NTTFS012N10MDTAG

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

## MOSFET – Power, Single N-Channel 100 V, 14.4 m 45 A 

## NTTFS012N10MD 

## **Features** 

- Shielded Gate MOSFET Technology 

- Low R to Minimize Conduction Losses DS(on) 

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- Low QG and Capacitance to Minimize Driver Losses 

- Low QRR, Soft Recovery Body Diode 

**V(BR)DSS RDS(on) MAX ID MAX** 14.4 m @ 10 V 100 V 45 A 21.0 m @ 6 V ~~=~~ **N−Channel** D (5 − 8) G (4) ~~3~~ S (1, 2, 3) 

- Low QOSS to Improve Light Load Efficiency 

- These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant 

## **Typical Applications** 

- Primary Switch in Isolated DC−DC Converter 

- Synchronous Rectification (SR) in DC−DC and AC−DC 

- AC−DC Adapters (USB PD) SR 

D (5 − 8) • Load Switch, Hotswap, and ORing Switch • BLDC Motor and Solar Inverter **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) G (4) **Parameter Symbol Value Unit** ~~**e**~~ Drain−to−Source Breakdown Voltage ~~ssGs~~ V(BR)DSS ~~es~~ 100 V ~~3~~ S (1, 2, 3) Gate−to−Source Voltage VGS ± 20 V Continuous Drain CurTC = 25 ° C ID 45 A **MARKING DIAGRAM** ~~es~~ rent R JC (Note 2) Steady 1 Power DissipationR JC (Note 2) State TC = 25 ° C PD 62 W 1 SS XXXX DD ~~ee~~ Continuous Drain Cur- ~~ee~~ TA = 25 ° C ID 9.2 A ° **WDFN8( 8FL)** GS AYWW DD rent R JA (Notes 1, 2) Steady **CASE 511DY** ~~an~~ Power DissipationR JA (Notes 1, 2) State TA = 25 ° C PD 2.7 W ee XXXXA = Specific Device Code= Assembly Location ~~eee~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM 217 A Y = Year Operating Junction and Storage Temperature TJ, Tstg −55 to ° C WW = Work Week= Pb−Free Package Range +150 ~~Ss~~ (Note: Microdot may be in either location) Source Current (Body Diode) IS 51.8 A ~~esee~~ Single Pulse Drain−to−Source Avalanche EAS 121 mJ Energy (IAV = 9 A, L = 3 mH) ~~es~~ **ORDERING INFORMATION** Lead Temperature Soldering Reflow for Solder″ ~~ee~~ TL 300 ° C **Device Package Shipping**[[†]] ing Purposes (1/8 from case for 10 s) NTTFS012N10MD WDFN8 1500 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the (Pb−Free) Reel device. If any of these limits are exceeded, device functionality should not be ~~OE) eo~~ assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, 

**Device Package Shipping**[[†]] NTTFS012N10MD WDFN8 1500 / Tape & (Pb−Free) Reel ~~eo~~ 

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

**THERMAL RESISTANCE MAXIMUM RATINGS** 

**Parameter Symbol Value Unit** Junction−to−Case − Steady State (Note 2) R JC 2.0 ° C/W Junction−to−Ambient − Steady State (Note 2) R JA 46.5 ~~**—** —}}—_~~ 1. Surface−mounted on FR4 board using a 1 in[2] pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

Publication Order Number: **NTTFS012N10MD/D** 

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© Semiconductor Components Industries, LLC, 2020 **June, 2021 − Rev. 1** 

## **NTTFS012N10MD** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) 

|**ELECTRICAL CHARACTERISTICS**(TJ=|25°C unless|otherwise specified)|otherwise specified)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID=|250�A|100|||V|
|Drain−to−Source Breakdown Voltage<br>Temperature Coefficient|V(BR)DSS/<br>TJ|ID= 250�A, ref|to 25°C||60||mV/°C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= 80 V|TJ= 25°C|||1.0|�A|
||||TJ= 125°C|||100||
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS= 20 V||||100|nA|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 78�A||2||4|V|
|Negative Threshold Temperature Coefficient|VGS(TH)/TJ|ID= 78�A, ref to 25°C|||−8.1||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= 10 V|ID= 15 A||12.2|14.4|m�|
|||VGS= 6 V|ID= 7.5 A||16.7|21.0||
|Forward Transconductance|gFS|VDS= 8 V, ID= 15 A|||36||S|
|Gate−Resistance|RG|TA= 25°C|||0.5|1.6|�|
|**CHARGES & CAPACITANCES**||||||||
|Input Capacitance|CISS|VGS= 0 V, f = 1 MHz, VDS= 50 V|||965||pF|
|Output Capacitance|COSS||||270|||
|Reverse Transfer Capacitance|CRSS||||8.4|||
|Output Charge|QOSS|VGS= 0 V, VDS= 50 V|||22||nC|
|Total Gate Charge|QG(TOT)|VGS= 6 V, VDS= 50 V, ID= 15 A|||8||nC|
|Total Gate Charge|QG(TOT)|VGS= 10 V, VDS= 50 V,<br>ID= 15 A|||13|||
|Gate−to−Source Charge|QGS||||4.6|||
|Gate−to−Drain Charge|QGD||||1.8|||
|Plateau Voltage|VGP||||4.5||V|
|**SWITCHING CHARACTERISTICS**(Note 3)||||||||
|Turn−On Delay Time|td(ON)|VGS= 10 V, VDS= 50 V,<br>ID= 15 A, RG= 6�|||12||ns|
|Rise Time|tr||||2.7|||
|Turn−Off Delay Time|td(OFF)||||17|||
|Fall Time|tf||||2.6|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 15 A|TJ= 25°C||0.85||V|
||||TJ= 125°C||0.72|||
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 1000 A/�s,<br>IS= 7.5 A|||20||ns|
|Reverse Recovery Charge|QRR||||116||nC|
|Reverse Recovery Time|tRR|VGS= 0 V, dIs/dt = 100 A/�s,<br>IS= 15 A|||36||ns|
|Reverse Recovery Charge|QRR||||34||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. 4. R � JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R � JC is guaranteed by design while R � CA is determined by the user’s board design. 5. Pulse Test: Pulse Width < 300 � s. Duty cycle < 2%. 6. EAS of 121 mJ is based on started TJ = 25 ° C, L = 3 mH, IAV = 9 A, VDD = 100 V, VGS = 15 V. 100% test at L = 0.1 mH, IAV = 24 A. 

7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. 

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**NTTFS012N10MD** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
45 45<br>10 V 5.6 V VGS = 5.4 V VDS = 8 V<br>40 40<br>35 5.2 V 35<br>30 30<br>25 5.0 V 25<br>20 4.8 V 20 TJ = 25 ° C<br>15 15<br>4.6 V<br>10 10<br>4.4 V<br>5 5<br>TJ = 125 ° C TJ = −55 ° C<br>0 0<br>0 1 2 3 4 5 2 3 4 5 6<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>18 20<br>17 TJ = 25 ° C 19 TJ = 25 ° C<br>ID = 15 A<br>18<br>16<br>17 V GS  = 6 V<br>15<br>16<br>14 15<br>14<br>13<br>13<br>12 VGS = 10 V<br>12<br>11<br>11<br>10 10<br>4 5 6 7 8 9 10 5 6 7 8 9 10 11 12 13 14 15<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.5 10<br>VIDGS = 15 A = 10 V TJ = 150 ° C<br>1<br>2.0<br>TJ = 125 ° C<br>0.1<br>TJ = 85 ° C<br>1.5<br>0.01 TJ = 25 ° C<br>1.0<br>0.001<br>0.5 0.0001<br>−50 −25 0 25 50 75 100 125 150 10 20 30 40 50 60 70 80 90 100<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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**NTTFS012N10MD** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10K 10<br>9<br>CISS 8<br>1K<br>7<br>C OSS 6<br>QGSGS QGDGD<br>100 5<br>4<br>3<br>10 VGS = 0 V CRSS 2 TJ = 25J = 25 = 25 ° C<br>TJ = 25 ° C 1 ID = 15 AD = 15 A = 15 A<br>f = 1 MHz VDS = 50 VDS = 50 V = 50 V<br>1 0<br>0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>100 10<br>VGS = 10 V V GS  = 0 V<br>VDS = 50 V<br>I D  = 15 A<br>td(off)<br>tr<br>10 td(on) tf<br>1 1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C<br>1 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>100 50<br>10 125 ° C TJ(initial) = 25 ° C<br>TC = 25 ° C 10<br>Single Pulse<br>R � JC  = 2.0 ° C/W<br>1 TJ = Max Rated 100 � s<br>100 ° C<br>RDS(on) Limit<br>Thermal Limit 10 ms<br>Package Limit 1 s 100 ms<br>0.1 1<br>0.1 1 10 100 0.001 0.01 0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (mS)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>ID , AVALANCHE CURRENT (A)<br>IAS<br>**----- End of picture text -----**<br>


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10<br>9<br>8<br>7<br>6<br>QGSGS QGDGD<br>5<br>4<br>3<br>2 TJ = 25J = 25 = 25 ° C<br>ID = 15 AD = 15 A = 15 A<br>1<br>VDS = 50 VDS = 50 V = 50 V<br>0<br>0 2 4 6 8 10 12 14<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 12. Maximum Drain Current vs. Time in Avalanche** 

**Figure 11. Maximum Rated Forward Biased Safe Operating Area** 

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**NTTFS012N10MD** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10<br>1 Duty Cycle = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02<br>0.01<br>0.01 Single Pulse<br>0.001<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>C/W)<br>°<br>IMPEDANCE (<br>, NORMALIZED THERMAL<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Impedance** 

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**NTTFS012N10MD** 

## **PACKAGE DIMENSIONS** 

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**WDFN8 3.3x3.3, 0.65P** CASE 511DY ISSUE A 

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**NTTFS012N10MD** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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