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NTTFS4932NTAG.
Power MOSFET, N Channel, 30 V, 18 A, 4000 µohm, WDFN, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0025ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Pow
- MSL: MSL 1 - Unlimited
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 2.2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: WDFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 18A
- Drain Source On State Resistance: 4000µohm
- Gate Source Threshold Voltage Max: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.343 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
NTTFS4932N ## Power MOSFET ## **30 V, 79 A, Single N−Channel, 8FL** ## **Features** - Low R to Minimize Conduction Losses DS(on) - Low Capacitance to Minimize Driver Losses **http://onsemi.com** - Optimized Gate Charge to Minimize Switching Losses - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **V(BR)DSS RDS(on) MAX ID MAX** 4.0 m @ 10 V 30 V 79 A 5.5 m @ 4.5 V ~~ESee ee~~ **N−Channel MOSFET** ## **Applications** - Low−Side DC−DC Converters - Power Load Switch - Notebook Battery Management • Motor Control |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~———~~|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~———~~|**MAXIMUM RATINGS**(TJ= 25°C unless otherwise stated)<br>~~———~~|C unless otherwise stated)||| |---|---|---|---|---|---| |**Parameter**<br>~~ee~~<br>~~———~~|||**Symbol**<br>~~ee~~|**Value**<br>~~ee~~|**Unit**<br>~~ee~~| |Drain−to−Source Voltage<br>~~———~~|||VDSS|30|V| |Gate−to−Source Voltage<br>~~———~~|||VGS|±20|V| |Continuous Drain<br>Current R JA(Note 1)<br>~~———~~<br>~~ae~~|Steady<br>State<br>~~———~~<br>~~ae~~<br> <br> <br>~~||~~|TA= 25°C<br>~~———~~<br>~~ae~~|ID<br>~~ae~~|18<br>~~ae~~|A<br>~~ae~~| |||TA= 85°C<br>~~———~~<br>~~ae~~||13<br>~~ae~~|| |Power Dissipation R JA<br>(Note 1)||TA= 25°C|PD|2.2|W| |Continuous Drain<br>Current R JA ≤10 s<br>(Note 1)||TA= 25°C|ID|25.5|A| |||TA= 85°C||18.5|| |Power Dissipation<br>R JA ≤10 s (Note 1)||TA= 25°C|PD|4.5|W| |Continuous Drain<br>Current R JA(Note 2)<br>~~PS~~<br>~~fh~~||TA= 25°C<br>~~ESE~~|ID<br>~~ESE~~<br>~~ee ee~~<br>|11<br>~~ESE~~|A<br>~~ESE~~<br>~~ee~~<br>| |||TA= 85°C<br>~~ESE~~<br>||8.0<br>~~ESE~~<br>~~ee~~<br>|| |Power Dissipation<br>R JA(Note 2)<br>~~ee ~~<br>~~fh~~||TA= 25°C<br> ~~ee~~<br>|PD<br>~~ee~~<br>~~ee ee~~<br>|0.85<br>~~ee~~<br>~~ee~~<br>|W<br>~~ee~~<br>~~ee~~<br>| |Continuous Drain<br>Current R JC(Note 1)<br>~~fh ~~<br>~~|~~||TC= 25°C<br>~~ESE~~|ID<br>~~ee ee~~<br>~~ESE~~<br>~~|~~|79<br>~~ee~~<br>~~ESE~~|A<br>~~ee~~<br>~~ESE~~<br>~~ff~~| |||TC= 85°C<br> ~~ESE~~<br>~~|~~<br>~~|~~||57<br>~~ee~~<br>~~ESE~~<br>~~ff~~|| |Power Dissipation<br>R JC(Note 1)<br>~~oo|~~||TC= 25°C<br>~~|~~<br>~~|~~<br>~~Oe~~|PD<br>~~|~~|43<br>~~ff~~|W<br>~~ff~~| |Pulsed Drain Current<br>~~|~~<br>~~es~~<br>~~———~~|TA= 25°C, tp= 10 s<br>~~| |~~<br>~~|~~<br>~~es~~<br>~~Oe~~<br>~~———~~||IDM<br>~~| ~~<br>~~es~~<br>~~ee~~|235<br> ~~ff~~<br>~~es~~<br>~~ee~~|A<br>~~ff~~<br>~~es~~<br>~~ee~~| |Operating Junction and Storage Temperature<br>~~Oe~~<br>~~ee~~<br>~~———~~|||TJ,<br>Tstg<br>~~ee~~<br>~~ee~~|−55 to<br>+150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| |Source Current (Body Diode)<br>~~———~~|||IS<br>~~ee~~|39<br>~~ee~~|A<br>~~ee~~| |Drain to Source dV/dt<br>~~———~~|||dV/dt<br>~~ee~~|6.0<br>~~ee~~|V/ns<br>~~ee~~| |Single Pulse Drain−to−Source Avalanche Energy<br>(TJ= 25°C, VDD= 50 V, VGS= 10 V,<br>IL= 43 Apk, L = 0.1 mH, RG= 25 )<br>~~———~~<br>~~re~~|||EAS<br>~~ee ~~<br>~~re~~|92.4<br> ~~ee~~<br>~~re~~<br>~~ee~~|mJ<br>~~ee~~<br>~~re~~<br>~~ee~~| |Lead Temperature for Soldering Purposes<br>(1/8″from case for 10 s)<br>~~ee~~|||TL<br>~~ee~~|260<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| **==> picture [190 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> D (5−8)<br>G (4)<br>= } S (1,2,3)<br>MARKING DIAGRAM<br>1<br>1 S D<br>WDFN8 S 4932 D<br>( 8FL) S AYWW D<br>CASE 511AB G D<br>4932 = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>ORDERING INFORMATION<br>Device Package Shipping [†]<br>NTTFS4932NTAG WDFN8 1500/Tape & Reel<br>(Pb−Free)<br>NTTFS4932NTWG WDFN8 5000/Tape & Reel<br>(Pb−Free)<br>—T<br>†For information on tape and reel specifications,<br>including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.<br>**----- End of picture text -----**<br> 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTTFS4932N/D** **1** © Semiconductor Components Industries, LLC, 2011 **November, 2011 − Rev. 2** **NTTFS4932N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|2.9|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|56.5|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|147.6|| |Junction−to−Ambient –(t≤10 s) (Note 3)|R�JA|27.5|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm[2] , 1 oz. Cu). ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||14||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.2|1.6|2.2|V| |Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||4.5||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 20 A||2.5|4.0|m�| ||||ID = 10 A||2.5||| |||VGS= 4.5 V|ID= 20 A||3.6|5.5|| ||||ID = 10 A||3.6||| |Forward Transconductance|gFS|VDS = 1.5 V, ID =|15 A||46||S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 15 V|||3111||pF| |Output Capacitance|Coss||||1064||| |Reverse Transfer Capacitance|Crss||||42||| |Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 15 V, ID = 20 A|||20||nC| |Threshold Gate Charge|QG(TH)||||4.9||| |Gate−to−Source Charge|QGS||||8.9||| |Gate−to−Drain Charge|QGD||||3.3||| |Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 15 V, ID = 20 A|||46.5||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||15.5||ns| |Rise Time|tr||||22.6||| |Turn−Off Delay Time|td(off)||||29||| |Fall Time|tf||||4.8||| 5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTTFS4932N** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(on)|VGS= 10 V, VDS=<br>ID= 15 A, RG=|15 V,<br>3.0�||11||ns| |Rise Time|tr||||21.5||| |Turn−Off Delay Time|td(off)||||35.6||| |Fall Time|tf||||3.5||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 20 A|TJ= 25°C||0.8|1.1|V| ||||TJ= 125°C||0.7||| |Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= 20 A|||40||ns| |Charge Time|ta||||21||| |Discharge Time|tb||||19||| |Reverse Recovery Charge|QRR||||37.5||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||0.38||nH| |Drain Inductance|LD||||0.054||| |Gate Inductance|LG||||1.3||| |Gate Resistance|RG||||1.1|2.0|�| 5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTTFS4932N** ## **TYPICAL CHARACTERISTICS** **==> picture [494 x 593] intentionally omitted <==** **----- Start of picture text -----**<br> 160 120<br>10 V VGS = 4.2 V to 7 V TJ = 25 ° C VDS ≥ 10 V<br>140 4.0 V<br>3.8 V 100<br>120 3.6 V<br>80<br>100 3.4 V<br>3.2 V<br>80 60<br>60 3.0 V TJ = 25 ° C<br>40<br>40 2.8 V<br>20 2.6 V 20 TJ = 125 ° C<br>2.4 V TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.007 0.006<br>I D = 20 A TJ = 25 ° C<br>TJ = 25 ° C 0.0055<br>0.006<br>0.005<br>0.0045<br>0.005 VGS = 4.5 V<br>0.004<br>0.004<br>0.0035<br>0.003 VGS = 10 V<br>0.003<br>0.0025<br>0.002 0.002<br>2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>VGS (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.8 10,000<br>1.7 ID = 20 A VGS = 0 V<br>1.6 VGS = 10 V TJ = 150 ° C<br>1.5<br>1.4<br>1000<br>1.3 TJ = 125 ° C<br>1.2<br>1.1<br>1.0<br>0.9 100<br>0.8 TJ = 85 ° C<br>0.7<br>0.6<br>0.5 10<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>)<br>� )<br>, DRAIN−TO−SOURCE RESISTANCE ( �<br>, DRAIN−TO−SOURCE RESISTANCE (<br>DS(on)<br>R DS(on)<br>R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **4** **NTTFS4932N** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 595] intentionally omitted <==** **----- Start of picture text -----**<br> 3800 10<br>3600<br>3400 9 QT<br>3200 C iss<br>3000 8<br>2800<br>7<br>2600<br>24002200 VT J GS = 25 = 0 V ° C 6<br>2000 5<br>1800<br>14001600 C oss 4 Qgs Qgd<br>10001200 3 T J = 25 ° C<br>800 2 VDD = 15 V<br>600400 1 VGS = 10 V<br>200 Crss ID = 20 A<br>0 0<br>0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32 36 40 44 48<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 30<br>VDD = 15 V VGS = 0 V<br>ID = 15 A td(off) 25<br>VGS = 10 V<br>100 tf 20<br>TJ = 125 ° C<br>tr 15<br>td(on)<br>10 10<br>5<br>TJ = 25 ° C<br>1 0<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 100<br>90 ID = 43 A<br>100 80<br>10 � s 70<br>10 100 � s 60<br>1 ms<br>50<br>10 ms<br>1 VGS = 20 V 40<br>Single Pulse<br>TC = 25 ° C 30<br>0.1 RDS(on) Limit dc 20<br>Thermal Limit<br>10<br>Package Limit<br>0.01 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE ( ° C)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br> **Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTTFS4932N** ## **TYPICAL CHARACTERISTICS** **==> picture [491 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Duty Cycle = 50%<br>20%<br>10<br>10%<br>5%<br>1 2%<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>R(t) (<br>**----- End of picture text -----**<br> **Figure 13. Thermal Response** **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40 50 60 70 80<br>ID (A)<br>GFS (S)<br>**----- End of picture text -----**<br> **Figure 14. GFS vs. ID** **http://onsemi.com** **6** **NTTFS4932N** ## **PACKAGE DIMENSIONS** **==> picture [94 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> WDFN8 3.3x3.3, 0.65P<br>CASE 511AB<br>ISSUE C<br>**----- End of picture text -----**<br> **==> picture [488 x 394] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>oe D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>D1 B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>oe 4X === A1 0.00 0.05 0.000 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c A A1 FREESE D1D2 2.951.98 3.052.11 3.152.24 0.1160.078 0.1200.083 0.1240.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>0.10 C e SEATINGPLANE K 0.64 0.025<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0 ° 12 ° 0 ° 12 °<br>8X<br>SOLDERING FOOTPRINT*<br>0.05 C 8X<br>4X L e/2 0.42 0.65 4X<br>ET 14 . OS PITCH 0.66<br>PACKAGE<br>OUTLINE<br>K<br>E2<br>E3 M<br>8 5<br>L1 3.60<br>G D2<br>BOTTOM VIEW 0.75 0.57 2.30<br>~ i<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>*For additional information on our Pb ree strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com NTTFS4932N/D 7** ## **LITERATURE FULFILLMENT** :
Updated at March 10, 2026
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