NTTFS3A08PZTAG

## NTTFS3A08PZ 

## Power MOSFET 

## **−20 V, −15 A, Single P−Channel, 8FL** 

## **Features** 

- Ultra Low RDS(on) to Minimize Conduction Losses 

- 8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal 

- Conduction 

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- ESD Protection Level of 5 kV per JESD22−A114 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS **V(BR)DSS RDS(on) MAX ID MAX** Compliant 6.7 m @ −4.5 V −20 V −15 A **Applications** 9.0 m @ −2.5 V • ~~=a~~ Battery Switch • High Side Load Switch **P−Channel MOSFET** • Optimized for Power Management Applications for Portable S Products such as Media Tablets, Ultrabook PCs and Cellphones **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise stated) **Parameter Symbol Value Unit** G Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ± 8 V ~~eS~~ L ~~e~~ D Continuous Drain TA = 25 ° C ID −15 A ~~es ps~~ Current R JA (Note 1) TA = 85 ° C ~~ee~~ −11 **MARKING DIAGRAM** Power Dissipation R JA ~~|~~ T ~~ei~~ A = 25 ° C PD ~~rl~~ 2.3 W ~~s)~~ 1 . (Note 1) 1 S D **WDFN8** S 3A08 D Continuous Drain TA = 25 ° C ID −22 A **( 8FL)** S AYWW D Current R(Note 1) JA ≤ 10 s Steady TA = 85 ° C −16 **CASE 511AB** G D ~~ere o~~ t State Power Dissipation TA = 25 ° C PD 4.9 W R JA ≤ 10 s (Note 1) 3A08 = Specific Device Code A = Assembly Location Continuous Drain TA = 25 ° C ID −9 A Y = Year Current R JA (Note 2) TA = 85 ° C −7 WW = Work Week ~~Poe~~ Power DissipationR JA (Note 2) ~~f~~ F ~~ES~~ TA = 25 ° C PD 0.84 W (Note: Microdot may be in either location) , = Pb−Free Package ~~eea~~ Pulsed Drain Current TA ~~ee~~ = 25 ° C, tp ~~ee~~ = 10 s ~~ee~~ IDM −46 A Operating Junction and Storage Temperature TJ, −55 to ° C **ORDERING INFORMATION** Tstg +150 **Device Package Shipping**[†] ~~a~~ ESD (HBM, JESD22−A114) VESD 5000 V NTTFS3A08PZTAG WDFN8 1500 / Tape & Source Current (Body Diode) IS −3 A (Pb−Free) Reel ~~ET~~ Lead Temperature for Soldering Purposes TL 260 ° C NTTFS3A08PZTWG WDFN8 5000 / Tape & ~~Poes~~ (1/8 ″ from case for 10 s) ~~ee —-—~~ (Pb−Free) Reel †For information on tape and reel specifications, Stresses exceeding Maximum Ratings may damage the device. Maximum including part orientation and tape sizes, please Ratings are stress ratings only. Functional operation above the Recommended refer to our Tape and Reel Packaging Specification Operating Conditions is not implied. Extended exposure to stresses above the Brochure, BRD8011/D. Recommended Operating Conditions may affect device reliability. 

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 

2. Surface−mounted on FR4 board using the minimum recommended pad size. 

Publication Order Number: **NTTFS3A08P/D** 

**1** 

© Semiconductor Components Industries, LLC, 2012 **October, 2012 − Rev. 2** 

**NTTFS3A08PZ** 

## **THERMAL RESISTANCE MAXIMUM RATINGS** 

|**THERMAL RESISTANCE MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Junction−to−Ambient – Steady State (Note 3)|R�JA|55|°C/W|
|Junction−to−Ambient – Steady State (Note 4)|R�JA|148||
|Junction−to−Ambient –(t≤10 s) (Note 3)|R�JA|26||



3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 

4. Surface−mounted on FR4 board using the minimum recommended pad size (40 mm[2] , 1 oz. Cu). 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**Parameter**|**Symbol**|**Test Condition**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||−20|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ||||6||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −16 V|TJ= 25°C|||−1|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=±5 V||||±5|�A|
|**ON CHARACTERISTICS**(Note 5)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−0.4||−1.0|V|
|Negative Threshold Temperature<br>Coefficient|VGS(TH)/TJ||||3.3||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −4.5 V|ID= −12 A||4.9|6.7|m�|
|||VGS= −2.5 V|ID= −10 A||6.9|9.0||
|Forward Transconductance|gFS|VDS = −1.5 V, ID = −8 A|||62||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS = 0 V, f = 1.0 MHz, VDS = −10 V|||5000||pF|
|Output Capacitance|Coss||||600|||
|Reverse Transfer Capacitance|Crss||||540|||
|Total Gate Charge|QG(TOT)|VGS = −4.5 V, VDS = −10 V, ID = −8 A|||56||nC|
|Threshold Gate Charge|QG(TH)||||2.0|||
|Gate−to−Source Charge|QGS||||6.5|||
|Gate−to−Drain Charge|QGD||||15.4|||
|**SWITCHING CHARACTERISTICS**(Note 6)||||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS= −10 V,<br>ID= −8 A, RG= 6.0�|||13||ns|
|Rise Time|tr||||60|||
|Turn−Off Delay Time|td(off)||||250|||
|Fall Time|tf||||170|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −3 A|TJ= 25°C||−0.65|−1.0|V|
|Reverse Recovery Time|tRR|VGS= 0 V, dIS/dt= 100 A/�s,<br>IS= −6 A|||207||ns|
|Charge Time|ta||||45|||
|Discharge Time|tb||||162|||
|Reverse Recovery Charge|QRR||||234||nC|



5. Pulse Test: pulse width = 300 � s, duty cycle � 2%. 

6. Switching characteristics are independent of operating junction temperatures. 

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**2** 

**NTTFS3A08PZ** 

## **TYPICAL CHARACTERISTICS** 

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60 60<br>−2 V VDS ≤  −10 V<br>50 50<br>−4.5 V to −2.5 V<br>40 VGS = −1.8 V 40<br>30 30 TJ = 125 ° C<br>20 20 T J  = 25 ° C<br>TJ = −55 ° C<br>10 10<br>0 0<br>0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 2.5<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>0.10 0.015<br>0.09 TJ = 25 ° C<br>0.08 TJ = 25 ° C VGS = −1.8 V<br>ID = −12 A<br>0.07<br>0.010<br>0.06<br>VGS = −2.5 V<br>0.05<br>0.04 V GS  = −4.5 V<br>0.005<br>0.03<br>0.02<br>0.01<br>0 0<br>1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40<br>−VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.6 100,000<br>1.5 VGS = −4.5 V<br>ID = −12.0 A TJ = 125 ° C<br>1.4<br>1.3 10,000<br>1.2<br>TJ = 85 ° C<br>1.1<br>1.0 1000<br>0.9<br>0.8<br>0.7 100<br>−50 −25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>−I −I<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>) �<br>, LEAKAGE (nA)<br>DSS<br>, NORMALIZED DRAIN−TO− −I<br>SOURCE RESISTANCE (<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**==> picture [187 x 20] intentionally omitted <==**

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Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


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**3** 

**NTTFS3A08PZ** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 592] intentionally omitted <==**

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8000 5 18<br>7200 VTJGS = 25 = 0 V ° C QT 16<br>6400 f = 1 MHz 4 14<br>5600 C iss VGS<br>12<br>4800 3<br>10<br>4000 VDS<br>8<br>3200 2 Q GS<br>2400 QGD VDS = −10 V 6<br>1600 Coss 1 ID = −8 A 4<br>800 C rss TJ = 25 ° C 2<br>0 0 0<br>0 2 4 6 8 10 12 14 16 18 20 0 10 20 30 40 50 60<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 10<br>TJ = 25 ° C<br>td(off)<br>100 tf<br>TJ = 125 ° C TJ = −55 ° C<br>t r 1<br>10 t d(on)<br>VGS = −4.5 V<br>VDD = −10 V<br>ID = −8 A<br>1 0.1<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>0.95 400<br>0.85 350<br>ID = −250  � A<br>0.75 300<br>0.65 250<br>0.55 200<br>0.45 150<br>0.35 100<br>0.25 50<br>0.15 0<br>−50 −25 0 25 50 75 100 125 150 1.E−04 1.E−02 1.E+00 1.E+02<br>TJ, TEMPERATURE ( ° C) SINGLE PULSE TIME (s)<br>−V<br>DS<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>S<br>−I<br> (V)<br>GS(th)<br>−V POWER (W)<br>**----- End of picture text -----**<br>


**Figure 11. Threshold Voltage** 

**Figure 12. Single Pulse Maximum Power Dissipation** 

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**4** 

**NTTFS3A08PZ** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [489 x 382] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>100  � s<br>10 1 ms<br>10 ms<br>V GS  = −8 V<br>1 Single Pulse<br>TC = 25 ° C<br>0.1 RDS(on) Limit dc<br>Thermal Limit<br>Package Limit<br>0.01<br>0.1 1 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 13. Maximum Rated Forward Biased<br>Safe Operating Area<br>60<br>R � JA = 55 ° C/W<br>50<br>40<br>30 Duty Cycle = 0.5<br>20<br>0.05 0.02 0.01<br>0.20<br>10<br>0.10<br>Single Pulse<br>0<br>1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03<br>t, TIME (s)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>THERMAL RESPONSE<br>R(t), EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 14. FET Thermal Response** 

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**5** 

**NTTFS3A08PZ** 

## **PACKAGE DIMENSIONS** 

**WDFN8 3.3x3.3, 0.65P** CASE 511AB ISSUE D 

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2X<br>l o] 0.20 C NOTES:1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>D A 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH<br>L] D1 as B 2X PROTRUSIONS OR GATE BURRS.<br>8 7 6 5 0.20 C DIM MINMILLIMETERSNOM MAX MIN INCHESNOM MAX<br>A 0.70 0.75 0.80 0.028 0.030 0.031<br>cate 4X Pp A1 -_ 0.00 −−− 0.05 0.000 −−− 0.002<br>E1 E b 0.23 0.30 0.40 0.009 0.012 0.016<br>c 0.15 0.20 0.25 0.006 0.008 0.010<br>D 3.30 BSC 0.130 BSC<br>1 2 3 4 c D1 2.95 3.05 3.15 0.116 0.120 0.124<br>“ Ap A1 —ESEEEE D2 1.98 2.11 2.24 0.078 0.083 0.088<br>TOP VIEW E 3.30 BSC 0.130 BSC<br>E1 2.95 3.05 3.15 0.116 0.120 0.124<br>0.10 C E2 1.47 1.60 1.73 0.058 0.063 0.068<br>E3 0.23 0.30 0.40 0.009 0.012 0.016<br>0.10 C eS=. A ra 5 6Xe h SEATINGPLANEC ——————== GKe 0.300.65 0.65 BSC0.410.80 0.510.95 0.0120.026 0.026 BSC0.0160.032 0.0200.037<br>a o 4 — | Ef L 0.30 0.43 0.56 0.012 0.017 0.022<br>SIDE VIEW DETAIL A DETAIL A L1 0.06 0.13 0.20 0.002 0.005 0.008<br>\ === M 1.40 1.50 1.60 0.055 0.059 0.063<br>0  −−− 12  0  −−− 12<br>8X b<br>0.10 C A B<br>SOLDERING FOOTPRINT*<br>0.05 C<br>8X<br>4X L e/2 0.42 0.65 4X<br>1 4 PITCH 0.66<br>PACKAGE<br>K OUTLINE<br>H E2 OT Hate<br>E3 y r M | Ft<br>8 5 L1 3.60<br>G D2<br>A BOTTOM VIEW 0.75 E 0.57 SS 2.30<br>0.47 2.37<br>3.46<br>DIMENSION: MILLIMETERS<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


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