NTS4173PT1G

## NTS4173P 

## MOSFET – Power, Single, P-Channel, SC-70 -30 V, -1.3 A 

## **Features** 

- −30 V BVds, Low RDS(on) in SC−70 Package 

- Low Threshold Voltage 

- Fast Switching Speed 

- This is a Halide−Free Device 

- This is a Pb−Free Device 

## **Applications** 

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|||||||||
|---|---|---|---|---|---|---|---|
|ee|V(BR)DSS|RDS(on)|ee|MAX|ID|eee|MAX|
|150 m|@ −10 V|−1.2 A|
|−30 V|200 m|@ −4.5 V|−1.0 A|
|280 m|@ −2.5 V|−0.9 A|

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- Load Switch 

- Low Current Inverter and DC−DC Converters 

## **SC−70/SOT−323 (3 LEADS)** 

- Power Switch for Printers, Communication Equipment 

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S<br>G<br>D<br>**----- End of picture text -----**<br>


**MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) 

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||||||||||
|---|---|---|---|---|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|G|
|Drain−to−Source Voltage|VDSS|−30|V|
|Gate−to−Source Voltage|VGS|±|12|V|
|D|
|Continuous Drain|Steady|TA = 25|°|C|−1.2|
|Current (Note 1)|State|TA = 85|°|C|ID|−0.80|A|MARKING DIAGRAM/|
|3|
|t|≤|5 s|TA = 25|°|C|−1.3|PIN ASSIGNMENT|
|=|Power Dissipation|Steady|—e-|0.29|te|1|3 Drain|
|(Note 1)|State|TA = 25|°|C|PD|W|2|TGM|
|t|≤|5 s|0.35|SC−70/SOT−323|
|CASE 419|
|Pulsed Drain Current|tp = 10 s|IDM|−5.0|A|STYLE 8|1|2|
|po|Gate|_|Source|
|Operating Junction and Storage Temperature|TJ,|−55 to|°|C|
|T|150|
|stg|TG|= Specific Device Code|
|Source Current (Body Diode)|IS|−1.0|A|M|= Date Code*|
|pt|
|Lead Temperature for Soldering Purposes(1/8|″|from case for 10 s)|TL|260|°|C|(Note: Microdot may be in either location)= Pb−Free Package|
|Po|||
|Stresses exceeding Maximum Ratings may damage the device. Maximum|
|Ratings are stress ratings only. Functional operation above the Recommended|ORDERING INFORMATION|
|Operating Conditions is not implied. Extended exposure to stresses above the|
|Recommended Operating Conditions may affect device reliability.|Device|Package|Shipping|[†]|
|THERMAL RESISTANCE RATINGS|
|NTS4173PT1G|SC−70|3000/Tape & Reel|
|Parameter|Symbol|Max|Unit|(Pb−Free)|
|———|
|Junction−to−Ambient − Steady State (Note 1)|R|JA|425|°|C/W|†For information on tape and reel specifications,|
|Junction−to−Ambient − t|≤|5 s (Note 1)|R|JA|360|including part orientation and tape sizes, pleaserefer to our Tape and Reel Packaging Specification|
|1.|Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq|Brochure, BRD8011/D.|

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1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 

- Date code orientation may vary depending upon manufacturing location 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2008 **June, 2019 − Rev. 0** 

**NTS4173P/D** 

**NTS4173P** 

## **MOSFET ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**MOSFET ELECTRICAL CHARAC**|**TERISTICS **|(TJ= 25°C unless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Units**|
|**OFF CHARACTERISTICS**|||||||
|Drain−to−Source Breakdown Voltage|V(BR)DSS|VGS= 0 V, ID= −250�A|−30|||V|
|Zero Gate Voltage Drain Current|IDSS|VGS= 0 V, VDS= −24 V, TJ= 25°C<br>VGS= 0 V, VDS= −24 V, TJ= 85°C|||−1.0<br>−5.0|�A|
|Gate−to−Source Leakage Current|IGSS|VDS= 0 V, VGS=�12 V|||±0.1|�A|
|**ON CHARACTERISTICS**(Note 3)|||||||
|Gate Threshold Voltage|VGS(TH)|VGS= VDS, ID= −250�A|−0.7|−1.15|−1.5|V|
|Drain−to−Source On−Resistance|RDS(on)|VGS= −10 V, ID= −1.2 A||90|150|m�|
|||VGS= −4.5 V, ID= −1.0 A||110|200||
|||VGS= −2.5 V, ID= −0.9 A||165|280||
|Forward Transconductance|gFS|VDS= −5 V, ID= −1.2 A||3.6||S|
|**CHARGES, CAPACITANCES AND GATE RESISTANCE**|||||||
|Input Capacitance|Ciss|VGS= 0 V, f = 1.0 MHz,<br>VDS= −15 V||430||pF|
|Output Capacitance|Coss|||55|||
|Reverse Transfer Capacitance|Crss|||40|||
|Total Gate Charge|QG(TOT)|VGS= −4.5 V, VDS= −15 V,<br>ID= −1.2 A||4.8||nC|
|Threshold Gate Charge|QG(TH)|||0.6|||
|Gate−to−Source Charge|QGS|||1.1|||
|Gate−to−Drain Charge|QGD|||1.5|||
|Total Gate Charge|QG(TOT)|VGS= −10 V, VDS= −15 V,<br>ID= −1.2 A||10.1||nC|
|Threshold Gate Charge|QG(TH)|||0.6|||
|Gate−to−Source Charge|QGS|||1.1|||
|Gate−to−Drain Charge|QGD|||1.5|||
|**SWITCHING CHARACTERISTICS**(Note 4)|||||||
|Turn−On Delay Time|td(on)|VGS= −4.5 V, VDS= −15 V,<br>ID= −1.2 A, RG= 3�||7.7||ns|
|Rise Time|tr|||5.2|||
|Turn−Off Delay Time|td(off)|||16.2|||
|Fall Time|tf|||6.7|||
|Turn−On Delay Time|td(on)|VGS= −10 V, VDS= −15 V,<br>ID= −1.2 A, RG= 3�||5.3||ns|
|Rise Time|tr|||6.7|||
|Turn−Off Delay Time|td(off)|||19.9|||
|Fall Time|tf|||7.1|||
|**DRAIN−SOURCE DIODE CHARACTERISTICS**|||||||
|Forward Diode Voltage|VSD|VGS= 0 V, IS= −1.0 A||−0.8|−1.0|V|
|Reverse Recovery Time|tRR|VDS= 20 V, VGS= 0 V, IS= −1.0 A,<br>dISD/dt= 100 A/�s||12||ns|
|Charge Time|ta|||10|||
|Discharge Time|tb|||2.0|||
|Reverse Recovery Charge|QRR|||7.0||nC|



2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 

3. Pulse Test: Pulse Width � 300 � s, Duty Cycle � 2% 

4. Switching characteristics are independent of operating junction temperatures 

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**2** 

**NTS4173P** 

## **TYPICAL CHARACTERISTICS** 

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5.0<br>−10 V<br>4.5 −2.6 V<br>−4.5 V °<br>4.0 TJ = 25 C<br>−3.0 V<br>3.5<br>−2.4 V<br>3.0<br>2.5<br>−2.2 V<br>2.0<br>1.5<br>−2.0 V<br>1.0<br>0.5<br>−1.8 V<br>0<br>0 0.5 1.0 1.5 2.0 2.5 3.0<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br>


**Figure 1. On−Region Characteristics** 

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5.0<br>VDS ≥  −10 V<br>4.0<br>3.0<br>2.0<br>TJ = 125 ° C<br>1.0<br>TJ = 25 ° C<br>TJ = −55 ° C<br>0<br>1.0 1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0<br>−VGS, GATE−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br>


**Figure 2. Transfer Characteristics** 

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0.30 0.30<br>TJ = 25 ° C TJ = 25 ° C<br>ID = −1.2 A<br>0.25 0.25<br>VGS = −2.2 V<br>0.20 0.20<br>VGS = −2.5 V<br>0.15 0.15<br>VGS = −4.5 V<br>0.10 0.10<br>VGS = −10 V<br>0.05 0.05<br>2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>−VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A)<br>Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and<br>Gate Voltage<br>1.6 1000<br>1.5 VIDGS = −1.2 A = −10 V TJ = 150 ° C<br>1.4<br>1.3<br>100<br>1.2 TJ = 125 ° C<br>1.1<br>1.0<br>10<br>0.9<br>0.8 TJ = 85 ° C<br>0.7<br>0.6 1<br>−50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 30<br>TJ, JUNCTION TEMPERATURE ( ° C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>) � ) �<br>, DRAIN−TO−SOURCE RESISTANCE ( , DRAIN−TO−SOURCE RESISTANCE (<br>DS(on) DS(on)<br>R R<br>, LEAKAGE (nA)<br>, DRAIN−TO−SOURCE<br>DSS<br>−I<br>DS(on)<br>R RESISTANCE (NORMALIZED)<br>**----- End of picture text -----**<br>


**Figure 5. On−Resistance Variation with Temperature** 

**Figure 6. Drain−to−Source Leakage Current vs. Voltage** 

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**3** 

**NTS4173P** 

## **TYPICAL CHARACTERISTICS** 

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600<br>VGS = 0 V<br>500 TJ = 25 ° C<br>f = 1 MHz<br>Ciss<br>400<br>300<br>200<br>100 C oss<br>0 Crss<br>0 5 10 15 20 25 30<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


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12 16<br>QT<br>14<br>10<br>VDS VGS 12<br>8<br>10<br>6 8<br>6<br>4<br>Qgs Qgd VDS = −15 V 4<br>2 T I DJ  = −1.2 A  = 25 ° C 2<br>0 0<br>0 2 4 6 8 10<br>QG, TOTAL GATE CHARGE (nC)<br>Figure 8. Gate−to−Source Voltage vs. Total<br>Charge<br>10<br>TJ = 150 ° C 25 ° C<br>1.0<br>125 ° C TJ = −55 ° C<br>0.1<br>0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2<br>−VSD, SOURCE−TO−DRAIN VOLTAGE (V)<br>−V<br>DS<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS<br>−V<br>, DRAIN−TO−SOURCE VOLTAGE (V)<br>, SOURCE CURRENT (A)<br>S<br>−I<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Variation** 

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100<br>VGS = −4.5 V td(off)<br>VDD = −15 V<br>ID = −1.2 A tf<br>tr<br>10 td(on)<br>1.0<br>1.0 10 100<br>RG, GATE RESISTANCE ( � )<br>t, TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 9. Resistive Switching Time Variation vs. Gate Resistance** 

**Figure 10. Diode Forward Voltage vs. Current** 

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1.4 20<br>ID = −250  � A 18<br>1.3<br>16<br>1.2 14<br>12<br>1.1<br>10<br>1.0<br>8<br>0.9 6<br>4<br>0.8<br>2<br>0.7 0<br>−50 −25 0 25 50 75 100 125 150 0.0001 0.001 0.01 0.1 1 10 100 1000<br>TJ, JUNCTION TEMPERATURE ( ° C) SINGLE PULSE TIME (s)<br>POWER (W)<br>, GATE−TO−SOURCE VOLTAGE (V)<br>GS(th)<br>−V<br>**----- End of picture text -----**<br>


**Figure 11. Threshold Voltage** 

**Figure 12. Single Pulse Maximum Power Dissipation** 

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**4** 

**NTS4173P** 

## **TYPICAL PERFORMANCE CURVES** 

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10<br>10 �s<br>1.0<br>100 �s<br>1 ms<br>VGS = −12 V 10 ms<br>0.1 SINGLE PULSE<br>TC = 25 ° C<br>RDS(on) LIMIT<br>THERMAL LIMIT<br>PACKAGE LIMIT dc<br>0.01<br>0.1 1.0 10 100<br>−VDS, DRAIN−TO−SOURCE VOLTAGE (V)<br>, DRAIN CURRENT (A)<br>D<br>−I<br>**----- End of picture text -----**<br>


**Figure 13. Maximum Rated Forward Biased Safe Operating Area** 

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1.0<br>0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01<br>Single Pulse<br>0.01<br>0.0001 0.001 0.01 0.1 1.0 10 100 1000<br>t, TIME (SECONDS)<br>RESPONSE (NORMALIZED)<br>R(t), EFFECTIVE TRANSIENT THERMAL<br>**----- End of picture text -----**<br>


**Figure 14. FET Thermal Response** 

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**5** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**SC−70 (SOT−323)** CASE 419 ISSUE P 

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DATE 07 OCT 2021<br>**----- End of picture text -----**<br>


**SCALE 4:1** 

## **GENERIC MARKING DIAGRAM** 

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XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE  2. EMITTER  2. SOURCE<br> 3. COLLECTOR  3. COLLECTOR  3. DRAIN<br>**----- End of picture text -----**<br>


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STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE  2. ANODE<br>3. ANODE  3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE  2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE  3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br>


## **DOCUMENT NUMBER: 98ASB42819B** 

**DESCRIPTION: SC−70 (SOT−323)** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

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