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NTTFS4824NTAG
Power MOSFET, N Channel, 30 V, 69 A, 0.0037 ohm, WDFN, Surface Mount
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- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Power Dissipation: 46.3W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 46.3W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0037ohm
- Transistor Case Style: WDFN
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 69A
- Drain Source On State Resistance: 0.0037ohm
- Gate Source Threshold Voltage Max: 1.9V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.442 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## NTTFS4824N ## Power MOSFET ## **30 V, 69 A, Single N−Channel, 8FL** ## **Features** - Small Footprint (3.3 x 3.3 mm) for Compact Design - Low R to Minimize Conduction Losses DS(on) **==> picture [479 x 521] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||||||||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |http://onsemi.com| |•|Low Capacitance to Minimize Driver Losses| |•|These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS|V(BR)DSS|RDS(on) MAX|ID MAX| |Compliant| |5.0 m|@ 10 V| |Applications|30 V|69 A| |7.5 m|@ 4.5 V| |•|DC−DC Converters|ie| |•|Low Side Switching| |N−Channel MOSFET| |MAXIMUM RATINGS|(TJ = 25|°|C unless otherwise stated)|D (5−8)| |ee|Parameter|Symbol|es|Value|es|Unit| |es|Drain−to−Source Voltage|VDSS|30|V| |es|Gate−to−Source Voltage|VGS|±|20|V| |Continuous Drain|TA = 25|°|C|ID|14.9|A|G (4)| |ee|Current R|JA (Note 1)|TA = 85|°|C|es|ee|10.8| |Power Dissipation R|JA|TA = 25|°|C|PD|2.2|W|S (1,2,3)| |(Note 1)| |P||Continuous DrainCurrent R(Note 1)|JA|≤|10 s|ee|||TTAA = 25 = 85|ee|°°|CC|ID|||20.614.9|1|A|~|WDFN8|1|MARKING DIAGRAM|3|S1|D| |S|4824|D| |Power Dissipation|TA = 25|°|C|PD|4.1|W|(|8FL)|S|AYWW|D| |R|JA|≤|10 s (Note 1)|Steady|CASE 511AB|G|D| |ee|Continuous Drain|State|ee|TC|eee|= 25|°|C|ee|ID|8.3|A|FLAT LEAD|i| |Current R|JA (Note 2)|TC = 85|°|C|6.0|4824|= Specific Device Code| |a|Power Dissipation|ee|TC = 25|ee|°|C|PD|0.66|ee|W|A|= Assembly Location| |R|JA (Note 2)|Y|= Year| |ee|Continuous DrainCurrent R|JC (Note 1)|ee|TTCC = 25 = 85|ee|°°|CC|ee|ID|6950|A|WW|= Work Week= Pb−Free Package| |a|Power Dissipation|ee|TC = 25|ee|°|C|ee|PD|46.3|W|(Note: Microdot may be in either location)|:| |R|JC (Note 1)| |eees|Pulsed Drain CurrentOperating Junction and Storage TemperatureTA|ee|= 25|°|ed|C, tp = 10 s|eeee|ITDMJ,|−55 to207|°|AC|ORDERING INFORMATION| |Tstg|+150|Device|Package|Shipping|[[†]]| |es|Source Current (Body Diode)|IS|46.3|A|NTTFS4824NTAG|WDFN8|1500/Tape & Reel| |esPe|Drain to Source dV/dt|dV/dt|es|6.0|ee|V/ns|++|(Pb−Free)| |Single Pulse Drain−to−Source Avalanche Energy(TJ = 25|°|C, VDD = 50 V, VGS = 10 V,|EAS|72|mJ|†For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please| |eT|IL = 38 Apk, L = 0.1 mH, RG = 25 )|refer to our Tape and Reel Packaging Specification| |Lead Temperature for Soldering Purposes|TL|260|°|C|Brochure, BRD8011/D.| |ee|(1/8|″|from case for 10 s)|Ge| |Stresses exceeding Maximum Ratings may damage the device. Maximum| |Ratings are stress ratings only. Functional operation above the Recommended| |Operating Conditions is not implied. Extended exposure to stresses above the| |Recommended Operating Conditions may affect device reliability.| **----- End of picture text -----**<br> **ORDERING INFORMATION Device Package Shipping**[[†]] NTTFS4824NTAG WDFN8 1500/Tape & Reel (Pb−Free) ~~++~~ †For information on tape and reel specifications,including part orientation and tape sizes, pleaseincluding part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. Publication Order Number: **NTTFS4824N/D** **1** © Semiconductor Components Industries, LLC, 2013 **September, 2013 − Rev. 5** **NTTFS4824N** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**THERMAL RESISTANCE MAXIMUM RATINGS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Junction−to−Case (Drain)|R�JC|2.7|°C/W| |Junction−to−Ambient – Steady State (Note 3)|R�JA|57.7|| |Junction−to−Ambient – Steady State (Note 4)|R�JA|187.8|| |Junction−to−Ambient –(t≤10 s) (Note 3)|R�JA|30.3|| 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||30|||V| |Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||25||mV/°C| |Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 24 V|TJ= 25°C|||1.0|�A| ||||TJ= 125°C|||10|| |Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=|±20 V|||±100|nA| |**ON CHARACTERISTICS**(Note 5)|||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 250�A||1.5|1.9|2.5|V| |Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||6||mV/°C| |Drain−to−Source On Resistance|RDS(on)|VGS= 10 V to 11.5 V|ID= 20 A||3.7|5.0|m�| ||||ID = 10 A||3.6||| |||VGS= 4.5 V|ID= 20 A||5.8|7.5|| ||||ID = 10 A||5.7||| |Forward Transconductance|gFS|VDS = 1.5 V, ID =|20 A||53||S| |**CHARGES AND CAPACITANCES**|||||||| |Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = 12 V|||1750|2363|pF| |Output Capacitance|Coss||||350|473|| |Reverse Transfer Capacitance|Crss||||170|255|| |Total Gate Charge|QG(TOT)|VGS = 4.5 V, VDS = 15 V, ID = 20 A|||12.6|18|nC| |Threshold Gate Charge|QG(TH)||||1.7||| |Gate−to−Source Charge|QGS||||4.7||| |Gate−to−Drain Charge|QGD||||4.8||| |Total Gate Charge|QG(TOT)|VGS = 11.5 V, VDS = 15 V, ID = 20 A|||29||nC| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(on)|VGS= 4.5 V, VDS= 15 V,<br>ID= 15 A, RG= 3.0�|||13||ns| |Rise Time|tr||||38||| |Turn−Off Delay Time|td(off)||||18||| |Fall Time|tf||||5.5||| 5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **2** ## **NTTFS4824N** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25°C|unless otherwise specified)|unless otherwise specified)||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS**(Note 6)|||||||| |Turn−On Delay Time|td(on)|VGS= 11.5 V, VDS <br>ID= 15 A, RG=|= 15 V,<br>3.0�||9.0||ns| |Rise Time|tr||||21||| |Turn−Off Delay Time|td(off)||||25||| |Fall Time|tf||||4.4||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 20 A|TJ= 25°C||0.8|1.0|V| ||||TJ= 125°C||0.7||| |Reverse Recovery Time|tRR|VGS= 0 V,<br>dIS/dt= 100 A/�s,<br>IS= 20 A|||22||ns| |Charge Time|ta||||10.5||| |Discharge Time|tb||||11.5||| |Reverse Recovery Charge|QRR||||10||nC| |**PACKAGE PARASITIC VALUES**|||||||| |Source Inductance|LS|TA= 25°C|||0.38||nH| |Drain Inductance|LD||||0.054||| |Gate Inductance|LG||||1.3||| |Gate Resistance|RG||||0.9|2.0|�| 5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 6. Switching characteristics are independent of operating junction temperatures. **http://onsemi.com** **3** **NTTFS4824N** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> 130 125<br>120 10 V 7.0 V TJ = 25 ° C VDS ≥ 10 V<br>110 5.0 V VGS = 4.5 V<br>100<br>100<br>90 4.2 V<br>80 4.0 V 75<br>70<br>60 3.8 V<br>50 50<br>40 3.6 V TJ = 100 ° C<br>30 3.4 V<br>25<br>20 3.2 V TJ = 25 ° C<br>100 0 TJ = −55 ° C<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.010 0.010<br>ID = 20 A TJ = 25 ° C<br>0.009 T J = 25 ° C 0.009<br>0.008 0.008<br>0.007 0.007<br>0.006 0.006 VGS = 4.5 V<br>0.005 0.005<br>0.004 0.004<br>0.003 0.003 VGS = 10 V<br>0.002 0.002<br>3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 110 120<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 10000<br>1.7 ID = 20 A VGS = 0 V<br>1.6 VGS = 10 V<br>1.5<br>1.4 TJ = 150 ° C<br>1000<br>1.3<br>1.2<br>1.1 TJ = 125 ° C<br>1<br>100<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5 10<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>IDSS<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **Figure 6. Drain−to−Source Leakage Current vs. Voltage** **http://onsemi.com** **4** **NTTFS4824N** ## **TYPICAL CHARACTERISTICS** **==> picture [493 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 3000 12<br>VGS = 0 V QT<br>TJ = 25 ° C 10<br>2000 Ciss 8<br>6<br>VGS<br>1000 4 Qgs Qgd<br>Coss<br>2<br>ID = 20 A<br>0 Crss 0 TJ = 25 ° C<br>0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32<br>GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Variation** **Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [492 x 385] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 30<br>VDD = 15 V VGS = 0 V<br>ID = 15 A 25 TJ = 25 ° C<br>VGS = 10 V td(off)<br>100 tf 20<br>tr<br>15<br>td(on)<br>10 10<br>5<br>1 0<br>1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000 75<br>ID = 38 A<br>100<br>10 � s<br>50<br>10 100 � s<br>1 ms<br>1 VGS = 20 V 10 ms<br>Single Pulse 25<br>TC = 25 ° C<br>0.1 RDS(on) Limit dc<br>Thermal Limit<br>Package Limit<br>0.01 0<br>0.1 1 10 100 25 50 75 100 125 150<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE( ° C)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , SINGLE PULSE DRAIN−TO−<br>AS<br>E<br>SOURCE AVALANCHE ENERGY (mJ)<br>**----- End of picture text -----**<br> **Figure 11. Maximum Rated Forward Biased Safe Operating Area** **Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature** **http://onsemi.com** **5** **NTTFS4824N** ## **PACKAGE DIMENSIONS** **WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D **==> picture [486 x 361] intentionally omitted <==** **----- Start of picture text -----**<br> 2X<br>e 0.20 l C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>LI D1 au n B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>4X A1 0.00 −−− 0.05 0.000 −−− 0.002<br>coe E1 E yp b 0.23 0.30 0.40 pe 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>we A1 ======= D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>~ 4 06C U « d ———_— E3 0.23 0.30 0.40 0.009 0.012 0.016<br>A 6X C Ge 0.30 0.65 BSC0.41 0.51 0.012 0.026 BSC0.016 0.020<br>0.10 C e SEATINGPLANE K 0.65 0.80 0.95 0.026 0.032 0.037<br>L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>M 1.40 1.50 1.60 0.055 0.059 0.063<br>0 −−− 12 0 −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>HH T 1 L 4 PACKAGE a PITCH 0.66<br>K OUTLINE<br>E2<br>E3 M<br>ia<br>8 5 L1 3.60<br>G D2<br>BOTTOM VIEW 0.75 0.57 2.30<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **NTTFS4824N/D** **6**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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