NTTFS022N15MC

## MOSFET - Power, Single N-Channel, Shielded Gate, PowerTrench 150 V, 22 m 37.2 A ~~—.~~ NTTFS022N15MC 

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## **Features** 

- Small Footprint (3.3 x 3.3 mm) for Compact Design 

• Low R to Minimize Conduction Losses DS(on) **V(BR)DSS RDS(on) MAX ID MAX** • Low Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ~~**a**~~ 150 V ~~a~~ 22 m @ 10 V 37.2 A Compliant **Typical Applications N−CHANNEL MOSFET** • Primary DC−DC MOSFET • Synchronous Rectifier in DC−DC and AC−DC **D 5 4 G** • Motor Drive **D 6 3 S** • Capable of 175°C Tj Max Rating =n . = **D 7 2 S MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) **D 8 1 S Parameter Symbol Value Unit** ~~a~~ 5 OEE Drain−to−Source Voltage VDSS 150 V Gate−to−Source Voltage VGS ± 20 V Continuous Drain CurTC = 25 ° C ID 37.2 A rent R JC (Note 5) Power Dissipation TC = 25 ° C PD 71.4 W R JC (Note 5) Continuous Drain CurSteady TA = 25 ° C ID 7.4 A **WDFN8** rent (Notes 1, 5) State ~~a eee~~ **CASE 483AW** Power Dissipation TA = 25 ° C PD 2.8 W (Notes 1, 5) ~~a eee~~ Power Dissipation TA = 25 ° C PD 1.2 W **MARKING DIAGRAM** (Notes 2, 5) ~~a~~ Pulsed Drain Current (Note 3) TC = 25 ° C IDM 158 A &Z&3&K22MC ~~a~~ Operating Junction and Storage Temperature ~~eee~~ TJ, Tstg −55 to ° C a Range +175 ~~Po~~ 22MC = Specific Device Code Single Pulse Drain−to−Source Avalanche EAS 96 mJ &Z = Assembly Location Energy (IL(pk) = 8 A) (Note 4) &3 = 3−Digit Date Code ~~Pe~~ Maximum Lead Temperature for Soldering TL 260 ° C &K = Lot Traceability Purposes (1/8 ″ from case for 10 s) ~~Pt~~ 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Surface mounted on a FR−4 board using 1 in[2] pad of 2 oz copper. 

2. Surface mounted on a FR−4 board using the minimum recommended pad of 2 oz copper. 

3. Pulsed ID please refer to Figure 12 SOA graph for more details 

4. EAS of 96 mJ is based on starting TJ = 25 ° C; L = 3 mH, IAS = 8 A, VDD = 150 V, VGS = 10 V. 

5. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] NTTFS022N15MC WDFN8 3000 / Tape & (Pb−Free) Reel ~~ee~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTTFS022N15MC/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **October, 2020 − Rev. 0** 

**NTTFS022N15MC** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance Junction−to−Case − Steady State (Note 5)|R�JC|2.1|°C/W|
|Thermal Resistance Junction−to−Ambient − Steady State (Notes 1, 5)|R�JA|53|°C/W|
|Thermal Resistance Junction−to−Ambient − Steady State (Notes 2, 5)|R�JA|125|°C/W|



|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)|**ELECTRICAL CHARACTERISTICS **(TJ= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A|150|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/TJ|ID= 250�A, referenced to 25°C||75||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= 120 V, TJ= 25°C|||1|�A|
|Gate−to−Source Leakage Current|IGSS|VGS=±20 V, VDS= 0 V|||±100|nA|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 100�A|2.5||4.5|V|
|Gate Threshold Temperature<br>Coefficient|VGS(TH)/TJ|ID= 100�A, referenced to 25°C||−8.4||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V, ID= 18 A||17.1|22|m�|
|||VGS= 8 V, ID= 9 A||19|25.3|m�|
|Forward Transconductance|gFS|VDS= 10 V, ID= 18 A||37||S|
|**CHARGES, CAPACITANCES & GATE RESISTANCE**|||||||
|Input Capacitance|CISS|VGS = 0 V, f = 1 MHz<br>VDS = 75 V||1315||pF|
|Output Capacitance|COSS|||380|||
|Reverse Transfer Capacitance|CRSS|||6|||
|Gate−Resistance|RG|||0.6|1.2|�|
|Total Gate Charge|QG(TOT)|VGS = 10 V, VDS = 75 V, ID = 18 A||17||nC|
|Threshold Gate Charge|QG(TH)|||4.4|||
|Gate−to−Source Charge|QGS|||7.2|||
|Gate−to−Drain Charge|QGD|||2.7|||
|Plateau Voltage|VGP|||5.6||V|
|Output Charge|QOSS|VGS = 0 V, VDD = 75 V||41||nC|
|**RESISTIVE SWITCHING CHARACTERISTICS**(Note||6)|||||
|Turn−On Delay Time|td(on)|VGS= 10 V, VDS= 75 V,<br>ID= 18 A, RG= 6�||14||ns|
|Rise Time|tr|||2.8|||
|Turn−Off Delay Time|td(off)|||17|||
|Fall Time|tf|||2.9|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|Forward Diode Voltage|VSD|VGS= 0 V, IS= 18 A, TJ= 25°C||0.86|1.2|V|
|Reverse Recovery Time|tRR|VGS= 0 V, VDD= 75 V<br>dIS/dt = 300 A/�s, IS= 18 A||45||ns|
|Reverse Recovery Charge|QRR|||155||nC|
|Reverse Recovery Time|tRR|VGS= 0 V, VDD= 75 V<br>dIS/dt = 1000 A/�s, IS= 18 A||28||ns|
|Reverse Recovery Charge|QRR|||242||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Switching characteristics are independent of operating junction temperature 

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**NTTFS022N15MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [489 x 383] intentionally omitted <==**

**----- Start of picture text -----**<br>
90 6<br>10 V 8.0 V 7.0 V 5.5 V Pulse Duration = 250  � s<br>Duty Cycle = 0.5% Max<br>75 5<br>60 4<br>VGS = 6.0 V<br>45 3<br>6.0 V 7.0 V<br>30 2 8.0 V<br>VGS = 5.5 V<br>15 1 10 V<br>0 0<br>0 2 4 6 8 10 0 15 30 45 60 75 90<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain<br>Current and Gate Voltage<br>2.4 120<br>2.2 ID = 18 A ID = 18 A<br>VGS = 10 V<br>2.0<br>80<br>1.8<br>1.6<br>60<br>1.4<br>1.2 TJ = 150 ° C<br>30<br>1.0<br>0.8 TJ = 25 ° C<br>0.6 0<br>−75 −50 −25 0 25 50 75 100 125 150 175 5 6 7 8 9 10<br>TJ, JUNCTION TEMPERATURE ( ° C) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , NORMALIZED DRAIN−TO−<br>ID<br>SOURCE ON−RESISTANCE<br>DS(on)<br>R<br>) �<br>ON−RESISTANCE , ON−RESISTANCE (m<br>DS(on)<br>, NORMALIZED DRAIN−TO−SOURCE R<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


**Figure 3. Normalized On−Resistance vs. Junction Temperature** 

**==> picture [242 x 172] intentionally omitted <==**

**----- Start of picture text -----**<br>
90<br>VDS = 10 V<br>75<br>60<br>45<br>30<br>TJ = 25 ° C<br>15<br>TJ = 150 ° C TJ = −55 ° C<br>0<br>3 4 5 6 7 8 9<br>VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 5. Transfer Characteristics** 

**Figure 4. On−Resistance vs. Gate−to−Source Voltage** 

**==> picture [243 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>VGS = 0 V<br>10<br>1<br>0.1<br>0.01 TJ = 175 ° C<br>0.001 T J  = 25 ° C T J  = −55 ° C<br>0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, BODY DIODE FORWARD VOLTAGE (V)<br>, REVERSE DRAIN CURRENT (A)<br>IS<br>**----- End of picture text -----**<br>


**Figure 6. Source−to−Drain Diode Forward Voltage vs. Source Current** 

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**NTTFS022N15MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [492 x 592] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 10K<br>ID = 18 A VDD = 25 V<br>8 VDD = 75 V CISS<br>1K<br>COSS<br>6 VDD = 50 V<br>100<br>4<br>10 C RSS<br>2 f = 1 MHz<br>VGS = 0 V<br>0 1<br>0 5 10 15 20 0.1 1 10 100 150<br>Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain−to−Source<br>Voltage<br>40 100K<br>35<br>VGS = 10 V<br>30 10K<br>VGS = 8 V<br>25<br>20 1K<br>15<br>10 100<br>5<br>R � JC = 2.1 ° C/W<br>0 10<br>25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1 1<br>TC, CASE TEMPERATURE ( ° C) t, PULSE WIDTH (s)<br>Figure 9. Drain Current vs. Case Temperature Figure 10. Peak Power<br>30 200<br>100 1 ms 100  � s 10  � s<br>10 ms<br>This area is<br>limited by<br>10 Starting T J  = 25 ° C 10 RDS(on) 100 ms/DC<br>Starting T J = 100 ° C<br>1<br>Single Pulse<br>R � JC = 2.1 ° C/W<br>Starting TJ = 150 ° C 0.1 TC = 25 ° C<br>RDS(on) Limit<br>Thermal Limit<br>Package Limit<br>1 0.01<br>0.001 0.01 0.1 1 10 100 0.1 1 10 100 200<br>tAV, TIME IN AVALANCHE (mS) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>, DRAIN CURRENT (A)<br>ID<br>PEAK TRANSIENT POWER (W)<br>, DRAIN CURRENT (A)<br>, AVALANCHE CURRENT (A) ID<br>IAS<br>**----- End of picture text -----**<br>


**Figure 11. Unclamped Inductive Switching Capability** 

**Figure 12. Forward Bias Safe Operating Area** 

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**NTTFS022N15MC** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [491 x 173] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>a eeee ee<br>eee 50% Duty Cycle<br>1 ee ee l<br>20%<br>Sa rrr rrr TI<br>10%<br>SSS 5% | a = el Pom H<br>0.1 2%<br>_rree t; t l=<br>SSS 1% 2 Z|<br>Ft OO a ee | |<br>Single Pulse<br>0.01 poeePP PT Notes: i<br>R JC = 2.1 C/W<br>a ee ee ee 0 ee ee ee Peak TJ = P DM x Z JC (t) + TC [|<br>ee Duty Cycle, D = t1 / t 2 H<br>0.001 PTT ET |<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>C/W)<br>°<br>, EFFECTIVE TRANSIENT<br>JC<br>Z THERMAL RESISTANCE (<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Impedance** 

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**NTTFS022N15MC** 

## **PACKAGE DIMENSIONS** 

## **WDFN8 3.3X3.3, 0.65P** CASE 483AW ISSUE A 

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