
|R|JA (Note 2)|(Note: Microdot may be in either location)|
|(ere|
|Continuous Drain|TC = 25|°|C|ID|67|A|
|a|Current R|JC (Note 1)|ee|TC = 85|°|C|49|ORDERING INFORMATION|
|Power Dissipation|TC = 25|°|C|PD|31|W|
|R|JC (Note 1)|Device|Package|Shipping|[†]|
|Pe|
|Pulsed Drain Current|TA = 25|°|C, tp = 10 s|IDM|166|A|NTTFS4C06NTAG|WDFN8|1500 / Tape &|
|a|Operating Junction and Storage Temperature|ee|TJ,|−55 to|°|C|(Pb−Free)|Reel|
|Tstg|+150|NTTFS4C06NTWG|WDFN8|5000 / Tape &|
|a|Source Current (Body Diode)|IS|28|A|—|(Pb−Free)|Reel|
|a|Drain to Source dV/dt|dV/dt|7|V/ns|†For information on tape and reel specifications,|
|including part orientation and tape sizes, please|
|Single Pulse Drain−to−Source Avalanche Energy(TJ = 25|°|C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,|EAS|68|mJ|refer to our Tape and Reel Packaging SpecificationBrochure, BRD8011/D.|
|pe|L = 0.1 mH, RG = 25 ) (Note 3)|
|Lead Temperature for Soldering Purposes|TL|260|°|C|
|a|(1/8|″|from case for 10 s)|
|Stresses exceeding those listed in the Maximum Ratings table may damage the|
|device. If any of these limits are exceeded, device functionality should not be|
|assumed, damage may occur and reliability may be affected.|
|1.|Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.|

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Publication Order Number: **NTTFS4C06N/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **June, 2019 − Rev. 1** 

## **NTTFS4C06N** 

2. Surface−mounted on FR4 board using the minimum recommended pad size. 

3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25 ° C, VGS = 10 V, IL = 20 A, EAS = 20 mJ. 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Case (Drain)|R�JC|4.1|°C/W|
|Junction−to−Ambient – Steady State (Note 4)|R�JA|58||
|Junction−to−Ambient – Steady State (Note 5)|R�JA|154.3||
|Junction−to−Ambient – (t≤10 s) (Note 4)|R�JA|28.3||



4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 

5. Surface−mounted on FR4 board using the minimum recommended pad size. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V|
|Drain−to−Source Breakdown Voltage<br>(transient)|V(BR)DSSt|VGS= 0 V, ID(aval)= 12.6 A,<br>Tcase= 25°C, ttransient= 100 ns||34|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ||||14.4||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||10||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS|=±20 V|||±100|nA|
|**ON CHARACTERISTICS**(Note 6)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID=|250�A|1.3||2.2|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ||||3.8||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 30 A||3.4|4.2|m�|
|||VGS= 4.5 V|ID= 30 A||4.9|6.1||
|Forward Transconductance|gFS|VDS= 1.5 V, ID= 15 A|||58||S|
|Gate Resistance|RG|TA= 25°C|||1.0||�|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 15 V|||1683|3366|pF|
|Output Capacitance|COSS||||841|1682||
|Reverse Transfer Capacitance|CRSS||||40|||
|Capacitance Ratio|CRSS/CISS|VGS= 0 V, VDS= 15 V, f = 1 MHz|||0.023|||
|Total Gate Charge|QG(TOT)|VGS= 4.5 V, VDS= 15 V; ID= 30 A|||11.6|16.2|nC|
|Threshold Gate Charge|QG(TH)||||2.6|3.6||
|Gate−to−Source Charge|QGS||||4.7|6.6||
|Gate−to−Drain Charge|QGD||||4.0|5.6||
|Gate Plateau Voltage|VGP||||3.1||V|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 15 V; ID= 30 A|||26|36|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

7. Switching characteristics are independent of operating junction temperatures. 

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**2** 

## **NTTFS4C06N** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**SWITCHING CHARACTERISTICS**(Note 7)||||||||
|Turn−On Delay Time|td(ON)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||10||ns|
|Rise Time|tr||||32|||
|Turn−Off Delay Time|td(OFF)||||18|||
|Fall Time|tf||||5.0|||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||8.0||ns|
|Rise Time|tr||||28|||
|Turn−Off Delay Time|td(OFF)||||24|||
|Fall Time|tf||||3.0|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 10 A|TJ= 25°C||0.8|1.1|V|
||||TJ= 125°C||0.63|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt = 100 A/�s,<br>IS= 30 A|||34||ns|
|Charge Time|ta||||17|||
|Discharge Time|tb||||17|||
|Reverse Recovery Charge|QRR||||22||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 

7. Switching characteristics are independent of operating junction temperatures. 

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**3** 

**NTTFS4C06N** 

## **TYPICAL CHARACTERISTICS** 

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80<br>60 3.4 V TJ = 25 ° C VDS = 5 V<br>3.6 V 3.2 V 70<br>50 4.0 V to 10 V 60<br>3.0 V<br>40 50<br>40<br>30<br>2.8 V<br>30<br>20 TJ = 125 ° C<br>20<br>10 2.2 V 2.4 V2.6 V 10 TJ = 25 ° C TJ = −55 ° C<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.020 0.0060<br>0.018 ID = 30 A 0.0055 TJ = 25 ° C<br>0.016 0.0050 VGS = 4.5 V<br>0.0045<br>0.014<br>0.0040<br>0.012<br>0.0035 VGS = 10 V<br>0.010<br>0.0030<br>0.008<br>0.0025<br>0.006<br>0.0020<br>0.004 0.0015<br>0.002 0.0010<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 10 20 30 40 50 60 70<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.7 10000<br>1.6 ID = 30 A VGS = 0 V<br>VGS = 10 V TJ = 150 ° C<br>1.5<br>1.4<br>1000<br>1.3 TJ = 125 ° C<br>1.2<br>1.1<br>100<br>1 TJ = 85 ° C<br>0.9<br>0.8<br>0.7 10<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**4** 

**NTTFS4C06N** 

## **TYPICAL CHARACTERISTICS** 

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2000 10<br>VGS = 0 V<br>1800 Ciss TJ = 25 ° C QT<br>1600 8<br>1400<br>1200 6<br>1000 Coss<br>800 4<br>Qg d<br>600 Qgs TJ = 25 ° C<br>400 2 VDD = 15 V<br>200 VGS = 10 V<br>Crss ID = 30 A<br>0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

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1000<br>VDD = 15 V<br>ID = 15 A<br>VGS = 10 V td(off)<br>100<br>tr<br>10 td(on)<br>tf<br>1.0<br>1 10 100<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


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RG, GATE RESISTANCE ( � )<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** 

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20<br>18 VGS = 0 V<br>16<br>14<br>12<br>10<br>8<br>6<br>4 TJ = 125 ° C<br>TJ = 25 ° C<br>2<br>0<br>0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 10. Diode Forward Voltage vs. Current** 

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1000 20<br>ID = 20 A<br>100 16<br>10  � s<br>10 100  � s 12<br>1 ms<br>10 ms<br>1 0 V < VGS < 10 V 8<br>Single Pulse<br>TC = 25 ° C<br>0.1 RDS(on) Limit dc 4<br>Thermal Limit<br>Package Limit<br>0.01 0<br>0.01 0.1 1 10 100 25 50 75 100 125 15<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br>


**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

**Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** 

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**5** 

**NTTFS4C06N** 

## **TYPICAL CHARACTERISTICS** 

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100<br>Duty Cycle = 50%<br>20%<br>10<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br>


**Figure 13. Thermal Response** 

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130 100<br>120<br>110<br>100 TA = 25 ° C<br>90<br>7080 TA = 85 ° C<br>10<br>60<br>50<br>40<br>30<br>20<br>10<br>0 1<br>0 5 10 15 20 25 30 35 40 45 50 55 60 1.0E−08 1.0E−07 1.0E−06 1.0E−05 1.0E−04 1.E−03<br>ID (A) PULSE WIDTH (SECONDS)<br> (S)<br>FS<br>G<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 14. GFS vs. ID** 

**Figure 15. Avalanche Characteristics** 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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1<br>**----- End of picture text -----**<br>


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WDFN8 3.3x3.3, 0.65P<br>CASE 511AB<br>ISSUE D<br>**----- End of picture text -----**<br>


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DATE 23 APR 2012<br>**----- End of picture text -----**<br>


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SCALE 2:1<br>2X<br>0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>o D S A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>me “Ap A1 —BSEEES D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>ly es<br>0.10 C an? A Mh 6Xe , SEATINGPLANEC See GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>s o rain K OUTLINE wir<br>E2<br>E3 M<br>FT hal NrBEES1<br>8 5<br>L1 3.60<br>G D2<br>Fi BOTTOM VIEW 0.75 P| 0.57 2.30<br>:<br>GENERIC<br>MARKING DIAGRAM* 0.47 a 2.37 a<br>1 3.46<br>XXXXX DIMENSION: MILLIMETERS<br>AYWW<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>XXXXX = Specific Device Code Mounting Techniques Reference Manual, SOLDERRM/D.<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. 

Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 

**DOCUMENT NUMBER: 98AON30561E DESCRIPTION: WDFN8 3.3X3.3, 0.65P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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