NTTFD4D0N04HLTWG

MOSFET - Symmetrical Dual N-Channel 40 V, 4.5 m 60 A 

## NTTFD4D0N04HL 

## **General Description** 

This device includes two specialized N−Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. 

## **Features** 

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|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**|
|---|---|---|
|40 V|4.5 m @ 10 V|60 A|
||7 m @ 4.5 V||



## Q1: N−Channel 

- Max rDS(on) = 4.5 m Q at VGS = 10 V, ID = 10 A 

- Max rDS(on) = 7 m Q at VGS = 4.5, ID = 8.0 A 

- Q2: N−Channel 

- Max rDS(on) = 4.5 m at VGS = 10 V, ID = 10 A 

- Max rDS(on) = 7 m Q at VGS = 4.5, ID = 8.0 A 

- Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses 

## **ELECTRICAL CONNECTION** 

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GND SW GND SW<br> GND<br>LSG SW LSG SW<br>V+ 3s}r77 V+ 77 8 SW V+ 3 i8 SW<br>V+ HSG V+ HSG<br>**----- End of picture text -----**<br>


**Dual N-Channel MOSFET** 

- RoHS Compliant 

## **Typical Applications** 

- Computing 

- Communications 

- General Purpose Point of Load 

## **PIN DESCRIPTION** 

|**Pin**|**Name**|**Description**|
|---|---|---|
|1, 11, 12|GND (LSS)|Low Side Source|
|2|LSG|Low Side Gate|
|3, 4, 5, 6|V + (HSD)|High Side Drain|
|7|HSG|High Side Gate|
|8, 9, 10|SW|Switching Node, Low Side Drain|



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PIN1<br>PIN1<br>Top Bottom<br>WQFN12, 3x3<br>CASE 510CJ<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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&Z&3&K<br>NTTFD<br>4D0N04HL<br>&Z = Assembly Plant Code<br>&3 = Numeric Date Code<br>&K = Lot Code<br>NTTFD4D0N04HL = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NTTFD4D0N04HLTWG|WQFN12<br>(Pb−Free)|3000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **NTTFD4D0N04HL/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **April, 2020 − Rev. 1** 

**NTTFD4D0N04HL** 

**MOSFET MAXIMUM RATINGS** (TA = 25 ° C, Unless otherwise specified) 

|**MOSFET M**|**AXIMUM RATINGS**(TA= 25°C, Unless otherwise specified)||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Q1**|**Q2**|**Units**|
|VDS|Drain−to−Source Voltage|40|40|V|
|VGS|Gate−to−Source Voltage|±20|±20|V|
|ID|Drain Current<br>−Continuous<br>TC= 25°C<br>(Note 4)|60|60|A|
||−Continuous<br>TC= 100°C<br>(Note 4)|37|37||
||−Continuous<br>TA= 25°C|15 (Note 1a)|15 (Note 1b)||
||−Pulsed<br>TA= 25°C|349|349||
|EAS|Single Pulse Avalanche Energy<br>(Note 3)|67|67|mJ|
|PD|Power Dissipation for Single Operation<br>TC= 25°C|26|26|W|
||Power Dissipation for Single Operation<br>TA= 25°C|1.7 (Note 1a)|1.7 (Note 1b)||
|TJ, TSTG|Operating and Storage Junction Temperature Range|−55 to +150||°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL**|**CHARACTERISTICS**||||
|---|---|---|---|---|
|**Symbol**|**Parameter**|**Q1**|**Q2**|**Units**|
|R�JC|Thermal Resistance, Junction−to−Case|4.8|4.8|°C/W|
|R�JA|Thermal Resistance, Junction−to−Ambient (Note 1a), max copper|70 (Note 1a)|70 (Note 1b)||
|R�JA|Thermal Resistance, Junction−to−Ambient (Note 1c), min copper|135 (Note 1a)|135 (Note 1b)||



**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRI**|**CAL CHARACTERISTICS**(TJ= 25°C|unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**||||||||
|BVDSS|Drain−to−Source Breakdown Voltage|ID= 250�A, VGS= 0 V|Q1|40|||V|
|||ID= 250�A, VGS= 0 V|Q2|40||||
|�BVDSS<br>�TJ|Breakdown Voltage Temperature<br>Coefficient|ID= 250�A, referenced to 25°C|Q1||16.63||mV/°C|
|||ID= 250�A, referenced to 25°C|Q2||16.63|||
|IDSS|Zero Gate Voltage Drain Current|VDS= 40 V, VGS= 0 V|Q1|||10|�A|
|||VDS= 40 V, VGS= 0 V|Q2|||10||
|IGSS|Gate−to−Source Leakage Current,<br>Forward|VGS= +20/−16 V, VDS= 0 V|Q1|||±100|nA|
|||VGS= +20/−16 V, VDS= 0 V|Q2|||±100||
|**ON CHARACTERISTICS**||||||||
|VGS(th)|Gate−to−Source Threshold Voltage|VGS= VDS, ID= 50�A|Q1|1.2|1.5|2.0|V|
|||VGS= VDS, ID= 50�A|Q2|1.2|1.5|2.0||
|�VGS(th)<br>�TJ|Gate−to−Source Threshold Voltage<br>Temperature Coefficient|ID= 50�A, referenced to 25°C|Q1||−5.75||mV/°C|
|||ID= 50�A, referenced to 25°C|Q2||−5.75|||
|rDS(on)|Drain−to−Source On Resistance|VGS= 10 V, ID= 10 A|Q1||3.7|4.5|m�|
|||VGS= 4.5 V, ID= 8 A|||5.8|7||
|||VGS= 10 V, ID= 10 A, TJ= 125°C|||6.4|||
|rDS(on)|Drain−to−Source On Resistance|VGS= 10 V, ID= 10 A|Q2||3.7|4.5|m�|
|||VGS= 4.5 V, ID= 8 A|||5.8|7||
|||VGS= 10 V, ID= 10 A, TJ= 125°C|||6.4|||
|gFS|Forward Transconductance|VDS= 15 V, ID= 10 A|Q1||61||S|
|||VDS= 15 V, ID= 10 A|Q2||61|||



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## **NTTFD4D0N04HL** 

**ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRI**|**CAL CHARACTERISTICS**(TJ= 25°C|unless otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Type**|**Min**|**Typ**|**Max**|**Units**|
|**DYNAMIC**|**CHARACTERISTICS**|||||||
|CISS|Input Capacitance|Q1:<br>VDS= 20 V, VGS= 0 V, f = 1 Mhz<br>Q2:<br>VDS= 20 V, VGS= 0 V, f = 1 MHz|Q1||1100||pF|
||||Q2||1100|||
|COSS|Output Capacitance||Q1||271||pF|
||||Q2||271|||
|CRSS|Reverse Transfer Capacitance||Q1||22||pF|
||||Q2||22|||
|RG|Gate Resistance|TA= 25°C|Q1||2.0||�|
||||Q2||2.0|||
|**SWITCHING CHARACTERISTICS**||||||||
|td(ON)|Turn−On Delay Time|Q1:<br>VDD= 32 V, ID= 30.5 A,<br>VGS= 4.5 V, RGEN= 2.5�<br>Q2:<br>VDD= 32 V, ID= 30.5 A,<br>VGS= 4.5 V, RGEN= 2.5�|Q1||9.5||ns|
||||Q2||9.5|||
|tr|Rise Time||Q1||5.6||ns|
||||Q2||5.6|||
|tD(OFF)|Turn−Off Delay Time||Q1||1.7||ns|
||||Q2||1.7|||
|tf|Fall Time||Q1||5.8||ns|
||||Q2||5.8|||
|Qg|Total Gate Charge|VGS= 0 V to 10 V<br>VGS= 0 V to 4.5 V<br>Q1:<br>VDD= 32 V,<br>ID= 30.5 A<br>Q2:<br>VDD= 32 V,<br>ID= 30.5 A|Q1||18||nC|
||||Q2||18|||
|Qg|Total Gate Charge||Q1||8.6||nC|
||||Q2||8.6|||
|Qgs|Gate−to−Source Gate Charge||Q1||3.1||nC|
||||Q2||3.1|||
|Qgd|Gate−to−Drain “Miller” Charge||Q1||3.2||nC|
||||Q2||3.2|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||
|VSD|Source to Drain Diode Forward Voltage|VGS= 0 V, IS= 10 A<br>(Note 2)|Q1||0.78|1.2|V|
|||VGS= 0 V, IS= 10 A<br>(Note 2)|Q2||0.78|1.2||
|trr|Reverse Recovery Time|Q1:<br>IF= 30.5 A, di/dt = 100 A/�s<br>Q2:<br>IF= 30.5 A, di/dt = 100 A/�s|Q1||26||ns|
||||Q2||26|||
|Qrr|Reverse Recovery Charge||Q1||9||nC|
||||Q2||9|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. R � JA is determined with the device mounted on a 1 in[2] pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R � CA is determined by the user’s board design. 

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**NTTFD4D0N04HL** 

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G DF DS SF SS<br>**----- End of picture text -----**<br>


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G DF DS SF SS<br>**----- End of picture text -----**<br>


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a) 70 ° C/W when mounted on  b) 70 ° C/W when mounted on<br>a 1 in [2]  pad of 2 oz copper. a 1 in [2]  pad of 2 oz copper.<br>c) 135 ° C/W when mounted on  d) 135 ° C/W when mounted on<br>a minimum pad of 2 oz copper. -W a minimum pad of 2 oz copper.<br>G DF DS SF SS<br>**----- End of picture text -----**<br>


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-W<br>if<br>060000<br>G DF DS SF SS<br>G DF DS SF SS<br>**----- End of picture text -----**<br>


2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 0 

3. Q1: EAS of 67 mJ is based on starting TJ = 25 ° C; N−ch: L = 1 mH, IAS = 11.6 A, VDD = 40 V, VGS = 10 V. 100% test at L = 1 mH, IAS = 11.6 A. Q2: EAS of 67 mJ is based on starting TJ = 25 C; N−ch: L = 1 mH, IAS = 11.6 A, VDD = 40 V, VGS = 10 V. 100% test at L = 1 mH, IAS = 11.6 A. 

4. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro−mechanical application board design. 

POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 

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## **TYPICAL CHARACTERISTICS** 

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60 60<br>54 VGSto 3.2 V = 10 V 3.0 V VDS = 5 V<br>50<br>48<br>42<br>2.8 V 40<br>36<br>30 30<br>24<br>2.6 V 20 TJ = 25 ° C<br>18<br>12<br>2.4 V 10<br>60 2.2 V 0 TJ = 150 ° C TJ = −55 ° C<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>300 10<br>250 TIDJ = 25= 10 A ° C 988 TJ = 25J = 25 = 25 ° C<br>7<br>200<br>VGS = 4.5 VGS = 4.5 V = 4.5 V<br>6<br>150 5<br>4 V GS  = 10 V<br>100<br>3<br>2<br>50<br>1<br>0 0<br>2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60<br>VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>2.0 100K<br>1.8 V GS = 10 V VGS = 0 V<br>ID = 10 A TJ = 150 ° C<br>10K<br>1.6<br>1.4 TJ = 125 ° C<br>1K<br>1.2<br>TJ = 85 ° C<br>1.0<br>100<br>0.8<br>0.6 10<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE−RESISTANCE (m<br>DS(on)<br>R DS(on)<br>R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− IDSS<br>SOURCE RESISTANCE<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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10<br>TJ = 25J = 25 = 25 ° C<br>988<br>7<br>VGS = 4.5 VGS = 4.5 V = 4.5 V<br>6<br>5<br>4 V GS  = 10 V<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50 60<br>ID, DRAIN CURRENT (A)D, DRAIN CURRENT (A), DRAIN CURRENT (A)<br>) �<br>, DRAIN−TO−SOURCE−RESISTANCE (m<br>DS(on)<br>R<br>**----- End of picture text -----**<br>


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Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

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## **TYPICAL CHARACTERISTICS** 

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10K<br>C ISS<br>1K<br>COSS<br>100<br>C RSS<br>10 f = 1 MHz<br>VGS = 0 V<br>TJ = 25 ° C<br>1<br>0 5 10 15 20 25 30 35 40<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

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10<br>QG(TOT)<br>9<br>8<br>7<br>6<br>5<br>4 Q GS Q GD<br>3<br>2 V DS  = 32 V<br>ID = 30.5 A<br>1 T J  = 25 ° C<br>0<br>0 2 4 6 8 10 12 14 16 18<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Gate−to−Source vs. Total Charge** 

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1000 1000<br>VGS = 4.5 V VGS = 0 V<br>VDS = 32 V<br>100 ID = 30.5 A 100<br>td(on)<br>10 10<br>tf<br>tr<br>1 1<br>td(off) T J  = 150 ° C T J  = 25 ° C T J  = −55 ° C<br>0.1 0.1<br>1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>1000<br>TA = 25 ° C, VGS ≤  10 V<br>Single Pulse<br>R � JA  = 135 ° C/W 10  � s<br>100 100<br>T J(initial)  = 25 ° C 100  � s<br>10<br>10<br>1 1 ms<br>TJ(initial) = 125 ° C RDS(on) Limit 10 ms<br>Thermal Limit 100 ms<br>Package Limit 1 sec<br>1 0.1<br>0.000001 0.0001 0.001 0.01 0.1 1 0.1 1 10 100<br>tAV, TIME IN AVALANCHE (sec) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br> (A)<br>IPEAK<br>, DRAIN CURRENT (A)<br>ID<br>**----- End of picture text -----**<br>


**Figure 11. Unclamped Inductive Switching Capability** 

**Figure 12. Forward Bias Safe Operating Area** 

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## **TYPICAL CHARACTERISTICS** 

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1000<br>100 Duty Cycle = 0.5<br>0.2<br>0.1<br>10<br>0.05<br>0.02<br>1 0.01<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>, (<br>JA<br>�<br>Z<br>**----- End of picture text -----**<br>


**Figure 13. Transient Thermal Impedance** 

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**NTTFD4D0N04HL** 

## **PACKAGE DIMENSIONS** 

**WQFN12 3.3X3.3, 0.65P** CASE 510CJ ISSUE O 

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