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NTTFD1D8N02P1E
MOSFET, POWER, DUAL N-CHANNEL POWER CLIP
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- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- SVHC: Lead (25-Jun-2025)
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.493 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MOSFET - Power, N-Channel PowerTrench Power Clip 25 V As mmetric Dual y ## NTTFD1D8N02P1E ## **Features** - Small Footprint (3.3mm x 3.3mm) for Compact Design ## **www.onsemi.com** - Low R to Minimize Conduction Losses DS(on) - Low QG and Capacitance to Minimize Driver Losses - These Devices are Pb−Free and are RoHS Compliant ## **Typical Applications** - DC−DC Converters - System Voltage Rails ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25J = 25= 25°C unless otherwise noted)|C unless otherwise noted)|C unless otherwise noted)||| |---|---|---|---|---|---|---| |**Parameter**|||**Symbol**|**Q1**|**Q2**|**Unit**| |Drain−to−Source Voltage|||VDSS|25|25|V| |Gate−to−Source Voltage|||VGS|+16<br>−12|+16<br>−12|V| |Continuous Drain<br>Current R JC<br>(Note 3)|Steady<br>State|TC= 25°C|ID|61|126|A| |||TC= 85°C||44|91|| |Power Dissipation<br>R JC(Note 3)||TA= 25°C|PD|25|36|W| |Continuous Drain<br>Current R JA<br>(Notes 1, 3)|Steady<br>State<br>~~Se~~|TA= 25°C|ID|15|30|A| |||TA= 85°C||11|21|| |Power Dissipation<br>R JA(Notes 1, 3)||TA= 25°C<br>~~Se~~|PD<br>~~|~~|1.6<br>~~||~~|2.0<br>~~|~~|W| |Continuous Drain<br>Current R JA<br>(Notes 2, 3)|Steady<br>State<br>~~Se~~<br>~~pe~~<br>~~es~~|TA= 25°C<br>~~Se~~<br>~~pe~~|ID<br>~~|~~<br>~~|~~|11<br>~~||~~<br>~~||~~|21<br>~~|~~<br>~~|~~|A| |||TA= 85°C<br>~~Se~~<br>~~pe~~||8<br>~~| |~~<br>~~||~~|15<br>~~|~~<br>~~|~~|| |Power Dissipation<br>R JA(Notes 2, 3)||TA= 25°C<br>~~pe~~<br>~~es~~|PD<br>~~|~~<br>~~ee~~|0.8<br>~~| |~~|0.9<br>~~|~~|W| |Pulsed Drain Current<br>~~ee~~|TA= 25°C, tp= 10 s<br>~~ee~~<br>~~es~~||IDM<br>~~ee~~<br>~~ee~~|483<br>~~ee~~|861<br>~~ee~~|A<br>~~ee~~| |Single Pulse Drain−to−Source Avalanche<br>Energy<br>Q1: IL= 15.8 Apk, L = 0.3 mH (Note 4)<br>Q2: IL= 31.63 Apk, L = 0.3 mH (Note 4)<br>~~es~~|||EAS<br>~~ee~~|37.3|150.<br>1|mJ| |Operating Junction and Storage Temperature|||TJ, Tstg|−55 to + 150||°C| |Lead Temperature for Soldering<br>Purposes (1/8″from case for 10 s)|||TL|260||°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in[2] pad size, 2 oz. Cu pad. 2. Surface−mounted on FR4 board using minimum pad size, 2 oz. Cu pad. 3. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Actual continuous current will be limited by thermal & electro−mechanical application board design. R 6 JC is determined by the user’s board design. |**FET**|**V(BR)DSS**|**RDS(ON) MAX**|**ID MAX**| |---|---|---|---| |Q1|25 V|4.2 m @ 10 V|61 A| |||5.3 m @ 4.5 V|| |Q2|25 V|1.4 m @ 10 V|126 A| |||1.8 m @ 4.5 V|| ## **ELECTRICAL CONNECTION** **MARKING DIAGRAM** AYWWZZ CASE 48302 3.3x3.3 2EMN = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**†| |---|---|---| |NTTFD1D8N02P1E|PQFN8<br>(Pb−Free)|3000 / Tape &<br>Reel| - †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 4. Q1 100% UIS tested at L = 0.1 mH, IAS = 24.2 A. Q2 100% UIS tested at L = 0.1 mH, IAS = 48.1 A. 5. This device does not have ESD protection diode. Publication Order Number: **NTTFD1D8N02P1E/D** **1** © Semiconductor Components Industries, LLC, 2019 **February, 2020 − Rev. 1** **NTTFD1D8N02P1E** ## **THERMAL RESISTANCE MAXIMUM RATINGS** |**Parameter**|**Parameter**||**Symbol**|**Q1 Max**|**Q1 Max**|**Q2 Max**|**Q2 Max**|**Unit**| |---|---|---|---|---|---|---|---|---| |Junction−to−Case − Steady State (Notes 1, 3)|||R�JC|5.0||3.5||°C/W| |Junction−to−Ambient − Steady State (Notes 1,||3)|R�JA|77||63||| |Junction−to−Ambient − Steady State (Notes 2,||3)|R�JA|158||132||| |**ELECTRICAL CHARACTERISTICS**(TJ=||25°C unless otherwise specified)||||||| |**Parameter**|**Symbol**|**Test Condition**||**FET**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||||| |Drain−to−Source Breakdown<br>Voltage|V(BR)DSS|VGS= 0 V, ID= 250�A||Q1|25|||V| |||VGS= 0 V, ID= 1 mA||Q2|25|||| |Drain−to−Source Breakdown<br>Voltage Temperature<br>Coefficient|V(BR)DSS/<br>TJ|ID= 250�A, ref to 25°C||Q1||16||mV/°C| |||ID= 1 mA, ref to 25°C||Q2||16||| |Zero Gate Voltage Drain<br>Current|IDSS|VGS= 0 V,<br>VDS= 20 V|TJ= 25°C|Q1|||10|�A| |||||Q2|||10|| |Gate−to−Source Leakage<br>Current|IGSS|VDS= 0 V, VGS= +16 V / −12 V||Q1|||±100|nA| |||VDS= 0 V, VGS= +16 V / −12 V||Q2|||±100|| |**ON CHARACTERISTICS**(Note 6)||||||||| |Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= 190�A||Q1|1.2||2.0|V| |||VGS= VDS, ID= 310�A||Q2|1.2||2.0|| |Negative Threshold<br>Temperature Coefficient|VGS(TH)/TJ|ID= 190�A, ref to 25°C||Q1||−4.4||mV/°C| |||ID= 310�A, ref to 25°C||Q2||−4.7||| |Drain−to−Source On<br>Resistance|RDS(on)|VGS= 10 V, ID= 15 A||Q1||3.3|4.2|m�| |||VGS= 4.5 V, ID= 13 A||||4.2|5.3|| |||VGS= 10 V, ID= 29 A||Q2||1.04|1.4|| |||VGS= 4.5 V, ID= 26 A||||1.34|1.8|| |Forward Transconductance|gFS|VDS= 5 V, ID= 15 A||Q1||105||S| |||VDS= 5 V, ID= 29 A||Q2||207||| |Gate−Resistance|RG|TA= 25°C||Q1||0.54||�| |||||Q2||0.45||| |**CHARGES, CAPACITANCES &**|**GATE RESISTANCE**|||||||| |Input Capacitance|CISS|VGS= 0 V, VDS= 13 V, f = 1 MHz||Q1||873||pF| |||||Q2||2700||| |Output Capacitance|COSS|||Q1||243||pF| |||||Q2||748||| |Reverse Transfer Capacitance|CRSS|||Q1||19||pF| |||||Q2||48||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **2** **NTTFD1D8N02P1E** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise specified) |**ELECTRICAL CHARACTERI**|**STICS**(TJ=|25°C unless otherwise specified)|25°C unless otherwise specified)|||||| |---|---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Condition**||**FET**|**Min**|**Typ**|**Max**|**Unit**| |**CHARGES, CAPACITANCES &**|**GATE RESISTANCE**|||||||| |Total Gate Charge|QG(TOT)|Q1: VGS= 4.5 V, VDS= 13 V; ID= 15 A<br>Q2: VGS= 4.5 V, VDS= 13 V; ID= 29 A||Q1||5.5||nC| |||||Q2||17||| |Gate−to−Drain Charge|QGD|||Q1||1.0||nC| |||||Q2||2.7||| |Gate−to−Source Charge|QGS|||Q1||2.4||nC| |||||Q2||7.3||| |Total Gate Charge|QG(TOT)|Q1: VGS= 10 V, VDS= 13 V; ID= 15 A||Q1||12||nC| |||Q2: VGS= 10 V, VDS= 13 V; ID= 29 A||Q2||37.5||| |**SWITCHING CHARACTERISTICS, VGS = 4.5**||**V**(Note 7)||||||| |Turn−On Delay Time|td(ON)|VGS= 4.5 V<br>Q1: ID= 15 A, VDD= 13 V, RG= 6�<br>Q2: ID= 29 A, VDD= 13 V, RG= 6�||Q1||9.5||ns| |||||Q2||19.1||| |Rise Time|tr|||Q1||2.3||ns| |||||Q2||6.6||| |Turn−Off Delay Time|td(OFF)|||Q1||12.6||ns| |||||Q2||26.3||| |Fall Time|tf|||Q1||2.7||ns| |||||Q2||6.3||| |**SWITCHING CHARACTERISTICS, VGS = 10 V**(Note 7)||||||||| |Turn−On Delay Time|td(ON)|VGS= 10 V<br>Q1: ID= 15 A, VDD= 13 V, RG= 6�<br>Q2: ID= 29 A, VDD= 13 V, RG= 6�||Q1||6.6||ns| |||||Q2||9.4||| |Rise Time|tr|||Q1||1.1||ns| |||||Q2||2.3||| |Turn−Off Delay Time|td(OFF)|||Q1||17.3||ns| |||||Q2||37.6||| |Fall Time|tf|||Q1||1.7||ns| |||||Q2||5.2||| |**DRAIN−SOURCE DIODE CHARACTERISTICS**||||||||| |Forward Diode Voltage|VSD|VGS= 0 V,<br>IS= 15 A|TJ= 25°C|Q1||0.80|1.2|V| ||||TJ= 125°C|||0.70||| |||VGS= 0 V,<br>IS= 29 A|TJ= 25°C|Q2||0.80|1.2|| ||||TJ= 125°C|||0.69||| |Reverse Recovery Time|tRR|VGS= 0 V<br>Q1: IS= 15 A, dIS/dt =<br>Q2: IS= 29 A, dIS/dt =|100 A/�s<br>100 A/�s|Q1||19||ns| |||||Q2||35||| |Reverse Recovery Charge|QRR|||Q1||6.0||nC| |||||Q2||21||| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Pulse Test: pulse width � 300 � s, duty cycle � 2%. 7. Switching characteristics are independent of operating junction temperatures. **www.onsemi.com** **3** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 40 40<br>3.2 V<br>35<br>VGS = 10 V to 3.6 V<br>30 30<br>25<br>2.8 V<br>20 20<br>TJ = 25 ° C<br>15<br>10 2.6 V 10<br>50 0 TJ = 125 ° C TJ = −55 ° C<br>0 1 2 3 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics<br>10 6.0<br>TJ = 25 ° C TJ = 25 ° C<br>9 ID = 15 A 5.5<br>8<br>5.0<br>7<br>4.5 VGS = 4.5 V<br>6<br>4.0<br>5<br>3.5 VGS = 10 V<br>4<br>3.0<br>3<br>2 2.5<br>1 2.0<br>2 3 4 5 6 7 8 9 10 10 15 20 25 30 35 40<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate−to−Source Figure 4. On−Resistance vs. Drain Current and<br>Voltage Gate Voltage<br>1.8 100K<br>VGS = 10 V<br>1.6<br>ID = 15 A 10K<br>1.4 TJ = 150 ° C<br>1K<br>1.2<br>TJ = 125 ° C<br>1.0 100 TJ = 85 ° C<br>0.8 TJ = 25 ° C<br>10<br>0.6<br>0.4 1<br>−50 −25 0 25 50 75 100 125 150 5 7 9 11 13 15 17 19 21 23 25<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 5. On−Resistance Variation with Temperature** **==> picture [187 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 6. Drain−to−Source Leakage Current<br>vs. Voltage<br>**----- End of picture text -----**<br> **www.onsemi.com** **4** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10K<br>1K CISS<br>COSS<br>100<br>CRSS<br>10<br>VGS = 0 V<br>TJ = 25 ° C<br>f = 1 MHz<br>1<br>0 5 10 15 20 25<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Variation** **==> picture [243 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS = 4.5 V<br>VDS = 15 V<br>ID = 18 A<br>td(off)<br>10<br>td(on)<br>tf<br>tr<br>1<br>1 10 100<br>t, TIME (ns)<br>**----- End of picture text -----**<br> **==> picture [104 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> RG, GATE RESISTANCE ( � )<br>**----- End of picture text -----**<br> **Figure 9. Resistive Switching Time Variation vs. Gate Resistance** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 13 V<br>ID = 15 A<br>8 T J = 25 ° C<br>7<br>6<br>5<br>4 Q GS QGD<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>VGS = 0 V<br>10<br>1<br>0.1 TJ = 125 ° C TJ = 25 ° C TJ = −55 ° C<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>IS<br>**----- End of picture text -----**<br> **Figure 10. Diode Forward Voltage vs. Current** **==> picture [491 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TA = 25 ° C<br>1000 Single Pulse<br>R � JA = 158 ° C/W<br>100 10 � s<br>25 ° C<br>10<br>10<br>100 � s<br>1 ms 100 ° C<br>1 10 ms<br>100 ms<br>0.1 Thermal Limit R DS(on) Limit 1 s 10 s 125 ° C<br>Package Limit DC<br>0.01 1<br>0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1<br>VDS, DRAIN−SOURCE VOLTAGE(V) TAV, TIME IN AVALANCHE (s)<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)<br>ID<br>IPEAK<br>**----- End of picture text -----**<br> **Figure 11. Safe Operating Area** **Figure 12. IPEAK vs. Time in Avalanche** **www.onsemi.com** **5** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q1** **==> picture [491 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1 1%<br>0.1<br>0.01<br>Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>PULSE TIME (sec)<br>C/W)<br>°<br>(t) (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br> **Figure 13. Thermal Characteristics** **www.onsemi.com** **6** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [491 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 120 120<br>VGS = 10 V to 3.2 V<br>100 2.8 V 100<br>80 80<br>60 60<br>TJ = 25 ° C<br>40 40<br>2.6 V<br>20 20<br>0 0 TJ = 125 ° C TJ = −55 ° C<br>0 1 2 3 0 1 2 3 4 5<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)<br>Figure 14. On−Region Characteristics Figure 15. Transfer Characteristics<br>10 2.0<br>9 TJ = 25 ° C TJ = 25 ° C<br>ID = 29 A<br>8<br>1.5<br>7 VGS = 4.5 V<br>6<br>VGS = 10 V<br>5 1.0<br>4<br>3<br>0.5<br>2<br>1<br>0 0<br>2 3 4 5 6 7 8 9 10 10 20 30 40 50 60 70 80 90 100 110 120<br>VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)<br>Figure 16. On−Resistance vs. Gate−to−Source Figure 17. On−Resistance vs. Drain Current<br>Voltage and Gate Voltage<br>1.8 100K<br>1.6 VIDGS = 29 A = 10 V 10K TJ = 150 ° C<br>1.4 T J = 125 ° C<br>1K<br>1.2 100 T J = 85 ° C<br>1.0 TJ = 25 ° C<br>10<br>0.8<br>0.6 1<br>0.4 0.1<br>−50 −25 0 25 50 75 100 125 150 5 7 9 11 13 15 17 19 21 23 25<br>TJ, JUNCTION TEMPERATURE ( ° C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A) , DRAIN CURRENT (A)<br>ID ID<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE (m , DRAIN−TO−SOURCE RESISTANCE (m<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, NORMALIZED DRAIN−TO− SOURCE RESISTANCE IDSS<br>DS(on)<br>R<br>**----- End of picture text -----**<br> **Figure 18. On−Resistance Variation with Temperature** **Figure 19. Drain−to−Source Leakage Current vs. Voltage** **www.onsemi.com** **7** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [241 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10K<br>CISS<br>1K COSS<br>100<br>CRSS<br>10<br>VGS = 0 V<br>TJ = 25 ° C<br>f = 1 MHz<br>1<br>0 5 10 15 20 25<br>VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 20. Capacitance Variation** **==> picture [239 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>9 VDS = 13 V<br>ID = 29 A<br>8 T J = 25 ° C<br>7<br>6<br>5<br>4 QGS QGD<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40<br>QG, TOTAL GATE CHARGE (nC)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>V<br>**----- End of picture text -----**<br> **Figure 21. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge** **==> picture [490 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>VGS = 4.5 V 100 V GS = 0 V<br>VDS = 13 V<br>I D = 29 A<br>100<br>10<br>td(off)<br>10 t d(on) tr tf 1<br>TJ = 125 ° C<br>TJ = 25 ° C TJ = −55 ° C<br>1 0.1<br>1 10 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>RG, GATE RESISTANCE ( � ) VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>Figure 22. Resistive Switching Time Variation Figure 23. Diode Forward Voltage vs. Current<br>vs. Gate Resistance<br>100<br>TA = 25 ° C<br>1000<br>Single Pulse 10 � s<br>R � JA = 132 ° C/W<br>100<br>100 � s 25 ° C<br>10<br>10<br>1 ms 100 ° C<br>1 10 ms<br>100 ms 125 ° C<br>0.1 R DS(on) Limit 1 s<br>Thermal Limit 10 s<br>Package Limit DC<br>0.01 1<br>0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10<br>VDS, DRAIN−SOURCE VOLTAGE(V) TAV, TIME IN AVALANCHE (s)<br>t, TIME (ns)<br>, SOURCE CURRENT (A)<br>IS<br>, DRAIN CURRENT (A)<br>, DRAIN CURRENT (A)<br>ID<br>IPEAK<br>**----- End of picture text -----**<br> **Figure 24. Safe Operating Area** **Figure 25. IPEAK vs. Time in Avalanche** **www.onsemi.com** **8** **NTTFD1D8N02P1E** ## **TYPICAL CHARACTERISTICS − Q2** **==> picture [491 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100 50% Duty Cycle<br>20%<br>10%<br>10<br>5%<br>2%<br>1 1%<br>0.1<br>0.01<br>0.001<br>Single Pulse<br>0.0001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>C/W)<br>°<br>(t) (<br>JA<br>�<br>R<br>**----- End of picture text -----**<br> PULSE TIME (sec) **Figure 26. Thermal Characteristics** **www.onsemi.com** **9** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [93 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> PQFN8 3.3X3.3, 0.65P<br>CASE 483AZ<br>ISSUE B<br>**----- End of picture text -----**<br> **==> picture [79 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 14 FEB 2022<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER:** **98AON13675G** **DESCRIPTION: PQFN8 3.3X3.3, 0.65P** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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