NTSV20U100CTG

## NTSV20U100CT 

## 20A, 100V Very Low Forward Voltage Trenchbased Schottky Rectifier 

## **Exceptionally Low VF = 0.485 V at IF = 5 A** 

## **Features** 

- Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage 

- Fast Switching with Exceptional Temperature Stability 

- Low Power Loss and Lower Operating Temperature 

- Higher Efficiency for Achieving Regulatory Compliance 

- Low Thermal Resistance 

- High Surge Capability 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Typical Applications** 

- Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display 

## @ **www.onsemi.com PIN CONNECTIONS** 

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1<br>2, 4<br>3 yt<br>4<br>TO−220AB<br>CASE 221A<br>1 i 2 STYLE 6<br>3<br>**----- End of picture text -----**<br>


- High Frequency and DC−DC Converters 

- Freewheeling and OR−ing diodes 

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- Reverse Battery Protection 

- Instrumentation 

## **Mechanical Characteristics** 

- Case: Epoxy, Molded 

- Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in 

- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable 

- Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 

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AY WW<br>TSV20U10CG<br>AKA<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>AKA = Polarity Designator<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **NTSV20U100CT/D** 

**1** 

© Semiconductor Components Industries, LLC, 2014 **November, 2014 − Rev. 2** 

**NTSV20U100CT** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage<br>Working Peak Reverse Voltage<br>DC Blocking Voltage|VRRM<br>VRWM<br>VR|100|V|
|Average Rectified Forward Current<br>(Rated VR, TC= 115°C)<br>Per device<br>Per diode|IF(AV)|20<br>10|A|
|Peak Repetitive Forward Current<br>(Rated VR, Square Wave, 20 kHz, TC= 110°C)<br>Per device<br>Per diode|IFRM|40<br>20|A|
|Nonrepetitive Peak Surge Current<br>(Surge applied at rated load conditions halfwave, single phase, 60 Hz)|IFSM|100|A|
|Operating Junction Temperature|TJ|−40 to +150|°C|
|Storage Temperature|Tstg|−40 to +150|°C|
|Voltage Rate of Change (Rated VR)|dv/dt|10,000|V/�s|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Value**|**Unit**|
|Maximum Thermal Resistance<br>Junction−to−Case<br>Junction−to−Ambient|R�JC<br>R�JA|2.0<br>70|°C/W<br>°C/W|



## **ELECTRICAL CHARACTERISTICS** (Per Leg unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(Per Leg unless otherwise noted)|||||
|---|---|---|---|---|
|**Rating**|**Symbol**|Typ|**Max**|**Unit**|
|Maximum Instantaneous Forward Voltage (Note 1)<br>(IF= 5 A, TJ= 25°C)<br>(IF= 10 A, TJ= 25°C)<br>(IF= 5 A, TJ= 125°C)<br>(IF= 10 A, TJ= 125°C)|vF|0.520<br>0.658<br>0.485<br>0.593|−<br>0.98<br>−<br>0.82|V|
|Maximum Instantaneous Reverse Current (Note 1)<br>(VR= 70 V, TJ= 25°C)<br>(VR= 70 V, TJ= 125°C)<br>(Rated dc Voltage, TJ= 25°C)<br>(Rated dc Voltage, TJ= 125°C)|IR|9.6<br>7.0<br>63.2<br>18.0|800<br>25|�A<br>mA<br>�A<br>mA|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 � s, Duty Cycle � 2.0% 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**|||
|---|---|---|
|**Device**|**Package**|**Shipping**|
|NTSV20U100CTG|TO−220AB<br>(Pb−Free)|50 Units / Rail|



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**2** 

**NTSV20U100CT** 

## **TYPICAL CHARACTERISTICS** 

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100 100<br>TA = 150 ° C<br>TA = 150 ° C 10<br>TA = 25 ° C<br>10 TA = 125 ° C<br>1<br>TA = 125 ° C<br>0.1<br>1<br>0.01 TA = 25 ° C<br>0.1 0.001<br>0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 20 30 40 50 60 70 80 90 100<br>VF, INSTANTANEOUS FORWARD VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)<br>Figure 1. Typical Instantaneous Forward Figure 2. Typical Reverse Characteristics<br>Characteristics<br>10,000 20<br>TJ = 25 ° C R � JC = 1.3 ° C/W<br>dc<br>15<br>1000<br>10 Square Wave<br>100<br>5<br>10 0<br>0.1 1 10 100 0 20 40 60 80 100 120 140<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( ° C)<br>CURRENT (A)<br>CURRENT (mA)<br>, INSTANTANEOUS FORWARDiF , INSTANTANEOUS REVERSEIR<br>CURRENT (A)<br>, AVERAGE FORWARD<br>IF(AV)<br>C, JUNCTION CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 3. Typical Junction Capacitance** 

**Figure 4. Current Derating per Leg** 

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40 20<br>35 R � JC = 1.3 ° C/W 18 IPK20/IAV = IPK/IAV = 10 IPK/IAV = 5<br>dc<br>16<br>30<br>14<br>25<br>Square Wave 12 Square Wave<br>20 10<br>8<br>15 dc<br>6<br>10<br>4<br>5 2 TJ = 150 ° C<br>0 0<br>0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14<br>TC, CASE TEMPERATURE ( ° C) IF(AV), AVERAGE FORWARD CURRENT (A)<br>Figure 5. Current Derating Figure 6. Forward Power Dissipation<br>ER DISSIPATION (W)<br>, AVERAGE FORWARD POW-<br>, AVERAGE FORWARD CURRENT (A) F(AV)<br>IF(AV) P<br>**----- End of picture text -----**<br>


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**3** 

**NTSV20U100CT** 

## **TYPICAL CHARACTERISTICS** 

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10<br>1 50%<br>20%<br>10%<br>0.1 5% P(pk)<br>t1<br>2%<br>t2<br>1% Single Pulse DUTY CYCLE, D = t1/t2<br>0.01<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000<br>t, PULSE TIME (sec)<br>C/W)<br>°<br>MAL RESISTANCE (<br>R(t), TYPICAL TRANSIENT THER-<br>**----- End of picture text -----**<br>


**Figure 7. Typical Transient Thermal Response** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220** CASE 221A ISSUE AK 

DATE 13 JAN 2022 

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SCALE 1:1<br>**----- End of picture text -----**<br>


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STYLE 1: STYLE 2: STYLE 3: STYLE 4:<br>PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2<br>3. EMITTER 3. COLLECTOR 3. GATE 3. GATE<br>4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2<br>STYLE 5: STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br>2. DRAIN 2. CATHODE 2. ANODE 2. ANODE<br>3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY<br>4. DRAIN 4. CATHODE 4. ANODE 4. ANODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12:<br>PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1<br>2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2<br>3. EMITTER 3. DRAIN 3. GATE 3. GATE<br>4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED<br>**----- End of picture text -----**<br>


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Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42148B Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: TO−220 PAGE 1 OF 1<br>**----- End of picture text -----**<br>


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