NTTFS008P03P8Z

## MOSFET - Power, Single P-Channel, Power33 -30 V, 3.8 m -96 A 

## NTTFS008P03P8Z 

## **Features** 

- Ultra Low RDS(on) to Improve System Efficiency 

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- Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction 

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ~~ee~~ **V(BR)DSS RDS(on)** ~~ee ee~~ **ID** Compliant 3.8 m @ −10 V −30 V −96 A **Typical Applications** 6.5 m @ −4.5 V • Power Load Switch • Protection: Reverse Current, Over Voltage, and Reverse Negative S (1, 2, 3) Voltage • Battery Management **MAXIMUM RATINGS** (TJ = 25J = 25 = 25 ° C unless otherwise noted) G (4) **P−Channel MOSFET Parameter Symbol Value Unit** Drain−to−Source Voltage VDSS −30 V ~~eept~~ Gate−to−Source Voltage V ~~ee~~ GS ~~ee~~ 25 V a ~~c~~ D (5, 6, 7, 8) Continuous Drain CurTC = 25 ° C ID −96 A ~~PESTS~~ rent R JC (Notes 1, 2) Steady TC = 85 ° C −69 **MARKINGDIAGRAM** Power Dissipation R JC State TC = 25 ° C PD 50 W (Notes 1, 2) ~~ene~~ @ 8P03 Continuous Drain CurTA = 25 ° C ID −22 A **PQFN8** AYWWZZ rent R JA (Notes 1, 2) Steady TA = 85 ° C −16 **CASE 483AW(Power33)** Power Dissipation R JA State TA = 25 ° C PD 2.36 W (Notes 1, 2) 8P03 = Specific Device Code ~~**a** eesee~~ A = Assembly Location a ~~ee~~ Pulsed Drain Current TA = 25 ° C, tp = 10 s IDM −418 A Y = Year Operating Junction and Storage Temperature TJ, Tstg −55 to ° C WW = Work Week Range 150 ZZ = Assembly Lot Code ~~ee~~ Lead Temperature for Soldering Purposes TL 260 ° C (1/8 ″ from case for 10 s) ~~ee~~ 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- Power Load Switch 

- Protection: Reverse Current, Over Voltage, and Reverse Negative Voltage 

- Battery Management 

## **MAXIMUM RATINGS** (TJ = 25J = 25 = 25 ° C unless otherwise noted) 

## **ORDERING INFORMATION** 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

|**Device**<br>**Package**<br>**Shipping**†|
|---|
|NTTFS008P03P8ZTWG<br>PQFN8<br>3000 / Tape &|
|(Pb−Free)<br>Reel|
|†For information on tape and reel specifications,|
|including part orientation and tape sizes, please<br>refer to our Tape and Reel Packaging Specification<br>Brochure, BRD8011/D.|



## **THERMAL RESISTANCE MAXIMUM RATINGS** 

**Parameter Symbol Value Unit** Junction−to−Case − Steady State (Drain) R JC 2.5 ° C/W (Note 2) ~~Pt a~~ Junction−to−Ambient − Steady State (Note 2) R JA 47 ° C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

2. Surface−mounted on FR4 board using a 1 in[2] , 2 oz. Cu pad. Assuming a 76mm x 76mm x 1.6mm board. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2017 **May, 2020 − Rev. 3** 

**NTTFS008P03P8Z/D** 

## **NTTFS008P03P8Z** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C u|nless otherwise noted)|nless otherwise noted)|||||
|---|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**||**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**||||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A||−30|||V|
|Drain−to−Source Breakdown Volt-<br>age Temperature Coefficient|V(BR)DSS/<br>TJ|ID= −250�A, ref to 25°C|||−8||mV/°<br>C|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V,<br>VDS= −24 V|TJ= 25°C|||−1.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�25 V||||�10|�A|
|**ON CHARACTERISTICS**(Note 3)||||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A||−1.0||−3.0|V|
|Threshold Temperature Coefficient|VGS(TH)/TJ|ID= −250�A, ref to 25°C|||5.9||mV/°C|
|Drain−to−Source On Resistance|RDS(on)|VGS= −10 V, ID= −18 A|||2.5|3.8|m�|
|||VGS= −4.5 V, ID= −14 A|||4.3|6.5||
|Froward Transconductance|gFS|VDS= −5 V, ID= −14 A|||74||S|
|**CHARGES AND CAPACITANCES**||||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= −15 V|||5600||pF|
|Output Capacitance|Coss||||1940|||
|Reverse Transfer Capacitance|Crss||||1890|||
|Total Gate Charge|QG(TOT)|VGS= −10 V, VDS= −15 V,<br>ID= −14 A|||134||nC|
|Threshold Gate Charge|QG(TH)||||3|||
|Gate−to−Source Charge|QGS||||15|||
|Gate−to−Drain Charge|QGD||||51|||
|Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −15 V,<br>ID= −14 A|||82|||
|**SWITCHING CHARACTERISTICS, VGS = 4.5 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS= −15 V,<br>ID= −14 A, RG= 6�|||49||ns|
|Rise Time|tr||||248|||
|Turn−Off Delay Time|td(off)||||95|||
|Fall Time|tf||||187|||
|**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 3)||||||||
|Turn−On Delay Time|td(on)|VGS= −10 V, VDS= −15 V,<br>ID= −14 A, RG= 6�|||19||ns|
|Rise Time|tr||||53|||
|Turn−Off Delay Time|td(off)||||201|||
|Fall Time|tf||||177|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= −14 A|TJ= 25°C||−0.77|−1.3|V|
||||TJ= 125°C||−0.63|||
|Reverse Recovery Time|tRR|VGS= 0 V, dls/dt = 100 A/�s,<br>Is= −14 A|||52||ns|
|Charge Time|ta||||21|||
|Discharge Time|tb||||30|||
|Reverse Recovery Charge|QRR||||31||nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 � s, Duty Cycle ≤ 2%. 

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**NTTFS008P03P8Z** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
150 150<br>130140 4.0 V 140130 VDS = −10 V<br>120 120<br>100110 VGS = 10 V to 4.5 V 3.5 V 100110<br>90 90<br>80 80<br>70 70<br>60 60<br>50 50<br>40 40 T J  = 25 ° C<br>30 30<br>20 20<br>100 100 TJ = 125 ° C T J  = −55 ° C<br>0 0.5 1.0 1.5 2.0 2.5 3.0 0 1.0 1.5 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>20 6<br>1618 TID J  = −18 A = 25 ° C 5 TJ = 25 ° C V GS  = −4.5 V<br>14<br>4<br>12<br>10 3<br>VGS = −10 V<br>8<br>2<br>6<br>4<br>1<br>2<br>0 0<br>3 4 5 6 7 8 9 10 10 30 50 70 90 110 130 150<br>VGS, GATE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.0 1.E+05<br>VGS = 10 V TJ = 150 ° C<br>ID = −18 A 1.E+04<br>1.5 TJ = 125 ° C<br>1.E+03<br>TJ = 85 ° C<br>1.0 1.E+02<br>1.E+01<br>0.5 TJ = 25 ° C<br>1.E+00<br>0 1.E−01<br>−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current<br>Temperature vs. Voltage<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>D D<br>−I −I<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− DSS<br>DS(on) SOURCE RESISTANCE −I<br>R<br>**----- End of picture text -----**<br>


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**NTTFS008P03P8Z** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10K 10<br>COSS CISS 9 VDS = −15 V<br>ID = −14 A<br>C RSS 8 T J  = 25 ° C<br>7<br>6<br>1K 5<br>4 Q GS Q GD<br>3<br>VGS = 0 V 2<br>T J  = 25 ° C<br>1<br>f = 1 MHz<br>100 0<br>0.01 0.1 1 10 100 0 20 40 60 80 100 120 140<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC)<br>Figure 7. Capacitance Variation Figure 8. Gate−to−Source and<br>Drain−to−Source Voltage vs. Total Charge<br>1000 16<br>VGS = 0 V<br>14<br>td(off) 12<br>100<br>tf 10<br>tr 8<br>6<br>10 td(on)<br>VGS = −10 V 4 T J  = 125 ° C TJ = 25 ° C<br>VDS = −15 V 2<br>1 ID = −14 A 0 TJ = −55 ° C<br>1 10 100 0 0.2 0.4 0.6 0.8 1.0<br>RG, GATE RESISTANCE ( � ) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

**==> picture [244 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
1000<br>100<br>10<br>500  � s<br>1 ms<br>1 T C  = 25 ° C 10 ms<br>Single Pulse 100 ms<br>VGS ≤  10 V 1 s<br>0.1 RDS(on) Limit DC<br>Thermal Limit<br>Package Limit<br>0.01<br>0.1 1 10 100<br>VDS, DRAIN−TO−SOURCE VOLTAGE(V)<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Safe Operating Area** 

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## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
100<br>50% Duty Cycle<br>20%<br>10<br>10%<br>5%<br>2%<br>1<br>1%<br>0.1<br>Single Pulse<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>(t) (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br>


**Figure 12. Thermal Characteristics** 

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## **PACKAGE DIMENSIONS** 

**PQFN8 3.3X3.3, 0.65P** CASE 483AW ISSUE O 

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**NTTFS008P03P8Z** 

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